Mitsubishi Electric Corporation Semiconductor Group BCR16CS Datasheet
BCR16CS
231
4
TYPE
NAME
VOLTAGE
CLASS
10.5 MAX
5
1
0.8
4.5
1.3
0.5
3.0
+0.3
–0.5
0
+0.3
–0
(1.5)
1.5 MAX
1.5 MAX
8.6±0.3
9.8±0.5
2.6±0.4
4.5
∗
OUTLINE DRAWING
Dimensions
in mm
TO-220S
24
1
3
1
2
3
4
T
1
TERMINAL
T2 TERMINAL
GATE
TERMINAL
T
2
TERMINAL
∗
Measurement
point of case
temperature
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR16CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
•IT (RMS) ......................................................................16A
•V
DRM ..............................................................400V/600V
FGT !, IRGT !, IRGT # .........................30mA (20mA)
•I
APPLICATION
Solid state relay, hybrid IC
MAXIMUM RATINGS
✽1. Gate open.
Symbol
DRM
V
VDSM
Symbol
I
T (RMS)
ITSM
2
t
I
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Parameter
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
Parameter
RMS on-state current
Surge on-state current
2
I
t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
✽5
Voltage class
✽1
✽1
Commercial frequency, sine full wave 360° conduction, T
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
8
400
500
Conditions
c=100°C
12
600
720
Ratings
16
170
121
5.0
0.5
10
2
–40 ~ +125
–40 ~ +125
1.2
Unit
V
V
Unit
A
A
2
A
s
W
W
V
A
°C
°C
g
Feb.1999
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
SUPPLY
VOLTAGE TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
V
D
(dv/dt)c
ELECTRICAL CHARACTERISTICS
Symbol
DRM
I
VTM
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-c)
(dv/dt)c
✽2.Measurement using the gate trigger characteristics measurement circuit.
✽3.The critical-rate of rise of the off-state commutating voltage is shown in the table below.
✽4.The contact thermal resistance R
✽5.High sensitivity (I
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Parameter
j=125°C, VDRM applied
T
T
c=25°C, ITM=25A, Instantaneous measurement
✽2
✽2
GT≤20mA) is also available. (IGT item 1)
th (c-f) in case of greasing is 1.0°C/W.
!
@
T
j=25°C, VD=6V, RL=6Ω, RG=330Ω
#
!
@
j=25°C, VD=6V, RL=6Ω, RG=330Ω
T
#
j=125°C, VD=1/2VDRM
T
Junction to case
Test conditions
✽4
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR16CS
MEDIUM POWER USE
Min.
—
—
—
—
—
—
—
—
0.2
—
✽3
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.5
1.5
1.5
1.5
1.4
Unit
mA
V
V
V
V
✽5
30
mA
✽5
30
mA
✽5
mA
30
—
—
V
°C/W
V/µs
Voltage
class
8
12
V
DRM
(V)
400
600
(dv/dt) c
Symbol
R
L
R
L
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
3
10
7
5
3
2
2
10
Tj = 125°C
7
5
3
2
1
10
7
5
ON-STATE CURRENT (A)
3
2
0
10
Min.
—
10
—
10
Tj = 25°C
T
j=125°C
ing current
(di/dt)
c=–8A/ms
V
D=400V
Test conditions
Unit
1. Junction temperature
2. Rate of decay of on-state commutat-
V/µs
3. Peak off-state voltage
4.40.4 1.2 2.4 3.20.8 1.6 2.0 2.8 3.6 4.0
Commutating voltage and current waveforms
(inductive load)
RATED SURGE ON-STATE CURRENT
200
180
160
140
120
100
80
60
40
20
SURGE ON-STATE CURRENT (A)
0
10023 5710
44
1
23 5710
2
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
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