APPLICATION NOTE
SUBJECT: RD04HMS2 single-stage amplifier with f=890-950MHz evaluation board
Features:
- The evaluation board for RD04HMS2
- Frequency: 890-950MHz
- Typical input power: 0.2W
- Typical output power: 5.0W
- Quiescent Current: 100mA
Silicon RF Power Semiconductors
Document NO. AN-900-043-A
Date : 30thSep. 2010
Rev. date : 7thFeb. 2011
Prepared : H.Sakairi
K.Mori
Confirmed :T.Okawa
(Taking charge of Silicon RF by
MIYOSHI Electronics)
- Operating Current: 0.8A
- Surface-mounted RF power amplifier structure
Gate Bias Drain Bias
RF IN
RFOUT
PCB L=80mm W=55mm
Application Note for Silicon RF Power Semiconductors
1/16
RD04HMS2 single-stage amplifier with f=890-950MHz evaluation board
Contents
1. Equivalent Circuitry ------------------------------------------------------------
2. PCB Layout -----------------------------------------------------------------------
3. Component List and Standard Deliverable ------------------------------------------
4. Thermal Design of Heat Sink ------------------------------------------------
5. Typical RF Characteristics ---------------------------------------------------5-1. Frequency vs. (Vds=12.5V) ---------------------------------------------
5-2. RF Power vs. (Vds=12.5V) -------------------------------------------
5-3. Drain Quiescent Current vs. (Vds=12.5V) ------------------------
5-4. DC Power Supply vs. (Idq=0.1A) ---------------------------------
- AN-900-043-A-
Page
3
4
5
6
7
7
8
12
14
Application Note for Silicon RF Power Semiconductors
2/16
RD04HMS2 single-stage amplifier with f=890-950MHz evaluation board
1. Equivalent Circuitry
- AN-900-043-A-
Application Note for Silicon RF Power Semiconductors
3/16
2. PCB Layout
TOP VIEW
RD04HMS2 single-stage amplifier with f=890-950MHz evaluation board
- AN-900-043-A-
BOARD OUTLINE: 80.0*55.0(mm)
MATERIAL : FR-4<R1705>
THICKNESS : 0.8(mm)
TOP VIEW ( Parts mounting )
150p 150p
100p 100p
1000p
33ohm
4.7Kohm
16p
4p
CUT
9p
10p
1000p
12p 4p
5p
22u
4007C
Application Note for Silicon RF Power Semiconductors
4/16
RD04HMS2 single-stage amplifier with f=890-950MHz evaluation board
Evaluation Board assembled with all the component
PCB (raw board)
- AN-900-043-A-
3. Component List
- Component List
No. Description P/N Qty Manufacturer
Tr MOSFET RD04HMS2 1 Mitsubishi Electric Corporation
C 1 150 pF 2012 50V GRM2162C1H151JA01D 1 MURATA MANUFACTURING CO.
C 2 4 pF 2012 50V GRM2162C1H4R0CDZ01D 1 MURATA MANUFACTURING CO.
C 3 9 pF 2012 50V GRM2162C1H9R0DZ01D 1 MURATA MANUFACTURING CO.
C 4 16 pF 2012 50V GRM2162C1H160JZ01D 1 MURATA MANUFACTURING CO.
C 5 10 pF 2012 50V GRM2162C1H100JZ01D 1 MURATA MANUFACTURING CO.
C 6 12 pF 2012 50V GRM2162C1H120JZ01D 1 MURATA MANUFACTURING CO.
C 7 5 pF 2012 50V GRM2162C1H5R0CD01D 1 MURATA MANUFACTURING CO.
C 8 4 pF 2012 50V GRM2162C1H4R0CD01D 1 MURATA MANUFACTURING CO.
C 9 150 pF 2012 50V GRM2162C1H151JA01D 1 MURATA MANUFACTURING CO.
C 10 100 pF 2012 50V GRM2162C1H101JA01D 1 MURATA MANUFACTURING CO.
C 11 1000 pF 1608 50V GRM188R11H102KA01E 1 MURATA MANUFACTURING CO.
C 12 100 pF 2012 50V GRM2162C1H101JA01D 1 MURATA MANUFACTURING CO.
C 13 1000 pF 1608 50V GRM188R11H102KA01E 1 MURATA MANUFACTURING CO.
C 14 22 uF 50V H1002 1 NICHICON CORPORATION
L 1 37 nH * Diameter: Wire=0.4mm Inside=1.6mm T/N of coils=7 1 YC CORPORATION Co.,Ltd.
R 1 4.7k ohm 2012 RPC10T472J 1 TAIYOSHA ELECTRIC CO.
R 2 33 ohm 1608 RPC05N330J 1 TAIYOSHA ELECTRIC CO.
