Silicon RF Power Semiconductors
SUBJECT: RD05MMP1 Single-Stage amplifier RF performance at f=800-900MHz,Vdd=7.2V
SUMMARY:
APPLICATION NOTE
Document NO. AN-900-030-A
Date : 25th Sep. ‘07
th
Rev.date : 30
Prepared : H. Sakairi
S. Kametani
Confirmed : T.Okawa
This application note shows the RF Wide band characteristics data
(Pout vs. Frequency characteristics, Pout vs. Pin characteristics) at 800-900 MHz Band.
- Sample history :
Jun. 2010
RD05MMP1: Lot number “ 064XA-G ”
- Evaluate conditions :
RD05MMP1 @f=800-900MHz : Vds=7.2V, Idq=1.0A (Vgs adjust)
- Results :
Page 2 shows the typical RF characteristics (Pout vs. Frequency characteristics) data.
Page 3-4 shows the typical RF characteristics (Pout vs. Pin characteristics) data.
Page 5 shows the Equivalent Circuit.
Application Note for Silicon RF Power Semiconductors
1/5
RD05MMP1 Single-Stage amplifier RF performance at f=800-900MHz,Vdd=7.2V
Pin=0.7W, Vds=7.2V, Idq=1.0A (V
Adj
)
9005.02
1.51
46.67.2
2
2
Po=5W C
Adj
7W
900
2.61
1.53
45.3
7.4
2.5-45.2-57.8
- AN-900-030-A -
RD05MMP1 Single-Stage amplifier Frequency Characteristics f=800-900MHz.
gs
fPoutIdsEdRL
(MH z) (W) (A) (% ) (dB ) (-) (dB ) (dB )
750 5.90 2.27 36.3 12.0 1.7 -39.4 -60.8
760 6.25 2.24 39.0 12.7 1.6 -41.2 -61.9
770 6.50 2.20 41.3 13.2 1.6 -45.2 -62.9
780 6.71 2.15 43.6 13.9 1.5 -46.7 -60.6
790 6.90 2.12 45.6 14.6 1.5 -48.4 -59.4
800 6.91 2.06 46.8 15.4 1.4 -50.8 -58.7
810 6.98 2.02 48.2 16.0 1.4 -53.0 -58.8
820 7.07 1.99 49.6 16.2 1.4 -53.3 -58.4
830 6.90 1.93 50.1 16.2 1.4 -54.9 -57.2
840 6.85 1.88 51.1 15.6 1.4 -56.4 -57.2
850 6.84 1.84 52.1 14.3 1.5 -56.4 -58.0
860 6.51 1.75 52.1 13.3 1.5 -52.9 -57.6
870 6.29 1.69 52.2 11.6 1.7 -49.9 -58.4
880 6.03 1.64 51.4 9.7 2.0 -47.5 -57.9
890 5.45 1.55 49.1 8.5 2.2 -46.4 -58.6
ust
VSWR in
2SP 3SP
.5 -45.6-59.
Frequency Characteristic (Idq=1.0A )
10
9
8
7
6
5
4
3
2
Pout(W).VSWR in(-)
1
0
750
Pout
VSWR in
Ed
800
f(MHz)
850
900
100
90
80
70
60
50
40
30
20
10
0
Ed(%)
fVgsIdsEdRL
(MH z) (V) (A) (% ) (dB ) (-) (dB ) (dB )
750 2.57 1.96 36.0 10.7 1.8 -36.4 -59.7
760 2.50 1.85 38.1 11.0 1.8 -37.1 -61.9
770 2.42 1.75 40.2 11.2 1.8 -39.6 -63.1
780 2.35 1.67 42.3 11.4 1.7 -40.4 -62.7
790 2.28 1.59 44.3 11.6 1.7 -40.6 -62.6
800 2.28 1.53 45.8 12.2 1.7 -40.9 -60.8
810 2.26 1.49 47.3 12.6 1.6 -42.3 -60.3
820 2.21 1.44 49.0 12.6 1.6 -43.0 -60.0
830 2.22 1.39 49.8 12.8 1.6 -43.9 -59.7
840 2.22 1.36 51.2 12.5 1.6 -45.0 -59.3
850 2.21 1.34 52.7 12.0 1.7 -46.4 -58.7
860 2.31 1.31 53.2 11.9 1.7 -49.6 -58.4
870 2.31 1.28 54.2 10.7 1.8 -51.7 -58.2
880 2.35 1.28 54.2 9.3 2.0 -65.0 -58.1
890 2.61 1.38 50.3 8.5 2.2 -51.3 -58.4
onstant, Vgs
ustment, Vds=7.2V, Pin=0.
