LRC MUN5233DW1T1, MUN5212DW1T1, MUN5213DW1T1, MUN5214DW1T1, MUN5215DW1T1 Datasheet

LESHAN RADIO COMPANY, LTD.

Dual Bias ResistorTransistors

NPN Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5211DW1T1 series, two BRT devices are housed in the SOT–363 package which is ideal for low power surface mount applications where board space is at a premium.

•Simplifies Circuit Design

•Reduces Board Space

•Reduces Component Count

•Available in 8 mm, 7 inch/3000 Unit Tape and Reel

MUN5211DW1T1

Series

6

5

4

1

2

3

SOT-363

CASE 419B STYLE1

MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )

Rating	Symbol	Value	Unit
Collector-Base Voltage	V CBO	50	Vdc
Collector-Emitter Voltage	V CEO	50	Vdc
Collector Current	I C	100	mAdc

THERMAL CHARACTERISTICS

6		5	4
Q2		R1	R2
	R2		Q1
	R1
1	2		3

	Characteristic					MARKING DIAGRAM
	(One Junction Heated)	Symbol	Max	Unit
	Total Device Dissipation	P D	187 (Note 1.)	mW	6		5	4
	T A = 25°C		256 (Note 2.)				7X
	Derate above 25°C		1.5 (Note 1.)	mW/°C
			2.0 (Note 2.)
					1		2	3
	Thermal Resistance –	R θ JA	670 (Note 1.)	°C/W
	Junction-to-Ambient		490 (Note 2.)				7X = Device Marking
							(See Page 2)
	Characteristic
	(Both Junctions Heated)	Symbol	Max	Unit			DEVICE MARKING
	Total Device Dissipation	P D	250 (Note 1.)	mW
							INFORMATION
	T A = 25°C		385 (Note 2.)		See specific marking information in
					the device marking table on page 2 of
	Derate above 25°C		2.0 (Note 1.)	mW/°C
					this data sheet.
			3.0 (Note 2.)
	Thermal Resistance –	R θ JA	493 (Note 1.)	°C/W
	Junction-to-Ambient		325 (Note 2.)
	Thermal Resistance –	R θ JL	188 (Note 1.)	°C/W
	Junction-to-Lead		208 (Note 2.)
	Junction and Storage	T J , T stg	–55 to +150	°C
	Temperature
	1. FR–4 @ Minimum Pad	2. FR–4 @ 1.0 x 1.0 inch Pad

MUN5211dw–1/8

LESHAN RADIO COMPANY, LTD.

MUN5211DW1T1 Series

DEVICE MARKING AND RESISTOR VALUES

Device	Package	Marking	R 1(K)	R 2(K)	Shipping
MUN5211DW1T1	SOT–363	7A	10	10	3000/Tape & Reel
MUN5212DW1T1	SOT–363	7B	22	22	3000/Tape & Reel
MUN5213DW1T1	SOT–363	7C	47	47	3000/Tape & Reel
MUN5214DW1T1	SOT–363	7D	10	47	3000/Tape & Reel
MUN5215DW1T1 (Note 3.)	SOT–363	7E	10	8	3000/Tape & Reel
MUN5216DW1T1 (Note 3.)	SOT–363	7F	4.7	8	3000/Tape & Reel
MUN5230DW1T1 (Note 3.)	SOT–363	7G	1.0	1.0	3000/Tape & Reel
MUN5231DW1T1 (Note 3.)	SOT–363	7H	2.2	2.2	3000/Tape & Reel
MUN5232DW1T1 (Note 3.)	SOT–363	7J	4.7	4.7	3000/Tape & Reel
MUN5233DW1T1 (Note 3.)	SOT–363	7K	4.7	47	3000/Tape & Reel
MUN5234DW1T1 (Note 3.)	SOT–363	7L	22	47	3000/Tape & Reel
MUN5235DW1T1 (Note 3.)	SOT–363	7M	2.2	47	3000/Tape & Reel
MUN5236DW1T1 (Note 3.)	SOT–363	7N	100	100	3000/Tape & Reel
MUN5237DW1T1 (Note 3.)	SOT–363	7P	47	22	3000/Tape & Reel

ELECTRICAL CHARACTERISTICS

(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )

