Mitsubishi Electric Corporation Semiconductor Group BCR20AM Datasheet
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR20AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR20AM
●
IT (RMS)
●
●
......................................................
VDRM
IFGT !, IRGT
................................................................
400V / 600V
!
, IRGT
...................
#
30mA (20mA)
20A
✽5
OUTLINE DRAWING Dimensions in mm
TYPE
NAME
VOLTAGE
CLASS
➁➃
➀
MAX.
16
MIN.
12.5
➂
3.2 ± 0.23.6
➀
➁
➂
➃
10.5 MAX.
➃
7.0
φ
3.6 ± 0.2
1.0
0.8
2.52.5 2.60.5
➀➁➂
T1TERMINAL
2
TERMINAL
T
GATE TERMINAL
T2TERMINAL
4.5
E
4.5
Measurement point of
✽
case temperature
1.3
TO-220
APPLICATION
Vacuum cleaner, light dimmer, copying machine, other control of motor and heater
MAXIMUM RATINGS
Symbol
VDRM
VDSM
Symbol
IT (RMS)
ITSM
2
I
t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
✽1. Gate open.
Parameter
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
Parameter Ratings
RMS on-state current
Surge on-state current
2
for fusing
I
t
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
✽1
8
✽1
Commercial frequency, sine full wave, Tc=105°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
400
500
Voltage class
12
600
720
Conditions
20
200
167
5
0.5
10
2
–40 ~ +125
–40 ~ +125
2.0
Unit
V
V
Unit
A
A
2
A
s
W
W
V
A
°C
°C
g
Feb.1999
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol Parameter Test conditions
IDRM
VTM
Repetitive peak off-state current
On-state voltage
VFGT !
VRGT !
Gate trigger voltage
✽2
VRGT #
IFGT !
IRGT !
Gate trigger current
✽2
IRGT #
VGD
Rth (j-c)
(dv/dt)c
✽2. Measurement using the gate trigger characteristics measurement circuit.
✽3.The critical-rate of rise of the off-state commutating voltage is shown in the table below.
✽4.The contact thermal resistance R
✽5.High sensitivity (I
Voltage
class
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
GT ≤ 20mA) is also available. (IGT itme ➀)
V
DRM
(V)
th (c-f) in case of greasing is 1°C/W.
(dv/dt)
Symbol
R
Min.
—
8 400
L
R
10
—
12 600
L
10
Tj=125°C, VDRM applied
c=25°C, ITM=30A, Instantaneous measurement
T
!
@
T
j=25°C, VD=6V, RL=6Ω, RG=330Ω
#
!
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
@
#
Tj=125°C, VD=1/2VDRM
Junction to case
c
Unit
V/µs
✽4
Test conditions
1. Junction temperature
T
j=125°C
2. Rate of decay of on-atate
commutating current
(dv/dt)
c=–10A/ms
3. Peak off-state voltage
V
D=400V
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR20AM
MEDIUM POWER USE
✽3
✽3
Limits
Typ.
Min.
—
—
—
—
—
—
—
—
0.2
—
✽3
Max.
—
2.0
—
1.5
—
1.5
—
1.5
—
1.5
—
30
30
—
30
—
—
0.8
—
—
Commutating voltage and current waveforms
(inductive load)
SUPPLY
VOLTAGE
MAIN
CURRENT
MAIN
VOLTAGE
(dv/dt)
c
(di/dt)
Unit
mA
✽5
mA
✽5
mA
✽5
mA
—
°C/W
—
V/µs
TIME
c
TIME
TIME
V
D
V
V
V
V
V
PERFORMANCE CURVES
3
10
7
5
3
2
2
10
7
5
3
2
1
10
7
5
ON-STATE CURRENT (A)
3
2
0
10
ON-STATE VOLTAGE (V)
MAXIMUM ON-STATE
CHARACTERISTICS
Tj = 125°C
Tj = 25°C
RATED SURGE ON-STATE
CURRENT
200
180
160
140
120
100
80
60
40
20
SURGE ON-STATE CURRENT (A)
4.00.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6
0
10023 5710
44
1
23 5710
2
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
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