VSWR in
2SP 3SP
Frequency Characteristic (Po=5W)
10
9
8
7
6
5
4
VSWR in(-)
3
2
1
0
750
VSWR in
Ed
800
f(M H z)
850
900
100
90
80
70
60
50
40
30
20
10
0
Ed(%)
Application Note for Silicon RF Power Semiconductors
2/5
RD05MMP1 Single-Stage amplifier RF performance at f=800-900MHz,Vdd=7.2V
p
d
)
)
)(A)(%)
5
5
2
5
p
d
)
)
)(A)(%)
5
2
5
2
5
2
2
5
5
5
RD05MMP1 Single-Stage amplifier Pout vs. Pin characteristics
f=764MHz, Vds=7.2V, Idq=1.0A(Vgs Adjust)
- AN-900-030-A -
PoutPin
(dB m) (W
10.0 0.01 21.06 0.13 11.06 1.01 1.76
11.0 0.01 22.03 0.16 11.03 1.02 2.17
12.0 0.02 23.01 0.20 11.01 1.03 2.70
13.0 0.02 24.07 0.26 11.07 1.04 3.41
14.0 0.03 25.06 0.32 11.06 1.05 4.24
15.0 0.03 26.03 0.40 11.03 1.07 5.22
16.0 0.04 27.01 0.50 11.01 1.08 6.44
17.0 0.05 27.97 0.63 10.97 1.11 7.86
18.0 0.06 28.98 0.79 10.98 1.14 9.67
19.0 0.08 29.96 0.99 10.96 1.17 11.7
20.0 0.10 30.91 1.23 10.91 1.21 14.11
21.0 0.13 31.85 1.53 10.8
22.0 0.16 32.76 1.89 10.76 1.34 19.54
23.0 0.20 33.68 2.33 10.68 1.42 22.76
24.0 0.25 34.56 2.86 10.56 1.53 25.97
25.0 0.32 35.48 3.53 10.48 1.67 29.40
26.0 0.40 36.25 4.22 10.2
27.0 0.50 37.03 5.05 10.03 1.97 35.50
28 .0 0.63 37.73 5.9 3 9.73 2.1 5 38.2 8
29 .0 0.79 38.36 6.8 5 9.36 2.3 3 40.8 6
30 .0 1.00 38.92 7.8 0 8.92 2.5 1 43.1 0
f=800MHz, Vds=7.2V, Idq=1.0A(Vgs Adjust)
Pin Pout
(dB m) (W
10.0 0.01 21.65 0.15 11.6
11.0 0.01 22.62 0.18 11.6
12.0 0.02 23.60 0.23 11.60 1.04 3.06
13.0 0.02 24.65 0.29 11.6
14.0 0.03 25.63 0.37 11.63 1.06 4.80
15.0 0.03 26.62 0.46 11.6
16.0 0.04 27.60 0.58 11.60 1.08 7.38
17.0 0.05 28.57 0.72 11.57 1.10 9.07
18.0 0.06 29.55 0.90 11.5
19.0 0.08 30.53 1.13 11.53 1.15 13.6
20.0 0.10 31.49 1.41 11.49 1.19 16.47
21.0 0.13 32.43 1.75 11.43 1.23 19.7
22.0 0.16 33.35 2.16 11.3
23.0 0.20 34.31 2.70 11.31 1.37 27.3
24.0 0.25 35.18 3.30 11.18 1.46 31.37
25.0 0.32 35.99 3.97 10.99 1.57 35.16
26.0 0.40 36.81 4.80 10.81 1.72 38.8
27.0 0.50 37.48 5.60 10.48 1.84 42.16
28.0 0.63 38.16 6.55 10.16 2.01 45.28
29 .0 0.79 38.78 7.5 5 9.78 2.1 8 48.1 6
30 .0 1.00 39.19 8.3 0 9.19 2.3 1 49.9 7
(dB m) (W
(dB m) (W
G
(dB
G
(dB
Ids E
1.27 16.7
1.81 32.38
Ids E
1.03 1.98
1.03 2.45
1.05 3.87
1.07 5.97
