MITSUBISHI AN-900-040-A User Manual
Silicon RF Power Semiconductors
SUBJECT: RD01MUS1 & RD07MUS2B 2-Stage amplifier RF performance at
SUMMARY:
APPLICATION NOTE
Document NO. AN-900-040-A
Date : 6th Aug.. 2009
Rev.date : 30
Prepared : K.Ijuin
S.Kametani
Confirmed : T.Okawa
f=763-870MHz,Vdd=7.2V
This application note shows the RF Wide band characteristics data
th
Jun. 2010
- Sample history :
RD07MUS2B: Lot number “086ZE-G”
RD01MUS1: Lot number “PB1”
- Evaluate conditions :
RD07MUS2B @Vdd=7.2V, Idq=250mA (Vgg=3.5V)
RD01MUS1 @Vdd=7.2V, Idq=100mA (Vgg=3.5V)
- Results :
Page 2-5 shows the typical RF characteristics (Po,Gp,Idd,effi vs. Frequency )
Page 6-8 shows the typical RF characteristics (Po,Gp,Idd,effi vs. Pin)
Page 9-10 shows the typical RF characteristics (Po,Idd,effi vs Vgg)
Page 11-12 shows the Equivalent Circuit
Application Note for Silicon RF Power Semiconductors
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RD01MUS1 & RD07MUS2B 2-Stage amplifier RF performance at f=763-870MHz,Vdd=7.2V
- AN-900-040-A -
[Frequency Characteristics 1 ]
Po=5W, 3.8W (Vgg Control), @Vdd=7.2V, Pi=50mW
2.0
1.8
@Po=5W
1.6
1.4
Idd (A)
1.2
1.0
@Po=3.8W
0.8
760 780 800 820 840 860 880 900
f (MHz)
65
60
55
4
3.6
3.2
Vgg (V)
2.8
2.4
2
760 780 800 820 840 860 880 900
f (MHz)
25
23
21
ηd (%)
50
45
40
760 780 800 820 840 860 880 900
f (MHz)
Gp (dB)
19
17
15
760 780 800 820 840 860 880 900
f (MHz)
Application Note for Silicon RF Power Semiconductors
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RD01MUS1 & RD07MUS2B 2-Stage amplifier RF performance at f=763-870MHz,Vdd=7.2V
f
f
- AN-900-040-A -
Frequency Characteristics 1 data
Po=5W
, @Vdd=7.2V, Pi=50mW
Vgg Gp Ids ηd P.A.E. 2fo 3fo
(MHz) (V) (dB) (A) (%) (%) (dBc) (dBc)
750 2.82 20.0 1.45 47.9 47.4 -49.0 -66.0
760 2.84 20.0 1.43 48.5 48.0 -52.0 -67.0
763 2.84 20.0 1.43 48.6 48.1 -52.0 -67.0
770 2.86 20.0 1.43 48.7 48.2 -54.0 -66.0
780 2.87 20.0 1.43 48.6 48.2 -55.0 -65.0
790 2.88 20.0 1.42 48.8 48.3 -57.0 -64.0
800 2.86 20.0 1.41 49.4 48.9 -58.0 -67.0
810 2.84 20.0 1.38 50.6 50.1 -59.0 -69.0
817 2.80 20.0 1.34 51.8 51.2 -62.0 -69.0
820 2.79 20.0 1.33 52.4 51.8 -62.0 -69.0
830 2.73 20.0 1.27 54.6 54.1 -59.0 -68.0
840 2.67 20.0 1.23 56.7 56.1 -58.0 -69.0
850 2.59 20.0 1.19 58.5 57.9 -59.0 <-70
860 2.51 20.0 1.17 59.5 58.9 -58.0 <-70
870 2.48 20.0 1.17 59.6 59.0 -57.0 -69.0
880 2.63 20.0 1.18 58.6 58.0 -57.0 -68.0
890 3.00 20.0 1.24 56.0 55.5 -58.0 -67.0
900
3.37
20.0 1.32 52.8 52.3 -59.0 -67.0
Po=3.8W, @Vdd=7.2V, Pi=50mW
Vgg Gp Ids ηd P.A.E. 2fo 3fo
(MHz) (V) (dB) (A) (%) (%) (dBc) (dBc)
750 2.66 18.8 1.23 43.0 42.4 -48.0 -67.0
760 2.70 18.8 1.21 43.5 43.0 -49.0 -70.0
763 2.71 18.8 1.21 43.6 43.0 -50.0 -70.0
770 2.73 18.8 1.21 43.8 43.2 -51.0 -69.0
780 2.75 18.8 1.21 43.7 43.1 -52.0 -65.0
790 2.75 18.8 1.20 43.8 43.2 -53.0 -66.0
800 2.75 18.8 1.19 44.2 43.7 -55.0 -68.0
810 2.72 18.8 1.17 45.3 44.7 -56.0 <-70
817 2.70 18.8 1.14 46.4 45.8 -58.0 <-70
820 2.68 18.8 1.12 46.9 46.3 -59.0 <-70
830 2.62 18.8 1.08 49.0 48.3 -59.0 <-70
840 2.55 18.8 1.03 51.4 50.7 -57.0 <-70
850 2.46 18.8 0.99 53.5 52.8 -58.0 <-70
860 2.37 18.8 0.96 54.9 54.2 -58.0 <-70
870 2.31 18.8 0.95 55.4 54.7 -57.0 <-70
880 2.35 18.8 0.96 55.0 54.3 -57.0 <-70
890 2.56 18.8 0.99 53.4 52.7 -57.0 <-70
900
2.90
18.8 1.04 50.9 50.2 -57.0 <-70
Application Note for Silicon RF Power Semiconductors
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RD01MUS1 & RD07MUS2B 2-Stage amplifier RF performance at f=763-870MHz,Vdd=7.2V
- AN-900-040-A -
[Frequency Characteristics 2 ]
Pin=50mW, 30mW, @Vdd=7.2V, Vgg=3.5V (Idq1=100mA, Idq2=250mA)
10
9
8
7
6
5
Po (W)
Gp (dB)
@Pin=30mW
4
3
2
1
0
760 780 800 820 840 860 880 900
25
23
21
19
17
f (MHz)
@Pin=50mW
42
40
38
36
Po (dBm)
34
32
30
760 780 800 820 840 860 880 900
f (MHz)
2.8
2.4
2.0
1.6
Ids (A)
1.2
0.8
0.4
15
760 780 800 820 840 860 880 900
f (MHz)
70
60
50
40
30
ηd (%)
20
10
0
760 780 800 820 840 860 880 900
f (MHz)
0.0
760 780 800 820 840 860 880 900
f (MHz)
Application Note for Silicon RF Power Semiconductors
4/12
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