APPLICATION NOTE
Silicon RF Power Semiconductors
Document NO. AN-UHF-060-A
Date : 19
Rev.date : 22
Prepared : M.Wada, S.Kametani
Confirmed : T.Ohkawa
(Taking change of Silicon RF By
MIYOSHI Electronics)
SUBJECT: RD01MUS1 RF Characteristics at Vdd=3.6/ 4.5/ 7.2V
SUMMARY:
- Sample history:
Assembly Lot number : 3X2
th
Oct. 2004
th
June. 2010
- Sample quantity: RD01MUS1: 3 pieces
Pin-Po is one device data (#3).
- Evaluate conditions:
It is basic on following specifications
f=135MHz,Pin=30mW,Vdd=7.2V,Idq=100mA(Vgg adj.)
f=527MHz,Pin=30mW,Vdd=7.2V,Idq=100mA(Vgg adj.)
- Results: Page 2 shows RF data
Page 3-4 show Pin-Po data (@Vdd=3.6V)
Page 5-6 show Pin-Po data (@Vdd=4.5V)
Page 7-8 show Pin-Po data (@Vdd=7.2V)
Page 9-10 show matching circuit
Application Note for Silicon RF Power Semiconductors
1/10
RD01MUS1 RF Characteristics at Vdd=3.6/4.5V/7.2V
- AN-UHF-060 -A
1. RD01MUS1 RF data
Conditons: f=135MHz, Vdd=7.2V, Idq=100mA Pin=30mW
S/N f Vdd Vgg Pin Pout Pout Gp ID(RF) ηd R.Loss
#1 135 3.6
#2 135
#3 135
#1 135 4.5
#2 135
#3 135
#1 135 7.2
#2 135
#3 135
(MHz) (V) (V) (W) (dBm) (W) (dB) (A) (%) (dB)
2.576
2.646
2.621
2.572
2.632
2.600
2.524
2.598
2.574
0.030 26.14 0.41 11.4 0.186 61.37
0.030 26.13 0.41 11.4 0.188 60.68
0.030 26.07 0.40 11.3 0.187 60.05
0.030 28.09 0.64 13.3 0.227 63.06
0.030 28.02 0.63 13.3 0.226 62.30
0.030 28.00 0.63 13.2 0.225 62.34
0.030 31.98 1.58 17.2 0.336 65.26
0.030 31.96 1.57 17.2 0.337 64.69
0.030 31.95 1.57 17.2 0.338 64.32
Conditons: f=527MHz, Vdd=7.2V, Idq=100mA Pin=30mW
S/N f Vdd Vgg Pin Pout Pout Gp ID(RF) ηd R.Loss
#1 527 3.6
#2 527
#3 527
#1 527 4.5
#2 527
#3 527
#1 527 7.2
#2 527
#3 527
(MHz) (V) (V) (W) (dBm) (W) (dB) (A) (%) (dB)
2.586
2.654
2.629
2.629
2.634
2.619
2.535
2.603
2.588
0.030 26.01 0.40 11.2 0.176 63.04
0.030 25.90 0.39 11.1 0.175 61.72
0.030 25.95 0.39 11.2 0.176 62.04
0.030 27.86 0.61 13.1 0.213 63.67
0.030 27.78 0.60 13.0 0.211 63.17
0.030 27.81 0.60 13.1 0.213 63.06
0.030 31.60 1.45 16.8 0.313 64.21
0.030 31.44 1.39 16.7 0.307 62.96
0.030 31.59 1.44 16.8 0.314 63.83
-16.19
-14.80
-16.03
-15.59
-14.60
-15.55
-14.90
-13.81
-14.52
-16.28
-12.66
-14.45
-16.00
-12.12
-12.54
-12.01
-11.54
-10.71
