MITSUBISHI AN-900-040-A User Manual

Silicon RF Power Semiconductors

SUBJECT: RD01MUS1 & RD07MUS2B 2-Stage amplifier RF performance at

SUMMARY:

APPLICATION NOTE

Document NO. AN-900-040-A

Date : 6th Aug.. 2009

Rev.date : 30

Prepared : K.Ijuin

S.Kametani

Confirmed : T.Okawa

f=763-870MHz,Vdd=7.2V

This application note shows the RF Wide band characteristics data

th

Jun. 2010

- Sample history :

RD07MUS2B: Lot number “086ZE-G”

RD01MUS1: Lot number “PB1”

- Evaluate conditions :

RD07MUS2B @Vdd=7.2V, Idq=250mA (Vgg=3.5V)

RD01MUS1 @Vdd=7.2V, Idq=100mA (Vgg=3.5V)

- Results :

Page 2-5 shows the typical RF characteristics (Po,Gp,Idd,effi vs. Frequency )

Page 6-8 shows the typical RF characteristics (Po,Gp,Idd,effi vs. Pin)

Page 9-10 shows the typical RF characteristics (Po,Idd,effi vs Vgg)

Page 11-12 shows the Equivalent Circuit

Application Note for Silicon RF Power Semiconductors

1/12

RD01MUS1 & RD07MUS2B 2-Stage amplifier RF performance at f=763-870MHz,Vdd=7.2V

- AN-900-040-A -

[Frequency Characteristics 1 ]

Po=5W, 3.8W (Vgg Control), @Vdd=7.2V, Pi=50mW

2.0

1.8

@Po=5W

1.6

1.4

Idd (A)

1.2

1.0

@Po=3.8W

0.8

760 780 800 820 840 860 880 900

f (MHz)

65

60

55

4

3.6

3.2

Vgg (V)

2.8

2.4

2

760 780 800 820 840 860 880 900

f (MHz)

25

23

21

ηd (%)

50

45

40

760 780 800 820 840 860 880 900

f (MHz)

Gp (dB)

19

17

15

760 780 800 820 840 860 880 900

f (MHz)

Application Note for Silicon RF Power Semiconductors

2/12

RD01MUS1 & RD07MUS2B 2-Stage amplifier RF performance at f=763-870MHz,Vdd=7.2V

f

f

- AN-900-040-A -

Frequency Characteristics 1 data

Po=5W

, @Vdd=7.2V, Pi=50mW

Vgg Gp Ids ηd P.A.E. 2fo 3fo

(MHz) (V) (dB) (A) (%) (%) (dBc) (dBc)

750 2.82 20.0 1.45 47.9 47.4 -49.0 -66.0
760 2.84 20.0 1.43 48.5 48.0 -52.0 -67.0

763 2.84 20.0 1.43 48.6 48.1 -52.0 -67.0
770 2.86 20.0 1.43 48.7 48.2 -54.0 -66.0
780 2.87 20.0 1.43 48.6 48.2 -55.0 -65.0
790 2.88 20.0 1.42 48.8 48.3 -57.0 -64.0
800 2.86 20.0 1.41 49.4 48.9 -58.0 -67.0
810 2.84 20.0 1.38 50.6 50.1 -59.0 -69.0
817 2.80 20.0 1.34 51.8 51.2 -62.0 -69.0
820 2.79 20.0 1.33 52.4 51.8 -62.0 -69.0
830 2.73 20.0 1.27 54.6 54.1 -59.0 -68.0
840 2.67 20.0 1.23 56.7 56.1 -58.0 -69.0
850 2.59 20.0 1.19 58.5 57.9 -59.0 <-70
860 2.51 20.0 1.17 59.5 58.9 -58.0 <-70
870 2.48 20.0 1.17 59.6 59.0 -57.0 -69.0
880 2.63 20.0 1.18 58.6 58.0 -57.0 -68.0
890 3.00 20.0 1.24 56.0 55.5 -58.0 -67.0
900

3.37

20.0 1.32 52.8 52.3 -59.0 -67.0

Po=3.8W, @Vdd=7.2V, Pi=50mW

Vgg Gp Ids ηd P.A.E. 2fo 3fo

(MHz) (V) (dB) (A) (%) (%) (dBc) (dBc)

750 2.66 18.8 1.23 43.0 42.4 -48.0 -67.0
760 2.70 18.8 1.21 43.5 43.0 -49.0 -70.0

