Mitsubishi Electric Corporation Semiconductor Group BCR3PM Datasheet
BCR3PM
OUTLINE DRAWING
Dimensions
in mm
TO-220F
TYPE
NAME
VOLTAGE
CLASS
φ3.2±0.2
1.3 MAX
0.8
2.54
13.5 MIN
3.6
5.0
1.2
8.5
10.5 MAX
5.2
4.5
231
2
1
3
1
2
3
T
1
TERMINAL
T
2
TERMINAL
GATE TERMINAL
17
2.54
2.8
0.5 2.6
∗ Measurement point of
case temperature
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3PM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
•IT (RMS) ........................................................................3A
DRM ..............................................................400V/600V
•V
FGT !, IRGT !, IRGT # .........................30mA (10mA)
•I
•Viso........................................................................ 1500V
• UL Recognized: File No. E80276
APPLICATION
Contactless AC switches, light dimmer, electric blankets,
control of household equipment such as electric fan,
solenoid drivers, small motor control,
other general purpose control applications
MAXIMUM RATINGS
Symbol
DRM
V
VDSM
Symbol
I
T (RMS)
ITSM
2
t
I
PGM
PG (AV)
VGM
IGM
Tj
Tstg
V
iso
✽1. Gate open.
—
Parameter
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
RMS on-state current
Surge on-state current
I
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Isolation voltage
Parameter
2
t
for fusing
✽5
Voltage class
✽1
✽1
Commercial frequency, sine full wave 360° conduction, Tc=107°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
T
a=25°C, AC 1 minute, T1 · T2 · G terminal to case
8
400
500
Conditions
12
600
720
Ratings
3.0
30
3.7
3
0.3
6
0.5
–40 ~ +125
–40 ~ +125
2.0
1500
Unit
V
V
Unit
A
A
2
A
s
W
W
V
A
°C
°C
g
V
Feb.1999
ELECTRICAL CHARACTERISTICS
SUPPLY
VOLTAGE TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
V
D
(dv/dt)c
Symbol
DRM
I
VTM
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-c)
(dv/dt)c
✽2.Measurement using the gate trigger characteristics measurement circuit.
✽3.The critical-rate of rise of the off-state commutating voltage is shown in the table below.
✽4.The contact thermal resistance R
✽5.High sensitivity (I
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Parameter
✽2
✽2
GT≤10mA) is also available.
th (c-f) in case of greasing is 0.5°C/W.
j=125°C, VDRM applied
T
T
c=25°C, ITM=4.5A, Instantaneous measurement
!
@
T
j=25°C, VD=6V, RL=6Ω, RG=330Ω
#
!
@
j=25°C, VD=6V, RL=6Ω, RG=330Ω
T
#
j=125°C, VD=1/2VDRM
T
Junction to case
Test conditions
✽4
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3PM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
Min.
—
—
—
—
—
—
—
—
0.2
—
✽3
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.5
1.5
1.5
1.5
4.5
Unit
mA
V
V
V
V
✽5
30
mA
✽5
30
mA
✽5
mA
30
—
—
V
°C/W
V/µs
Voltage
class
8
12
V
DRM
(V)
400
600
Min.
5
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
2
10
7
TC = 25°C
5
3
2
1
10
7
5
3
2
0
10
7
5
ON-STATE CURRENT (A)
3
2
–1
10
(dv/dt) c
Unit
V/µs
Test conditions
1. Junction temperature
T
j=125°C
2. Rate of decay of on-state commutating current
(di/dt)
c=–1.5A/ms
3. Peak off-state voltage
V
D=400V
RATED SURGE ON-STATE CURRENT
40
35
30
25
20
15
10
5
SURGE ON-STATE CURRENT (A)
3.80.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4
0
10023 5710123 5710
Commutating voltage and current waveforms
44
(inductive load)
2
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
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