Mitsubishi Electric Corporation Semiconductor Group CM400DU-24F Datasheet

CM400HU-24F
MITSUBISHI IGBT MODULES
CM400HU-24F
HIGH POWER SWITCHING USE
¡IC...................................................................400A
CES ......................................................... 1200V
¡V ¡Insulated Type ¡1-elements in a pack
APPLICATION
General purpose inverters & Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
107
±0.25
93
21.15
18
20.5
CM
2–M8NUTS
62
±0.25
48
9.5
10
17.2
6.5
2–M4NUTS
13.5 29
E
26
19.1
G
6.5
EC
Tc measured point
8.5
4–φ6.5 MOUNTING HOLES
12.55
24.35
8.5
Dimensions in mm
4
E
E
–0.5
+1
+1
–0.5
26
LABEL
34
CIRCUIT DIAGRAM
RTC
C
Aug. 1999
MAXIMUM RATINGS (Tj = 25°C)
MITSUBISHI IGBT MODULES
CM400HU-24F
HIGH POWER SWITCHING USE
Symbol Parameter
CES
V VGES IC ICM IE ( IEM ( PC ( Tj Tstg Viso
Collector-emitter voltage Gate-emitter voltage
Collector current
Note 1
)
Emitter current
Note 1
)
Maximum collector dissipation
Note 3
)
Junction temperature Storage temperature Isolation voltage
G-E Short C-E Short
C = 25°C
T Pulse (Note 2)
C = 25°C
T Pulse (Note 2)
C = 25°C
T
Main terminal to base plate, AC 1 min.
Conditions UnitRatings
Main Terminal M8
Torque strength
Mounting holes M6 G(E) Terminal M4
Weight
ELECTRICAL CHARACTERISTICS
Symbol Parameter
ICES V
GE(th)
IGES VCE(sat)
Cies Coes Cres QG td(on) tr td(off) tf trr ( Qrr ( VEC( Rth(j-c)Q
th(j-c)R
R
th(c-f)
R Rth(j-c’)Q
G
R
Note 1. IE, VEC, trr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi).
1 : Tc measured point is indicated in OUTLINE DRAWING.
*
2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
*
3 : If you use this value, Rth(f-a) should be measured just under the chips.
*
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Collector-emitter saturation voltage
Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time
Note 1
)
Reverse recovery charge
Note 1
)
Emitter-collector voltage
Note 1
)
Thermal resistance
*1
Contact thermal resistance Thermal resistance External gate resistance
2. Pulse width and repetition rate should be such that the device junction temp. (T
3. Junction temperature (T
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
j) should not increase beyond 150°C.
Typical value
(Tj = 25°C)
Test conditions
CE = VCES, VGE = 0V
V
C = 40mA, VCE = 10V
I V
GE = VCES, VCE = 0V j = 25°C
T
j = 125°C
T
CE = 10V
V
GE = 0V
V
CC = 600V, IC = 400A, VGE = 15V
V
V
CC = 600V, IC = 400A GE1 = VGE2 = 15V
V
G = 0.78Ω, Inductive load switching operation
R
E = 400A
I
E = 400A, VGE = 0V
I
I
C = 400A, VGE = 15V
IGBT part FWDi part Case to fin, Thermal compoundapplied Tc measured point is just under the chips
Min. Max.
*2
0.78
j) does not exceed Tjmax rating.
57
— — — — — — — — — — — — — — — — — —
1200
±20 400 800 400 800
1600 –40 ~ +150 –40 ~ +125
2500
8.8 ~ 10.8
3.5 ~ 4.5
1.3 ~ 1.7 450
Limits
T yp.
2
V V
A
A
W
°C °C
V N • m N • m N • m
g
Unit
mA
6V
1.8
1.9 — — —
4400
— — — — —
23.6 — — —
0.02 — —
80
2.4 —
160
6.8
4.0 —
300 100 600 300 350
3.2
0.078
0.09 —
0.045
7.8
µA
V
nF
nC
ns
ns
µC
V
°C/W
3
Aug. 1999
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