763 2.71 18.8 1.21 43.6 43.0 -50.0 -70.0
770 2.73 18.8 1.21 43.8 43.2 -51.0 -69.0
780 2.75 18.8 1.21 43.7 43.1 -52.0 -65.0
790 2.75 18.8 1.20 43.8 43.2 -53.0 -66.0
800 2.75 18.8 1.19 44.2 43.7 -55.0 -68.0
810 2.72 18.8 1.17 45.3 44.7 -56.0 <-70
817 2.70 18.8 1.14 46.4 45.8 -58.0 <-70
820 2.68 18.8 1.12 46.9 46.3 -59.0 <-70
830 2.62 18.8 1.08 49.0 48.3 -59.0 <-70
840 2.55 18.8 1.03 51.4 50.7 -57.0 <-70
850 2.46 18.8 0.99 53.5 52.8 -58.0 <-70
860 2.37 18.8 0.96 54.9 54.2 -58.0 <-70
870 2.31 18.8 0.95 55.4 54.7 -57.0 <-70
880 2.35 18.8 0.96 55.0 54.3 -57.0 <-70
890 2.56 18.8 0.99 53.4 52.7 -57.0 <-70
900

2.90

18.8 1.04 50.9 50.2 -57.0 <-70

Application Note for Silicon RF Power Semiconductors

3/12

RD01MUS1 & RD07MUS2B 2-Stage amplifier RF performance at f=763-870MHz,Vdd=7.2V

- AN-900-040-A -

[Frequency Characteristics 2 ]

Pin=50mW, 30mW, @Vdd=7.2V, Vgg=3.5V (Idq1=100mA, Idq2=250mA)

10

9

8

7

6

5

Po (W)

Gp (dB)

@Pin=30mW

4

3

2

1

0

760 780 800 820 840 860 880 900

25

23

21

19

17

f (MHz)

@Pin=50mW

42

40

38

36

Po (dBm)

34

32

30

760 780 800 820 840 860 880 900

f (MHz)

2.8

2.4

2.0

1.6

Ids (A)

1.2

0.8

0.4

15

760 780 800 820 840 860 880 900

f (MHz)

70

60

50

40

30

ηd (%)

20

10

0

760 780 800 820 840 860 880 900

f (MHz)

0.0

760 780 800 820 840 860 880 900

f (MHz)

Application Note for Silicon RF Power Semiconductors

4/12

RD01MUS1 & RD07MUS2B 2-Stage amplifier RF performance at f=763-870MHz,Vdd=7.2V

f

f

- AN-900-040-A -

Frequency Characteristics 2 data

Pi=50mW

, @Vdd=7.2V, Vgg=3.5V (Idq1=100mA, Idq2=250mA)

Po Po Gp Ids ηd P.A.E. 2fo 3fo

(MHz) (W) (dBm) (dB) (A) (%) (%) (dBc) (dBc)

750 8.50 39.3 22.3 2.12 55.8 55.5 -56.9 -61.3
760 8.44 39.3 22.3 2.09 56.2 55.8 -58.2 <-50
770 8.43 39.3 22.3 2.08 56.2 55.9 -59.8 -61.7
780 8.50 39.3 22.3 2.10 56.3 56.0 -59.0 -59.0
790 8.63 39.4 22.4 2.11 56.7 56.4 -58.3 -60.1
800 8.83 39.5 22.5 2.13 57.7 57.4 -58.7 -62.7
810 9.02 39.6 22.5 2.12 59.1 58.7 -60.7 <-50
820 9.09 39.6 22.6 2.09 60.4 60.1 -57.0 <-50
830 8.99 39.5 22.6 2.03 61.4 61.1 -57.0 <-50
840 8.77 39.4 22.5 1.98 61.6 61.2 <-50 <-50
850 8.51 39.3 22.3 1.94 61.0 60.6 <-50 <-50
860 8.05 39.1 22.0 1.86 60.3 59.9 -61.8 <-50
870 7.40 38.7 21.7 1.73 59.4 59.0 -59.8 <-50
880 6.72 38.3 21.3 1.62 57.6 57.2 -59.5 <-50
890 6.01 37.8 20.8 1.51 55.1 54.7 -59.5 <-50
900 5.26 37.2 20.2 1.40 52.0 51.5 <-50 <-50

Pi=30mW

, @Vdd=7.2V, Vgg=3.5V (Idq1=100mA, Idq2=250mA)

