Mitsubishi Electric Corporation Semiconductor Group BCR3AS Datasheet
BCR3AS
6.5
5.0±0.2
2.3 2.3
0.9 MAX
1.0
5.5±0.2
2.3
10 MAX
0.5±0.1
0.5±0.2
0.8
1.5±0.2
1
.0 MAX
2
23
4
1
3
4
1
1
2
3
4
T
1
TERMINAL
T2 TERMINAL
GATE
TERMINAL
T2 TERMINAL
TYPE
NAME
VOLTAGE
CLASS
∗
2.3 MIN
∗
Measurement point of
case temperature
OUTLINE DRAWING
Dimensions
in mm
MP-3
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
•IT (RMS) ........................................................................3A
•V
DRM ..............................................................400V/600V
FGT !, IRGT !, IRGT # .........................15mA (10mA)
•I
APPLICATION
Hybrid IC, solid state relay, switching mode power supply, light dimmer,
electric fan, electric blankets,
control of household equipment such as washing machine,
other general purpose control applications
MAXIMUM RATINGS
Symbol
DRM
V
VDSM
Symbol
I
T (RMS)
ITSM
2
t
I
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
✽1. Gate open.
Parameter
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
Parameter
RMS on-state current
Surge on-state current
2
I
t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
✽2
Voltage class
✽1
✽1
Commercial frequency, sine full wave 360° conduction, T
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
8
400
500
Conditions
c=108°C
12
600
720
Ratings
3
30
3.7
3
0.3
6
0.3
–40 ~ +125
–40 ~ +125
0.26
Unit
V
V
Unit
A
A
2
A
s
W
W
V
A
°C
°C
g
Feb.1999
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
I
DRM
VTM
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-c)
(dv/dt)c
✽2.High sensitivity (IGT≤10mA) is also available.
✽3.The critical-rate of rise of the off-state commutating voltage is shown in the table below.
✽4.Case temperature is measured on the T
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Parameter
✽2
✽2
!
@
#
!
@
#
2 terminal.
Test conditions
T
j=125°C, VDRM applied
c=25°C, ITM=4.5A, Instantaneous measurement
T
j=25°C, VD=6V, RL=6Ω, RG=330Ω
T
j=25°C, VD=6V, RL=6Ω, RG=330Ω
T
j=125°C, VD=1/2VDRM
T
Junction to case
✽4
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3AS
LOW POWER USE
Min.
—
—
—
—
—
—
—
—
0.2
—
✽3
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.7
1.5
1.5
1.5
3.8
Unit
mA
V
V
V
V
✽2
15
mA
✽2
15
mA
✽2
15
mA
—
—
V
°C/W
V/µs
Voltage
class
8
12
V
DRM
(V)
400
600
(dv/dt) c
Min.
5
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
2
10
7
TC = 25°C
5
3
2
1
10
7
5
3
2
0
10
7
5
ON-STATE CURRENT (A)
3
2
–1
10
Unit
V/µs
Test conditions
1. Junction temperature
T
j=125°C
2. Rate of decay of on-state commutating current
c=–1.5A/ms
(di/dt)
3. Peak off-state voltage
D=400V
V
RATED SURGE ON-STATE CURRENT
40
35
30
25
20
15
10
5
SURGE ON-STATE CURRENT (A)
50 1234
0
10023 5710123 5710
Commutating voltage and current waveforms
SUPPLY
VOLTAGE TIME
MAIN CURRENT
MAIN
VOLTAGE
44
(dv/dt)c
(inductive load)
(di/dt)c
2
TIME
TIME
V
D
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
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