Pb PCB MS3A0166 1 Homebuilt
Rc SMA female connector HRM-300-118S 2 HIROSE ELECTRIC CO.,LTD
Bc 1 Bias connector red color TM-605R 2 MSK Corporation
Bc 2 Bias connector black color TM-605B 2 MSK Corporation
Pe Aluminum pedestal 1 Homebuilt
Conducting wire 4 Homebuilt
Screw M2 16 * Inductor of Rolling Coil measurement condition : f=100MHz
- Standard Deliverable
TYPE1
TYPE2
Application Note for Silicon RF Power Semiconductors
5/16
RD04HMS2 single-stage amplifier with f=890-950MHz evaluation board
4. Thermal Design of Heat Sink
- AN-900-043-A-
Tr
Pb
Pe
Tch
=(Pout/Efficiency-Pout+Pin) x R
(delta)
Also, operating Tj (“Tj
Therefore T
T
Pb bottom-air
Pb bottom-air
=“Tj
(op)
Junction point of MOSFET chip
R
th(ch-Pb bottom)=Rth(ch-case)+Rth(case-Pb bottom)
=5.0 (deg. C./W)
th(ch-Pb bottom)
”)=120 (deg. C.), in case of RD series that Tch
(op)
=(4W/50%-4W+0.2) x 5.0 = 21 (deg. C.)
= 150 (deg. C.)
(max)
as delta temperature between Pb bottom and the ambient 60 deg. C.
”- Tch
(delta)
- Ta
(60deg.C.)
=120-21-60=39 (deg. C.)
(in this package)
In terms of long-term reliability, “Tj
” has to be kept less than 120 deg. C. i.e. T
(op)
Pb bottom-air
has to be less than 39 deg. C..
The thermal resistance of the heat sink to border it:
Rth
(Pb bottom-air)=TPb bottom-air
/(Pout/Efficiency-Pout+Pin)=39/(4W/50%-4W+0.2)= 9.3 (deg. C./W)
Therefore
it is preferable that the thermal resistance of the heat sink is much smaller than 9.3 deg. C./W.
Application Note for Silicon RF Power Semiconductors
6/16
RD04HMS2 single-stage amplifier with f=890-950MHz evaluation board
885
2.65
23.0
0.2
37.4
5.4
14.4
0.79
53.1
55.2
-9.2
890
2.65
23.0
0.2
37.5
5.6
14.5
0.79
54.8
56.8
-10.4
895
2.65
23.0
0.2
37.6
5.7
14.6
0.79
56.0
58.0
-11.7
900
2.65
23.0
0.2
37.7
5.8
14.7
0.79
57.2
59.2
-13.4
905
2.65
23.0
0.2
37.7
5.9
14.7
0.79
58.0
60.1
-15.5
910
2.65
23.0
0.2
37.8
6.0
14.8
0.79
58.4
60.5
-18.4
915
2.65
23.0
0.2
37.8
6.0
14.8
0.79
58.5
60.5
-22.4
920
2.65
23.0
0.2
37.7
5.9
14.8
0.78
59.3
61.3
-26.6
925
2.65
23.0
0.2
37.7
5.9
14.7
0.78
59.2
61.2
-24.0
930
2.65
23.0
0.2
37.7
5.9
14.7
0.76
59.6
61.7
-19.5
23.0
0.2
37.7
5.8
945
2.65
23.0
0.2
37.5
5.7
14.5
0.74
59.4
61.5
-12.1
950
2.65
23.0
0.2
37.4
5.5
14.5
0.74
58.0
60.1
-10.6
955
2.65
23.0
0.2
37.4
5.5
14.4
0.73
58.0
60.2
-9.4
960
2.65
23.0
0.2
37.3
5.4
14.3
0.71
58.0
60.3
-8.4
- AN-900-043-A-
5. Typical Performance
5-1. Frequency vs.
OUTPUT POWER, POWER GAIN, DRAIN EFFICIENCY, DRAIN CURRENT and INPUT RETURN LOSS
(Vds=12.5V)
Ta=+25deg.C
Vds=12.5V, Idq=0.1A, Pin=0.2W
16
80
Ta=+25deg.C
Vds=12.5V, Idq=0.1A, Pin=0.2W
50
10
14
12
10
8
6
Pout(W) , Gp(dB)
4
2
0
880 890 900 910 920 930 940 950 960
Gp
ηD
Pout
f (MHz)
Ta=+25deg. C., Vds=12.5V, Idq=0.1A, Pin=0.2W
Freq. Vgg Gp ID(RF) ηadd ηD I.R.L.
Pin Pout
(MHz) (V) (dBm) (W) (dBm) (W) (dB) (A) (%) (%) (dB)
880 2.65
23.0 0.2 37.2 5.3
70
60
50
40
30
20
10
0
Idd
40
Pout
30
Drain Effi(%)
Pout(dBm)
20
10
880 890 900 910 920 930 940 950 960
I.R.L.
f (MHz)
5
0
-5
-10
-15
-20
-25
-30
Input R. L. (dB), Idd(A)
14.2 0.79 51.5 53.5 -8.3
935 2.65
940 2.65
23.0 0.2 37.6 5.7
Application Note for Silicon RF Power Semiconductors
14.7 0.76 59.1 61.2 -16.3
14.6 0.75 59.0 61.1 -13.9
7/16
5-2. RF Power vs.