Po Po Gp Ids ηd P.A.E. 2fo 3fo

(MHz) (W) (dBm) (dB) (A) (%) (%) (dBc) (dBc)

750 7.63 38.8 24.1 1.97 53.7 53.5 -56.6 <-50
760 7.45 38.7 23.9 1.92 53.8 53.6 -58.5 <-50
770 7.26 38.6 23.8 1.89 53.4 53.2 -62.8 <-50
780 7.21 38.6 23.8 1.88 53.3 53.1 <-50 <-50
790 7.22 38.6 23.9 1.88 53.5 53.3 <-50 <-50
800 7.40 38.7 24.0 1.88 54.5 54.3 <-50 <-50
810 7.67 38.8 24.1 1.89 56.3 56.1 <-50 <-50
820 7.93 39.0 24.2 1.88 58.5 58.3 -58.4 <-50
830 8.05 39.1 24.3 1.86 60.3 60.1 -57.1 <-50
840 8.04 39.1 24.3 1.82 61.3 61.1 <-50 <-50
850 7.97 39.0 24.2 1.81 61.3 61.1 <-50 <-50
860 7.77 38.9 24.1 1.78 60.6 60.4 <-50 <-50
870 7.23 38.6 23.8 1.69 59.6 59.3 -59.3 <-50
880 6.55 38.2 23.4 1.58 57.8 57.5 -58.8 <-50
890 5.81 37.6 22.9 1.47 55.1 54.8 -59.2 <-50
900 5.00 37.0 22.2 1.35 51.6 51.3 -59.4 <-50

Application Note for Silicon RF Power Semiconductors

5/12

RD01MUS1 & RD07MUS2B 2-Stage amplifier RF performance at f=763-870MHz,Vdd=7.2V

- AN-900-040-A -

[Pin vs. Pout Characteristics ]

f=763 MHz

12

10

8

6

Po (W)

4

2

0

0.000 0.020 0.040 0.060 0.080 0.100

35

30

25

20

15

Gp (dB)

10

5

, 817MHz, 870MHz, @Vdd=7.2V, Vgg=3.5V (Idq1=100mA, Idq2=250mA)

@f=817MHz

Pi (W)

@f=763MHz

@f=870MHz

45

40

35

30

25

20

Po (dBm)

15

10

5

0

0 5 10 15 20

Pi (dBm)

2.4

2.0

1.6

1.2

Ids (A)

0.8

0.4

0

0 5 10 15 20

Pi (dBm)

80

70

60

50

40

ηd(%)

30

20

10

0

0 5 10 15 20

Pi (dBm)

0.0
0 5 10 15 20

Pi (dBm)

Application Note for Silicon RF Power Semiconductors

6/12

RD01MUS1 & RD07MUS2B 2-Stage amplifier RF performance at f=763-870MHz,Vdd=7.2V

- AN-900-040-A -

Pin vs. Pout Characteristics data

f=763MHz

, @Vgg=3.5V (Idq1=100mA, Idq2=250mA)

Vds Pi Pi Po Po Gp Ids ηd P.A.E.

(V) (W) (dBm) (W) (dBm) (dB) (A) (%) (%)