Application Note for Silicon RF Power Semiconductors
2/10
RD01MUS1 RF Characteristics at Vdd=3.6/4.5V/7.2V
)
2. RD01MUS1 Pin-Po data (@f=135MHz, Vdd=3.6V)
- AN-UHF-060 -A
35
30
25
20
15
10
Po (dBm) , Gain (dB
Po
Gain
ηd
Pin v s. Po , Ga i n & ηd
80
70
60
50
40
30
ηd (%)
5
20
0
-10 -5 0 5 10 15 20
Pin ( d B m)
10
f= 135 (MHz)
Vdd= 3.6 (V)
Idq= 100 (mA)
Vgg= 2.61 (V)
PoPin
(dBm) (W) (dBm) (W) (A) (%) (dB) (dB) 2fo(dBc) 3fo(dBc)
-10.03 0.000 12.73 0.02 0.101 5.15 22.76 -6.00 <-50 <-50
-9.00 0.000 13.72 0.02 0.102 6.41 22.71 -7.07 <-50 <-50
-8.09 0.000 14.67 0.03 0.102 7.98 22.76 -7.56 <-50 <-50
-6.98 0.000 15.64 0.04 0.103 9.87 22.61 -8.31 <-50 <-50
-5.96 0.000 16.58 0.05 0.104 12.15 22.54 -9.06 <-50 <-50
-5.07 0.000 17.50 0.06 0.107 14.60 22.57 -9.50 <-50 <-50
-4.01 0.000 18.41 0.07 0.110 17.52 22.43 -10.15 <-50 <-50
-3.03 0.000 19.29 0.08 0.112 21.05 22.32 -10.51 -36.99 <-50
-2.05 0.001 20.14 0.10 0.117 24.52 22.19 -10.85 -37.17 <-50
-1.03 0.001 20.96 0.12 0.122 28.43 21.99 -11.10 -37.11 <-50
-0.09 0.001 21.73 0.15 0.127 32.56 21.82 -11.15 -36.05 <-50
0.94 0.001 22.47 0.18 0.133 36.87 21.53 -11.34 -36.22 <-50
1.91 0.002 23.12 0.21 0.141 40.44 21.21 -11.48 -36.42 <-50
2.91 0.002 23.71 0.24 0.148 44.15 20.80 -11.59 -35.20 <-50
3.93 0.002 24.23 0.26 0.154 47.72 20.30 -11.77 -35.54 <-50
4.92 0.003 24.64 0.29 0.161 50.24 19.72 -11.97 -35.23 <-50
5.96 0.004 24.98 0.31 0.167 52.39 19.02 -12.33 -35.30 <-50
6.97 0.005 25.24 0.33 0.171 54.28 18.27 -12.73 -35.36 <-50
7.99 0.006 25.44 0.35 0.176 55.22 17.45 -13.20 -35.73 <-50
8.99 0.008 25.59 0.36 0.179 56.24 16.60 -13.80 -35.71 -42.95
10.00 0.010 25.72 0.37 0.180 57.60 15.72 -14.39 -35.46 -43.04
11.02 0.013 25.83 0.38 0.183 58.05 14.81 -15.03 -35.77 <-50
12.02 0.016 25.92 0.39 0.184 58.94 13.89 -15.58 -35.56 -43.62
13.03 0.020 25.99 0.40 0.185 59.65 12.96 -16.06 -35.80 -43.44
14.02 0.025 26.06 0.40 0.186 60.21 12.04 -16.38 -36.03 <-50
15.03 0.032 26.11 0.41 0.187 60.69 11.08 -15.84 -35.77 -43.33
16.02 0.040 26.16 0.41 0.186 61.72 10.14 -15.84 -35.66 -44.12
17.01 0.050 26.21 0.42 0.186 62.39 9.20 -15.75 -34.86 <-50
18.00 0.063 26.25 0.42 0.186 63.00 8.25 -15.60 -35.19 -44.23
19.02 0.080 26.29 0.43 0.188 62.92 7.27 -15.39 -34.75 -43.85
Idd ηdGainR.L.
