APPLICATION NOTE
SUBJECT: RD70HUF2 single-stage amplifier with f=135-175MHz evaluation board
Features:
- The evaluation board for RD70HUF2
- Frequency: 135-175MHz
- Typical input power: 4W
- Typical output power: 80W
- Quiescent current: Total is 1000mA, 500mA per one FET chip
Silicon RF Power Semiconductors
Document NO. AN-VHF-049
Date : 27thMay 2011
Prepared : E.Akiyama
K.Mori
Confirmed : T.Okawa
(Taking charge of Silicon RF by
MIYOSHI Electronics)
- Operating current: approx. 10A
- Surface-mounted RF power amplifier structure
Gate Bias 1
(Vgg1)
RF IN RF OUT
Gate Bias 2
(Vgg2)
Drain Bias
PCB L=75mm W=46mm
Application Note for Silicon RF Power Semiconductors
1/16
RD70HUF2 single-stage amplifier with f=135-to-175MHz evaluation board
Contents
1. Equivalent Circuitry ------------------------------------------------------------
2. PCB Layout -----------------------------------------------------------------------
3. Standard Land Pattern Dimensions --------------------------------------
4. Component List and Standard Deliverable ----------------------------------------
5. Thermal Design of Heat Sink ------------------------------------------------
6. Typical RF Characteristics ---------------------------------------------------6-1. Frequency vs. -----------------------------------------------------------6-2. RF Power vs. ------------------------------------------------------------6-3. Drain Quiescent Current vs. ---------------------------------------6-4. DC Power Supply vs. -------------------------------------------------
- AN-VHF-049-
Page
3
4
6
7
8
9
9
10
14
15
Application Note for Silicon RF Power Semiconductors
2/16
RD70HUF2 single-stage amplifier with f=135-to-175MHz evaluation board
1. Equivalent Circuitry
- AN-VHF-049-
Application Note for Silicon RF Power Semiconductors
3/16
2. PCB Layout
12n
12n
390 p
390 p
0.1u
0.1u
5.6K
5.6K
220p
220p
6.6n
6.6n
TOP VIEW (Layer 1)
RD70HUF2 single-stage amplifier with f=135-to-175MHz evaluation board
- AN-VHF-049-
BOARD OUTLINE: 75.0*46.0(mm)
0ohm
0ohm
330 p
56p
56p
BOTTOM VIEW (Layer 4), Perspective through Top View
8004C
330 p
3.9p
3.9p
8.2p
15p
68p
68p
68p
68p
68p
68p
8002C
56p
22p 8003C
3.9p
3.9p
3.9p
3.9p
130p
5.6oh m*2
130p
1.5n
1.5n
130p
5.6oh m*2
130p
47p
Application Note for Silicon RF Power Semiconductors
4/16
RD70HUF2 single-stage amplifier with f=135-to-175MHz evaluation board
Internal Layer (Layer 2) , Perspective Through Top View
- AN-VHF-049-
BOARD OUTLINE: 75.0*46.0(mm)
Internal Layer (Layer 3) , Perspective Through Top View
Substrate Condition
Nomial TotalCompletedThickness (included resist coating): 1.6mm
Layer1 ( CopperT: 43um withGold Plating)
200um
Prepreg
Layer2 (Copper T:35um)
930um
200um
Core
Prepreg
Er: 4.7 @ 1GHz
TanD:0.018@ 1GHz
Layer3 (Copper T:35um)
Layer4 ( CopperT: 43um withGold Plating)
Material: MCL-E-679G(R), Hitachi Chemical Co.
Application Note for Silicon RF Power Semiconductors
5/16
RD70HUF2 single-stage amplifier with f=135-to-175MHz evaluation board
3. Standard Land Pattern Dimensions
=
.
a
i
D
8.3
- AN-VHF-049-
6.52.8 13.54.9 3.5
9
.
4
3.3
3.8
3.2
1.2
18.0
19.7
23.4 25.4
4.1
UNIT: mm
Application Note for Silicon RF Power Semiconductors
6/16
RD70HUF2 single-stage amplifier with f=135-to-175MHz evaluation board
Diameter: Wire=0.2mm Inside=1.4mm
T/N of coils=2
1
YC CORPORATION Co.,Ltd.
Diameter: Wire=0.8mm Inside=2.2mm
T/N of coils=2
1
YC CORPORATION Co.,Ltd.
Diameter: Wire=0.8mm Inside=2.2mm
T/N of coils=3
1
YC CORPORATION Co.,Ltd.
- AN-VHF-049-
4. Component List
- Component List
No. Description P/N Qty Manufacturer
Tr MOSFET RD70HUF2 1 Mitsubishi Electric Corporation
C 1 300 pF 3216 200V GRM31M2C2D331JY21B 1 MURATA MANUFACTURING CO.
C 2 56 pF 1608 Hi-Q 50V GQM1882C1H560JB01 1 MURATA MANUFACTURING CO.