7.23 0.001 0.0 0.565 27.5 27.6 0.60 13.0 13.0

7.23 0.001 1.0 0.714 28.5 27.6 0.65 15.2 15.2

7.23 0.002 2.0 0.896 29.5 27.6 0.71 17.5 17.5

7.23 0.002 2.9 1.127 30.5 27.6 0.77 20.2 20.1

7.23 0.002 4.0 1.425 31.5 27.6 0.85 23.2 23.2

7.23 0.003 5.0 1.796 32.5 27.6 0.94 26.5 26.4

7.22 0.004 6.0 2.248 33.5 27.6 1.04 30.0 30.0

7.22 0.005 7.0 2.804 34.5 27.5 1.15 33.9 33.9

7.22 0.006 8.0 3.460 35.4 27.4 1.26 37.9 37.9

7.22 0.008 9.0 4.218 36.3 27.3 1.39 42.0 41.9

7.21 0.010 10.0 5.021 37.0 27.0 1.52 45.7 45.6

7.21 0.013 11.0 5.800 37.6 26.6 1.65 48.7 48.6

7.21 0.016 12.0 6.532 38.2 26.2 1.77 51.2 51.1

7.21 0.020 13.0 7.212 38.6 25.6 1.88 53.3 53.1

7.21 0.025 14.0 7.790 38.9 24.9 1.97 54.8 54.6

7.20 0.032 15.0 8.248 39.2 24.2 2.05 55.9 55.7

7.20 0.040 16.0 8.593 39.3 23.3 2.11 56.6 56.3

7.20 0.050 17.0 8.867 39.5 22.4 2.16 57.1 56.8

7.20 0.064 18.1 9.100 39.6 21.5 2.20 57.5 57.1

7.20 0.081 19.1 9.296 39.7 20.6 2.23 57.8 57.3

7.20 0.103 20.1 9.457 39.8 19.6 2.26 58.0 57.4

f=817MHz

, @Vgg=3.5V (Idq1=100mA, Idq2=250mA)

Vds Pi Pi Po Po Gp Ids ηd P.A.E.

(V) (W) (dBm) (W) (dBm) (dB) (A) (%) (%)

7.23 0.001 0.0 0.565 27.5 27.6 0.60 13.0 13.0

7.23 0.001 1.0 0.714 28.5 27.6 0.65 15.2 15.2

7.23 0.002 2.0 0.896 29.5 27.6 0.71 17.5 17.5

7.23 0.002 2.9 1.127 30.5 27.6 0.77 20.2 20.1

7.23 0.002 4.0 1.425 31.5 27.6 0.85 23.2 23.2

7.23 0.003 5.0 1.796 32.5 27.6 0.94 26.5 26.4

7.22 0.004 6.0 2.248 33.5 27.6 1.04 30.0 30.0

7.22 0.005 7.0 2.804 34.5 27.5 1.15 33.9 33.9

7.22 0.006 8.0 3.460 35.4 27.4 1.26 37.9 37.9

7.22 0.008 9.0 4.218 36.3 27.3 1.39 42.0 41.9

7.21 0.010 10.0 5.021 37.0 27.0 1.52 45.7 45.6

7.21 0.013 11.0 5.800 37.6 26.6 1.65 48.7 48.6

7.21 0.016 12.0 6.532 38.2 26.2 1.77 51.2 51.1

7.21 0.020 13.0 7.212 38.6 25.6 1.88 53.3 53.1

7.21 0.025 14.0 7.790 38.9 24.9 1.97 54.8 54.6

7.20 0.032 15.0 8.248 39.2 24.2 2.05 55.9 55.7

7.20 0.040 16.0 8.593 39.3 23.3 2.11 56.6 56.3

7.20 0.050 17.0 8.867 39.5 22.4 2.16 57.1 56.8

7.20 0.064 18.1 9.100 39.6 21.5 2.20 57.5 57.1

7.20 0.081 19.1 9.296 39.7 20.6 2.23 57.8 57.3

7.20 0.103 20.1 9.457 39.8 19.6 2.26 58.0 57.4

Application Note for Silicon RF Power Semiconductors

7/12

RD01MUS1 & RD07MUS2B 2-Stage amplifier RF performance at f=763-870MHz,Vdd=7.2V

- AN-900-040-A -

f=870MHz

, @Vgg=3.5V (Idq1=100mA, Idq2=250mA)

Vds Pi Pi Po Po Gp Ids ηd P.A.E.

(V) (W) (dBm) (W) (dBm) (dB) (A) (%) (%)