890MHz
920MHz
RD04HMS2 single-stage amplifier with f=890-950MHz evaluation board
- AN-900-043-A-
INPUT POWER (Vds=12.5V)
Ta=+25deg.C,Vds=12.5V, Idq=0.1A
8
6
920MHz
4
2
Pout , OUTPUT POWER(W)
0
0 5 10 15 20 25
Pin, INPUT POWER(dBm)
POWER GAIN (Vds=12.5V)
Ta=+25deg.C,Vds=12.5V,Idq=0.1A
17
16
15
14
890MHz
Gp, POWER GAIN(dB)
13
920MHz
950MHz
950MHz
Ta=+25deg.C,Vds=12.5V, Idq=0.1A
40
35
30
950MHz
25
20
15
Pout , OUTPUT POWER(dBm)
890MHz
10
0 5 10 15 20 25
Pin, INPUT POWER(dBm)
Ta=+25deg.C,Vds=12.5V, Idq=0.1A
18
920MHz
17
16
15
950MHz
14
Gp, POWER GAIN(dB)
890MHz
13
12
0 1 2 3 4 5 6 7
Pout, OUTPUT POWER(W)
12
14 16 18 20 22 24 26 28 30 32 34 36 38 40
Pout, OUTPUT POWER(dBm)
Application Note for Silicon RF Power Semiconductors
8/16
RD04HMS2 single-stage amplifier with f=890-950MHz evaluation board
- AN-900-043-A-
DRAIN EFFICIENCY (Vds=12.5V)
Ta=+25deg.C,Vds=12.5V,Idq=0.1A
70
950MHz
60
50
40
30
890MHz
920MHz
20
ηD, DRAIN EFFICIENCY(%)
10
0
0 1 2 3 4 5 6 7
Pout, OUTPUT POWER(W)
DRAIN CURRENT (Vds=12.5V)
Ta=+25deg.C,Vds=12.5V,Idq=0.1A
Ta=+25deg.C,Vds=12.5V, Idq=0.1A
70
60
50
950MHz
40
920MHz
30
20
ηD, DRAIN EFFICIENCY(%)
10
890MHz
0
14 16 18 20 22 24 26 28 30 32 34 36 38 40
Pout, OUTPUT POWER(dBm)
Ta=+25deg.C,Vds=12.5V,Idq=0.1A
1
0.9
890MHz
0.8
0.7
920MHz
0.6
0.5
0.4
950MHz
0.3
0.2
Idd, DRAIN CURRENT(A)
0.1
0
0 1 2 3 4 5 6 7
Pout, OUTPUT POWER(W)
1
0.9
0.8
0.7
0.6
890MHz
0.5
0.4
920MHz
0.3
0.2
Idd, DRAIN CURRENT(A)
0.1
950MHz
0
14 16 18 20 22 24 26 28 30 32 34 36 38 40
Pout, OUTPUT POWER(dBm)
Application Note for Silicon RF Power Semiconductors
9/16
RD04HMS2 single-stage amplifier with f=890-950MHz evaluation board
VggGpID(RF)
ηadd
ηD
I.R.L.
(V)
(dBm)
(W)
(dBm)
(W)
(dB)
(A)
(%)
(%)
(dB)
- AN-900-043-A-
INPUT RETURN LOSS (Vds=12.5V)
Ta=+25deg.C,Vds=12.5V, Idq=0.1A
0
-5
-10
-15
-20
-25
I.R.L., INPUT RETURN LOSS (dB)
-30
0 1 2 3 4 5 6 7
Pout, OUTPUT POWER(W)
890MHz
950MHz
920MHz
Ta=+25deg. C., Vds=12.5V, Idq=0.1A
890MHz
2.65 0.0 0.00 14.4 0.0 14.4 0.11 1.9 1.9 -8.9
2.65 1.0 0.00 15.4 0.0 14.4 0.11 2.4 2.5 -8.9
2.65 2.0 0.00 16.4 0.0 14.4 0.11 3.0 3.1 -8.9
2.65 3.0 0.00 17.4 0.1 14.4 0.13 3.4 3.5 -8.9
2.65 4.0 0.00 18.4 0.1 14.4 0.13 4.3 4.5 -8.9
2.65 5.0 0.00 19.4 0.1 14.5 0.14 4.9 5.1 -8.9
2.65 6.0 0.00 20.5 0.1 14.5 0.14 6.2 6.4 -8.9
2.65 7.0 0.00 21.5 0.1 14.5 0.15 7.2 7.5 -8.9
2.65 8.0 0.01 22.5 0.2 14.5 0.16 8.3 8.6 -8.9
2.65 9.0 0.01 23.5 0.2 14.5 0.18 9.8 10.2 -8.9
2.65 10.0 0.01 24.5 0.3 14.5 0.19 11.6 12.0 -8.9