armonicsHarmonics
Application Note for Silicon RF Power Semiconductors
3/10
RD01MUS1 RF Characteristics at Vdd=3.6/4.5V/7.2V
)
3. RD01MUS1 Pin-Po data (@f=527MHz, Vdd=3.6V)
Pin v s. Po , Ga i n & ηd
- AN-UHF-060 -A
35
30
25
20
15
10
Po (dBm) , Gain (dB
5
Po
Gain
ηd
80
70
60
50
40
30
20
ηd (%)
0
-10 -5 0 5 10 15 20
Pin ( d B m)
10
f= 527 (MHz)
Vdd= 3.6 (V)
Idq= 100 (mA)
Vgg= 2.619 (V)
PoPin
(dBm) (W) (dBm) (W) (A) (%) (dB) (dB) 2fo(dBc) 3fo(dBc)
-10.15 0.000 9.85 0.01 0.102 2.63 20.00 -1.91 <-50 <-50
-9.05 0.000 10.83 0.01 0.103 3.27 19.88 -2.89 <-50 <-50
-8.01 0.000 11.82 0.02 0.103 4.10 19.82 -3.17 <-50 <-50
-7.01 0.000 12.80 0.02 0.103 5.14 19.81 -3.35 <-50 <-50
-6.00 0.000 13.79 0.02 0.104 6.40 19.79 -3.45 <-50 <-50
-4.97 0.000 14.76 0.03 0.105 7.92 19.73 -3.58 <-50 <-50
-4.00 0.000 15.72 0.04 0.106 9.79 19.73 -3.61 -33.01 <-50
-2.99 0.001 16.68 0.05 0.106 12.21 19.67 -3.73 -34.02 <-50
-1.98 0.001 17.62 0.06 0.108 14.87 19.60 -3.80 -33.36 <-50
-0.99 0.001 18.54 0.07 0.110 18.02 19.52 -3.85 -32.69 <-50
0.01 0.001 19.41 0.09 0.112 21.67 19.40 -2.97 -31.92 <-50
1.01 0.001 20.25 0.11 0.116 25.34 19.23 -3.01 -31.29 <-50
2.00 0.002 21.05 0.13 0.120 29.49 19.05 -3.03 -29.87 <-50
3.00 0.002 21.81 0.15 0.125 33.70 18.80 -3.03 -29.28 <-50
4.05 0.003 22.52 0.18 0.129 38.48 18.47 -3.09 -28.31 -39.24
5.04 0.003 23.16 0.21 0.136 42.29 18.12 -3.16 -27.63 -38.87
6.03 0.004 23.72 0.24 0.141 46.37 17.68 -3.33 -26.91 -38.70
7.02 0.005 24.19 0.26 0.146 49.90 17.16 -3.65 -26.49 -37.87
8.01 0.006 24.57 0.29 0.151 52.74 16.57 -4.13 -25.71 -37.33
9.03 0.008 24.89 0.31 0.155 55.30 15.87 -4.82 -25.47 -36.69
10.02 0.010 25.14 0.33 0.158 57.44 15.12 -5.62 -25.21 -36.27
11.04 0.013 25.35 0.34 0.162 58.71 14.31 -6.56 -25.17 -35.87
12.05 0.016 25.51 0.36 0.164 60.23 13.46 -7.54 -24.99 -34.90
13.06 0.020 25.65 0.37 0.167 61.04 12.59 -8.52 -24.95 -35.57
14.07 0.026 25.76 0.38 0.169 61.97 11.70 -9.42 -24.78 -35.81
15.07 0.032 25.86 0.39 0.171 62.68 10.79 -10.17 -24.90 -35.65
16.05 0.040 25.95 0.39 0.173 63.24 9.90 -10.70 -24.82 -35.52
17.06 0.051 26.03 0.40 0.174 64.05 8.97 -11.05 -24.85 -35.55
18.05 0.064 26.11 0.41 0.175 64.77 8.05 -11.18 -24.92 -35.58
19.05 0.080 26.18 0.41 0.177 65.05 7.12 -11.16 -25.00 -35.10
Idd ηdGainR.L.
