Mitsubishi Electric Corporation Semiconductor Group BCR20E, BCR20C, BCR20B, BCR20A Datasheet

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR20A, BCR20B, BCR20C, BCR20E

MEDIUM POWER USE

A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE

BCR20A, BCR20B, BCR20C, BCR20E

•IT (RMS) ......................................................................20A

•V

DRM ..............................................................400V/500V

FGT !, IRGT !, IRGT # ...........................................30mA

•I

OUTLINE DRAWING

φ2.0 MIN

3

1

3

1
2
3

2

T
T
GATE



1

TERMINAL

2

TERMINAL

TERMINAL

17.5 MAX

BCR20A

φ8.7 MAX

φ11 MAX

1

Dimensions

3 MAX

9 MAX

2

in mm

24 MAX

APPLICATION

Contactless AC switches, light dimmer,
on/off control of traffic signals, on/off control of copier lamps, microwave ovens,
solid state relay

MAXIMUM RATINGS

Symbol

DRM

V
VDSM

Symbol

T (RMS)

I

ITSM

2

t

I

PGM
PG (AV)
VGM
IGM
Tj
Tstg

✽1. Gate open.

Parameter

Repetitive peak off-state voltage
Non-repetitive peak off-state voltage

Parameter

RMS on-state current

Surge on-state current

2

t

for fusing

I

Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature

✽1

8

✽1

Commercial frequency, sine full
wave, 360° conduction

60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state

current

400
600

Voltage class

Conditions Unit

BCR20A, B, C
BCR20E

T

c=98°C

T

b=64°C

12
500
700

Ratings

20

220

203

5.0

0.5
10

2.0

–20 ~ +125
–20 ~ +125

Unit

V
V

A

A

2

A

s

W
W

V
A

°C
°C

Feb.1999

BCR20A, BCR20B, BCR20C, BCR20E

SUPPLY
VOLTAGE TIME

TIME

TIME

MAIN CURRENT

MAIN
VOLTAGE

(di/dt)c

V

D

(dv/dt)c

A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE

MAXIMUM RATINGS (continue)

Symbol

V

iso

—

Weight (Typical value)

—

Soldering temperature

—

Mounting torque

Isolated voltage

Parameter

BCR20A
BCR20B
BCR20C
BCR20E
BCR20A only, 10 sec.

BCR20C only

BCR20E only, T

a=25°C, AC 1 minute, T2 terminal to base

ELECTRICAL CHARACTERISTICS

Symbol

DRM

I

VTM

VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-c)
Rth (j-b)

(dv/dt)c

✽2.Measurement using the gate trigger characteristics measurement circuit.
✽3.The critical-rate of rise of the off-state commutating voltage is shown in the table below.

Repetitive peak off-state current

On-state voltage

Gate trigger voltage

Gate trigger current

Gate non-trigger voltage

Thermal resistance

Critical-rate of rise of off-state
commutating voltage

Parameter

✽2

✽2

j=125°C, VDRM applied

T

c=25°C, Tb=25°C (BCR20E only), ITM=30A, Instantaneous

T
measurement

!

@

T

j=25°C, VD=6V, RL=6Ω, RG=330Ω

#

!

@

j=25°C, VD=6V, RL=6Ω, RG=330Ω

T

#

T

j=125°C, VD=1/2VDRM

Junction to case (BCR20A, BCR20B, BCR20C)
Junction to base (BCR20E)

Conditions

Test conditions

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

MEDIUM POWER USE

Unit

g

°C

kg·cm

N·m

V

Unit

mA

V

V
V
V

30

mA

30

mA

30

mA

—

—

V

°C/W
°C/W

V/µs

Min.

—

—

—
—
—
—
—
—

0.2
—
—

✽3

Ratings

Limits

Typ.

—

—

—
—
—
—
—
—
—
—
—

—

3.5

9.0

9.0
11

230

30

2.94

1500

Max.

3.0

1.5

1.5

1.5

1.5

1.1

2.4

Voltage

class

8

10

V

400

600

DRM

(V)

Symbol

R

L

R

L

(dv/dt) c

Min.

—

10

—

10

T

j=125°C

ing current
(di/dt)

c=–10A/ms

V

D=400V

Test conditions

Unit

1. Junction temperature

2. Rate of decay of on-state commutat-

V/µs

3. Peak off-state voltage

Commutating voltage and current waveforms

(inductive load)

Feb.1999