2.65 11.0 0.01 25.5 0.4 14.6 0.21 12.9 13.4 -8.9
2.65 12.0 0.02 26.6 0.5 14.6 0.24 14.7 15.2 -9.0
2.65 13.0 0.02 27.6 0.6 14.6 0.26 16.9 17.5 -9.0
2.65 14.0 0.02 28.6 0.7 14.7 0.29 19.6 20.3 -9.1
2.65 15.0 0.03 29.7 0.9 14.7 0.33 22.2 23.0 -9.1
2.65 16.0 0.04 30.7 1.2 14.8 0.36 25.3 26.1 -9.2
2.65 16.9 0.05 31.8 1.5 14.8 0.40 28.9 29.9 -9.2
2.65 18.0 0.06 32.8 1.9 14.9 0.45 32.8 34.0 -9.3
2.65 19.0 0.08 33.8 2.4 14.9 0.51 36.4 37.7 -9.4
2.65 20.0 0.10 34.9 3.1 14.9 0.58 41.4 42.8 -9.6
2.65 21.0 0.12 35.9 3.9 14.9 0.65 45.9 47.4 -9.8
2.65 22.0 0.16 36.8 4.8 14.8 0.73 50.7 52.5 -10.1
2.65 23.0 0.20 37.5 5.6 14.5 0.79 54.7 56.7 -10.4
2.65 24.0 0.25 38.0 6.3 14.0 0.85 57.2 59.5 -10.5
2.65 25.0 0.31 38.4 7.0 13.5 0.90 59.0 61.8 -10.4
Pin Pout
Ta=+25deg.C,Vds=12.5V, Idq=0.1A
0
890MHz
-5
-10
-15
950MHz
920MHz
-20
-25
I.R.L., INPUT RETURN LOSS (dB)
-30
14 16 18 20 22 24 26 28 30 32 34 36 38 40
Pout, OUTPUT POWER(dBm)
Application Note for Silicon RF Power Semiconductors
10/16
RD04HMS2 single-stage amplifier with f=890-950MHz evaluation board
- AN-900-043-A-
920MHz
Vgg Gp ID(RF) ηadd ηD I.R.L.
(V) (dBm) (W) (dBm) (W) (dB) (A) (%) (%) (dB)
2.65 0.0 0.00 15.6 0.0 15.6 0.11 2.5 2.6 -20.2
2.65 1.0 0.00 16.6 0.0 15.6 0.11 3.1 3.2 -20.2
2.65 2.0 0.00 17.6 0.1 15.6 0.13 3.6 3.7 -20.3
2.65 3.0 0.00 18.6 0.1 15.6 0.13 4.5 4.6 -20.3
2.65 4.0 0.00 19.6 0.1 15.7 0.13 5.7 5.9 -20.3
2.65 5.0 0.00 20.6 0.1 15.6 0.14 6.5 6.7 -20.3
2.65 6.0 0.00 21.6 0.1 15.7 0.15 7.6 7.8 -20.2
2.65 7.0 0.00 22.6 0.2 15.7 0.15 9.5 9.8 -20.3
2.65 8.0 0.01 23.6 0.2 15.7 0.16 11.0 11.3 -20.3
2.65 9.0 0.01 24.7 0.3 15.7 0.19 12.1 12.4 -20.4
2.65 10.0 0.01 25.7 0.4 15.7 0.20 14.4 14.8 -20.5
2.65 11.0 0.01 26.7 0.5 15.7 0.23 16.2 16.6 -20.6
2.65 12.0 0.02 27.7 0.6 15.8 0.25 18.4 18.9 -20.8
2.65 13.0 0.02 28.8 0.8 15.8 0.28 21.3 21.9 -21.0
2.65 14.0 0.02 29.8 1.0 15.8 0.30 24.7 25.4 -21.3
2.65 15.0 0.03 30.8 1.2 15.9 0.34 28.0 28.7 -21.6
2.65 16.0 0.04 31.9 1.5 15.9 0.38 31.8 32.7 -21.9
2.65 16.9 0.05 32.9 1.9 15.9 0.43 35.5 36.5 -22.4
2.65 18.0 0.06 33.9 2.5 15.9 0.48 40.3 41.3 -23.0
2.65 19.0 0.08 34.9 3.1 15.9 0.54 44.8 46.0 -23.7
2.65 20.0 0.10 35.8 3.8 15.9 0.60 49.7 51.0 -25.1
2.65 21.0 0.12 36.6 4.6 15.7 0.66 54.2 55.7 -27.0
2.65 22.0 0.16 37.3 5.3 15.3 0.73 57.1 58.9 -27.5
2.65 23.0 0.20 37.7 5.9 14.8 0.78 59.2 61.2 -26.8
2.65 24.0 0.25 38.1 6.5 14.1 0.83 60.3 62.8 -25.8
2.65 25.0 0.31 38.4 6.9 13.4 0.86 61.2 64.1 -24.7
Pin Pout
950MHz
Vgg Gp ID(RF) ηadd ηD I.R.L.