7.23 0.001 0.0 1.262 31.0 31.0 0.66 26.3 26.3

7.23 0.001 1.0 1.591 32.0 31.0 0.73 30.4 30.3

7.23 0.002 2.0 2.002 33.0 31.0 0.80 34.8 34.8

7.23 0.002 3.0 2.495 34.0 31.0 0.87 39.5 39.5

7.22 0.002 4.0 3.051 34.8 30.9 0.96 44.0 44.0

7.22 0.003 5.0 3.673 35.7 30.7 1.05 48.3 48.3

7.22 0.004 6.0 4.277 36.3 30.3 1.15 51.6 51.5

7.22 0.005 7.0 4.860 36.9 29.9 1.24 54.2 54.1

7.22 0.006 8.0 5.386 37.3 29.3 1.33 56.1 56.0

7.22 0.008 9.0 5.846 37.7 28.7 1.41 57.5 57.4

7.21 0.010 10.0 6.252 38.0 28.0 1.48 58.4 58.3

7.21 0.012 11.0 6.579 38.2 27.2 1.55 59.0 58.9

7.21 0.016 12.0 6.843 38.4 26.4 1.60 59.3 59.2

7.21 0.020 13.0 7.026 38.5 25.5 1.64 59.4 59.3

7.21 0.025 14.0 7.154 38.5 24.6 1.67 59.5 59.3

7.21 0.031 15.0 7.254 38.6 23.6 1.69 59.5 59.2

7.21 0.040 16.0 7.336 38.7 22.7 1.71 59.4 59.1

7.21 0.050 17.0 7.403 38.7 21.7 1.73 59.4 59.0

7.21 0.064 18.0 7.458 38.7 20.7 1.74 59.3 58.8

7.21 0.080 19.0 7.504 38.8 19.7 1.76 59.2 58.6

7.21 0.102 20.1 7.546 38.8 18.7 1.77 59.2 58.4

Application Note for Silicon RF Power Semiconductors

8/12

RD01MUS1 & RD07MUS2B 2-Stage amplifier RF performance at f=763-870MHz,Vdd=7.2V

- AN-900-040-A -

[Vgg vs. Pout Characteristics ]

f=763 MHz, 817MHz, 870MHz, @Vdd=7.2V, Pin=50mW

12

10

8

6

Po (W)

4

2

0

70

60

50

40

870MHz

1.6 2 2.4 2.8 3.2 3.6 4

817MHz

763MHz

Vgg (V)

3.0

2.5

2.0

1.5

Ids (A)

1.0

0.5

0.0

1.6 2 2.4 2.8 3.2 3.6 4

Vgg (V)

ηd(%)

30

20

10

0

1.6 2 2.4 2.8 3.2 3.6 4

Vgg (V)

Application Note for Silicon RF Power Semiconductors

9/12

RD01MUS1 & RD07MUS2B 2-Stage amplifier RF performance at f=763-870MHz,Vdd=7.2V

- AN-900-040-A -

Vgg vs. Pout Characteristics data

f=763MHz

Vgg Po Po Ids ηd P.A.E.

(V) (W) (dBm) (A) (%) (%)

1.9 0.010 10.2 0.07 1.9 -7.3

2.0 0.070 18.5 0.17 5.9 1.6

2.2 0.417 26.2 0.38 15.1 13.3

2.4 1.307 31.2 0.68 26.6 25.6

2.6 2.910 34.6 1.04 38.7 38.0

2.8 4.609 36.6 1.36 47.0 46.5

3.0 6.162 37.9 1.64 52.0 51.6

3.2 7.408 38.7 1.88 54.8 54.5

3.4 8.409 39.2 2.07 56.5 56.1

3.5 8.835 39.5 2.15 57.0 56.7

3.6 9.228 39.7 2.23 57.4 57.1

3.8 9.914 40.0 2.39 57.7 57.4

4.0 10.471 40.2 2.52 57.7 57.4

f=817MHz

Vgg Po Po Ids ηd P.A.E.

(V) (W) (dBm) (A) (%) (%)

2.0 0.015 11.7 0.09 2.3 -5.4

2.1 0.085 19.3 0.18 6.6 2.7

2.2 0.250 24.0 0.29 11.9 9.5

2.4 1.087 30.4 0.59 25.4 24.3

2.6 2.807 34.5 0.96 40.3 39.6

2.8 4.970 37.0 1.34 51.5 51.0

3.0 6.832 38.3 1.66 57.2 56.8

3.2 8.148 39.1 1.90 59.7 59.3

3.4 9.102 39.6 2.08 60.7 60.3

3.5 9.514 39.8 2.17 60.9 60.6

3.6 9.819 39.9 2.24 60.9 60.6

3.8 10.363 40.2 2.37 60.7 60.4

4.0 10.790 40.3 2.49 60.2 59.9

f=870MHz

Vgg Po Po Ids ηd P.A.E.

(V) (W) (dBm) (A) (%) (%)

1.7 0.010 10.1 0.06 2.3 -8.7

1.8 0.113 20.5 0.16 9.5 5.3

2.0 0.899 29.5 0.44 28.5 26.9

2.2 2.720 34.3 0.78 48.6 47.7

2.4 4.517 36.5 1.08 58.1 57.4

2.6 5.608 37.5 1.28 60.6 60.1

2.8 6.256 38.0 1.42 61.1 60.6

3.0 6.675 38.2 1.52 60.9 60.4

3.2 7.001 38.5 1.61 60.4 59.9

3.4 7.279 38.6 1.69 59.8 59.4

3.5 7.404 38.7 1.73 59.4 59.0

3.6 7.511 38.8 1.77 58.9 58.5

3.8 7.721 38.9 1.85 57.9 57.6

4.0 7.912 39.0 1.93 56.8 56.5

, @Pin=50mW

, @Pin=50mW

, @Pin=50mW

Application Note for Silicon RF Power Semiconductors

10/12

RD01MUS1 & RD07MUS2B 2-Stage amplifier RF performance at f=763-870MHz,Vdd=7.2V

p

p

p

φ

)

