Mitsubishi Electric Corporation Semiconductor Group BCR10UM Datasheet

Feb.1999
MITSUBISHI SEMICONDUCTOR TRIAC
BCR10UM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
APPLICATION
Light dimmer
¡IT (RMS)...................................................................... 10A
¡V
DRM..............................................................400V/600V
¡I
FGT !, IRGT !, IRGT # ........................................... 15mA
¡V
iso........................................................................1500V
Symbol
V
DRM
VDSM
Parameter
Repetitive peak off-state voltage
1
Non-repetitive peak off-state voltage
1
Voltage class
Unit
V V
MAXIMUM RATINGS
8 400 500
12 600 720
1. Gate open.
Symbol
I
T (RMS)
ITSM
I
2
t
PGM PG (AV) VGM IGM Tj Tstg
V
iso
Parameter RMS on-state current Surge on-state current
I
2
t
for fusing
Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Isolation voltage
Conditions
Commercial frequency, sine full wave 360° conduction, T
c=93°C
3
60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value T
a=25°C, AC 1 minute, T1 · T2 · G terminal to case
Unit
A A
A
2
s
W W
V A
°C °C
g V
Ratings
10
100
41.6
5
0.5 10
2 –40 ~ +125 –40 ~ +125
2.3
1500
TYPE NAME
VOLTAGE CLASS
Measurement point of
case temperature
OUTLINE DRAWING
Dimensions
in mm
TO-220
➀➁➂
T1 TERMINAL T
2 TERMINAL
GATE TERMINAL
4.5
2.54
2.54
1.27
0.6
10.2
0.8
1.4
φ3.8 ± 0.2
2.6 ± 0.4
13.0
MIN
4.2
MAX
15.5
2.8 ± 0.2
4.5
Feb.1999
10023 5710
1
40 30 20 10
23 5710
2
44
50
60
70
80
90
100
0
3.80.6
10
0
10
2
7 5
3 2
10
1
7 5
3 2
7 5
3 2
10
–1
3.43.02.62.21.81.41.0
Tj = 125°C
Tj = 25°C
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
MITSUBISHI SEMICONDUCTOR TRIAC
BCR10UM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
Symbol
I
DRM
VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD Rth (j-c)
Test conditions
T
j=125°C, VDRM applied
T
c=25°C, ITM=15A, Instantaneous measurement
T
j=25°C, VD=6V, RL=6, RG=330
T
j=25°C, VD=6V, RL=6, RG=330
T
j=125°C, VD=1/2VDRM
Junction to case
3 4
Unit
mA
V V V
V mA mA mA
V
°C/W
Typ.
— — — — — — — — — —
Parameter
Repetitive peak off-state current On-state voltage
Gate trigger voltage
2
Gate trigger current
2
Gate non-trigger voltage Thermal resistance
!
@
#
!
@
#
ELECTRICAL CHARACTERISTICS
Limits
Min.
— — — — — — — —
0.2 —
Max.
2.0
1.5
1.5
1.5
1.5 15 15 15 —
2.7
2.Measurement using the gate trigger characteristics measurement circuit.3.Case temperature is measured at the T
2 terminal 1.5mm away from the molded case.
4.The contact thermal resistance R
th (c-f) in case of greasing is 1.0°C/W.
PERFORMANCE CURVES
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