C 3 56 pF 1608 Hi-Q 50V GQM1882C1H560JB01 1 MURATA MANUFACTURING CO.
C 5 220 pF 1608 50V GRM1882C1H221JA01 1 MURATA MANUFACTURING CO.
C 6 220 pF 1608 50V GRM1882C1H221JA01 1 MURATA MANUFACTURING CO.
C 7 1500 pF 1608 50V GRM1882C1H152JA01 1 MURATA MANUFACTURING CO.
C 8 1500 pF 1608 50V GRM1882C1H152JA01 1 MURATA MANUFACTURING CO.
C 9 130 pF 2012 100V GRM2162C2A131JA01 1 MURATA MANUFACTURING CO.
C 10 130 pF 2012 100V GRM2162C2A131JA01 1 MURATA MANUFACTURING CO.
C 11 130 pF 2012 100V GRM2162C2A131JA01 1 MURATA MANUFACTURING CO.
C 12 130 pF 2012 100V GRM2162C2A131JA01 1 MURATA MANUFACTURING CO.
C 13 0.1 uF 1608 16V GRM188B11C104KA01 1 MURATA MANUFACTURING CO.
C 14 0.1 uF 1608 16V GRM188B11C104KA01 1 MURATA MANUFACTURING CO.
C 15 47 pF 2012 Hi-Q 50V GQM2192C1H470JB01 1 MURATA MANUFACTURING CO.
C 16 68 pF 2012 Hi-Q 50V GQM2192C1H680JB01 1 MURATA MANUFACTURING CO.
C 17 68 pF 2012 Hi-Q 50V GQM2192C1H680JB01 1 MURATA MANUFACTURING CO.
C 18 68 pF 2012 Hi-Q 50V GQM2192C1H680JB01 1 MURATA MANUFACTURING CO.
C 19 68 pF 2012 Hi-Q 50V GQM2192C1H680JB01 1 MURATA MANUFACTURING CO.
C 20 68 pF 2012 Hi-Q 50V GQM2192C1H680JB01 1 MURATA MANUFACTURING CO.
C 21 68 pF 2012 Hi-Q 50V GQM2192C1H680JB01 1 MURATA MANUFACTURING CO.
C 22 15 pF 2012 Hi-Q 100V GQM2192C2A150JB01 1 MURATA MANUFACTURING CO.
C 23 8.2 pF 2012 Hi-Q 100V GQM2192C2A8R2DB01 1 MURATA MANUFACTURING CO.
C 25 56 pF 2012 Hi-Q 50V GQM2192C1H560JB01 1 MURATA MANUFACTURING CO.
C 26 22 pF 2012 Hi-Q 50V GQM2192C1H220JB01 1 MURATA MANUFACTURING CO.
C 27 3.9 pF 2012 Hi-Q 100V GQM2193C2A3R9CB01 1 MURATA MANUFACTURING CO.
C 28 3.9 pF 2012 Hi-Q 100V GQM2193C2A3R9CB01 1 MURATA MANUFACTURING CO.
C 29 3.9 pF 2012 Hi-Q 100V GQM2193C2A3R9CB01 1 MURATA MANUFACTURING CO.
C 30 3.9 pF 2012 Hi-Q 100V GQM2193C2A3R9CB01 1 MURATA MANUFACTURING CO.
C 31 3.9 pF 2012 Hi-Q 100V GQM2193C2A3R9CB01 1 MURATA MANUFACTURING CO.
C 32 3.9 pF 2012 Hi-Q 100V GQM2193C2A3R9CB01 1 MURATA MANUFACTURING CO.
C 33 330 pF 3216 200V GRM31M2C2D331JY21B 1 MURATA MANUFACTURING CO.
C 34 390 pF 3216 200V GRM31M2C2D391JY21B 1 MURATA MANUFACTURING CO.
C 35 390 pF 3216 200V GRM31M2C2D391JY21B 1 MURATA MANUFACTURING CO.
C 36 220 uF 35V EEUFC1V221 1 Panasonic Corporation
L 1 12 nH 1608 LQG18HH12N00 1 MURATA MANUFACTURING CO.
L 2 12 nH 1608 LQG18HH12N00 1 MURATA MANUFACTURING CO.
L 3 8 nH *
L 4 8 nH * Diameter: Wire=0.2mm Inside=1.4mm T/N of coils=2 1 YC CORPORATION Co.,Ltd.
L 5 8 nH *
L 6 12 nH *
L 7 17 nH * Diameter: Wire=0.8mm Inside=2.2mm T/N of coils=4 1 YC CORPORATION Co.,Ltd.
R 1 5.6 ohm 2012 RPC10T5R6J 1 TAIYOSHA ELECTRIC CO.
R 2 5.6 ohm 2012 RPC10T5R6J 1 TAIYOSHA ELECTRIC CO.
