APPLICATION NOTE
SUBJECT: RD04HMS2 single-stage amplifier with f=890-950MHz evaluation board
Features:
- The evaluation board for RD04HMS2
- Frequency: 890-950MHz
- Typical input power: 0.2W
- Typical output power: 5.0W
- Quiescent Current: 100mA
Silicon RF Power Semiconductors
Document NO. AN-900-043-A
Date : 30thSep. 2010
Rev. date : 7thFeb. 2011
Prepared : H.Sakairi
K.Mori
Confirmed :T.Okawa
(Taking charge of Silicon RF by
MIYOSHI Electronics)
- Operating Current: 0.8A
- Surface-mounted RF power amplifier structure
Gate Bias Drain Bias
RF IN
RFOUT
PCB L=80mm W=55mm
Application Note for Silicon RF Power Semiconductors
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RD04HMS2 single-stage amplifier with f=890-950MHz evaluation board
Contents
1. Equivalent Circuitry ------------------------------------------------------------
2. PCB Layout -----------------------------------------------------------------------
3. Component List and Standard Deliverable ------------------------------------------
4. Thermal Design of Heat Sink ------------------------------------------------
5. Typical RF Characteristics ---------------------------------------------------5-1. Frequency vs. (Vds=12.5V) ---------------------------------------------
5-2. RF Power vs. (Vds=12.5V) -------------------------------------------
5-3. Drain Quiescent Current vs. (Vds=12.5V) ------------------------
5-4. DC Power Supply vs. (Idq=0.1A) ---------------------------------
- AN-900-043-A-
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RD04HMS2 single-stage amplifier with f=890-950MHz evaluation board
1. Equivalent Circuitry
- AN-900-043-A-
Application Note for Silicon RF Power Semiconductors
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2. PCB Layout
TOP VIEW
RD04HMS2 single-stage amplifier with f=890-950MHz evaluation board
- AN-900-043-A-
BOARD OUTLINE: 80.0*55.0(mm)
MATERIAL : FR-4<R1705>
THICKNESS : 0.8(mm)
TOP VIEW ( Parts mounting )
150p 150p
100p 100p
1000p
33ohm
4.7Kohm
16p
4p
CUT
9p
10p
1000p
12p 4p
5p
22u
4007C
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RD04HMS2 single-stage amplifier with f=890-950MHz evaluation board
Evaluation Board assembled with all the component
- AN-900-043-A-
3. Component List
- Component List
No. Description P/N Qty Manufacturer
Tr MOSFET RD04HMS2 1 Mitsubishi Electric Corporation
C 1 150 pF 2012 50V GRM2162C1H151JA01D 1 MURATA MANUFACTURING CO.
C 2 4 pF 2012 50V GRM2162C1H4R0CDZ01D 1 MURATA MANUFACTURING CO.
C 3 9 pF 2012 50V GRM2162C1H9R0DZ01D 1 MURATA MANUFACTURING CO.
C 4 16 pF 2012 50V GRM2162C1H160JZ01D 1 MURATA MANUFACTURING CO.
C 5 10 pF 2012 50V GRM2162C1H100JZ01D 1 MURATA MANUFACTURING CO.
C 6 12 pF 2012 50V GRM2162C1H120JZ01D 1 MURATA MANUFACTURING CO.
C 7 5 pF 2012 50V GRM2162C1H5R0CD01D 1 MURATA MANUFACTURING CO.
C 8 4 pF 2012 50V GRM2162C1H4R0CD01D 1 MURATA MANUFACTURING CO.
C 9 150 pF 2012 50V GRM2162C1H151JA01D 1 MURATA MANUFACTURING CO.
C 10 100 pF 2012 50V GRM2162C1H101JA01D 1 MURATA MANUFACTURING CO.
C 11 1000 pF 1608 50V GRM188R11H102KA01E 1 MURATA MANUFACTURING CO.
C 12 100 pF 2012 50V GRM2162C1H101JA01D 1 MURATA MANUFACTURING CO.
C 13 1000 pF 1608 50V GRM188R11H102KA01E 1 MURATA MANUFACTURING CO.
C 14 22 uF 50V H1002 1 NICHICON CORPORATION
L 1 37 nH * Diameter: Wire=0.4mm Inside=1.6mm T/N of coils=7 1 YC CORPORATION Co.,Ltd.
R 1 4.7k ohm 2012 RPC10T472J 1 TAIYOSHA ELECTRIC CO.
R 2 33 ohm 1608 RPC05N330J 1 TAIYOSHA ELECTRIC CO.
Pb PCB MS3A0166 1 Homebuilt
Rc SMA female connector HRM-300-118S 2 HIROSE ELECTRIC CO.,LTD
Bc 1 Bias connector red color TM-605R 2 MSK Corporation
Bc 2 Bias connector black color TM-605B 2 MSK Corporation
Pe Aluminum pedestal 1 Homebuilt
Conducting wire 4 Homebuilt
Screw M2 16 * Inductor of Rolling Coil measurement condition : f=100MHz
- Standard Deliverable
TYPE1
TYPE2
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