Mitsubishi Electric Corporation Semiconductor Group BCR20E, BCR20C, BCR20B, BCR20A Datasheet
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR20A, BCR20B, BCR20C, BCR20E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
BCR20A, BCR20B, BCR20C, BCR20E
•IT (RMS) ......................................................................20A
•V
DRM ..............................................................400V/500V
FGT !, IRGT !, IRGT # ...........................................30mA
•I
OUTLINE DRAWING
φ2.0 MIN
3
1
3
1
2
3
2
T
T
GATE
1
TERMINAL
2
TERMINAL
TERMINAL
17.5 MAX
BCR20A
φ8.7 MAX
φ11 MAX
1
Dimensions
3 MAX
9 MAX
2
in mm
24 MAX
APPLICATION
Contactless AC switches, light dimmer,
on/off control of traffic signals, on/off control of copier lamps, microwave ovens,
solid state relay
MAXIMUM RATINGS
Symbol
DRM
V
VDSM
Symbol
T (RMS)
I
ITSM
2
t
I
PGM
PG (AV)
VGM
IGM
Tj
Tstg
✽1. Gate open.
Parameter
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
Parameter
RMS on-state current
Surge on-state current
2
t
for fusing
I
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
✽1
8
✽1
Commercial frequency, sine full
wave, 360° conduction
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
400
600
Voltage class
Conditions Unit
BCR20A, B, C
BCR20E
T
c=98°C
T
b=64°C
12
500
700
Ratings
20
220
203
5.0
0.5
10
2.0
–20 ~ +125
–20 ~ +125
Unit
V
V
A
A
2
A
s
W
W
V
A
°C
°C
Feb.1999
BCR20A, BCR20B, BCR20C, BCR20E
SUPPLY
VOLTAGE TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
V
D
(dv/dt)c
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
MAXIMUM RATINGS (continue)
Symbol
V
iso
—
Weight (Typical value)
—
Soldering temperature
—
Mounting torque
Isolated voltage
Parameter
BCR20A
BCR20B
BCR20C
BCR20E
BCR20A only, 10 sec.
BCR20C only
BCR20E only, T
a=25°C, AC 1 minute, T2 terminal to base
ELECTRICAL CHARACTERISTICS
Symbol
DRM
I
VTM
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-c)
Rth (j-b)
(dv/dt)c
✽2.Measurement using the gate trigger characteristics measurement circuit.
✽3.The critical-rate of rise of the off-state commutating voltage is shown in the table below.
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Parameter
✽2
✽2
j=125°C, VDRM applied
T
c=25°C, Tb=25°C (BCR20E only), ITM=30A, Instantaneous
T
measurement
!
@
T
j=25°C, VD=6V, RL=6Ω, RG=330Ω
#
!
@
j=25°C, VD=6V, RL=6Ω, RG=330Ω
T
#
T
j=125°C, VD=1/2VDRM
Junction to case (BCR20A, BCR20B, BCR20C)
Junction to base (BCR20E)
Conditions
Test conditions
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
MEDIUM POWER USE
Unit
g
°C
kg·cm
N·m
V
Unit
mA
V
V
V
V
30
mA
30
mA
30
mA
—
—
V
°C/W
°C/W
V/µs
Min.
—
—
—
—
—
—
—
—
0.2
—
—
✽3
Ratings
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
3.5
9.0
9.0
11
230
30
2.94
1500
Max.
3.0
1.5
1.5
1.5
1.5
1.1
2.4
Voltage
class
8
10
V
400
600
DRM
(V)
Symbol
R
L
R
L
(dv/dt) c
Min.
—
10
—
10
T
j=125°C
ing current
(di/dt)
c=–10A/ms
V
D=400V
Test conditions
Unit
1. Junction temperature
2. Rate of decay of on-state commutat-
V/µs
3. Peak off-state voltage
Commutating voltage and current waveforms
(inductive load)
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR20A, BCR20B, BCR20C, BCR20E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
OUTLINE DRAWING
BCR20B BCR20EBCR20C
2-φ3.2 MIN
1
3
23±0.2
33 MAX
3
T
1
1
T
2
2
GATE
3
TERMINAL
2
TERMINAL
TERMINAL
φ2.0 MIN
φ8.7 MAX
19 MAX
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
3
10
7
TC = 25°C
5
b
= 25°C
T
3
2
2
10
7
5
3
2
1
10
7
5
ON-STATE CURRENT (A)
3
2
0
10
Dimensions
in mm
(φ16)
23±0.2
2
5.3 MAX
1
20 MAX
12 MAX
1.8 MAX
21 MAX
22.5 MAX
2-φ3.2 MIN
20 MAX
(16.2)
25.5 MAX
φ2.0 MIN
19.5 MAX
1.9 MIN
10 MAX
3
1
10.5 MAX
1.8 MAX
2
14
1
φ8.7 MAX
3 MIN
M6×1.0
26 MAX
11 MAX
2
φ2.5 MIN
φ2.0 MIN
φ8.7 MAX
22 MAX
21 MAX
φ33 MAX
3
RATED SURGE ON-STATE CURRENT
320
280
240
200
160
120
80
40
SURGE ON-STATE CURRENT (A)
4.40.4 1.2 2.0 2.8 3.60.8 1.6 2.4 3.2 4.0
0
10023 5710
44
1
23 5710
2
ON-STATE VOLTAGE (V)
GATE CHARACTERISTICS
3
2
1
10
7
5
3
VGT = 1.5V
2
0
10
7
5
3
GATE VOLTAGE (V)
2
I
FGT I, IRGT I, IRGT III
–1
10
7
5
1
2310
5710223 5710323 5710
GATE CURRENT (mA)
P
G(AV)
= 0.5WVGM = 10V
PGM = 5.0W
VGD = 0.2V
IGM = 2A
CONDUCTION TIME
(CYCLES AT 60Hz)
GATE TRIGGER CURRENT·VOLTAGE VS.