armonicsHarmonics
Application Note for Silicon RF Power Semiconductors
4/10
RD01MUS1 RF Characteristics at Vdd=3.6/4.5V/7.2V
)
4. RD01MUS1 Pin-Po data (@f=135MHz, Vdd=4.5V)
Pin v s. Po , Ga i n & ηd
- AN-UHF-060 -A
35
30
25
20
15
10
Po (dBm) , Gain (dB
5
Po
Gain
ηd
80
70
60
50
40
30
20
ηd (%)
0
-10 -5 0 5 10 15 20
Pin ( d B m)
10
f= 135 (MHz)
Vdd= 4.5 (V)
Idq= 100 (mA)
Vgg= 2.611 (V)
PoPin
(dBm) (W) (dBm) (W) (A) (%) (dB) (dB) 2fo(dBc) 3fo(dBc)
-9.84 0.000 13.10 0.02 0.104 4.36 22.94 -6.23 <-50 <-50
-8.89 0.000 14.09 0.03 0.105 5.43 22.98 -7.02 <-50 <-50
-7.84 0.000 15.05 0.03 0.105 6.77 22.89 -7.61 <-50 <-50
-6.85 0.000 16.02 0.04 0.108 8.23 22.88 -8.72 <-50 <-50
-5.81 0.000 16.98 0.05 0.109 10.17 22.79 -9.31 <-50 <-50
-4.86 0.000 17.91 0.06 0.111 12.36 22.77 -9.95 <-50 <-50
-3.89 0.000 18.84 0.08 0.115 14.80 22.73 -10.54 -36.84 <-50
-2.79 0.001 19.75 0.09 0.117 17.94 22.54 -11.14 -37.03 <-50
-1.89 0.001 20.63 0.12 0.121 21.22 22.51 -11.45 -36.12 <-50
-0.85 0.001 21.50 0.14 0.127 24.73 22.35 -12.09 -36.60 <-50
0.13 0.001 22.32 0.17 0.133 28.53 22.20 -12.40 -35.20 <-50
1.13 0.001 23.15 0.21 0.141 32.52 22.01 -12.65 -35.14 <-50
2.10 0.002 23.90 0.25 0.149 36.61 21.80 -12.87 -35.40 <-50
3.09 0.002 24.64 0.29 0.160 40.39 21.54 -13.07 -34.60 <-50
4.09 0.003 25.33 0.34 0.170 44.56 21.23 -13.18 -34.41 <-50
5.10 0.003 25.93 0.39 0.181 48.12 20.83 -13.21 -34.55 <-50
6.12 0.004 26.45 0.44 0.192 51.15 20.33 -13.26 -34.38 <-50
7.12 0.005 26.86 0.49 0.199 54.24 19.74 -13.31 -34.38 <-50
8.14 0.007 27.17 0.52 0.207 55.96 19.04 -13.49 -34.58 <-50
9.13 0.008 27.39 0.55 0.212 57.49 18.26 -13.82 -34.41 <-50
10.15 0.010 27.56 0.57 0.217 58.43 17.41 -14.27 -34.67 <-50
11.16 0.013 27.70 0.59 0.220 59.43 16.53 -14.77 -34.67 <-50
12.17 0.016 27.81 0.60 0.223 60.13 15.63 -15.26 -34.95 <-50
13.18 0.021 27.90 0.62 0.225 60.84 14.71 -15.67 -34.83 -45.45
14.19 0.026 27.97 0.63 0.226 61.65 13.78 -15.34 -34.84 <-50
15.18 0.033 28.04 0.64 0.227 62.31 12.85 -15.45 -34.74 -45.80
16.19 0.042 28.10 0.65 0.228 62.90 11.91 -15.48 -34.46 <-50
17.16 0.052 28.15 0.65 0.227 63.96 10.99 -15.41 -34.44 <-50
18.16 0.065 28.20 0.66 0.228 64.40 10.04 -15.28 -33.93 <-50
19.17 0.083 28.25 0.67 0.228 65.10 9.08 -15.10 -33.74 <-50
Idd ηdGainR.L.
armonicsHarmonics
Application Note for Silicon RF Power Semiconductors
5/10
RD01MUS1 RF Characteristics at Vdd=3.6/4.5V/7.2V
)
5. RD01MUS1 Pin-Po data (@f=527MHz, Vdd=4.5V)
Pin v s. Po , Ga i n & ηd
- AN-UHF-060 -A
35
30
25
20
15
10
Po (dBm) , Gain (dB
5
Po
Gain
ηd
80
70
60
50
40
30
20
ηd (%)
0
