MITSUBISHI AN-900-030-A User Manual
Silicon RF Power Semiconductors
SUBJECT: RD05MMP1 Single-Stage amplifier RF performance at f=800-900MHz,Vdd=7.2V
SUMMARY:
APPLICATION NOTE
Document NO. AN-900-030-A
Date : 25th Sep. ‘07
th
Rev.date : 30
Prepared : H. Sakairi
S. Kametani
Confirmed : T.Okawa
This application note shows the RF Wide band characteristics data
(Pout vs. Frequency characteristics, Pout vs. Pin characteristics) at 800-900 MHz Band.
- Sample history :
Jun. 2010
RD05MMP1: Lot number “ 064XA-G ”
- Evaluate conditions :
RD05MMP1 @f=800-900MHz : Vds=7.2V, Idq=1.0A (Vgs adjust)
- Results :
Page 2 shows the typical RF characteristics (Pout vs. Frequency characteristics) data.
Page 3-4 shows the typical RF characteristics (Pout vs. Pin characteristics) data.
Page 5 shows the Equivalent Circuit.
Application Note for Silicon RF Power Semiconductors
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RD05MMP1 Single-Stage amplifier RF performance at f=800-900MHz,Vdd=7.2V
Pin=0.7W, Vds=7.2V, Idq=1.0A (V
Adj
)
9005.02
1.51
46.67.2
2
2
Po=5W C
Adj
7W
900
2.61
1.53
45.3
7.4
2.5-45.2-57.8
- AN-900-030-A -
RD05MMP1 Single-Stage amplifier Frequency Characteristics f=800-900MHz.
gs
fPoutIdsEdRL
(MH z) (W) (A) (% ) (dB ) (-) (dB ) (dB )
750 5.90 2.27 36.3 12.0 1.7 -39.4 -60.8
760 6.25 2.24 39.0 12.7 1.6 -41.2 -61.9
770 6.50 2.20 41.3 13.2 1.6 -45.2 -62.9
780 6.71 2.15 43.6 13.9 1.5 -46.7 -60.6
790 6.90 2.12 45.6 14.6 1.5 -48.4 -59.4
800 6.91 2.06 46.8 15.4 1.4 -50.8 -58.7
810 6.98 2.02 48.2 16.0 1.4 -53.0 -58.8
820 7.07 1.99 49.6 16.2 1.4 -53.3 -58.4
830 6.90 1.93 50.1 16.2 1.4 -54.9 -57.2
840 6.85 1.88 51.1 15.6 1.4 -56.4 -57.2
850 6.84 1.84 52.1 14.3 1.5 -56.4 -58.0
860 6.51 1.75 52.1 13.3 1.5 -52.9 -57.6
870 6.29 1.69 52.2 11.6 1.7 -49.9 -58.4
880 6.03 1.64 51.4 9.7 2.0 -47.5 -57.9
890 5.45 1.55 49.1 8.5 2.2 -46.4 -58.6
ust
VSWR in
2SP 3SP
.5 -45.6-59.
Frequency Characteristic (Idq=1.0A )
10
9
8
7
6
5
4
3
2
Pout(W).VSWR in(-)
1
0
750
Pout
VSWR in
Ed
800
f(MHz)
850
900
100
90
80
70
60
50
40
30
20
10
0
Ed(%)
fVgsIdsEdRL
(MH z) (V) (A) (% ) (dB ) (-) (dB ) (dB )
750 2.57 1.96 36.0 10.7 1.8 -36.4 -59.7
760 2.50 1.85 38.1 11.0 1.8 -37.1 -61.9
770 2.42 1.75 40.2 11.2 1.8 -39.6 -63.1
780 2.35 1.67 42.3 11.4 1.7 -40.4 -62.7
790 2.28 1.59 44.3 11.6 1.7 -40.6 -62.6
800 2.28 1.53 45.8 12.2 1.7 -40.9 -60.8
810 2.26 1.49 47.3 12.6 1.6 -42.3 -60.3
820 2.21 1.44 49.0 12.6 1.6 -43.0 -60.0
830 2.22 1.39 49.8 12.8 1.6 -43.9 -59.7
840 2.22 1.36 51.2 12.5 1.6 -45.0 -59.3
850 2.21 1.34 52.7 12.0 1.7 -46.4 -58.7
860 2.31 1.31 53.2 11.9 1.7 -49.6 -58.4
870 2.31 1.28 54.2 10.7 1.8 -51.7 -58.2
880 2.35 1.28 54.2 9.3 2.0 -65.0 -58.1
890 2.61 1.38 50.3 8.5 2.2 -51.3 -58.4
onstant, Vgs
ustment, Vds=7.2V, Pin=0.
VSWR in
2SP 3SP
Frequency Characteristic (Po=5W)
10
9
8
7
6
5
4
VSWR in(-)
3
2
1
0
750
VSWR in
Ed
800
f(M H z)
850
900
100
90
80
70
60
50
40
30
20
10
0
Ed(%)
Application Note for Silicon RF Power Semiconductors
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