R 3 5.6 ohm 2012 RPC10T5R6J 1 TAIYOSHA ELECTRIC CO.
R 4 5.6 ohm 1608 RPC10T5R6J 1 TAIYOSHA ELECTRIC CO.
R 5 5.6k ohm 1608 RPC05T562J 1 TAIYOSHA ELECTRIC CO.
R 6 5.6k ohm 1608 RPC05T562J 1 TAIYOSHA ELECTRIC CO.
R 7 0 ohm 1608 RPC05T0R0 1 TAIYOSHA ELECTRIC CO.
R 8 0 ohm 1608 RPC05T0R0 1 TAIYOSHA ELECTRIC CO.
Pb PCB MS3A0194 1 Homebuilt
Rc SMA female connector PAF-S00-002 2 GIGALANE Corporation
Bc 1 Bias connector red color TM-605R 3 MSK Corporation
Bc 2 Bias connector black color TM-605B 1 MSK Corporation
Pe Aluminum pedestal 1 Homebuilt
Pd Thermal Silicon Compound G746 - Shin-Etsu Chemical Co.,Ltd
Sbc Support of bias connectors 2 Homebuilt
Conductiong wire 4 Homebuilt
Screw M3 10 Screw M2.6 4 Screw M2 4 * Inductor of Rolling Coil measurement condition : f=100MHz
Application Note for Silicon RF Power Semiconductors
7/16
RD70HUF2 single-stage amplifier with f=135-to-175MHz evaluation board
- Standard Deliverable
TYPE1 Evaluation Board assembled with all the component including the option
TYPE2 PCB (raw board)
5. Thermal Design of Heat Sink
- AN-VHF-049-
M3 Screw
M3 Screw
Pb
Tr
Junction point of MOSFET chip
Pd
R
Pe
th(ch-Pe bottom)=Rth(ch-case)+Rth(case-Pe bottom)
Thermally connect
Heat Sink
Tch
Also, operating Tj(“Tj
Therefore T
T
Pe bottom-air
*: an instance assuming high temperature of standard ambient conditions is 60 deg. C.
=(Pout/Efficiency-Pout+Pin) x R
(delta)
”)=140 (deg. C.), in case of RD series that Tch
(op)
Pe bottom-air
=“Tj
(op)
as delta temperature between Pe bottom and ambient 60 deg. C.* is
” - Tch
(delta)
- Ta
(60deg.C.)
th(ch-Pe bottom)
=(65W/55%-65W+5.5) x 0.48=28.2 (deg. C.)
=140-28.2-60=51.8 (deg. C.)
(max)
(in this package)
=0.48 (deg. C./W)
=175 (deg. C.)
In terms of long-term reliability, “Tj
” has to be kept less than 140 deg. C. i.e. T
(op)
Pe bottom-air
has
to be less than 51.8 deg. C..
The thermal resistance of the heat sink to border it:
Rth
(Pe bottom-air)=TPe bottom-air
/(Pout/Efficiency-Pout+Pin)=51.8/(65W/55%-65W+5.5)=0.88 (deg. C./W)
Therefore
it is preferable that the thermal resistance of the heat sink is much smaller than 0.88 deg. C./W.
For assembly method including relevant precaution, refer to AN-GEN-070
Application Note for Silicon RF Power Semiconductors
8/16
RD70HUF2 single-stage amplifier with f=135-to-175MHz evaluation board
- AN-VHF-049-
6. Typical RF Characteristics
6-1. Frequency vs.
OUTPUT POWER, POWER GAIN, DRAIN EFFICIENCY, DRAIN CURRENT and INPUT RETURN LOSS
Ta=+25deg.C
Vds=12.5V, Idq=Total 1A/One-side 0.5A, Pin=4W
100
90
Pout
80
20
18
16
Ta=+25deg.C
Vds=12.5V, Idq=Total 1A/One-side 0.5A, Pin=4W
50
Pout
40
Idd
20
10
70
60
Pout(W) , Drain Effi(%)
50
40
130 135 140 145 150 155 160 165 170 175 180
ηD
Gp
f (MHz)
14
12
10
8
30
Gp(dB)
Pout(dBm)
20
10
130 135 140 145 150 155 160 165 170 175 180
I.R.L.
f (MHz)
Ta=+25deg. C., Vds=12.5V, Idq=Total 1.0A/One-side 0.5A, Pin=4.0W
Freq. Vgg1 Vgg2 Gp ID(RF) ηadd ηD I.R.L.