-10 -5 0 5 10 15 20
Pin ( d B m)
10
f= 527 (MHz)
Vdd= 4.5 (V)
Idq= 100 (mA)
Vgg= 2.601 (V)
PoPin
(dBm) (W) (dBm) (W) (A) (%) (dB) (dB) 2fo(dBc) 3fo(dBc)
-9.93 0.000 10.61 0.01 0.100 2.55 20.53 -2.74 <-50 <-50
-8.98 0.000 11.59 0.01 0.100 3.21 20.57 -3.50 <-50 <-50
-7.99 0.000 12.59 0.02 0.100 4.03 20.58 -3.75 <-50 <-50
-6.96 0.000 13.58 0.02 0.101 5.01 20.53 -4.02 <-50 <-50
-5.94 0.000 14.58 0.03 0.102 6.26 20.52 -4.20 -33.26 <-50
-4.99 0.000 15.57 0.04 0.104 7.70 20.55 -4.32 -33.26 <-50
-4.01 0.000 16.54 0.05 0.105 9.55 20.55 -4.38 -32.62 <-50
-3.00 0.001 17.54 0.06 0.105 12.00 20.53 -4.54 -32.21 <-50
-2.00 0.001 18.50 0.07 0.108 14.57 20.50 -4.67 -31.37 <-50
-0.98 0.001 19.49 0.09 0.111 17.79 20.46 -4.78 -30.72 <-50
0.00 0.001 20.42 0.11 0.115 21.30 20.42 -4.85 -29.77 <-50
0.99 0.001 21.35 0.14 0.120 25.28 20.36 -4.98 -28.29 <-50
1.99 0.002 22.24 0.17 0.127 29.29 20.25 -4.30 -27.69 <-50
2.98 0.002 23.08 0.20 0.133 33.95 20.10 -4.37 -26.37 <-50
4.02 0.003 23.87 0.24 0.141 38.42 19.85 -4.42 -25.75 -40.47
5.02 0.003 24.58 0.29 0.150 42.51 19.56 -4.42 -25.16 -39.26
6.02 0.004 25.22 0.33 0.159 46.44 19.20 -4.40 -24.82 -38.86
7.02 0.005 25.76 0.38 0.168 49.86 18.74 -4.49 -24.46 -38.71
8.03 0.006 26.22 0.42 0.175 53.15 18.19 -4.72 -24.28 -37.27
9.04 0.008 26.59 0.46 0.182 55.65 17.55 -5.13 -23.98 -37.02
10.05 0.010 26.88 0.49 0.187 58.00 16.84 -5.70 -24.02 -36.48
11.07 0.013 27.13 0.52 0.192 59.73 16.05 -6.42 -23.96 -36.07
12.08 0.016 27.32 0.54 0.197 60.84 15.24 -7.22 -23.97 -36.18
13.10 0.020 27.48 0.56 0.200 62.17 14.38 -8.06 -23.94 -35.49
14.11 0.026 27.61 0.58 0.203 63.18 13.50 -8.85 -23.97 -35.62
15.11 0.032 27.73 0.59 0.206 63.92 12.61 -9.51 -24.02 -35.60
16.09 0.041 27.83 0.61 0.209 64.46 11.73 -10.00 -24.00 -35.44
17.11 0.051 27.91 0.62 0.212 64.85 10.81 -10.36 -24.05 -35.46
18.10 0.065 27.99 0.63 0.213 65.73 9.89 -10.53 -23.92 -35.34
19.11 0.081 28.07 0.64 0.215 66.24 8.96 -10.57 -24.15 -35.43
Idd ηdGainR.L.
armonicsHarmonics
Application Note for Silicon RF Power Semiconductors
6/10
RD01MUS1 RF Characteristics at Vdd=3.6/4.5V/7.2V
)
6. RD01MUS1 Pin-Po data (@f=135MHz, Vdd=7.2V)
Pin v s. Po , Ga i n & ηd
- AN-UHF-060 -A
35
30
25
20
15
10
Po (dBm) , Gain (dB
5
Po
Gain
ηd
80
70
60
50
40
30
20
ηd (%)
0
-10 -5 0 5 10 15 20
Pin ( d B m)
10
f= 135 (MHz)
Vdd= 7.2 (V)
Idq= 100 (mA)
Vgg= 2.574 (V)
PoPin
(dBm) (W) (dBm) (W) (A) (%) (dB) (dB) 2fo(dBc) 3fo(dBc)
-10.05 0.000 12.89 0.02 0.103 2.62 22.94 -6.77 <-50 <-50
-9.07 0.000 13.86 0.02 0.103 3.28 22.93 -7.63 <-50 <-50
-8.07 0.000 14.84 0.03 0.104 4.07 22.91 -8.17 <-50 <-50