φ

)

φ

)

V

- AN-900-040-A -

equivalent circuit(@f=763 to 870MHz)

RF-in

Vgg(=3.5V)

R6

R2

C16

1mm

C1

C2

3mm

L1 1mm

R3

L3

C18

19mm

3.5mm

W

6.5mm C51.5mm

C17

C3

2.5mm

19mm

W

RD01MUS1 C15

R1

3mm

C19

L2

C4

C20

19mm

11.5mm

W

R4

0.5mm

C6

C21

C22

1mm

Note:Board material- Glass-Epoxy Substrate
Micro st r i p line widt h= 1. 3 mm /50OHM, er :4. 8, t =0.8mm
W:Line width= 1.0mm

Parts Type Value Type name

Capacitor

Resistance

Inductance

C1 100pF GRM2162C1H101JA01D
C2 3pF GRM1882C1H3R0CZ01D
C3 9pF GRM1882C1H9R0DZ01D
C4 6pF GRM1882C1H6R0DZ01D
C5 15pF GRM1882C1H150JA01D
C6 10pF GRM1882C1H100JA01D
C7 12pF GRM1882C1H120JA01D
C8 10pF GRM1882C1H100JA01D

C9 10pF GRM1882C1H100JA01D
C10 8pF GRM1882C1H8R0DZ01D
C11 8pF GRM1882C1H8R0DZ01D
C12 4pF GRM1882C1H4R0CZ01D
C13 3pF GRM1882C1H3R0CZ01D
C14 1pF GRM1882C1H1R0CZ01D
C15 100pF GRM2162C1H101JA01D
C16 22000pF GRM216R11H223KA01E
C17 1000pF

GRM188R11H102KA01E
C18 22000pF GRM216R11H223KA01E
C19 1000pF

GRM188R11H102KA01E
C20 22µF
C21 22000
C22 1000
C23 22000
C24 1000pF
C25

F GRM216R11H223KA01E

F

GRM188R11H102KA01E

F GRM216R11H223KA01E

GRM188R11H102KA01E

22µF A0603
R1 1.8K OHM RPC05-182
R2 56K OHM RPC05-563 Taiyosha Electric Co.,Ltd.
R3 20K OHM RPC05-203 Taiyosha Electric Co.,Ltd.
R4 4.7K OHM CR1/10-472JB Hokuriku Electric Industry Co.,Ltd.
R5 15K OHM RPC05-153 Taiyosha Electric Co.,Ltd.
R6 20K OHM RPC05-203 Taiyosha Electric Co.,Ltd.

L1 8.2nH(Chip Inductor)

L2

Diameter:0.23mm,

L3

Diameter:0.23mm,

L4

Diameter:0.23mm,

37.8nH Enameled wire 7Turns,

1.6mm (the out side diameter

6.6nH Enameled wire 2Turns,

1.66mm (the out side diameter

37.8nH Enameled wire 7Turns,

1.6mm (the out side diameter

LQG11A8N2S00

Vdd(=7.2V)

C24

C7

R5

RD07MUS2B

1mm

19mm

W

C10

C8

1mm1mm

C9

7.5mm

C11

L4

2.5mm 6mm

C12

C25C23

1mm

C13

ender

Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.

A0603 NICHICON CORPORATION

Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.

NICHICON CORPORATION

Taiyosha Electric Co.,Ltd.

Murata Manufacturing Co., Ltd.

2307A Yoneda Processing Place Co.,Ltd.

2302S Yoneda Processing Place Co.,Ltd.

2307A Yoneda Processing Place Co.,Ltd.

RF-out

19mm

C14

Application Note for Silicon RF Power Semiconductors

11/12

RD01MUS1 & RD07MUS2B 2-Stage amplifier RF performance at f=763-870MHz,Vdd=7.2V

- AN-900-040-A -

Vgg(=3.5V)

Vdd(=7.2V)

GND

RF-in

Vdd Vdd

VggVgg

GND

RF-out

Application Note for Silicon RF Power Semiconductors

12/12