Pin Pout
(MHz) (V) (V) (dBm) (W) (dBm) (W) (dB) (A) (%) (%) (dB)
130 2.75 2.74
36.0 4.0 49.2 82.4
13.1 10.81 58.0 61.0 -8.5
135 2.75 2.74 36.0 4.0 49.2 83.1 13.2 10.09 62.7 65.9 -10.4
140 2.75 2.74 36.0 4.0 49.2 83.8 13.2 9.50 67.2 70.6 -11.5
145 2.74 2.74 36.0 4.0 49.2 83.0 13.2 8.99 70.3 73.9 -12.2
150 2.74 2.74 36.1 4.0 49.1 81.4 13.1 8.64 71.7 75.4 -12.8
155 2.75 2.75 36.0 4.0 49.1 80.4 13.0 8.50 71.9 75.6 -13.4
160 2.75 2.75 36.0 4.0 49.1 80.8 13.0 8.56 71.8 75.5 -13.3
165 2.75 2.75 36.0 4.0 49.1 81.9 13.1 8.70 71.6 75.3 -12.2
170 2.75 2.75 36.0 4.0 49.2 83.0 13.2 8.86 71.4 74.9 -10.5
175 2.75 2.74 36.0 4.0 49.2 83.9 13.2 8.97 71.2 74.8 -8.6
180 2.75 2.74 36.0 4.0 49.2 82.3 13.1 8.94 70.1 73.7 -7.1
0
-10
-20
Input R. L. (dB) , Idd(A)
Application Note for Silicon RF Power Semiconductors
9/16
6-2. RF Power vs.
175MHz
175MHz
RD70HUF2 single-stage amplifier with f=135-to-175MHz evaluation board
- AN-VHF-049-
INPUT POWER
Ta=+25deg.C,Vds=12.5V,Idq=Total1.0A/One-side 0.5A
100
80
60
155MHz
40
20
Pout , OUTPUT POWER(W)
0
0 2 4 6 8
Pin, INPUT POWER(W)
Ta=+25deg.C,Vds=12.5V,Idq=Total1.0A/One-side 0.5A
21
20
135MHz
POWER GAIN
Ta=+25deg.C,Vds=12.5V,Idq=Total1.0A/One-side 0.5A
50
45
135MHz
155MHz
40
35
Pout , OUTPUT POWER(dBm)
30
10 20 30 40
Pin, INPUT POWER(dBm)
Ta=+25deg.C,Vds=12.5V,Idq=Total1.0A/One-side0.5A
21
20
135MHz
19
18
17
16
15
14
Gp, POWER GAIN(dB)
13
12
11
175MHz
155MHz
0 20 40 60 80 100
Pout, OUTPUT POWER(W)
135MHz
19
18
17
16
15
14
Gp, POWER GAIN(dB)
13
12
11
30 40 50
Pout, OUTPUT POWER(dBm)
175MHz
155MHz
Application Note for Silicon RF Power Semiconductors
10/16
RD70HUF2 single-stage amplifier with f=135-to-175MHz evaluation board
DRAIN EFFICIENCY
Ta=+25deg.C,Vds=12.5V, Idq=Total1.0A/One-side 0.5A
- AN-VHF-049-
Ta=+25deg.C,Vds=12.5V,Idq=Total1.0A/One-side 0.5A
80
70
175MHz
155MHz
60
50
135MHz
40
30
ηD, DRAIN EFFICIENCY(%)
20
10
0 20 40 60 80 100
Pout, OUTPUT POWER(W)
Ta=+25deg.C,Vds=12.5V, Idq=Total1.0A/One-side 0.5A
12
80
70
60
50
40
30
ηD, DRAIN EFFICIENCY(%)
20
10
DRAIN CURRENT
12
175MHz
155MHz
135MHz
30 40 50
Pout, OUTPUT POWER(dBm)
Ta=+25deg.C,Vds=12.5V,Idq=Total1.0A/One-side 0.5A
10
8
135MHz
175MHz
6
155MHz
4
Idd, DRAIN CURRENT(A)
2
0
0 20 40 60 80 100
Pout, OUTPUT POWER(W)
10
135MHz
8
175MHz
6
4
155MHz
Idd, DRAIN CURRENT(A)
2
0
30 40 50
Pout, OUTPUT POWER(dBm)
Application Note for Silicon RF Power Semiconductors
11/16
RD70HUF2 single-stage amplifier with f=135-to-175MHz evaluation board
- AN-VHF-049-
INPUT RETURN LOSS
Ta=+25deg.C,Vds=12.5V, Idq=Total1.0A/One-side 0.5A
0
-5
175MHz
-10
135MHz
-15
I.R.L., INPUT RETURN LOSS (dB)
155MHz
-20
0 20 40 60 80 100
Pout, OUTPUT POWER(W)
Ta=+25deg. C., Vds=12.5V, Idq=Total 1.0A/One-side 0.5A
135MHz
Vgg1 Vgg2 Gp ID(RF) ηadd ηD I.R.L.