JUNCTION TEMPERATURE
200
100 (%)
)
)
= t°C
= 25°C
j
j
T
T
(
(
180
160
140
TEST PROCEDURE Ι, ΙΙ AND ΙΙΙ
GATE TRIGGER CURRENT
120
100
80
GATE TRIGGER
60
VOLTAGE
40
20
4
0
GATE TRIGGER • CURRENT VOLTAGE
GATE TRIGGER • CURRENT VOLTAGE
0 20 40 80 100120140
JUNCTION TEMPERATURE (°C)
16060–20–40
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR20A, BCR20B, BCR20C, BCR20E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE) (BCR20A, B, C)
1.6
2
2310
5710
3
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
TRANSIENT THERMAL IMPEDANCE (°C/W)
–1
2310
5710023 5
710123 5710
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM ON-STATE POWER
DISSIPATION
50
45
40
360°
CONDUCTION
35
RESISTIVE,
30
INDUCTIVE
LOADS
25
20
15
10
5
ON-STATE POWER DISSIPATION (W)
0
41220
8162428
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO BASE) (BCR20E)
3.2
2
5710323 5710423 5710
2310
5
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
2
TRANSIENT THERMAL IMPEDANCE (°C/W)
–1
2310
5710023 5710123 5710
2
CONDUCTION TIME
(CYCLES AT 60Hz)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
160
BCR20A, BCR20B,
BCR20C
140
120
100
80
BCR20E
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
60
40
CURVES APPLY
BASE TEMPERATURE (°C)
320
REGARDLESS
CASE TEMPERATURE (°C)
20
OF CONDUCTION
ANGLE
0
4162428
812 20
320
RMS ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
(BCR20A)
160
140
120
100
80
60
40
20
AMBIENT TEMPERATURE (°C)
0
160 160 t4.0
120 120 t3.0
80 80 t2.0
ALL FINS ARE
BLACK PAINTED
ALUMINUM AND GREASED
CURVES APPLY
REGARDLESS
OF CONDUCTION
ANGLE
NATURAL CONVECTION
:
WITH SOLDER
: MOUNTING PLATE
WITHOUT GREASE
4162428
812 20
RMS ON-STATE CURRENT (A)
MOUNTING ON FIN
320
RMS ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
(BCR20B)
160
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
140
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
120
100
80
160 160 t4.0
120 120 t3.0
80 80 t2.0
60
40
20
AMBIENT TEMPERATURE (°C)
0
4162428
812 20
NATURAL
CONVECTION
:
WITHOUT GREASE
:
WITH GREASE
RMS ON-STATE CURRENT (A)
MOUNTING ON FIN
INSULATED PLATE
320
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR20A, BCR20B, BCR20C, BCR20E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
(BCR20C)
160
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
140
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
120
100
80
160 160 t4.0
120 120 t3.0
80 80 t2.0
60
NATURAL
40
20
AMBIENT TEMPERATURE (°C)
0
4162428
812 20
CONVECTION
:
MOUNTING ON FIN
WITHOUT GREASE
:
MICA PLATE
WITH GREASE
320
RMS ON-STATE CURRENT (A)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω 6Ω
6V 6V
A
G
V
R
A
R
V
G
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
(BCR20E)
160
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
140
RESISTIVE, INDUCTIVE LOADS
NATURAL CONVECTION
120
100
80
60
40
20
AMBIENT TEMPERATURE (°C)
0
4162428
160 160 t4.0
120 120 t3.0
80 80 t2.0
CURVES APPLY
REGARDLESS
OF CONDUCTION
ANGLE
812 20
RMS ON-STATE CURRENT (A)
320
TEST PROCEDURE 1
6Ω
6V
A
V
TEST PROCEDURE 3
TEST PROCEDURE 2
R
G
Feb.1999
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