Microsemi Corporation MXP1152 Datasheet
2830 S. Fairview St.
r
Santa Ana, CA 92704
PH: 714.979.8220
FAX: 714.557.5989
NPN Photo Transistor Hybrid Optocoupler
Features
MXP1152
• Small size
• Gold thick film bonding pads
A
• Custom input and output versions
• Low input current operation
Applications
• Solid state relays
• Switching power supplies
• CMOS drivers
• Light meters
Electrical Characteristics @ 25oC
SYMBOL CHARACTERISTIC CONDITIONS MI N TYP MAX UNITS
CTR Current Transfer Ratio IF = 10 mA, VCE = 5.0 V 50 100 %
VCE(SAT) Collec tor-E mitter Satur ation Voltage IF = 10 mA, IC = 1. 0 mA 0.25 Volts
BVCEO Collec tor-Emitter Voltage IC = 100 uA 20 Volts
IC E O Collec tor-E mitter Leakage Curr ent VCE = 20 V 100 nAmps
C
B
C
E
VF In put Forward Voltage I F = 10 mA 0.85 1. 2 1.95 Volts
IR Input Revers e Current VR = 3.0 V 100 uAmps
T(on) Turn-On Time
A
IF = 20 mA, VCE = 5 V,
RL = 100 Ohms
1
Collecto
Notes:
1. Fritless gold over Pt-Au or Pd-Au metallization
30 usec
2. Pt-Au or Pd-Au metallization
1
1
2
Base
.085
hybrid substrate size
0.105 x 0.085 inch
1
C
.105
1
Emitter
wirebond contact size
0.010 x 0.010 inch
Data Sheet # MSC
Updated:May 1999
Opto
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