Mitsubishi Electric Corporation Semiconductor Group BCR08AM-14 Datasheet
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR08AM-14
LOW POWER USE
PLANAR PASSIVATION TYPE
BCR08AM-14
●
IT (RMS)
●
VDRM
●
IFGT !, IRGT
...............................................................
.................................................................
!
, IRGT
.......................................
#
0.8A
700V
5mA
OUTLINE DRAWING Dimensions in mm
φ
5.0 MAX.
4.4
VOLTAGE
0.7
CLASS
NAME
1.25 1.25
➀
TYPE
5.0 MAX.
12.5 MIN.
1.3
➂
➁
3.9 MAX.
➁
➂
➀
T1TERMINAL
➀
2
TERMINAL
T
➁
GATE TERMINAL
➂
CIRCUMSCRIBE
CIRCLE
φ
JEDEC : TO-92
APPLICATION
Contactless AC switches, heating, refrigerator, washing machine, electric fan,
vending machines, trigger circuit for low and medium triac, solid state relay,
other general purpose control applications
MAXIMUM RATINGS
Symbol
VDRM
VDSM
Symbol
IT (RMS)
ITSM
2
I
t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
✽1. Gate open.
Parameter
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
Parameter
RMS on-state current
Surge on-state current
2
for fusing
I
t
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
✽1
✽1
Commercial frequency, sine full wave 360° conduction, Tc=67°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Voltage class
Conditions
14
700
840
Ratings
–40 ~ +125
–40 ~ +125
0.8
0.26
0.1
0.23
Unit
V
V
Unit
A
8
1
6
1
A
2
A
s
W
W
V
A
°C
°C
g
Feb.1999
ELECTRICAL CHARACTERISTICS
Symbol Parameter Test conditions
IDRM
VTM
Repetitive peak off-state current
On-state voltage
VFGT !
VRGT !
Gate trigger voltage
VRGT #
IFGT !
IRGT !
Gate trigger current
IRGT #
VGD
Rth (j-c)
(dv/dt)c
✽2.The critical-rate of rise of the off-state commutating voltage is shown in the table below.
✽3.Case temperature is measured at the T
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
2 terminal 1.5mm away from the molded case.
Tj=125°C, VDRM applied
c=25°C, ITM=1.2A, Instantaneous measurement
T
!
@
T
j=25°C, VD=6V, RL=6Ω, RG=330Ω
#
!
j=25°C, VD=6V, RL=6Ω, RG=330Ω
T
@
#
T
j=125°C, VD=1/2VDRM
Junction to case
✽3
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR08AM-14
LOW POWER USE
PLANAR PASSIVATION TYPE
Min.
—
—
—
—
—
—
—
—
0.1
—
✽2
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
1.0
2.0
2.0
2.0
2.0
—
50
—
Unit
mA
V
V
V
V
5
mA
mA
5
5
mA
V
°C/W
V/µs
Voltage
class
V
DRM
(V)
(dv/dt)
Min. Unit
14 700 0.5 V/µs
PERFORMANCE CURVES
MAXIMUM ON-STATE
1
10
7
5
3
2
0
10
7
5
3
2
–1
10
ON-STATE CURRENT (A)
7
5
3
CHARACTERISTICS
2.01.5 2.5 3.5 4.03.0 5.0
c
1. Junction temperature
T
j=125°C
2. Rate of decay of on-state commutating
current
(di/dt)
3. Peak off-state voltage
V
D=400V
Test conditions
c=–0.4A/ms
Commutating voltage and current waveforms
SUPPLY
VOLTAGE
MAIN
CURRENT
MAIN
VOLTAGE
(dv/dt)
c
(inductive load)
(di/dt)
c
TIME
TIME
TIME
V
D
RATED SURGE ON-STATE
CURRENT
10
Tj = 25°C
8
6
4
2
SURGE ON-STATE CURRENT (A)
0
0
10
23 5710
44
1
23 5710
2
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
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