(V) (V) (dBm) (W) (dBm) (W) (dB) (A) (%) (%) (dB)
2.73 2.73 10.0 0.01 28.9 0.8 18.9 1.23 5.0 5.1 -10.7
2.73 2.73 11.0 0.01 29.9 1.0 18.9 1.31 5.9 6.0 -10.8
2.73 2.73 12.0 0.02 30.9 1.2 18.8 1.41 6.9 6.9 -10.9
2.73 2.73 13.0 0.02 31.9 1.5 18.8 1.52 8.0 8.1 -11.0
2.73 2.73 14.0 0.03 32.9 1.9 18.8 1.67 9.1 9.2 -11.0
2.73 2.73 15.0 0.03 33.9 2.4 18.9 1.83 10.5 10.6 -11.0
2.73 2.73 16.0 0.04 34.9 3.1 18.9 2.03 11.9 12.1 -11.0
2.73 2.73 17.0 0.05 35.9 3.9 18.9 2.26 13.6 13.7 -11.0
2.73 2.73 18.0 0.06 36.9 4.9 18.9 2.53 15.4 15.6 -11.0
2.73 2.73 19.0 0.08 38.0 6.3 19.0 2.84 17.6 17.8 -10.9
2.73 2.73 20.0 0.10 39.0 8.0 19.0 3.18 19.9 20.1 -10.8
2.73 2.73 21.0 0.13 40.1 10.2 19.1 3.58 22.5 22.8 -10.8
2.73 2.73 22.0 0.16 41.1 12.9 19.1 4.01 25.4 25.7 -10.7
2.73 2.73 23.0 0.20 42.2 16.6 19.2 4.54 28.8 29.2 -10.6
2.73 2.73 24.0 0.25 43.2 20.8 19.2 5.08 32.3 32.7 -10.4
2.73 2.73 25.0 0.31 44.1 25.7 19.1 5.65 36.0 36.4 -10.2
2.73 2.73 26.0 0.39 45.0 31.4 19.0 6.24 39.8 40.3 -10.0
2.73 2.73 27.0 0.51 45.8 38.4 18.8 6.90 44.0 44.6 -9.9
2.73 2.73 28.0 0.63 46.5 44.9 18.5 7.45 47.5 48.2 -9.8
2.73 2.73 29.0 0.80 47.1 51.0 18.1 7.93 50.7 51.5 -9.8
2.73 2.73 30.0 1.00 47.5 56.8 17.5 8.35 53.4 54.4 -9.8
2.73 2.73 31.0 1.26 47.9 62.1 16.9 8.72 55.8 57.0 -9.9
2.73 2.73 32.0 1.59 48.3 67.0 16.2 9.04 57.9 59.3 -10.0
2.73 2.73 33.0 2.01 48.5 71.6 15.5 9.34 59.6 61.3 -10.1
2.73 2.73 34.0 2.52 48.8 75.8 14.8 9.61 61.0 63.1 -10.2
2.73 2.73 35.0 3.17 49.0 79.4 14.0 9.84 62.0 64.6 -10.3
2.73 2.73 36.0 3.96 49.2 82.6 13.2 10.04 62.6 65.8 -10.4
2.73 2.73 37.0 5.02 49.3 85.3 12.3 10.22 62.9 66.8 -10.5
2.73 2.73 38.0 6.35 49.4 87.8 11.4 10.39 62.8 67.6 -10.6
2.73 2.73 39.0 7.97 49.5 89.7 10.5 10.51 62.2 68.3 -10.6
2.73 2.73 40.0 10.09 49.6 91.2 9.6 10.61 61.2 68.8 -10.6
Pin Pout
Ta=+25deg.C,Vds=12.5V,Idq=Total1.0A/One-side 0.5A
0
-5
175MHz
-10
135MHz
-15
155MHz
I.R.L., INPUT RETURN LOSS (dB)
-20
30 40 50
Pout, OUTPUT POWER(dBm)
Application Note for Silicon RF Power Semiconductors
12/16
RD70HUF2 single-stage amplifier with f=135-to-175MHz evaluation board
- AN-VHF-049-
155MHz
Vgg1 Vgg2 Gp ID(RF) ηadd ηD I.R.L.
