Mitsubishi Electric Corporation Semiconductor Group BCR2PM Datasheet
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR2PM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR2PM
¡IT (RMS)........................................................................2A
¡V
DRM..............................................................400V/600V
RGT !, IRGT # ....................................................... 10mA
¡I
OUTLINE DRAWING
10.5
MAX
5.2
5.0
17
TYPE
NAME
VOLTAGE
CLASS
3.6
MIN
13.5
2.54
➁
➀
➁
➂
➂
➀
1.3
2.54
➀➁➂
T1TERMINAL
T
2
TERMINAL
GATE TERMINAL
TO-220F
1.2
φ3.2 ± 0.2
MAX
0.8
8.5
4.5
Dimensions
in mm
2.8
0.5 2.6
APPLICATION
Switching mode power supply, light dimmer, electric flasher unit,
control of household equipment such as TV sets · stereo · refrigerator · washing machine · infrared
kotatsu · carpet, solenoid drivers, small motor control,
copying machine, electric tool,
other general purpose control applications
MAXIMUM RATINGS
Conditions
Voltage class
12
600
720
Ratings
2
10
0.41
1
0.1
6
1
–40 ~ +125
–40 ~ +125
2.0
Unit
V
V
Unit
A
A
2
A
s
W
W
V
A
°C
°C
g
Feb.1999
Symbol
DRM
V
VDSM
Symbol
I
T (RMS)
ITSM
2
t
I
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
✽1. Gate open.
Parameter
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
Parameter
RMS on-state current
Surge on-state current
2
I
t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
✽1
8
✽1
Commercial frequency, sine full wave 360° conduction
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
400
500
ELECTRICAL CHARACTERISTICS
Symbol
DRM
I
VTM
VRGT !
VRGT #
IRGT !
IRGT #
VGD
Rth (j-a)
✽2.Measurement using the gate trigger characteristics measurement circuit.
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Thermal resistance
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω
Parameter
✽2
✽2
6Ω
j=125°C, VDRM applied
T
T
a=25°C, ITM=1.5A, Instantaneous measurement
@
T
j=25°C, VD=6V, RL=6Ω, RG=330Ω
#
@
T
j=25°C, VD=6V, RL=6Ω, RG=330Ω
#
j=125°C, VD=1/2VDRM
T
Junction to ambient, Natural convection
Test conditions
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR2PM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
Min.
—
—
—
—
—
—
0.1
—
Limits
Typ.
—
—
—
—
—
—
—
—
Max.
0.5
1.6
2.0
2.0
Unit
mA
V
V
V
10
mA
10
mA
—
40
V
°C/W
6V
A
R
V
G
TEST PROCEDURE 3TEST PROCEDURE 2
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
2
10
7
5
Tj = 25°C
3
2
1
10
7
5
3
2
0
10
7
5
ON-STATE CURRENT (A)
3
2
–1
10
6V
A
R
V
G
RATED SURGE ON-STATE CURRENT
10
9
8
7
6
5
4
3
2
1
SURGE ON-STATE CURRENT (A)
3.80.6 1.4 2.2 3.01.0 1.8 2.6 3.4
0
10023 5710
44
1
23 5710
2
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
Loading...