Mitsubishi Electric Corporation Semiconductor Group BCR3KM-14 Datasheet
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
➁
➀
➂
Measurement point of
case temperature
✽
➀
➁
➂
T1TERMINAL
T
2
TERMINAL
GATE TERMINAL
15 ± 0.314 ± 0.5
10 ± 0.3 2.8 ± 0.2
φ
3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
2.54 ± 0.252.54 ± 0.25
2.6 ± 0.2
4.5 ± 0.2
0.75 ± 0.15
3 ± 0.33.6 ± 0.3
6.5 ± 0.3
➀➁➂
E
BCR3KM-14
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR3KM-14
●
IT (RMS)
●
VDRM
●
IFGT !, IRGT
●
Viso
..................................................................
.................................................................
!
, IRGT
.....................................
#
..................................................................
3A
700V
30mA
2000V
OUTLINE DRAWING Dimensions in mm
TO-220FN
APPLICATION
Contactless AC switches, light dimmer, electric blankets, control of household equipment
such as electric fan, solenoid drivers, small motor control, other general purpose control
applications
MAXIMUM RATINGS
Symbol
VDRM
VDSM
Symbol
IT (RMS)
ITSM
2
I
t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
iso
V
✽1. Gate open.
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
RMS on-state current
Surge on-state current
2
I
t
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
—
Weight
Isolation voltage
Parameter
Parameter
for fusing
Voltage class
✽1
✽1
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=108°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
a
=25°C, AC 1 minute, T1 · T2 · G terminal to case
T
14
700
840
Ratings
3
30
3.7
3
0.3
6
0.5
–40 ~ +125
–40 ~ +125
2.0
2000
Unit
V
V
Unit
A
A
2
A
s
W
W
V
A
°C
°C
g
V
Feb.1999
INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol Parameter Test conditions
IDRM
VTM
Repetitive peak off-state current
On-state voltage
VFGT !
VRGT !
Gate trigger voltage
VRGT #
IFGT !
IRGT !
Gate trigger current
IRGT #
VGD
Rth (j-c)
(dv/dt)c
✽2.The critical-rate of rise of the off-state commutating voltage is shown in the table below.
✽3.The contact thermal resistance R
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
th (c-f) in case of greasing is 0.5°C/W.
Tj=125°C, VDRM applied
c=25°C, ITM=4.5A, Instantaneous measurement
T
!
@
T
j=25°C, VD=6V, RL=6Ω, RG=330Ω
#
!
j=25°C, VD=6V, RL=6Ω, RG=330Ω
T
@
#
T
j=125°C, VD=1/2VDRM
Junction to case
✽3
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3KM-14
LOW POWER USE
Min.
—
—
—
—
—
—
—
—
0.2
—
✽2
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.6
1.5
1.5
1.5
4.0
30
30
30
—
—
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/W
V/µs
Voltage
class
VDRM
(V)
Symbol
14 700
PERFORMANCE CURVES
2
10
7
TC = 25°C
5
3
2
1
10
7
5
3
2
0
10
7
5
ON-STATE CURRENT (A)
3
2
–1
10
c
(dv/dt)
Min.
R
L
—
5
MAXIMUM ON-STATE
CHARACTERISTICS
Unit
1. Junction temperature
j=125°C
T
2. Rate of decay of on-state
V/µs
commutating current
(di/dt)
3. Peak off-state voltage
V
D=400V
3.80.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4
Test conditions
c=–1.5A/ms
Commutating voltage and current waveforms
(inductive load)
SUPPLY
VOLTAGE
MAIN
CURRENT
MAIN
VOLTAGE
(dv/dt)
c
RATED SURGE ON-STATE
CURRENT
40
35
30
25
20
15
10
5
SURGE ON-STATE CURRENT (A)
0
10023 5710123 5710
44
(di/dt)
TIME
c
TIME
TIME
V
D
2
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
Loading...