Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10UM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
APPLICATION
Light dimmer
BCR10UM
¡IT (RMS)...................................................................... 10A
¡V
DRM..............................................................400V/600V
¡I
FGT !, IRGT !, IRGT # ........................................... 15mA
¡V
iso........................................................................1500V
Symbol
V
DRM
VDSM
Parameter
Repetitive peak off-state voltage
✽1
Non-repetitive peak off-state voltage
✽1
Voltage class
Unit
V
V
MAXIMUM RATINGS
8
400
500
12
600
720
✽1. Gate open.
Symbol
I
T (RMS)
ITSM
I
2
t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
V
iso
Parameter
RMS on-state current
Surge on-state current
I
2
t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Isolation voltage
Conditions
Commercial frequency, sine full wave 360° conduction, T
c=93°C
✽3
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
T
a=25°C, AC 1 minute, T1 · T2 · G terminal to case
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
V
Ratings
10
100
41.6
5
0.5
10
2
–40 ~ +125
–40 ~ +125
2.3
1500
TYPE
NAME
VOLTAGE
CLASS
✽
Measurement point of
case temperature
OUTLINE DRAWING
Dimensions
in mm
TO-220
➀
➀
➁
➁
➂
➀➁➂
➂
T1 TERMINAL
T
2 TERMINAL
GATE TERMINAL
✽
4.5
2.54
2.54
1.27
0.6
10.2
0.8
1.4
φ3.8 ± 0.2
2.6 ± 0.4
13.0
MIN
4.2
MAX
15.5
2.8 ± 0.2
4.5
Feb.1999
10023 5710
1
40
30
20
10
23 5710
2
44
50
60
70
80
90
100
0
3.80.6
10
0
10
2
7
5
3
2
10
1
7
5
3
2
7
5
3
2
10
–1
3.43.02.62.21.81.41.0
Tj = 125°C
Tj = 25°C
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10UM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
Symbol
I
DRM
VTM
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-c)
Test conditions
T
j=125°C, VDRM applied
T
c=25°C, ITM=15A, Instantaneous measurement
T
j=25°C, VD=6V, RL=6Ω, RG=330Ω
T
j=25°C, VD=6V, RL=6Ω, RG=330Ω
T
j=125°C, VD=1/2VDRM
Junction to case
✽3 ✽4
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/W
Typ.
—
—
—
—
—
—
—
—
—
—
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
✽2
Gate trigger current
✽2
Gate non-trigger voltage
Thermal resistance
!
@
#
!
@
#
ELECTRICAL CHARACTERISTICS
Limits
Min.
—
—
—
—
—
—
—
—
0.2
—
Max.
2.0
1.5
1.5
1.5
1.5
15
15
15
—
2.7
✽2.Measurement using the gate trigger characteristics measurement circuit.
✽3.Case temperature is measured at the T
2 terminal 1.5mm away from the molded case.
✽4.The contact thermal resistance R
th (c-f) in case of greasing is 1.0°C/W.
PERFORMANCE CURVES