APPLICATION NOTE
Silicon RF Power Semiconductors
Document NO. AN-GEN-038-B
Date : 16
Rev. date : 22
Prepared : S.Kametani
Confirmed : T.Okawa
(Taking charge of Silicon RF by
MIYOSHI Electronics)
SUBJECT: Test result of surge tolerance for RD-series
SUMMARY:
This application note show the test results of surge tolerance for RD-series.
- Type number
RD01MUS1
RD02MUS1
th
Sep. 2003
th
Jun. 2010
RD07MVS1
RD30HVF1
RD30HUF1
- Conditions
Human model(100pF,1.5KOHM)
- Test result
Conditions
100pF,1.5KOHM
/
/1second *3
Terminal RD01MUS1 RD02MUS1 RD07MVS1 RD30HVF1 RD30HUF1
GATE-SOURCE sample No.
GATE-DRAIN sample No.
DRAIN-SOURC
#1 80 #1 100 #1 200 #1 150 #1 150
#2 60 #2 75 #2 150 #2 150 #2 150
#3 60 #3 75 #3 200 #3 150 #3 150
#4 220 #4 75 #4 200 #4 200 #4 150
#5 160 #5 75 #5 200 #5 150 #5 150
#6 150 #6 75 #6 200 #6 250 #6 250
sample No.
#7 2500 #7 2000 #7 2500 #7 3000 #7 3500
#8 2500 #8 3000 #8 2000 #8 3000 #8 3500
#9 2000 #9 2000 #9 2500 #9 3500 #9 3500
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Application Note for Silicon RF Power Semiconductors
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