MITSUBISHI AN-UHF-072-C User Manual
APPLICATION NOTE
SUBJECT: RD09MUP2 single-stage amplifier RF performance at f=400-527MHz,Vdd=7.2V
SUMMARY:
This application note shows the RF wide-band characteristics data (Frequency characteristics, Pin vs.
Pout characteristics, Pout vs. Vdd characteristics ) at f=400 to 527MHz.
- Sample history:
Silicon RF Power Semiconductors
Document NO. AN-UHF-072-C
Date : 6
Rev.date : 30
Prepared : H.Komatsu, H,Ukita
Confirmed : S.Kametani
(Taking charge of Silicon RF by
th
Feb. 2006
th
Jul. 2010
K.Osaki, Y.Tanaka
MIYOSHI Electronics)
RD09MUP2: Lot number “103AB-G”
- Evaluate conditions:
@f=400MHz : Vdd=7.2V, Pin=1W, Idq=1A (Vgg adj.)
@f=470MHz : Vdd=7.2V, Pin=1W, Idq=1A (Vgg adj.)
@f=527MHz : Vdd=7.2V, Pin=1W, Idq=1A (Vgg adj.)
- Results:
Page 2 shows the Output Power, Drain Efficiency vs. Frequency data.
Page 3-5 shows the Output Power, Power Gain, Drain Efficiency vs. Input Power data.
Page 6-8 shows the Output Power, Drain Current, Drain Efficiency vs. Drain Voltage data.
Page 9 shows the Equivalent Circuit and schematic for test fixture.
Application Note for Silicon RF Power Semiconductors
1/10
RD09MUP2 single-stage amplifier RF performance at f=400-527MHz,Vdd=7.2V
RD09MUP2 Output Power, Drain Efficiency vs. Frequency
(@ f=400 – 527MHz, Pin=1W, Vdd=7.2V, Idq=1A)
AN-UHF-072-C
14
12
10
8
Po
6
Drain Current Idd(A)
Output Power Po(W) ,
4
Idd
2
0
370 390 410 430 450 470 490 510 530 550
Frequency(M Hz)
Freq. Vgg Output Power Gp Idd ηd
(MHz) (V) (dBm) (W) (dB) (A) (%) (dB) (dBc) (dBc)
370 2.4 38.7 7.4 8.7 2.08 50.0 -1.9 -30.2 <-60
380 2.4 39.1 8.1 9.1 2.12 53.3 -2.0 -33.2 <-60
390 2.4 39.2 8.2 9.1 2.05 56.1 -2.1 -32.0 <-60
400 2.4 39.2 8.3 9.2 1.99 58.1 -2.3 -32.3 <-60
410 2.4 39.2 8.4 9.2 1.94 60.2 -2.5 -39.8 <-60
420 2.4 39.2 8.3 9.2 1.90 61.1 -2.8 -46.8 <-60
430 2.4 39.1 8.2 9.1 1.88 61.1 -3.2 -53.7 <-60
440 2.4 39.1 8.2 9.1 1.87 60.9 -3.8 <-60 <-60
450 2.4 39.1 8.1 9.1 1.88 60.3 -4.6 -50.7 <-60
460 2.4 39.2 8.2 9.2 1.91 60.3 -5.7 -46.7 <-60
470 2.4 39.2 8.3 9.2 1.93 60.3 -7.3 -50.8 <-60
480 2.4 39.2 8.4 9.2 1.94 60.1 -9.6 -55.2 <-60
490 2.4 39.2 8.4 9.2 1.95 60.2 -13.2 -58.3 <-60
500 2.4 39.2 8.3 9.2 1.93 60.3 -18.5 <-60 <-60
510 2.4 39.1 8.1 9.1 1.88 60.5 -20.1 <-60 <-60
520 2.4 38.9 7.7 8.9 1.79 60.4 -15.0 <-60 <-60
530 2.4 38.5 7.1 8.5 1.65 59.8 -11.2 <-60 <-60
540 2.4 37.9 6.1 7.9 1.47 58.1 -8.5 <-60 <-60
550 2.4 37.0 5.1 7.0 1.29 54.8 -6.6 <-60 <-60
Pin=1W
Vdd=7. 2V
Idq=1A
ηd
80
70
60
50
40
Drain Efficiency ηd(% )
30
20
10
0
-10
R.L
-20
2fo
-30
-40
2nd Harmonic 2fo(dBc )
-50
-60
370 390 410 430 450 470 490 510 530 550
