Microsemi Corporation MXP1158 Datasheet

2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989

Phototransistor Optocoupler

MXP 1158

Features

•2,500 Volt electrical isolation

•Standard 8-pin DIP package

•High current transfer ratio for low IF

•Screening similar to JANTX, JANTXV or

JANS equivalent

Description

•The MXP1158 consists of a light emitting diode and an NPN phototransistor.

•The device is available in a hermetic 8-pin DIP package.

Electrical Characteristics @ 25oC

SYMBOL CHARCTERISTIC CONDITIONS Min Max UNITS

IC(on) On-State Collector Current IF = 1 mA, VCE = 5 Volts 1.0 8.0 mAmps VCEsat Saturation Voltage IF = 2 mA, IC = 1.0 mA 0.3 Volts BVceo Breakdown Voltage IC = 1.0 mA 40 Volts BVebo Breakdown Voltage Ieb = 100 uA 7 Volts ICE(off) Off-State Leakage Current VC = 20 Volts 100 nAmps VF Input Forward Voltage IF = 10 mA 1.0 Volts IR Input Reverse Current VR = 2.0 V 100.0 uAmps tR Rise Time VCC = 10 Volts, RL = 100 Ohms 20 usec tF Fall Time IF = 5 mA 20 usec

Absolute Maximum Ratings

Reverse Voltage 2.0 Vdc minimum @ IR = 10 uA Forward Voltage 1.95 Vdc maximum @ IF = 100 mA Peak Forward Current 1.0 Amp @ 1 msec pulse width Power Dissipation 200 mW Input to Output Isolation +/- 2,500 Vdc Storage Temperature Range -65 C to +150 C Operating Temperature Range -55 C to +125 C

Data Sheet # MSC1334.PDF Updated: September 1999

LED Input Diode

Opto

234

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