(V) (dBm) (W) (dBm) (W) (dB) (A) (%) (%) (dB)
2.65 -0.1 0.00 15.6 0.0 15.6 0.11 2.5 2.5 -12.8
2.65 0.9 0.00 16.6 0.0 15.6 0.11 3.1 3.2 -12.8
2.65 1.9 0.00 17.6 0.1 15.7 0.11 4.0 4.1 -12.8
2.65 2.9 0.00 18.6 0.1 15.7 0.13 4.5 4.7 -12.8
2.65 3.9 0.00 19.6 0.1 15.7 0.13 5.7 5.9 -12.8
2.65 5.0 0.00 20.7 0.1 15.7 0.14 6.6 6.7 -12.8
2.65 5.9 0.00 21.6 0.1 15.7 0.14 8.2 8.5 -12.8
2.65 6.9 0.00 22.7 0.2 15.7 0.15 9.6 9.8 -12.8
2.65 7.9 0.01 23.7 0.2 15.7 0.16 11.1 11.4 -12.7
2.65 8.9 0.01 24.7 0.3 15.7 0.18 13.0 13.4 -12.7
2.65 9.9 0.01 25.7 0.4 15.8 0.20 14.5 14.9 -12.7
2.65 10.9 0.01 26.7 0.5 15.8 0.21 17.1 17.5 -12.6
2.65 11.9 0.02 27.7 0.6 15.8 0.24 19.4 19.9 -12.5
2.65 12.9 0.02 28.7 0.7 15.8 0.26 22.2 22.8 -12.5
2.65 13.9 0.02 29.8 0.9 15.8 0.29 25.5 26.2 -12.4
2.65 14.9 0.03 30.8 1.2 15.9 0.33 28.8 29.5 -12.3
2.65 15.9 0.04 31.8 1.5 15.9 0.36 32.3 33.2 -12.2
2.65 16.9 0.05 32.8 1.9 15.9 0.41 35.9 36.8 -12.1
2.65 17.9 0.06 33.8 2.4 15.9 0.45 41.4 42.4 -12.0
2.65 18.9 0.08 34.8 3.0 15.8 0.51 45.4 46.7 -11.8
2.65 19.9 0.10 35.6 3.7 15.7 0.56 50.7 52.1 -11.5
2.65 20.9 0.12 36.4 4.3 15.5 0.63 54.0 55.6 -11.0
2.65 21.9 0.16 37.0 5.0 15.1 0.68 57.1 59.0 -10.7
2.65 22.9 0.20 37.4 5.5 14.5 0.73 58.6 60.8 -10.7
2.65 23.9 0.25 37.8 6.0 13.9 0.78 59.4 61.9 -10.7
2.65 24.9 0.31 38.1 6.4 13.2 0.81 60.2 63.2 -10.8
Pin Pout
Application Note for Silicon RF Power Semiconductors
11/16
RD04HMS2 single-stage amplifier with f=890-950MHz evaluation board
890MHz
Vgg
Idq
Idd
ηD
ηadd
Gain
I.R.L.
(dBm)
(W)
(dBm)
(W)
(A)
(%)
(%)
(dB)
(dB)
2.10
0.3
23.0
0.2
35.2
3.3
0.55
47.5
44.6
12.2
-8.0
2.15
0.8
23.0
0.2
35.4
3.5
0.58
48.7
45.9
12.4
-8.1
2.21
1.7
23.0
0.2
35.7
3.7
0.60
49.8
47.2
12.7
-8.4
2.25
3.0
23.0
0.2
36.0
4.0
0.62
50.9
48.3
13.0
-8.5
2.30
4.8
23.0
0.2
36.2
4.1
0.64
51.6
49.1
13.2
-8.7
2.36
9.5
23.0
0.2
36.5
4.4
0.67
52.8
50.5
13.5
-9.0
2.40
15.0
23.0
0.2
36.6
4.6
0.69
53.5
51.2
13.6
-9.2
2.45
23.5
23.0
0.2
36.8
4.8
0.71
54.1
51.8
13.8
-9.4
2.51
38.7
23.0
0.2
37.0
5.0
0.74
54.9
52.7
14.0
-9.7
2.55
55.0
23.0
0.2
37.2
5.2
0.75
55.3
53.2
14.2
-9.9
2.60
75.6
23.0
0.2
37.3
5.4
0.77
55.8
53.7
14.3
-10.1
2.66
111.3
23.0
0.2
37.5
5.6
0.80
56.1
54.1
14.5
-10.4
2.70
144.1
23.0
0.2
37.6
5.7
0.81
56.4
54.4
14.6
-10.6
2.75
181.1
23.0
0.2
37.7
5.9
0.83
56.7
54.7
14.7
-10.8
2.81
236.9
23.0
0.2
37.8
6.1
0.86
56.8
54.9
14.8
-11.1
2.85
282.8
23.0
0.2
37.9
6.2
0.87
56.9
55.1
14.9
-11.3
2.90
331.5
23.0
0.2
38.0
6.3
0.89
57.0
55.2
15.0
-11.6
Pin
Pout
5-3. Drain Quiescent Current vs.