(V) (V) (dBm) (W) (dBm) (W) (dB) (A) (%) (%) (dB)
2.73 2.74 10.0 0.01 28.9 0.8 18.9 1.20 5.1 5.2 -13.1
2.73 2.74 11.0 0.01 29.9 1.0 18.9 1.25 6.1 6.2 -13.4
2.73 2.74 12.0 0.02 30.9 1.2 18.8 1.32 7.3 7.4 -13.2
2.73 2.74 13.0 0.02 31.9 1.5 18.8 1.40 8.6 8.8 -13.4
2.73 2.74 14.0 0.03 32.8 1.9 18.8 1.50 10.1 10.3 -13.5
2.73 2.74 15.0 0.03 33.8 2.4 18.8 1.62 11.8 11.9 -13.6
2.73 2.74 16.0 0.04 34.8 3.0 18.8 1.77 13.6 13.8 -13.7
2.73 2.74 17.0 0.05 35.9 3.9 18.8 1.94 15.7 15.9 -13.8
2.73 2.74 18.0 0.06 36.9 4.9 18.9 2.15 18.0 18.2 -13.9
2.73 2.74 19.0 0.08 37.9 6.2 18.9 2.39 20.5 20.8 -14.1
2.73 2.74 20.0 0.10 39.0 7.9 18.9 2.67 23.4 23.7 -14.2
2.73 2.74 21.0 0.13 40.0 10.0 19.0 2.98 26.5 26.8 -14.3
2.73 2.74 22.0 0.16 41.1 12.8 19.0 3.35 30.1 30.5 -14.5
2.73 2.74 23.0 0.20 42.1 16.2 19.1 3.76 34.1 34.5 -14.7
2.73 2.74 24.0 0.25 43.1 20.5 19.1 4.22 38.4 38.9 -14.9
2.73 2.74 25.0 0.32 44.1 25.4 19.1 4.69 42.8 43.4 -15.2
2.73 2.74 26.0 0.40 45.0 31.4 19.0 5.21 47.6 48.2 -15.5
2.73 2.74 27.0 0.50 45.8 37.9 18.8 5.73 52.3 53.0 -15.8
2.73 2.74 28.0 0.63 46.5 44.7 18.5 6.22 56.7 57.5 -15.9
2.73 2.74 29.0 0.80 47.1 51.3 18.1 6.67 60.7 61.6 -15.8
2.73 2.74 30.0 1.00 47.6 57.3 17.6 7.05 63.9 65.1 -15.5
2.73 2.74 31.0 1.26 48.0 62.8 17.0 7.39 66.6 68.0 -15.2
2.73 2.74 32.0 1.59 48.3 67.4 16.3 7.68 68.6 70.2 -14.7
2.73 2.74 33.0 2.00 48.5 71.1 15.5 7.92 69.9 71.9 -14.3
2.73 2.74 34.0 2.52 48.7 74.6 14.7 8.13 70.9 73.3 -13.9
2.73 2.74 35.0 3.16 48.9 77.2 13.9 8.31 71.3 74.4 -13.6
2.73 2.74 36.0 3.99 49.0 79.7 13.0 8.46 71.6 75.3 -13.3
2.73 2.74 37.0 5.03 49.1 81.9 12.1 8.61 71.5 76.2 -13.0
2.73 2.74 38.0 6.35 49.2 83.8 11.2 8.73 71.0 76.8 -12.6
2.73 2.74 39.0 7.95 49.3 85.5 10.3 8.84 70.2 77.4 -12.1
2.73 2.74 40.0 10.02 49.4 87.1 9.4 8.94 69.0 77.9 -11.1
Pin Pout
175MHz
Vgg1 Vgg2 Gp ID(RF) ηadd ηD I.R.L.
(V) (V) (dBm) (W) (dBm) (W) (dB) (A) (%) (%) (dB)
2.73 2.74 10.0 0.01 27.1 0.5 17.0 1.14 3.5 3.6 -7.3
2.73 2.74 11.0 0.01 28.0 0.6 17.0 1.18 4.2 4.3 -7.4
2.73 2.73 12.0 0.02 29.0 0.8 17.0 1.23 5.1 5.2 -7.5
2.73 2.74 13.0 0.02 30.0 1.0 17.0 1.29 6.1 6.3 -7.5
2.73 2.74 14.0 0.03 31.0 1.3 17.0 1.37 7.3 7.4 -7.6
2.73 2.74 15.0 0.03 32.1 1.6 17.0 1.46 8.6 8.8 -7.6
2.73 2.74 16.0 0.04 33.1 2.0 17.0 1.57 10.1 10.3 -7.6
2.73 2.74 17.0 0.05 34.1 2.6 17.1 1.71 11.7 12.0 -7.7
2.73 2.74 18.0 0.06 35.1 3.2 17.1 1.88 13.6 13.9 -7.7
2.73 2.74 19.0 0.08 36.1 4.1 17.1 2.07 15.6 15.9 -7.7
2.73 2.74 20.0 0.10 37.1 5.2 17.1 2.28 17.8 18.1 -7.7
2.73 2.74 21.0 0.13 38.2 6.6 17.2 2.55 20.3 20.7 -7.7
2.73 2.74 22.0 0.16 39.3 8.4 17.2 2.85 23.2 23.6 -7.7
2.73 2.74 23.0 0.20 40.3 10.7 17.3 3.20 26.4 26.9 -7.7
