Mitsubishi Electric Corporation Semiconductor Group BCR12PM Datasheet
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR12PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR12PM
T (RMS) ......................................................................12A
•I
DRM ..............................................................400V/600V
•V
FGT !, IRGT !, IRGT # .........................30mA (20mA)
•I
•Viso........................................................................ 1500V
• UL Recognized: File No. E80276
✽5
OUTLINE DRAWING
10.5 MAX
5.2
5.0
17
TYPE
NAME
VOLTAGE
CLASS
3.6
13.5 MIN
2.54
2
1
2
3
3
1
2.54
231
T
1
TERMINAL
T
2
TERMINAL
GATE TERMINAL
TO-220F
1.2
8.5
φ3.2±0.2
1.3 MAX
0.8
∗ Measurement point of
case temperature
4.5
Dimensions
in mm
2.8
0.5 2.6
APPLICATION
Switching mode power supply, light dimmer, electric flasher unit, hair driver,
control of household equipment such as TV sets · stereo · refrigerator · washing machine · infrared
kotatsu · carpet, solenoid drivers, small motor control,
copying machine, electric tool
MAXIMUM RATINGS
Conditions
Voltage class
c=74°C
12
600
720
Ratings
12
120
60
5
0.5
10
2
–40 ~ +125
–40 ~ +125
2.0
1500
Unit
V
V
Unit
A
A
2
A
s
W
W
V
A
°C
°C
g
V
Feb.1999
Symbol
DRM
V
VDSM
Symbol
I
T (RMS)
ITSM
2
t
I
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
V
iso
✽1. Gate open.
Parameter
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
Parameter
RMS on-state current
Surge on-state current
2
I
t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Isolation voltage
✽1
8
✽1
Commercial frequency, sine full wave 360° conduction, T
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
T
a=25°C, AC 1 minute, T1 · T2 · G terminal to case
400
500
ELECTRICAL CHARACTERISTICS
SUPPLY
VOLTAGE TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
V
D
(dv/dt)c
Symbol
DRM
I
VTM
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-c)
(dv/dt)c
✽2.Measurement using the gate trigger characteristics measurement circuit.
✽3.The critical-rate of rise of the off-state commutating voltage is shown in the table below.
✽4.The contact thermal resistance R
✽5.High sensitivity (I
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Parameter
j=125°C, VDRM applied
T
T
c=25°C, ITM=20A, Instantaneous measurement
✽2
✽2
GT≤20mA) is also available. (IGT item 1)
th (c-f) in case of greasing is 0.5°C/W.
!
@
T
j=25°C, VD=6V, RL=6Ω, RG=330Ω
#
!
@
j=25°C, VD=6V, RL=6Ω, RG=330Ω
T
#
j=125°C, VD=1/2VDRM
T
Junction to case
Test conditions
✽4
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR12PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
Min.
—
—
—
—
—
—
—
—
0.2
—
✽3
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.6
1.5
1.5
1.5
3.5
Unit
mA
V
V
V
V
✽5
30
mA
✽5
30
mA
✽5
mA
30
—
—
V
°C/W
V/µs
Voltage
class
8
12
V
DRM
(V)
400
600
(dv/dt) c
Symbol
R
L
R
L
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
2
10
7
5
3
2
1
10
7
5
3
2
0
10
7
5
ON-STATE CURRENT (A)
3
2
–1
10
Tj = 25°C
Min.
—
10
—
10
Tj = 125°C
T
j=125°C
ing current
(di/dt)
c=–6.0A/ms
V
D=400V
Test conditions
Unit
1. Junction temperature
2. Rate of decay of on-state commutat-
V/µs
3. Peak off-state voltage
3.80.6 1.4 2.2 3.01.0 1.8 2.6 3.4
Commutating voltage and current waveforms
(inductive load)
RATED SURGE ON-STATE CURRENT
200
180
160
140
120
100
80
60
40
20
SURGE ON-STATE CURRENT (A)
0
10023 5710
44
1
23 5710
2
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
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