Mitsubishi Electric Corporation Semiconductor Group BCR12KM-14 Datasheet
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
➁
➀
➂
Measurement point of
case temperature
✽
➀
➁
➂
T1TERMINAL
T
2
TERMINAL
GATE TERMINAL
15 ± 0.314 ± 0.5
10 ± 0.3 2.8 ± 0.2
φ
3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
2.54 ± 0.252.54 ± 0.25
2.6 ± 0.2
4.5 ± 0.2
0.75 ± 0.15
3 ± 0.33.6 ± 0.3
6.5 ± 0.3
➀➁➂
E
BCR12KM-14
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR12KM-14
●
IT (RMS)
●
VDRM
●
IFGT !, IRGT
●
Viso
................................................................
.................................................................
!
, IRGT
....................................
#
..................................................................
12A
700V
30mA
2000V
OUTLINE DRAWING Dimensions in mm
TO-220FN
APPLICATION
Switching mode power supply, light dimmer, electric flasher unit, hair driver,
control of household equipment such as TV sets • stereo • refrigerator • washing machine •
infrared kotatsu • carpet, solenoid drivers, small motor control, copying machine, electric tool
MAXIMUM RATINGS
Symbol
VDRM
VDSM
Symbol
IT (RMS)
ITSM
2
I
t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
iso
V
✽1. Gate open.
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
RMS on-state current
Surge on-state current
2
I
t
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
—
Weight
Isolation voltage
Parameter
Parameter
for fusing
Voltage class
✽1
✽1
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=81°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
a
=25°C, AC 1 minute, T1 · T2 · G terminal to case
T
14
700
840
Ratings
12
120
60
5
0.5
10
2
–40 ~ +125
–40 ~ +125
2.0
2000
Unit
V
V
Unit
A
A
2
A
s
W
W
V
A
°C
°C
g
V
Feb.1999
INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol Parameter Test conditions
IDRM
VTM
Repetitive peak off-state current
On-state voltage
VFGT !
VRGT !
Gate trigger voltage
VRGT #
IFGT !
IRGT !
Gate trigger current
IRGT #
VGD
Rth (j-c)
(dv/dt)c
✽2.The critical-rate of rise of the off-state commutating voltage is shown in the table below.
✽3.The contact thermal resistance R
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
th (c-f) in case of greasing is 0.5°C/W.
Tj=125°C, VDRM applied
c=25°C, ITM=20A, Instantaneous measurement
T
!
@
T
j=25°C, VD=6V, RL=6Ω, RG=330Ω
#
!
j=25°C, VD=6V, RL=6Ω, RG=330Ω
T
@
#
T
j=125°C, VD=1/2VDRM
Junction to case
✽3
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR12KM-14
MEDIUM POWER USE
Min.
—
—
—
—
—
—
—
—
0.2
—
✽2
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.6
1.5
1.5
1.5
3.0
30
30
30
—
—
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/W
V/µs
Voltage
class
VDRM
(V)
Symbol
14 700
PERFORMANCE CURVES
2
10
7
5
3
2
1
10
7
5
3
2
0
10
7
5
ON-STATE CURRENT (A)
3
2
–1
10
c
(dv/dt)
Min.
R
L
—
10
MAXIMUM ON-STATE
CHARACTERISTICS
Tj = 125°C
Tj = 25°C
Unit
1. Junction temperature
j=125°C
T
2. Rate of decay of on-state
V/µs
commutating current
(di/dt)
3. Peak off-state voltage
V
D=400V
3.80.6 1.4 2.2 3.01.0 1.8 2.6 3.4
Test conditions
c=–6.0A/ms
Commutating voltage and current waveforms
(inductive load)
SUPPLY
VOLTAGE
MAIN
CURRENT
MAIN
VOLTAGE
(dv/dt)
c
RATED SURGE ON-STATE
CURRENT
200
180
160
140
120
100
80
60
40
20
SURGE ON-STATE CURRENT (A)
0
10023 5710
44
1
23 5710
(di/dt)
TIME
c
TIME
TIME
V
D
2
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
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