M A COM MA4ST563-134, MA4ST563, MA4ST562-134, MA4ST562, MA4ST561-134 Datasheet

High Q Hyperabrupt
Tuning Varactors	MA4ST550 Series
	V3.00

Features

●High Q

●Usable Capacitance Change of 7:1

●Low Reverse Leakage for Good Post Tuning Drift Characteristics

●Reproducible C-V Curves

Description

The MA4ST550 family of high Q Silicon Hyperabrupt Tuning Varactors is available in a series of low parasitic capacitance microwave packages or in chip form. The MA4ST550 series of diodes is available with junction capacitances of approximately 0.8 pF to 8.2 pF at -4 volts. These diodes have capacitance change ratios as high as 7:1.

Applications

The MA4ST550 series is appropriate for use in VCOs with frequencies within the range of approximately 1-14 GHz where a large capacitance change is required. These diodes are suited for VCOs in missile seekers, telecommunication systems and electronic warfare systems with critical post tuning drift specifications.

Case Styles

30

31

134

Environmental Performance

All tuning varactors in ceramic packages are capable of meeting the performance tests dictated by the methods and procedures of the latest revisions of MIL-S-19500, MIL- STD-202 and MIL-STD-750 which specify mechanical, electrical, thermal and other environmental tests common to semiconductor products.

Absolute Maximum Ratings at 25°C

Parameter	Absolute Maximum
Reverse Voltage	Same as Breakdown Voltage
Operating Temperature	- 65°C to +150°C
Storage Temperature	- 65°C to +200°C
Temperature Coefficient	400 ppm/°C at -4 Volts

Specifications Subject to Change Without Notice.

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