2.73 2.74 24.0 0.25 41.3 13.6 17.3 3.58 29.8 30.4 -7.7
2.73 2.74 25.0 0.32 42.4 17.3 17.4 4.02 33.7 34.4 -7.6
2.73 2.74 26.0 0.40 43.4 21.9 17.4 4.52 38.1 38.8 -7.6
2.73 2.74 27.0 0.50 44.4 27.5 17.4 5.06 42.6 43.4 -7.6
2.73 2.74 28.0 0.63 45.3 33.8 17.3 5.62 47.2 48.1 -7.6
2.73 2.74 29.0 0.79 46.1 40.9 17.1 6.20 51.8 52.8 -7.6
2.73 2.73 30.0 1.00 46.8 48.4 16.8 6.76 56.1 57.3 -7.7
2.73 2.73 31.0 1.26 47.5 55.7 16.5 7.26 60.0 61.4 -7.8
2.73 2.73 32.0 1.59 48.0 62.6 16.0 7.71 63.4 65.0 -8.0
2.73 2.73 33.0 2.00 48.4 69.0 15.4 8.10 66.2 68.2 -8.1
2.73 2.73 34.0 2.51 48.7 74.7 14.7 8.43 68.5 70.8 -8.3
2.73 2.73 35.0 3.17 49.0 79.5 14.0 8.72 70.0 72.9 -8.5
2.73 2.73 36.0 3.99 49.2 83.3 13.2 8.95 70.9 74.4 -8.6
2.73 2.73 37.0 5.04 49.4 86.2 12.3 9.13 71.1 75.5 -8.8
2.73 2.73 38.0 6.32 49.5 88.5 11.5 9.28 70.9 76.3 -8.9
2.73 2.73 39.0 7.97 49.6 90.5 10.6 9.40 70.2 77.0 -9.1
2.73 2.73 40.0 10.04 49.7 92.4 9.6 9.52 69.2 77.6 -9.2
Pin Pout
Application Note for Silicon RF Power Semiconductors
13/16
RD70HUF2 single-stage amplifier with f=135-to-175MHz evaluation board
6-3. Drain Quiescent Current vs.
OUTPUT POWER and DRAIN EFFICIENCY
Pin=4W
Ta=+25deg.C,Vds=12.5V
90
175MHz
- AN-VHF-049-
Pin=4W
Ta=+25deg.C,Vds=12.5V
80
155MHz
80
70
175MHz
155MHz
135MHz
135MHz
70
Pout , OUTPUT POWER(W)
60
400 600 800 1000 1200 1400 1600
Idq, DRAIN QUIESCENT CURRENT(mA)
60
ηD, DRAIN EFFICIENCY (%)
50
400 600 800 1000 1200 1400 1600
Idq, DRAIN QUIESCENT CURRENT(mA)
Ta=+25deg. C., Vds=12.5V, Pin=4.0W
135MHz Vgg1 Vgg2 Total Idq Pin Pout Idd ηD ηadd Gain I.R.L.
(V) (V) (mA) (dBm) (W) (dBm) (W) (A) (%) (%) (dB) (dB)
2.60 2.60 400 36.0 4.0 49.0 77.1 9.26 66.6 63.2 12.9 -10.4
2.64 2.65 600 36.0 4.0 49.0 79.1 9.41 67.3 63.9 12.9 -10.4
2.68 2.69 800 36.1 4.0 49.1 80.6 9.53 67.6 64.3 13.0 -10.4
2.73 2.73 1000 36.1 4.0 49.2 82.3 9.65 68.2 64.9 13.1 -10.4
2.76 2.76 1200 36.1 4.0 49.3 81.9 9.64 67.9 64.6 13.1 -10.4
2.79 2.79 1400 36.1 4.0 49.3 82.6 9.70 68.1 64.8 13.2 -10.4
2.81 2.81 1600 36.0 4.0 49.3 83.0 9.74 68.2 64.9 13.2 -10.3
155MHz Vgg1 Vgg2 Total Idq Pin Pout Idd ηD ηadd Gain I.R.L.
(V) (V) (mA) (dBm) (W) (dBm) (W) (A) (%) (%) (dB) (dB)
2.60 2.60 400 36.0 4.0 48.9 78.5 8.38 75.0 71.1 12.9 -13.3
2.64 2.66 600 36.0 4.0 48.9 80.0 8.49 75.4 71.6 13.0 -13.3
2.68 2.70 800 36.0 4.0 49.0 81.0 8.57 75.6 71.9 13.1 -13.3
2.73 2.74 1000 36.0 4.0 49.0 82.2 8.64 76.1 72.4 13.1 -13.4
2.76 2.76 1200 36.0 4.0 49.1 82.5 8.68 76.0 72.3 13.1 -13.4
2.79 2.79 1400 36.0 4.0 49.1 82.6 8.70 76.0 72.3 13.1 -13.4
2.81 2.81 1600 36.0 4.0 49.1 83.1 8.74 76.1 72.4 13.2 -13.4
175MHz Vgg1 Vgg2 Total Idq Pin Pout Idd ηD ηadd Gain I.R.L.
