MITSUBISHI AN-UHF-060-A User Manual

APPLICATION NOTE

Silicon RF Power Semiconductors

Document NO. AN-UHF-060-A
Date : 19
Rev.date : 22
Prepared : M.Wada, S.Kametani
Confirmed : T.Ohkawa
(Taking change of Silicon RF By
MIYOSHI Electronics)

SUBJECT: RD01MUS1 RF Characteristics at Vdd=3.6/ 4.5/ 7.2V

SUMMARY:

- Sample history:
Assembly Lot number : 3X2

th

Oct. 2004

th

June. 2010

- Sample quantity: RD01MUS1: 3 pieces

Pin-Po is one device data (#3).

- Evaluate conditions:

It is basic on following specifications

f=135MHz,Pin=30mW,Vdd=7.2V,Idq=100mA(Vgg adj.)
f=527MHz,Pin=30mW,Vdd=7.2V,Idq=100mA(Vgg adj.)

- Results: Page 2 shows RF data

Page 3-4 show Pin-Po data (@Vdd=3.6V)
Page 5-6 show Pin-Po data (@Vdd=4.5V)
Page 7-8 show Pin-Po data (@Vdd=7.2V)
Page 9-10 show matching circuit

Application Note for Silicon RF Power Semiconductors

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RD01MUS1 RF Characteristics at Vdd=3.6/4.5V/7.2V

- AN-UHF-060 -A

1. RD01MUS1 RF data

Conditons: f=135MHz, Vdd=7.2V, Idq=100mA Pin=30mW

S/N f Vdd Vgg Pin Pout Pout Gp ID(RF) ηd R.Loss

#1 135 3.6
#2 135
#3 135
#1 135 4.5
#2 135
#3 135
#1 135 7.2
#2 135
#3 135

(MHz) (V) (V) (W) (dBm) (W) (dB) (A) (%) (dB)

2.576

2.646

2.621

2.572

2.632

2.600

2.524

2.598

2.574

0.030 26.14 0.41 11.4 0.186 61.37

0.030 26.13 0.41 11.4 0.188 60.68

0.030 26.07 0.40 11.3 0.187 60.05

0.030 28.09 0.64 13.3 0.227 63.06

0.030 28.02 0.63 13.3 0.226 62.30

0.030 28.00 0.63 13.2 0.225 62.34

0.030 31.98 1.58 17.2 0.336 65.26

0.030 31.96 1.57 17.2 0.337 64.69

0.030 31.95 1.57 17.2 0.338 64.32

Conditons: f=527MHz, Vdd=7.2V, Idq=100mA Pin=30mW

S/N f Vdd Vgg Pin Pout Pout Gp ID(RF) ηd R.Loss

#1 527 3.6
#2 527
#3 527
#1 527 4.5
#2 527
#3 527
#1 527 7.2
#2 527
#3 527

(MHz) (V) (V) (W) (dBm) (W) (dB) (A) (%) (dB)

2.586

2.654

2.629

2.629

2.634

2.619

2.535

2.603

2.588

0.030 26.01 0.40 11.2 0.176 63.04

0.030 25.90 0.39 11.1 0.175 61.72

0.030 25.95 0.39 11.2 0.176 62.04

0.030 27.86 0.61 13.1 0.213 63.67

0.030 27.78 0.60 13.0 0.211 63.17

0.030 27.81 0.60 13.1 0.213 63.06

0.030 31.60 1.45 16.8 0.313 64.21

0.030 31.44 1.39 16.7 0.307 62.96

0.030 31.59 1.44 16.8 0.314 63.83

-16.19

-14.80

-16.03

-15.59

-14.60

-15.55

-14.90

-13.81

-14.52

-16.28

-12.66

-14.45

-16.00

-12.12

-12.54

-12.01

-11.54

-10.71

Application Note for Silicon RF Power Semiconductors

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RD01MUS1 RF Characteristics at Vdd=3.6/4.5V/7.2V

)