1.12 11.14
1.29 23.29
Pin vs. Pout, Gain & Ed(@f=764MHz,Vdd=7.2V)
60
Pout
50
Gp
Ed
40
30
20
Pout (dBm), Gp (dB)
10
0
10.0 15.0 20.0 25.0 30.0
Pin (dBm)
Pin vs. Pout, Gain & Ed(@f=800MHz,Vdd=7.2V)
60
Pout
50
Gp
Ed
40
30
20
Pout (dBm), Gp (dB)
10
0
10.0 15.0 20.0 25.0 30.0
Pin (dBm)
60
50
40
30
Ed (%)
20
10
0
60
50
40
30
Ed (%)
20
10
0
Application Note for Silicon RF Power Semiconductors
3/5
RD05MMP1 Single-Stage amplifier RF performance at f=800-900MHz,Vdd=7.2V
RD05MMP1 Single-Stage amplifier Pout vs. Pin Characteristics
f=850MHz, Vds=7.2V, Idq=1.0A(Vgs Adjust)
- AN-900-030-A -
PoutPin
Gp Ids Ed
(dBm) (W) (dBm) (W) (dB) (A) (%)
10.0 0.01 21.93 0.16 11.93 1.03 2.10
11.0 0.01 22.92 0.20 11.92 1.04 2.62
12.0 0.02 23.83 0.24 11.83 1.04 3.22
13.0 0.02 24.83 0.30 11.83 1.05 4.03
14.0 0.03 25.83 0.38 11.83 1.06 5.04
15.0 0.03 26.82 0.48 11.82 1.06 6.28
16.0 0.04 27.90 0.62 11.90 1.07 7.98
17.0 0.05 28.83 0.76 11.83 1.09 9.77
18.0 0.06 29.81 0.96 11.81 1.10 12.08
19.0 0.08 30.79 1.20 11.79 1.12 14.86
20.0 0.10 31.74 1.49 11.74 1.15 18.07
21.0 0.13 32.68 1.85 11.68 1.18 21.82
22.0 0.16 33.60 2.29 11.60 1.22 26.07
23.0 0.20 34.49 2.81 11.49 1.28 30.60
24.0 0.25 35.32 3.40 11.32 1.34 35.23
25.0 0.32 36.08 4.06 11.08 1.43 39.51
26.0 0.40 36.82 4.81 10.82 1.54 43.42
27.0 0.50 37.47 5.58 10.47 1.65 47.07
28.0 0.63 37.98 6.28 9.98 1.76 49.59
29.0 0.79 38.43 6.97 9.43 1.87 51.73
30.0 1.00 38.86 7.69 8.86 1.98 53.83
f=900MHz, Vds=7.2V, Idq=1.0A(Vgs Adjust)
Pin Pout
Gp Ids Ed
(dBm) (W) (dBm) (W) (dB) (A) (%)
10.0 0.01 23.07 0.20 13.07 1.03 2.72
11.0 0.01 24.15 0.26 13.15 1.04 3.47
12.0 0.02 25.04 0.32 13.04 1.05 4.24
13.0 0.02 26.15 0.41 13.15 1.05 5.45
14.0 0.03 27.13 0.52 13.13 1.06 6.80
15.0 0.03 28.11 0.65 13.11 1.06 8.46
16.0 0.04 29.08 0.81 13.08 1.07 10.49
17.0 0.05 30.02 1.00 13.02 1.08 12.90
18.0 0.06 30.98 1.25 12.98 1.09 15.90
19.0 0.08 31.89 1.55 12.89 1.11 19.32
20.0 0.10 32.75 1.88 12.75 1.13 23.12
21.0 0.13 33.53 2.25 12.53 1.16 27.04
22.0 0.16 34.24 2.65 12.24 1.19 30.95
23.0 0.20 34.86 3.06 11.86 1.23 34.55
24.0 0.25 35.40 3.47 11.40 1.27 37.78
25.0 0.32 35.85 3.85 10.85 1.32 40.37
26.0 0.40 36.26 4.23 10.26 1.38 42.40