OUTPUT POWER and DRAIN EFFICIENCY (Vds=12.5V)
- AN-900-043-A-
Pin=0.2W
Ta=+25deg.C,Vds=12.5V
7
920MHz
6
5
890MHz
4
Pout , OUTPUT POWER(W)
3
0 100 200 300
IDQ, DRAIN QUIESCENT CURRENT(mA)
950MHz
Ta=+25deg. C., Vds=12.5V, Pin=0.2W
Pin=0.2W
Ta=+25deg.C,Vds=12.5V
70
920MHz
60
950MHz
50
ηD, DRAIN EFFICIENCY (%)
40
0 100 200 300
IDQ, DRAIN QUIESCENT CURRENT(mA)
890MHz
(V) (mA)
Application Note for Silicon RF Power Semiconductors
12/16
RD04HMS2 single-stage amplifier with f=890-950MHz evaluation board
920MHz
Vgg
Idq
Idd
ηD
ηadd
Gain
I.R.L.
(dBm)
(W)
(dBm)
(W)
(A)
(%)
(%)
(dB)
(dB)
2.10
0.3
23.0
0.2
36.4
4.4
0.61
57.4
54.8
13.4
-18.3
2.15
0.8
23.0
0.2
36.6
4.5
0.63
57.9
55.4
13.5
-18.9
2.21
1.8
23.0
0.2
36.8
4.7
0.65
58.5
56.1
13.7
-19.7
2.25
3.0
23.0
0.2
36.9
4.9
0.66
58.9
56.4
13.9
-20.3
2.30
4.8
23.0
0.2
37.0
5.0
0.68
59.3
56.9
14.0
-20.9
2.36
9.5
23.0
0.2
37.1
5.2
0.69
59.5
57.2
14.1
-21.8
2.40
14.9
23.0
0.2
37.2
5.3
0.71
59.8
57.6
14.2
-22.5
2.45
23.3
23.0
0.2
37.3
5.4
0.72
60.1
57.9
14.3
-23.2
2.51
38.5
23.0
0.2
37.5
5.6
0.74
60.2
58.1
14.4
-24.2
2.55
55.0
23.0
0.2
37.5
5.7
0.75
60.4
58.2
14.5
-25.0
2.60
75.4
23.0
0.2
37.6
5.8
0.77
60.4
58.3
14.6
-25.7
2.66
111.0
23.0
0.2
37.7
5.9
0.78
60.5
58.5
14.7
-26.5
2.70
143.8
23.0
0.2
37.8
6.0
0.80
60.4
58.4
14.8
-27.0
2.75
180.9
23.0
0.2
37.9
6.1
0.81
60.5
58.6
14.9
-27.4
2.81
236.4
23.0
0.2
38.0
6.3
0.83
60.5
58.5
15.0
-27.4
2.85
282.3
23.0
0.2
38.0
6.3
0.84
60.3
58.4
15.0
-27.2
2.90
331.1
23.0
0.2
38.1
6.4
0.86
60.2
58.3
15.1
-26.8
950MHz
Vgg
Idq
Idd
ηD
ηadd
Gain
I.R.L.
(dBm)
(W)
(dBm)
(W)
(A)
(%)
(%)
(dB)
(dB)
2.10
0.4
23.0
0.2
36.3
4.3
0.59
58.6
55.9
13.3
-13.0
2.15
0.9
23.0
0.2
36.5
4.4
0.60
58.9
56.2
13.4
-12.7
2.21
1.7
23.0
0.2
36.6
4.5
0.61
59.2
56.7
13.6
-12.5
2.25
3.0
23.0
0.2
36.7
4.7
0.63
59.5
57.0
13.7
-12.3
2.30
4.7
23.0
0.2
36.8
4.8
0.64
59.6
57.1
13.8
-12.1
2.36
9.4
23.0
0.2
36.9
4.9
0.66
59.8
57.3
13.9
-11.8
2.40
14.9
23.0
0.2
37.0
5.0
0.67
60.0
57.6
14.0
-11.6
2.45
23.3
23.0
0.2
37.1
5.1
0.68
60.0
57.7
14.1
-11.4
2.51
38.5
23.0
0.2
37.2
5.2
0.69
60.1
57.8
14.2
-11.2
2.55
54.9
23.0
0.2
37.3
5.3
0.71
60.1
57.8
14.3
-11.0
2.60
75.3
23.0
0.2
37.3
5.4
0.72
60.1
57.9
14.3
-10.8
2.66
111.1
23.0
0.2
37.4
5.5
0.74
60.0
57.9
14.4
-10.6
2.70
142.7
23.0
0.2
37.5
5.6
0.75
59.9
57.8
14.5
-10.4
2.75
180.5
23.0
0.2
37.6
5.7
0.76
59.9
57.8
14.5
-10.3
2.81
236.5
23.0
0.2
37.6
5.8
0.78
59.7
57.7
14.6
-10.1
2.85
282.0
23.0
0.2
37.7
5.9
0.79
59.5
57.5
14.7
-9.9
2.90
330.7
23.0
0.2
37.8
6.0
0.81
59.2
57.2
14.7
-9.8
Pin
Pout
Pin
Pout
(V) (mA)
- AN-900-043-A-
(V) (mA)
Application Note for Silicon RF Power Semiconductors
13/16
RD04HMS2 single-stage amplifier with f=890-950MHz evaluation board
5-4. DC Power Supply vs.