-6.98 0.000 15.82 0.04 0.106 5.00 22.80 -9.07 <-50 <-50
-6.08 0.000 16.78 0.05 0.108 6.12 22.86 -9.64 <-50 <-50
-5.09 0.000 17.72 0.06 0.110 7.46 22.81 -10.56 <-50 <-50
-4.00 0.000 18.66 0.07 0.112 9.11 22.66 -11.73 -36.97 <-50
-3.02 0.000 19.57 0.09 0.116 10.85 22.60 -12.22 -36.51 <-50
-2.07 0.001 20.48 0.11 0.120 12.93 22.56 -12.77 -36.16 <-50
-1.09 0.001 21.39 0.14 0.125 15.29 22.47 -13.53 -35.74 <-50
-0.10 0.001 22.25 0.17 0.132 17.67 22.35 -14.05 -35.05 <-50
0.91 0.001 23.14 0.21 0.139 20.57 22.23 -14.68 -34.47 <-50
1.89 0.002 23.97 0.25 0.150 23.12 22.08 -15.17 -34.25 <-50
2.90 0.002 24.83 0.30 0.160 26.40 21.93 -15.56 -33.48 <-50
3.89 0.002 25.70 0.37 0.173 29.81 21.81 -16.01 -33.05 <-50
4.88 0.003 26.56 0.45 0.187 33.61 21.68 -16.60 -32.90 <-50
5.91 0.004 27.44 0.55 0.204 37.72 21.53 -16.83 -32.64 <-50
6.90 0.005 28.31 0.68 0.224 41.99 21.41 -16.92 -32.21 <-50
7.90 0.006 29.15 0.82 0.245 46.56 21.25 -16.87 -32.09 <-50
8.88 0.008 29.90 0.98 0.266 50.99 21.02 -16.55 -32.27 <-50
9.88 0.010 30.55 1.14 0.287 54.98 20.68 -16.18 -32.23 <-50
10.88 0.012 31.07 1.28 0.305 58.26 20.19 -15.79 -32.35 -48.38
11.90 0.015 31.43 1.39 0.318 60.74 19.54 -14.47 -32.47 -48.06
12.91 0.020 31.67 1.47 0.327 62.44 18.76 -15.23 -32.62 -47.60
13.91 0.025 31.84 1.53 0.334 63.54 17.94 -14.60 -32.48 -47.40
14.92 0.031 31.97 1.57 0.338 64.67 17.05 -14.67 -32.49 -47.95
15.91 0.039 32.07 1.61 0.340 65.80 16.16 -14.70 -32.31 -48.05
16.91 0.049 32.16 1.64 0.343 66.52 15.24 -14.71 -32.10 -48.32
17.90 0.062 32.23 1.67 0.345 67.30 14.34 -14.61 -31.99 -48.07
18.90 0.078 32.30 1.70 0.345 68.30 13.40 -14.54 -31.97 -48.39
Idd ηdGainR.L.
armonicsHarmonics
Application Note for Silicon RF Power Semiconductors
7/10
RD01MUS1 RF Characteristics at Vdd=3.6/4.5V/7.2V
)
7. RD01MUS1 Pin-Po data (@f=527MHz, Vdd=7.2V)
Pin v s. Po , Ga i n & ηd
- AN-UHF-060 -A
35
30
25
Po
Gain
ηd
80
70
60
20
15
10
Po (dBm) , Gain (dB
5
50
40
30
20
ηd (%)
0
-10 -5 0 5 10 15 20
Pin ( d B m)
10
f= 527 (MHz)
Vdd= 7.2 (V)
Idq= 100 (mA)
Vgg= 2.579 (V)
PoPin
(dBm) (W) (dBm) (W) (A) (%) (dB) (dB) 2fo(dBc) 3fo(dBc)
-9.98 0.000 11.47 0.01 0.102 1.91 21.44 -3.49 <-50 <-50
-9.05 0.000 12.46 0.02 0.102 2.40 21.51 -4.33 <-50 <-50
-7.97 0.000 13.45 0.02 0.102 3.02 21.43 -4.71 <-50 <-50
-6.97 0.000 14.47 0.03 0.104 3.73 21.43 -5.08 -32.83 <-50
-6.04 0.000 15.46 0.04 0.104 4.70 21.50 -5.11 -32.43 <-50
-4.97 0.000 16.44 0.04 0.106 5.78 21.41 -5.26 -32.20 <-50
-3.98 0.000 17.43 0.06 0.108 7.12 21.41 -5.51 -31.40 <-50
-3.00 0.001 18.44 0.07 0.111 8.73 21.44 -5.68 -30.77 <-50