2. RD01MUS1 Pin-Po data (@f=135MHz, Vdd=3.6V)

- AN-UHF-060 -A

35

30

25

20

15

10

Po (dBm) , Gain (dB

Po

Gain

ηd

Pin v s. Po , Ga i n & ηd

80

70

60

50

40

30

ηd (%)

5

20

0

-10 -5 0 5 10 15 20

Pin ( d B m)

10

f= 135 (MHz)

Vdd= 3.6 (V)

Idq= 100 (mA)

Vgg= 2.61 (V)

PoPin

(dBm) (W) (dBm) (W) (A) (%) (dB) (dB) 2fo(dBc) 3fo(dBc)

-10.03 0.000 12.73 0.02 0.101 5.15 22.76 -6.00 <-50 <-50

-9.00 0.000 13.72 0.02 0.102 6.41 22.71 -7.07 <-50 <-50

-8.09 0.000 14.67 0.03 0.102 7.98 22.76 -7.56 <-50 <-50

-6.98 0.000 15.64 0.04 0.103 9.87 22.61 -8.31 <-50 <-50

-5.96 0.000 16.58 0.05 0.104 12.15 22.54 -9.06 <-50 <-50

-5.07 0.000 17.50 0.06 0.107 14.60 22.57 -9.50 <-50 <-50

-4.01 0.000 18.41 0.07 0.110 17.52 22.43 -10.15 <-50 <-50

-3.03 0.000 19.29 0.08 0.112 21.05 22.32 -10.51 -36.99 <-50

-2.05 0.001 20.14 0.10 0.117 24.52 22.19 -10.85 -37.17 <-50

-1.03 0.001 20.96 0.12 0.122 28.43 21.99 -11.10 -37.11 <-50

-0.09 0.001 21.73 0.15 0.127 32.56 21.82 -11.15 -36.05 <-50

0.94 0.001 22.47 0.18 0.133 36.87 21.53 -11.34 -36.22 <-50

1.91 0.002 23.12 0.21 0.141 40.44 21.21 -11.48 -36.42 <-50

2.91 0.002 23.71 0.24 0.148 44.15 20.80 -11.59 -35.20 <-50

3.93 0.002 24.23 0.26 0.154 47.72 20.30 -11.77 -35.54 <-50

4.92 0.003 24.64 0.29 0.161 50.24 19.72 -11.97 -35.23 <-50

5.96 0.004 24.98 0.31 0.167 52.39 19.02 -12.33 -35.30 <-50

6.97 0.005 25.24 0.33 0.171 54.28 18.27 -12.73 -35.36 <-50

7.99 0.006 25.44 0.35 0.176 55.22 17.45 -13.20 -35.73 <-50

8.99 0.008 25.59 0.36 0.179 56.24 16.60 -13.80 -35.71 -42.95

10.00 0.010 25.72 0.37 0.180 57.60 15.72 -14.39 -35.46 -43.04

11.02 0.013 25.83 0.38 0.183 58.05 14.81 -15.03 -35.77 <-50

12.02 0.016 25.92 0.39 0.184 58.94 13.89 -15.58 -35.56 -43.62

13.03 0.020 25.99 0.40 0.185 59.65 12.96 -16.06 -35.80 -43.44

14.02 0.025 26.06 0.40 0.186 60.21 12.04 -16.38 -36.03 <-50

15.03 0.032 26.11 0.41 0.187 60.69 11.08 -15.84 -35.77 -43.33

16.02 0.040 26.16 0.41 0.186 61.72 10.14 -15.84 -35.66 -44.12

17.01 0.050 26.21 0.42 0.186 62.39 9.20 -15.75 -34.86 <-50

18.00 0.063 26.25 0.42 0.186 63.00 8.25 -15.60 -35.19 -44.23

19.02 0.080 26.29 0.43 0.188 62.92 7.27 -15.39 -34.75 -43.85

Idd ηdGainR.L.

armonicsHarmonics

Application Note for Silicon RF Power Semiconductors

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