OUTPUT POWER and DRAIN EFFICIENCY (Idq=0.1A)
Pin=0.2W
Ta=+25deg.C, Vgg fixedat Idq=0.1A Vds=12.5V
- AN-900-043-A-
Pin=0.2W
Ta=+25deg.C, Vgg fixedatIdq=0.1A Vds=12.5V
8
6
4
890MHz
2
Pout , OUTPUT POWER(W)
0
4 5 6 7 8 9 10 11 12 13
VDD, SUPPLY VOLTAGE(V)
920MHz
DRAIN CURRENT (Idq=0.1A)
Pin=0.2W
Ta=+25deg.C, Vgg fixedat Idq=0.1A Vds=12.5V
950MHz
70
920MHz
60
890MHz
ηD, DRAIN EFFICIENCY(%)
50
4 5 6 7 8 9 10 11 12 13
950MHz
VDD, SUPPLY VOLTAGE(V)
1.0
0.8
920MHz
890MHz
0.6
0.4
Idd, DRAIN CURRENT(A)
0.2
0.0
4 5 6 7 8 9 10 11 12 13
VDD, SUPPLY VOLTAGE(V)
950MHz
Application Note for Silicon RF Power Semiconductors
14/16
RD04HMS2 single-stage amplifier with f=890-950MHz evaluation board
890MHz
Idd
ηD
ηadd
Gain
I.R.L.
(dBm)
(W)
(dBm)
(W)
(A)
(%)
(%)
(dB)
(dB)
2.66
4.0
0.07
23.0
0.2
29.5
0.9
0.36
62.2
48.4
6.5
-10.5
2.66
4.5
0.07
23.0
0.2
30.5
1.1
0.40
62.9
51.7
7.5
-10.6
2.66
5.0
0.08
23.0
0.2
31.3
1.4
0.43
63.3
54.0
8.3
-10.7
2.66
5.5
0.08
23.0
0.2
32.1
1.6
0.46
63.6
55.7
9.1
-10.8
2.66
6.0
0.08
23.0
0.2
32.7
1.9
0.49
63.9
57.1
9.7
-10.9
2.66
6.5
0.08
23.0
0.2
33.4
2.2
0.52
64.2
58.3
10.4
-10.9
2.66
7.0
0.08
23.0
0.2
33.9
2.5
0.55
64.1
58.9
10.9
-11.0
2.66
7.5
0.08
23.0
0.2
34.4
2.8
0.58
63.8
59.2
11.4
-11.0
2.66
8.0
0.09
23.0
0.2
34.9
3.1
0.61
63.7
59.6
11.9
-11.0
2.66
8.5
0.09
23.0
0.2
35.3
3.4
0.64
63.2
59.5
12.3
-11.0
2.66
9.0
0.09
23.0
0.2
35.7
3.7
0.66
62.8
59.4
12.7
-11.0
2.66
9.5
0.09
23.0
0.2
36.1
4.0
0.69
62.2
59.1
13.1
-10.9
2.66
10.0
0.09
23.0
0.2
36.4
4.3
0.71
61.6
58.7
13.4
-10.9
2.66
10.5
0.10
23.0
0.2
36.7
4.6
0.73
60.7
58.1
13.7
-10.8
2.66
11.0
0.10
23.0
0.2
36.9
4.9
0.75
59.8
57.3
13.9
-10.7
2.66
11.5
0.10
23.0
0.2
37.1
5.2
0.77
58.9
56.6
14.1
-10.6
2.66
12.0
0.10
23.0
0.2
37.3
5.4
0.78
57.8
55.7
14.3
-10.5
2.66
12.5
0.11
23.0
0.2
37.5
5.6
0.80
56.6
54.5
14.5
-10.4
2.66
13.0
0.11
23.0
0.2
37.6
5.8
0.81
55.2
53.3
14.6
-10.2
920MHz
Idd
ηD
ηadd
Gain
I.R.L.