-1.97 0.001 19.45 0.09 0.113 10.83 21.42 -5.85 -29.81 <-50
-0.99 0.001 20.42 0.11 0.117 13.09 21.41 -6.02 -28.83 <-50
0.01 0.001 21.41 0.14 0.123 15.63 21.40 -6.23 -27.78 <-50
1.01 0.001 22.39 0.17 0.129 18.66 21.38 -6.48 -26.69 <-50
1.99 0.002 23.37 0.22 0.138 21.86 21.38 -6.75 -25.57 <-50
3.01 0.002 24.35 0.27 0.148 25.55 21.34 -7.05 -24.63 -39.89
4.03 0.003 25.31 0.34 0.161 29.31 21.28 -7.34 -23.84 -40.27
5.02 0.003 26.26 0.42 0.174 33.72 21.24 -6.87 -23.14 -39.40
6.01 0.004 27.17 0.52 0.190 38.07 21.16 -7.00 -22.60 -40.25
7.01 0.005 28.02 0.63 0.208 42.36 21.01 -7.00 -22.30 -39.93
8.03 0.006 28.82 0.76 0.225 47.01 20.78 -6.83 -21.97 -39.60
9.04 0.008 29.49 0.89 0.242 51.01 20.45 -6.62 -21.78 -39.13
10.04 0.010 30.05 1.01 0.258 54.46 20.01 -6.43 -21.73 -38.40
11.07 0.013 30.51 1.12 0.271 57.61 19.44 -6.41 -21.77 -37.49
12.08 0.016 30.86 1.22 0.282 60.04 18.78 -6.57 -21.78 -36.97
13.09 0.020 31.14 1.30 0.291 62.00 18.05 -6.89 -21.85 -36.49
14.10 0.026 31.36 1.37 0.299 63.47 17.26 -7.31 -21.90 -36.09
15.10 0.032 31.53 1.42 0.306 64.62 16.43 -7.73 -21.86 -35.45
16.09 0.041 31.68 1.47 0.312 65.53 15.59 -8.12 -21.91 -35.39
17.11 0.051 31.80 1.51 0.316 66.58 14.70 -8.47 -22.10 -35.26
18.11 0.065 31.91 1.55 0.321 67.16 13.80 -8.73 -22.15 -35.34
19.11 0.081 32.00 1.59 0.326 67.57 12.89 -8.90 -22.27 -35.22
Idd ηdGainR.L.
armonicsHarmonics
Application Note for Silicon RF Power Semiconductors
8/10
RD01MUS1 RF Characteristics at Vdd=3.6/4.5V/7.2V
- AN-UHF-060 -A
8. Matching circuit (@f=135MHz, Vdd=7.2V)
Vgg Vdd
RF-in
5.0mm
11.5mm
180pF
2.0mm
31pF
L:9Turns,D:0.43mm,φ2.46(the outside diameter)
Enameled wire(mm)
C1,C2:1000pF,0.022μF in parallel
7.0mm
7T
C1
18.0mm
W
4.7kΩ
5.0mm
4.0mm13.0mm
9T
270Ω
180pF
RD01MUS1
136MHz
Note:Board mater ial-glass epoxi substrate
micro strip line width=1.0mm/50Ω,εr:4.8,t=0.6mm
W：line width=1.0mm
14.0mm
L
9.0mm 11.5mm 1.5mm
C2
10μF,50V
W
3.5mm
88pF
19.5mm
7T
33pF
3.0mm
6pF
5.0mm
RF-ou t
250pF
Application Note for Silicon RF Power Semiconductors
9/10
RD01MUS1 RF Characteristics at Vdd=3.6/4.5V/7.2V
9. Matching circuit (@f=527MHz, Vdd=7.2V)
- AN-UHF-060 -A
Vgg
C1
19mm
4.7kOHM
RD01MUS1
RF-in
62pF
24pF
12mm
4.1mm
68 OHM
240pF
5mm
Note:Board material- Glass epoxy copper-clad laminates FR-4
Micro strip line width=1mm, er:4.8, t=0.6mm
527MHz
5.8mm
Vdd
C2
L=34.5nH
3.3mm
3pF
11mm
16.8mm
68pF
62pF
10pF
3mm
L:Enameled wire 5Turns, D:0.43mm, 2.46mm O.D
C1,C2:1000pF,0.022uF in parallel
RF-out
Application Note for Silicon RF Power Semiconductors
10/10
Loading...