(V) (V) (mA) (dBm) (W) (dBm) (W) (A) (%) (%) (dB) (dB)
2.60 2.60 400 36.0 4.0 49.1 80.0 8.85 72.3 68.7 13.0 -8.7
2.64 2.65 600 36.0 4.0 49.1 81.4 8.95 72.8 69.2 13.1 -8.7
2.68 2.69 800 36.0 4.0 49.2 82.7 9.04 73.2 69.6 13.2 -8.7
2.73 2.73 1000 36.0 4.0 49.2 83.9 9.11 73.7 70.2 13.2 -8.7
2.76 2.76 1200 36.0 4.0 49.2 83.9 9.11 73.7 70.2 13.2 -8.6
2.79 2.79 1400 36.0 4.0 49.3 83.9 9.14 73.4 69.9 13.2 -8.7
2.81 2.81 1600 36.0 4.0 49.3 84.6 9.20 73.6 70.1 13.2 -8.6
Application Note for Silicon RF Power Semiconductors
14/16
RD70HUF2 single-stage amplifier with f=135-to-175MHz evaluation board
6-4. DC Power Supply vs.
OUTPUT POWER and DRAIN EFFICIENCY
Pin=4W
Ta=+25deg.C, Vgg fixedatIdq=Total1.0A(One-side 0.5A),Vds=12.5V
- AN-VHF-049-
Pin=4W
Ta=+25deg.C, Vgg fixedat Idq=Total1.0A(One-side 0.5A), Vds=12.5V
110
100
90
80
70
Pout , OUTPUT POWER(W)
60
10 11 12 13 14 15
VDD, SUPPLY VOLTAGE(V)
175MHz
135MHz
155MHz
DRAIN CURRENT
Pin=4W
Ta=+25deg.C, Vgg fixedat Idq=Total1.0A(One-side 0.5A), Vds=12.5V
12
90
80
70
60
50
ηD, DRAIN EFFICIENCY(%)
40
10 11 12 13 14 15
155MHz
175MHz
135MHz
VDD, SUPPLY VOLTAGE(V)
11
10
9
8
Idd, DRAIN CURRENT(A)
7
6
10 11 12 13 14 15
VDD, SUPPLY VOLTAGE(V)
135MHz
175MHz
155MHz
Application Note for Silicon RF Power Semiconductors
15/16
RD70HUF2 single-stage amplifier with f=135-to-175MHz evaluation board
- AN-VHF-049-
Ta=+25deg. C., Pin=4.0W
135MHz Vgg1 Vgg2 Vdd Idq Idd ηD ηadd Gain I.R.L.
(V) (V) (V) (mA) (dBm) (W) (dBm) (W) (A) (%) (%) (dB) (dB)
2.73 2.73 11.0 969 36.0 4.0 48.2 65.9 8.97 58.8 55.2 12.2 -10.5
2.73 2.73 12.0 995 36.0 4.0 48.8 75.0 9.57 62.7 59.3 12.7 -10.4
2.73 2.73 13.0 1033 36.0 4.0 49.3 84.3 10.16 66.4 63.2 13.3 -10.4
2.73 2.73 14.0 1067 36.0 4.0 49.7 93.5 10.70 69.9 66.9 13.7 -10.4
2.73 2.73 15.0 1097 36.0 4.0 50.1 102.6 11.22 73.1 70.3 14.1 -10.3
Pin Pout
155MHz Vgg1 Vgg2 Vdd Idq Idd ηD ηadd Gain I.R.L.
(V) (V) (V) (mA) (dBm) (W) (dBm) (W) (A) (%) (%) (dB) (dB)
2.73 2.73 11.0 937 36.0 4.0 47.8 60.9 7.40 65.9 61.6 11.8 -13.0
2.73 2.73 12.0 962 36.0 4.0 48.5 71.3 8.00 71.3 67.2 12.5 -13.2
2.73 2.73 13.0 1020 36.0 4.0 49.1 82.1 8.59 76.4 72.7 13.1 -13.4
2.73 2.73 14.0 1058 36.0 4.0 49.7 93.2 9.16 81.4 77.8 13.6 -13.5
2.72 2.73 15.0 1094 36.0 4.0 50.2 104.6 9.72 86.1 82.8 14.2 -13.7
175MHz Vgg1 Vgg2 Vdd Idq Idd ηD ηadd Gain I.R.L.
(V) (V) (V) (mA) (dBm) (W) (dBm) (W) (A) (%) (%) (dB) (dB)
2.73 2.73 11.0 947 36.1 4.0 48.1 63.9 7.80 65.6 61.5 12.0 -8.9
2.73 2.73 12.0 982 36.0 4.0 48.7 74.6 8.44 70.7 66.9 12.7 -8.8
2.73 2.73 13.0 1015 36.0 4.0 49.3 85.7 9.07 75.6 72.1 13.3 -8.6
2.73 2.73 14.0 1047 36.0 4.0 49.9 96.8 9.67 80.1 76.7 13.8 -8.5
2.73 2.73 15.0 1082 36.0 4.0 50.3 107.9 10.25 84.3 81.1 14.3 -8.4
Pin Pout
Pin Pout
Application Note for Silicon RF Power Semiconductors
16/16
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