Mitsubishi Electric Corporation Semiconductor Group BCR8UM Datasheet
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR8UM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
BCR8UM
¡IT (RMS)........................................................................8A
DRM..............................................................400V/600V
¡V
¡I
FGT !, IRGT !, IRGT # ........................................... 15mA
iso........................................................................1500V
¡V
OUTLINE DRAWING
10.2
2.8 ± 0.2
✽
MAX
4.2
2.54
➀➁➂
T1 TERMINAL
➀
T
2 TERMINAL
➁
➂
GATE TERMINAL
➂
TO-220
TYPE
NAME
VOLTAGE
CLASS
15.5
MIN
13.0
➁
➀
Dimensions
4.5
φ3.8 ± 0.2
1.4
0.8
2.54
0.6
4.5
✽
Measurement point of
case temperature
in mm
1.27
2.6 ± 0.4
APPLICATION
Light dimmer
MAXIMUM RATINGS
Symbol
DRM
V
VDSM
Symbol
I
T (RMS)
ITSM
2
t
I
PGM
PG (AV)
VGM
IGM
Tj
Tstg
V
iso
✽1. Gate open.
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
RMS on-state current
Surge on-state current
2
I
t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
—
Isolation voltage
Parameter
Parameter
Voltage class
✽1
✽1
Commercial frequency, sine full wave 360° conduction, T
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
T
a=25°C, AC 1 minute, T1 · T2 · G terminal to case
8
400
500
Conditions
c=94°C
12
600
720
✽3
Ratings
8
80
26
5
0.5
10
2
–40 ~ +125
–40 ~ +125
2.3
1500
Unit
V
V
Unit
A
A
A
W
W
V
A
°C
°C
g
V
2
s
Feb.1999
ELECTRICAL CHARACTERISTICS
Symbol
DRM
I
VTM
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-c)
✽2.Measurement using the gate trigger characteristics measurement circuit.
✽3.Case temperature is measured at the T
✽4.The contact thermal resistance R
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Thermal resistance
Parameter
✽2
✽2
th (c-f) in case of greasing is 1.0°C/W.
!
@
#
!
@
#
2 terminal 1.5mm away from the molded case.
j=125°C, VDRM applied
T
T
c=25°C, ITM=12A, Instantaneous measurement
T
j=25°C, VD=6V, RL=6Ω, RG=330Ω
j=25°C, VD=6V, RL=6Ω, RG=330Ω
T
j=125°C, VD=1/2VDRM
T
Junction to case
✽3 ✽4
Test conditions
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR8UM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
Min.
—
—
—
—
—
—
—
—
0.2
—
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.5
1.5
1.5
1.5
3.0
Unit
mA
V
V
V
V
15
mA
15
mA
15
mA
—
V
°C/W
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
2
10
7
5
3
2
1
10
7
5
3
2
0
10
7
5
ON-STATE CURRENT (A)
3
2
–1
10
ON-STATE VOLTAGE (V)
Tj = 25°C
Tj = 125°C
RATED SURGE ON-STATE CURRENT
100
90
80
70
60
50
40
30
20
10
SURGE ON-STATE CURRENT (A)
0
3.80.6
3.43.02.62.21.81.41.0
10023 5710
44
1
23 5710
2
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
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