Microsemi N3418, 2N3814S, 2N3419, 2N3419S, 2N3420 Technical data
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2N3418JAN
TECHNICAL DATA
NPN MEDUIM POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/393
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Qualified Level |
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2N3418 |
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2N3419 |
2N3420 |
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2N3421 |
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JAN |
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JANTX |
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2N3814S |
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2N3419S |
2N3420S |
2N3421S |
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JANTXV |
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MAXIMUM RATINGS |
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2N3418, S |
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2N3419, S |
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Ratings |
Symbol |
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2N3420, S |
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2N3421, S |
Unit |
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Collector-Emitter Voltage |
VCEO |
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60 |
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80 |
Vdc |
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Collector-Base Voltage |
VCBO |
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85 |
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125 |
Vdc |
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TO- 5* |
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Emitter-Base Voltage |
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VEBO |
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8.0 |
Vdc |
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2N3418, 2N3419, |
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Collector Current |
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IC |
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3.0 |
Adc |
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2N3420, 2N3421 |
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tP ≤ 1.0 ms, duty cycle ≤ 50% |
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5.0 |
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Total Power Dissipation @ TA = +250C(1) |
PT |
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1.0 |
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W |
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@ TC = +1000C(2) |
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15 |
W/0C |
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Operating & Storage Temperature Range |
Top, Tstg |
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-65 to +200 |
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0C |
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TO-39* (TO205-AD) |
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1) Derate linearly 5.72 mW/0C for TA > 250C |
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2) Derate linearly 150 mW/0C for TC > 1000C |
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2N3418S, 2N3419S, |
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2N3420S, 2N3421S |
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*See Appendix A for |
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Package Outline |
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ELECTRICAL CHARACTERISTICS |
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Characteristics |
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Symbol |
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Min. |
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Max. |
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Unit |
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OFF CHARACTERISTICS |
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Collector-Emitter Breakdown Current |
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IC = 50 mAdc, IB = 0 |
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2N3418, S; 2N3420, S |
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V(BR)CEO |
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60 |
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Vdc |
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2N3419, S; 2N3421, S |
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80 |
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Collector-Emitter Cutoff Current |
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ICEX |
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μAdc |
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VBE = -0.5 Vdc, VCE = 80 Vdc |
2N3418, S; 2N3420, S |
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0.3 |
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VBE = -0.5 Vdc, VCE = 120 Vdc |
2N3419, S; 2N3421, S |
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0.3 |
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Collector-Emitter Cutoff Current |
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μAdc |
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VCE = 45 Vdc, IB = 0 |
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2N3418, S; 2N3420, S |
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ICEO |
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5.0 |
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VCE = 60 Vdc, IB = 0 |
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2N3419, S; 2N3421, S |
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5.0 |
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Emitter-Base Cutoff Current |
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μAdc |
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VEB = 6.0 Vdc, IC = 0 |
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IEBO |
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0.5 |
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VEB = 8.0 Vdc, IC = 0 |
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10 |
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6 Lake Street, Lawrence, MA 01841 |
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120101 |
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1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 |
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Page 1 of 2 |
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2N3418, S, 2N3419, S, 2N3420, S, 2N3421, S, JAN SERIES
ELECTRICAL CHARACTERISTICS
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Characteristics |
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Symbol |
Min. |
Max. |
Unit |
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ON CHARACTERISTICS |
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Forward-Current Transfer Ratio |
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IC = 100 mAdc, VCE = 2.0 Vdc |
2N3418, S; 2N3419, S |
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20 |
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2N3420, S; 2N3421, S |
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40 |
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IC = 1.0 Adc, VCE = 2.0 Vdc |
2N3418, S; 2N3419, S |
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20 |
60 |
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2N3420, S; 2N3421, S |
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hFE |
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120 |
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IC = 2.0 Adc, VCE = 2.0 Vdc |
2N3418, S; 2N3419, S |
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15 |
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30 |
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2N3420, S; 2N3421, S |
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10 |
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IC = 5.0 Adc, VCE = 5.0 Vdc |
2N3418, S; 2N3419, S |
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15 |
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2N3420, S; 2N3421, S |
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Base-Emitter Saturation Voltage |
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IC = 1.0 Adc, IB = 0.1 Adc |
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VBE(sat) |
0.6 |
1.2 |
Vdc |
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IC = 2.0 Adc, IB = 0.2 Adc |
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0.7 |
1.4 |
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Collector-Emitter Saturation Voltage |
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IC = 1.0 Adc, IB = 0.1 Adc |
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VCE(sat) |
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0.25 |
Vdc |
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IC = 2.0 Adc, IB = 0.2 Adc |
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0.5 |
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DYNAMIC CHARACTERISTICS |
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Magnitude of Common Emitter Small-Signal Short Circuit |
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Forward Current Transfer Ratio |
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½hfe½ |
1.3 |
8.0 |
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IC = 0.1 Adc, VCE = 10 Vdc, f = 20 MHz |
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Output Capacitance |
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Cobo |
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pF |
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VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz |
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150 |
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SWITCHING CHARACTERISTICS |
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Delay Time |
VBE(off) = -3.7 Vdc |
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td |
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0.08 |
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Rise Time |
IC = 1.0 Adc, IB1 = 100 mAdc |
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tr |
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0.22 |
μs |
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Storage Time |
VBE(off) = -3.7 Vdc |
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ts |
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1.10 |
μs |
Fall Time |
IC = 1.0 Adc, IB2 = -100 mAdc |
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tf |
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0.20 |
μs |
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SAFE OPERATING AREA |
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DC Tests |
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TC = 1000C, 1 Cycle, t = 1.0 s |
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Test 1 |
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VCE = 5.0 Vdc, IC = 3.0 Adc |
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Test 2 |
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VCE = 37 Vdc, IC = 0.4 Adc |
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TEST 3 |
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VCE = 60 Vdc, IC = 0.185 Adc |
2N3418, S; 2N3420, S |
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VCE = 80 Vdc, IC = 0.12 Adc |
2N3419, S; 2N3421, S |
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Clamped Switching |
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TA = 250C, IB = 0.5 Adc, IC = 3.0 Adc |
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6 Lake Street, Lawrence, MA 01841 |
120101 |
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 |
Page 2 of 2 |
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