Mitsubishi Electric Corporation Semiconductor Group BCR25B, BCR25A Datasheet
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR25A, BCR25B
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
BCR25A, BCR25B
APPLICATION
Contactless AC switches, light dimmer,
on/off control of copier lamps
✽1. Gate open.
•IT (RMS) ......................................................................25A
•V
DRM ..............................................................400V/500V
•I
FGT !, IRGT # ........................................................50mA
•I
RGT ! .....................................................................75mA
Symbol
I
T (RMS)
ITSM
I
2
t
PGM
PG (AV)
VGM
IGM
TI
Tstg
—
—
Parameter
RMS on-state current
Surge on-state current
I
2
t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mounting torque
Weight
Conditions
Commercial frequency, sine full wave, 360° conduction, T
c=92°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
BCR25A only
BCR25A (Typical value)
BCR25B (Typical value)
Unit
A
A
A
2
s
W
W
V
A
°C
°C
kg·cm
N·m
g
Ratings
25
250
262
5.0
0.5
10
2.0
–20 ~ +125
–20 ~ +125
30
2.94
18
23
Symbol
V
DRM
VDSM
Parameter
Repetitive peak off-state voltage
✽1
Non-repetitive peak off-state voltage
✽1
Voltage class
Unit
V
V
MAXIMUM RATINGS
8
400
600
10
500
600
1
2
3
φ3.3 MIN
(19.6)
φ1.3 MIN
29 MAX
3.7 MIN
1.9 MAX
15.5 MAX
37 MAX
8.0
17
3
3
1
2
(φ14)
8.5
M6×1.0
13 MAX
3
39 MAX
2-φ4.2 MIN
φ3.3 MIN
φ1.3 MIN
28.5 MAX
2.5 MAX
16 MAX
26 MAX
37 MAX
3
8.5
30±0.2
φ14.2 MAX
1
2
3
8.0
3
1
2
3
T
1
TERMINAL
T
2
TERMINAL
GATE
TERMINAL
OUTLINE DRAWING
Dimensions
in mm
BCR25B
BCR25A
Feb.1999
4.40.4 1.2 2.0 2.8 3.60.8 1.6 2.4 3.2 4.0
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
TC = 25°C
10023 5710
1
80
40
23 5710
2
44
120
160
320
200
240
280
0
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR25A, BCR25B
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
Symbol
I
DRM
VTM
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-c)
(dv/dt)c
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
✽2
Gate trigger current
✽2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Test conditions
T
j=125°C, VDRM applied
T
c=25°C, ITM=40A, Instantaneous measurement
T
j=25°C, VD=6V, RL=6Ω, RG=330Ω
T
j=25°C, VD=6V, RL=6Ω, RG=330Ω
T
j=125°C, VD=1/2VDRM
Junction to case
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/W
V/µs
Typ.
—
—
—
—
—
—
—
—
—
—
—
!
@
#
!
@
#
ELECTRICAL CHARACTERISTICS
✽2.Measurement using the gate trigger characteristics measurement circuit.
✽3.The critical-rate of rise of the off-state commutating voltage is shown in the table below.
Test conditions
Voltage
class
8
10
V
DRM
(V)
400
500
Min.
—
20
—
20
Commutating voltage and current waveforms
(inductive load)
(dv/dt) c
Symbol
R
L
R
L
Unit
V/µs
1. Junction temperature
T
j=125°C
2. Rate of decay of on-state commutating current
(di/dt)
c=–13.5A/ms
3. Peak off-state voltage
V
D=400V
Limits
Min.
—
—
—
—
—
—
—
—
0.2
—
✽3
Max.
5.0
1.6
3.0
3.0
3.0
50
75
50
—
1.0
—
SUPPLY
VOLTAGE TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
V
D
(dv/dt)c
PERFORMANCE CURVES
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