(dBm)
(W)
(dBm)
(W)
(A)
(%)
(%)
(dB)
(dB)
2.66
4.0
0.07
23.0
0.2
29.2
0.8
0.36
58.8
44.8
6.2
-23.4
2.66
4.5
0.07
23.0
0.2
30.2
1.0
0.39
59.9
48.4
7.2
-24.1
2.66
5.0
0.08
23.0
0.2
31.0
1.3
0.42
60.8
51.2
8.0
-24.6
2.66
5.5
0.08
23.0
0.2
31.8
1.5
0.45
61.4
53.2
8.8
-25.1
2.66
6.0
0.08
23.0
0.2
32.4
1.8
0.47
61.9
54.9
9.5
-25.4
2.66
6.5
0.08
23.0
0.2
33.1
2.0
0.50
62.6
56.5
10.1
-25.7
2.66
7.0
0.08
23.0
0.2
33.7
2.3
0.53
62.9
57.5
10.7
-25.9
2.66
7.5
0.08
23.0
0.2
34.2
2.6
0.56
63.2
58.3
11.2
-26.1
2.66
8.0
0.09
23.0
0.2
34.7
2.9
0.58
63.3
59.0
11.7
-26.2
2.66
8.5
0.09
23.0
0.2
35.1
3.3
0.61
63.4
59.5
12.1
-26.3
2.66
9.0
0.09
23.0
0.2
35.6
3.6
0.63
63.3
59.8
12.5
-26.4
2.66
9.5
0.09
23.0
0.2
35.9
3.9
0.66
63.2
60.0
12.9
-26.5
2.66
10.0
0.09
23.0
0.2
36.3
4.3
0.68
63.1
60.1
13.3
-26.6
2.66
10.5
0.10
23.0
0.2
36.6
4.6
0.70
62.8
60.1
13.6
-26.6
2.66
11.0
0.10
23.0
0.2
36.9
4.9
0.72
62.4
59.9
13.9
-26.7
2.66
11.5
0.10
23.0
0.2
37.2
5.3
0.74
62.0
59.6
14.2
-26.7
2.66
12.0
0.10
23.0
0.2
37.5
5.6
0.76
61.4
59.2
14.5
-26.7
2.66
12.5
0.11
23.0
0.2
37.7
5.9
0.78
60.9
58.8
14.7
-26.7
2.66
13.0
0.11
23.0
0.2
38.0
6.2
0.80
60.2
58.3
14.9
-26.7
Pin
Pout
Pin
Pout
- AN-900-043-A-
Ta=+25deg. C., Idq=0.1A
Vgg Vdd Idq
(V) (V) (mA)
Vgg Vdd Idq
(V) (V) (mA)
Application Note for Silicon RF Power Semiconductors
15/16
RD04HMS2 single-stage amplifier with f=890-950MHz evaluation board
950MHz
Idd
ηD
ηadd
Gain
I.R.L.
(dBm)
(W)
(dBm)
(W)
(A)
(%)
(%)
(dB)
(dB)
2.66
4.0
0.07
23.0
0.2
28.9
0.8
0.35
55.1
40.9
5.9
-11.0
2.66
4.5
0.07
23.0
0.2
29.8
1.0
0.38
56.4
44.8
6.9
-10.9
2.66
5.0
0.08
23.0
0.2
30.7
1.2
0.41
57.3
47.6
7.7
-10.8
2.66
5.5
0.08
23.0
0.2
31.4
1.4
0.44
58.1
49.7
8.4
-10.7
2.66
6.0
0.08
23.0
0.2
32.1
1.6
0.46
59.1
51.8
9.1
-10.6
2.66
6.5
0.08
23.0
0.2
32.7
1.9
0.48
59.6
53.3
9.7
-10.6
2.66
7.0
0.08
23.0
0.2
33.3
2.1
0.51
60.2
54.6
10.3
-10.5
2.66
7.5
0.08
23.0
0.2
33.8
2.4
0.53
60.6
55.6
10.8
-10.5
2.66
8.0
0.09
23.0
0.2
34.3
2.7
0.55
60.9
56.4
11.3
-10.5
2.66
8.5
0.09
23.0
0.2
34.8
3.0
0.58
61.3
57.3
11.8
-10.4
2.66
9.0
0.09
23.0
0.2
35.2
3.3
0.60
61.4
57.7
12.2
-10.4
2.66
9.5
0.09
23.0
0.2
35.6
3.6
0.62
61.5
58.1
12.6
-10.4
2.66
10.0
0.09
23.0
0.2
35.9
3.9
0.64
61.6
58.5
13.0
-10.4
2.66
10.5
0.10
23.0
0.2
36.3
4.2
0.66
61.4
58.5
13.3
-10.5
2.66
11.0
0.10
23.0
0.2
36.6
4.6
0.68
61.3
58.6
13.6
-10.5
2.66
11.5
0.10
23.0
0.2
36.9
4.9
0.70
61.1
58.6
13.9
-10.5
2.66
12.0
0.10
23.0
0.2
37.2
5.2
0.72
60.9
58.6
14.2
-10.6
2.66
12.5
0.11
23.0
0.2
37.4
5.5
0.73
60.5
58.3
14.4
-10.7
2.66
13.0
0.11
23.0
0.2
37.7
5.8
0.75
60.1
58.1
14.7
-10.7
Pin
Pout
Vgg Vdd Idq
(V) (V) (mA)
- AN-900-043-A-
Application Note for Silicon RF Power Semiconductors
16/16
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