Frequenc y(MHz)
Pin=1W
Vdd=7.2V
Idq= 1A
0
-5
-10
-15
-20
-25
-30
Return Loss R.L(dB)
Return
Loss
2fo 3fo
Application Note for Silicon RF Power Semiconductors
2/10
RD09MUP2 single-stage amplifier RF performance at f=400-527MHz,Vdd=7.2V
RD09MUP2 Output Power, Power Gain, Drain Efficiency vs. Input Power
(@ f=400MHz, Vdd=7.2V, Idq=1A)
AN-UHF-072-C
40
f=400MHz
Vdd=7.2V
35
Idq=1A
30
25
20
15
Power Gain GP(dB)
Output Power P o(dBm) ,
10
5
0
0 5 10 15 20 25 30 35
Po
GP
ηd
Input Power Pin(dBm)
80
70
60
50
40
30
20
10
0
Drain Efficiency ηd (%)
Vgg Pin Pin Output Power Gp Idd ηd
(V) (dBm) (W) (dBm) (W) (dB) (A) (%) (dB) (dBc) (dBc)
2.4 0.0 0.00 12.7 0.0 12.7 1.03 0.2 -2.8 <-60 <-60
2.4 1.0 0.00 13.6 0.0 12.6 1.03 0.3 -2.8 <-60 <-60
2.4 2.0 0.00 14.6 0.0 12.6 1.04 0.4 -2.8 <-60 <-60
2.4 3.0 0.00 15.6 0.0 12.6 1.04 0.5 -2.8 <-60 <-60
2.4 4.0 0.00 16.6 0.0 12.6 1.04 0.6 -2.8 -50.0 <-60
2.4 5.0 0.00 17.6 0.1 12.6 1.04 0.8 -2.8 -49.3 <-60
2.4 6.0 0.00 18.6 0.1 12.6 1.04 1.0 -2.8 -49.7 <-60
2.4 7.0 0.01 19.6 0.1 12.6 1.04 1.2 -2.8 -48.7 <-60
2.4 8.0 0.01 20.6 0.1 12.6 1.04 1.5 -2.8 -48.8 <-60
2.4 9.0 0.01 21.6 0.1 12.6 1.05 1.9 -2.8 -48.0 <-60
2.4 10.0 0.01 22.6 0.2 12.6 1.05 2.4 -2.8 -46.8 <-60
2.4 11.0 0.01 23.6 0.2 12.6 1.05 3.0 -2.8 -46.3 <-60
2.4 12.0 0.02 24.6 0.3 12.6 1.05 3.8 -2.8 -44.8 <-60
2.4 13.0 0.02 25.6 0.4 12.6 1.06 4.7 -2.8 -44.3 <-60
2.4 14.0 0.03 26.5 0.5 12.5 1.06 5.9 -2.8 -43.5 <-60
2.4 15.0 0.03 27.5 0.6 12.5 1.07 7.3 -2.8 -42.3 <-60
2.4 16.0 0.04 28.5 0.7 12.5 1.08 9.2 -2.7 -41.2 <-60
2.4 17.0 0.05 29.5 0.9 12.5 1.09 11.3 -2.7 -40.0 <-60
2.4 18.0 0.06 30.5 1.1 12.5 1.11 13.9 -2.7 -39.0 <-60
2.4 19.0 0.08 31.4 1.4 12.4 1.13 17.0 -2.7 -37.7 <-60
2.4 20.0 0.10 32.3 1.7 12.3 1.16 20.5 -2.7 -36.3 <-60
2.4 21.0 0.13 33.3 2.1 12.3 1.20 24.6 -2.7 -34.8 <-60
2.4 22.0 0.16 34.2 2.6 12.2 1.25 29.1 -2.7 -33.5 <-60
2.4 23.0 0.20 35.0 3.2 12.0 1.31 33.5 -2.7 -32.3 <-60
2.4 24.0 0.25 35.8 3.8 11.8 1.40 37.9 -2.6 -31.8 <-60
2.4 25.0 0.32 36.6 4.5 11.6 1.49 42.2 -2.6 -32.0 <-60
2.4 26.0 0.40 37.3 5.3 11.3 1.60 46.3 -2.6 -32.7 <-60
2.4 27.0 0.50 37.9 6.1 10.9 1.70 49.8 -2.5 -33.2 <-60
2.4 28.0 0.63 38.4 6.9 10.4 1.81 52.9 -2.4 -33.5 <-60
2.4 29.0 0.79 38.8 7.6 9.8 1.90 55.5 -2.4 -33.0 <-60
2.4 30.0 1.00 39.2 8.3 9.2 1.99 57.7 -2.3 -32.3 <-60
2.4 31.0 1.26 39.5 8.9 8.5 2.07 59.5 -2.2 -31.5 <-60
2.4 32.0 1.59 39.7 9.4 7.7 2.14 60.9 -2.1 -30.5 <-60
2.4 33.0 2.00 39.9 9.9 6.9 2.20 62.2 -2.0 -29.8 <-60
Return
Loss 2fo 3fo
Application Note for Silicon RF Power Semiconductors
3/10
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