27.0 0.50 36.58 4.55 9.58 1.44 43.92
28.0 0.63 36.87 4.86 8.87 1.50 45.12
29.0 0.79 37.13 5.16 8.13 1.55 46.19
30.0 1.00 37.34 5.42 7.34 1.60 46.97
Pin vs. Pout, Gain & Ed(@f=764MHz,Vdd=7.2V)
60
Pout
50
40
30
20
Pout (dBm), Gp (dB)
10
0
10.0 15.0 20.0 25.0 30.0
60
50
40
30
20
Pout (dBm), Gp (dB)
10
0
10.0 15.0 20.0 25.0 30.0
Gp
Ed
Pin (dBm)
Pin vs. Pout, Gain & Ed(@f=800MHz,Vdd=7.2V)
Pout
Gp
Ed
Pin (dBm)
60
50
40
30
Ed (%)
20
10
0
60
50
40
30
Ed (%)
20
10
0
Application Note for Silicon RF Power Semiconductors
4/5
RD05MMP1 Single-Stage amplifier RF performance at f=800-900MHz,Vdd=7.2V
r
M
y
W
W
RD05MMP1 Single-Stage amplifier Equivalent Circuit (@f=800-900MHz)
C12
C11
Vgs
16mm
Vds
16mm
C13
C14
- AN-900-030-A -
C15
4.7k Ohm
16mm
RF-in
C1
Note:Board m aterial= glass-Epoxy Substrate
Micro strip line w idth= 1.3mm/50OHM ,er=4.8 ,t=0.8mm
W:Line width=1.0mm
C2
Parts Numbe
C1
C2
C3
C4
C5
C6
C7
C8
C9
C10
C11
C12
C13
C14
C15
R1
L1
12mm
D:0.23mm, 1.37mm (outside
5.5mm
Capacit
150pF
4pF
8pF
8pF
8pF
8pF
3pF
1pF
1pF
150pF
100pF
1000pF
100pF
1000pF
22uF
4.7K OH
24.4nH
Enameled wire 5 Turns,
diameter)
C3
C4
1.5mm
C5
1.0mm
GRM 1882C1H151JA01
GRM 1882C1H4R0C Z01
GRM 1882C1H8R0D Z01
GRM 1882C1H8R0D Z01
GRM 1882C1H8R0D Z01
GRM 1882C1H8R0D Z01
GRM 1883C1G3R0C Z01
GRM 1884C1H1R0C Z01
GRM 1884C1H1R0C Z01
GRM 1882C1H151JA01
GRM 1882C1H101JA01
GRM 1882C1H102JA01
GRM 1882C1H101JA01
GRM 1882C1H102JA01
CR1/10-472JB
2.0mmC73.0mm
C6
typ e nam e
A0603
2305A
L1
9.5mm
corporation
urata Manufacturing Co ., Ltd
urata Manufacturing Co ., Ltd
urata Manufacturing Co ., Ltd
urata Manufacturing Co ., Ltd
urata Manufacturing Co ., Ltd
urata Manufacturing Co ., Ltd
urata Manufacturing Co ., Ltd
urata Manufacturing Co ., Ltd
urata Manufacturing Co ., Ltd
urata Manufacturing Co ., Ltd
urata Manufacturing Co ., Ltd
urata Manufacturing Co ., Ltd
urata Manufacturing Co ., Ltd
urata Manufacturing Co ., Ltd
NICHICON CORPORATION
Hoku riku Electric Industry C o .,L td.
Yoneda Processing Place Co.,Ltd.
14.0mm
C8
C9
4.5mm
RF-out
C10
Vgs
RF IN
Vds
RF OUT
RD05MMP1
(mounted back side of substrate)
Application Note for Silicon RF Power Semiconductors
5/5
Loading...