Mitsubishi Electric Corporation Semiconductor Group BCR10PM Datasheet
BCR10PM
OUTLINE DRAWING
Dimensions
in mm
TO-220F
TYPE
NAME
VOLTAGE
CLASS
φ3.2±0.2
1.3 MAX
0.8
2.54
13.5 MIN
3.6
5.0
1.2
8.5
10.5 MAX
5.2
4.5
231
2
1
3
1
2
3
T
1
TERMINAL
T
2
TERMINAL
GATE TERMINAL
17
2.54
2.8
0.5 2.6
∗ Measurement point of
case temperature
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
•IT (RMS) ......................................................................10A
DRM ..............................................................400V/600V
•V
FGT !, IRGT !, IRGT # .........................30mA (20mA)
•I
•Viso........................................................................ 1500V
• UL Recognized: File No. E80276
APPLICATION
Switching mode power supply, light dimmer, electric flasher unit, hair drier,
control of household equipment such as TV sets · stereo · refrigerator · washing machine · infrared
kotatsu · carpet, small motor control,
copying machine, electric tool, solenoid drivers, other general purpose control applications
MAXIMUM RATINGS
Symbol
DRM
V
VDSM
Symbol
I
T (RMS)
ITSM
2
t
I
PGM
PG (AV)
VGM
IGM
Tj
Tstg
V
iso
✽1. Gate open.
—
Parameter
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
RMS on-state current
Surge on-state current
I
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Isolation voltage
Parameter
2
t
for fusing
✽5
Voltage class
✽1
✽1
Commercial power frequency, sine full wave 360° conduction, T
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
T
a=25°C, AC 1 minute, T1 · T2 · G terminal to case
8
400
500
Conditions
12
600
720
c=85°C
Ratings
10
100
41.6
5
0.5
10
2
–40 ~ +125
–40 ~ +125
2.0
1500
Unit
V
V
Unit
A
A
2
A
s
W
W
V
A
°C
°C
g
V
Feb.1999
ELECTRICAL CHARACTERISTICS
SUPPLY
VOLTAGE TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
V
D
(dv/dt)c
Symbol
DRM
I
VTM
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-c)
(dv/dt)c
✽2.Measurement using the gate trigger characteristics measurement circuit.
✽3.The critical-rate of rise of the off-state commutating voltage is shown in the table below.
✽4.The contact thermal resistance R
✽5.High sensitivity (I
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Parameter
j=125°C, VDRM applied
T
T
c=25°C, ITM=15A, Instantaneous measurement
✽2
✽2
GT≤20mA) is also available. (IGT item 1)
th (c-f) in case of greasing is 0.5°C/W.
!
@
T
j=25°C, VD=6V, RL=6Ω, RG=330Ω
#
!
@
j=25°C, VD=6V, RL=6Ω, RG=330Ω
T
#
j=125°C, VD=1/2VDRM
T
Junction to case
Test conditions
✽4
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
Min.
—
—
—
—
—
—
—
—
0.2
—
✽3
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.5
1.5
1.5
1.5
3.5
Unit
mA
V
V
V
V
✽5
30
mA
✽5
30
mA
✽5
mA
30
—
—
V
°C/W
V/µs
Voltage
class
8
12
V
DRM
(V)
400
600
(dv/dt) c
Symbol
R
L
R
L
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
2
10
7
5
3
2
1
10
7
5
3
2
0
10
7
5
ON-STATE CURRENT (A)
3
2
–1
10
Tj = 25°C
Min.
—
10
—
10
Tj = 125°C
T
j=125°C
ing current
(di/dt)
c=–5.0A/ms
V
D=400V
Test conditions
Unit
1. Junction temperature
2. Rate of decay of on-state commutat-
V/µs
3. Peak off-state voltage
3.80.6 1.4 2.2 3.01.0 1.8 2.6 3.4
Commutating voltage and current waveforms
(inductive load)
RATED SURGE ON-STATE CURRENT
100
90
80
70
60
50
40
30
20
10
SURGE ON-STATE CURRENT (A)
0
10023 5710
44
1
23 5710
2
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
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