Mitsubishi Electric Corporation Semiconductor Group CM350DU-5F Datasheet

MITSUBISHI IGBT MODULES

CM350DU-5F

HIGH POWER SWITCHING USE

INSULA TED TYPE

A

Point

B

E

K(4 - Mounting
Holes)

T

Measured

C

C

D

F

3 - M6 NUTS

L

CM

E2

H

J

H

Description:

Mitsubishi IGBT Modules are de-

R

R

G

signed for use in switching appli­cations. Each module consists of

TAB #110, t = 0.5

MPPM

M

N

two IGBTs in a half-bridge configu­ration with each transistor having
a reverse-connected super-fast re­covery free-wheel diode. All com-

Q

ponents and interconnects are iso­lated from the heat sinking base­plate, offering simplified system
assembly and thermal manage­ment.

G2
E2

C1C2E1

E1
G1

Features:

u Low Drive Power
u Low V

CE(sat)

u Discrete Super-Fast Recovery

Free-Wheel Diode

u High Frequency Operation
u Isolated Baseplate for Easy

Heat Sinking

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.33 110.0
B 3.66±0.01 93.0±0.25
C 3.15 80.0
D 2.44±0.01 62.0±0.25
E 0.55 14.0
F 0.86 21.75
G 0.94 24.0
H 0.24 6.0

Dimensions Inches Millimeters

J 0.59 15.0
K 0.26 Dia. 6.5 Dia.
L 1.14 +0.04/-0.02 29 +1.0/-0.5

M 0.71 18.0
N 0.33 8.5

P 0.28 7.0

Q 0.83 21.0
R 0.98 25.0

Applications:

u UPS
u Forklift

Ordering Information:

Example: Select the complete
module number you desire from
the table - i.e. CM350DU-5F is a
250V (V

), 350 Ampere Trench

CES

Gate Design Dual IGBT Module.

Type Amperes Volts (x 50)

Current Rating V

CM 350 5

CES

Sep.1998

MITSUBISHI IGBT MODULES

CM350DU-5F

HIGH POWER SWITCHING USE

INSULA TED TYPE

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM350DU-5F Units
Junction T emperature T
Storage T emperature T
Collector-Emitter Voltage (G-E SHOR T) V
Gate-Emitter Voltage (C-E SHOR T) V
Collector Current (Tc = 25°C) I
Peak Collector Current I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) P

j

stg
CES
GES

C

CM

E

EM

c

Mounting Torque, M6 Main Terminal – 1.96 ~ 2.94 N · m
Mounting Torque, M6 Mounting – 1.96 ~ 2.94 N · m
Weight – 520 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

iso

-40 to 150 °C

-40 to 125 °C
250 Volts
±20 Volts
350 Amperes
700 Amperes
350 Amperes

700* Amperes

960 Watts

2500 Vrms

rating.

j(max)

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V

CES
GES

GE(th)

CE(sat)

VCE = V

VGE = V

, VGE = 0V – – 1 mA

CES

, VCE = 0V – – 0.5 µA

CES

IC = 35mA, VCE = 10V 3.0 4.0 5.0 Volts

IC = 350A, VGE = 10V , Tj = 25°C – 1.2 1.7 Volts

IC = 350A, VGE = 10V , Tj = 125°C – 1.10 – Volts
Total Gate Charge Q
Emitter-Collector Voltage* V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T

G

EC

VCC = 100V , IC = 350A, VGE = 10V – 1320 – nC

IE = 350A, VGE = 0V – – 2.0 Volts

rating.

j(max)

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t

d(on)

Load Rise Time t
Switching Turn-off Delay Time t

d(off)

Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q

ies
oes
res

r

f

rr

rr

VCE = 10V, VGE = 0V – – 4.5 nF

VCC = 100V, IC = 350A, – – 1100 ns

V

= V

GE1

= 10V, – – 2400 ns

GE2

RG = 7.1Ω, Resistive – – 900 ns

Load Switching Operation – – 500 ns
IE = 350A, diE/dt = -700A/µs – – 300 ns
IE = 350A, diE/dt = -700A/µs – 5.7 – µC

––99nF

– – 3.4 nF

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R

th(j-c)
th(j-c)
th(c-f)

Per Module, Thermal Grease Applied – 0.010 – °C/W

Per IGBT – – 0.17 °C/W

Per Free-Wheel Diode – – 0.28 °C/W

Sep.1998