MITSUBISHI AN-UHF-049 User Manual
APPLICATION NOTE
SUBJECT: RD70HUF2 single-stage amplifier with f=135-175MHz evaluation board
Features:
- The evaluation board for RD70HUF2
- Frequency: 135-175MHz
- Typical input power: 4W
- Typical output power: 80W
- Quiescent current: Total is 1000mA, 500mA per one FET chip
Silicon RF Power Semiconductors
Document NO. AN-VHF-049
Date : 27thMay 2011
Prepared : E.Akiyama
K.Mori
Confirmed : T.Okawa
(Taking charge of Silicon RF by
MIYOSHI Electronics)
- Operating current: approx. 10A
- Surface-mounted RF power amplifier structure
Gate Bias 1
(Vgg1)
RF IN RF OUT
Gate Bias 2
(Vgg2)
Drain Bias
PCB L=75mm W=46mm
Application Note for Silicon RF Power Semiconductors
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RD70HUF2 single-stage amplifier with f=135-to-175MHz evaluation board
Contents
1. Equivalent Circuitry ------------------------------------------------------------
2. PCB Layout -----------------------------------------------------------------------
3. Standard Land Pattern Dimensions --------------------------------------
4. Component List and Standard Deliverable ----------------------------------------
5. Thermal Design of Heat Sink ------------------------------------------------
6. Typical RF Characteristics ---------------------------------------------------6-1. Frequency vs. -----------------------------------------------------------6-2. RF Power vs. ------------------------------------------------------------6-3. Drain Quiescent Current vs. ---------------------------------------6-4. DC Power Supply vs. -------------------------------------------------
- AN-VHF-049-
Page
3
4
6
7
8
9
9
10
14
15
Application Note for Silicon RF Power Semiconductors
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RD70HUF2 single-stage amplifier with f=135-to-175MHz evaluation board
1. Equivalent Circuitry
- AN-VHF-049-
Application Note for Silicon RF Power Semiconductors
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2. PCB Layout
12n
12n
390 p
390 p
0.1u
0.1u
5.6K
5.6K
220p
220p
6.6n
6.6n
TOP VIEW (Layer 1)
RD70HUF2 single-stage amplifier with f=135-to-175MHz evaluation board
- AN-VHF-049-
BOARD OUTLINE: 75.0*46.0(mm)
0ohm
0ohm
330 p
56p
56p
BOTTOM VIEW (Layer 4), Perspective through Top View
8004C
330 p
3.9p
3.9p
8.2p
15p
68p
68p
68p
68p
68p
68p
8002C
56p
22p 8003C
3.9p
3.9p
3.9p
3.9p
130p
5.6oh m*2
130p
1.5n
1.5n
130p
5.6oh m*2
130p
47p
Application Note for Silicon RF Power Semiconductors
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RD70HUF2 single-stage amplifier with f=135-to-175MHz evaluation board
Internal Layer (Layer 2) , Perspective Through Top View
- AN-VHF-049-
BOARD OUTLINE: 75.0*46.0(mm)
Internal Layer (Layer 3) , Perspective Through Top View
Substrate Condition
Nomial TotalCompletedThickness (included resist coating): 1.6mm
Layer1 ( CopperT: 43um withGold Plating)
200um
Prepreg
Layer2 (Copper T:35um)
930um
200um
Core
Prepreg
Er: 4.7 @ 1GHz
TanD:0.018@ 1GHz
Layer3 (Copper T:35um)
Layer4 ( CopperT: 43um withGold Plating)
Material: MCL-E-679G(R), Hitachi Chemical Co.
Application Note for Silicon RF Power Semiconductors
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