Characteristic			Symbol	Min	Typ	Max	Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current		(V CB = 50 V, I E = 0)	I CBO	–	–	100	nAdc
Collector-Emitter Cutoff Current		(V CE = 50 V, I B = 0)	I CEO	–	–	500	nAdc
Emitter-Base Cutoff Current		MUN5211DW1T1	I EBO	–	–	0.5	mAdc
(V EB = 6.0 V, I C = 0)		MUN5212DW1T1		–	–	0.2
		MUN5213DW1T1		–	–	0.1
		MUN5214DW1T1		–	–	0.2
		MUN5215DW1T1		–	–	0.9
		MUN5216DW1T1		–	–	1.9
		MUN5230DW1T1		–	–	4.3
		MUN5231DW1T1		–	–	2.3
		MUN5232DW1T1		–	–	1.5
		MUN5233DW1T1		–	–	0.18
		MUN5234DW1T1		–	–	0.13
		MUN5235DW1T1		–	–	0.2
		MUN5236DW1T1		–	–	0.05
		MUN5237DW1T1		–	–	0.13
Collector-Base Breakdown Voltage (I C = 10 A, I E = 0)			V (BR)CBO	50	–	–	Vdc
Collector-Emitter Breakdown Voltage(Note 4.)(IC = 2.0 mA,I B=0)			V (BR)CEO	50	–	–	Vdc

3.New resistor combinations. Updated curves to follow in subsequent data sheets.

4.Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%

MUN5211dw–2/8

LESHAN RADIO COMPANY, LTD.

						MUN5211DW1T1			Series
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ,)						(Continued)
Characteristic					Symbol	Min	Typ	Max	Unit
ON CHARACTERISTICS(Note 5.)
DC Current Gain			MUN5211DW1T1		h FE	35	60	–
(V CE = 10 V, I C = 5.0 mA)			MUN5212DW1T1			60	100	–
			MUN5213DW1T1			80	140	–
			MUN5214DW1T1			80	140	–
			MUN5215DW1T1			160	350	–
			MUN5216DW1T1			160	350	–
			MUN5230DW1T1			3.0	5.0	–
			MUN5231DW1T1			8.0	15	–
			MUN5232DW1T1			15	30	–
			MUN5233DW1T1			80	200	–
			MUN5234DW1T1			80	150	–
			MUN5235DW1T1			80	140	–
			MUN5235DW1T1			80	150	–
			MUN5235DW1T1			80	140	–
Collector-Emitter Saturation Voltage (IC= 10mA,IB= 0.3 mA)					V CE(sat)	–	–	0.25	Vdc
(I C= 10mA, I B= 5mA)	MUN5230DW1T1/MUN5231DW1T1
(I C= 10mA, IB= 1mA)	MUN5215DW1T1/MUN5216DW1T1
MUN5232DW1T1/MUN5233DW1T1/MUN5234DW1T1
Output Voltage (on)				MUN5211DW1T1	V OL	–	–	0.2	Vdc
(V CC = 5.0 V, V B = 2.5 V, R L = 1.0 kΩ )
				MUN5212DW1T1		–	–	0.2
				MUN5214DW1T1		–	–	0.2
				MUN5215DW1T1		–	–	0.2
				MUN5216DW1T1		–	–	0.2
				MUN5230DW1T1		–	–	0.2
				MUN5231DW1T1		–	–	0.2
				MUN5232DW1T1		–	–	0.2
				MUN5233DW1T1		–	–	0.2
				MUN5234DW1T1		–	–	0.2
				MUN5235DW1T1		–	–	0.2
(V CC = 5.0 V, V B = 3.5 V, R L = 1.0 kΩ		)		MUN5213DW1T1		–	–	0.2
(V CC = 5.0 V, V B = 5.5 V, R L = 1.0 kΩ		)		MUN5236DW1T1		–	–	0.2
(V CC = 5.0 V, V B = 4.0 V, R L = 1.0 kΩ		)		MUN5237DW1T1		–	–	0.2
Output Voltage (off) (V CC = 5.0 V, V B = 0.5 V, R L = 1.0 kΩ )					V OH	4.9	–	–	Vdc
(V CC = 5.0 V, V B = 0.05 V, R L = 1.0 kΩ		)		MUN5230DW1T1
(V CC = 5.0 V, V B = 0.25 V, R L = 1.0 kΩ		)		MUN5215DW1T1
				MUN5216DW1T1
				MUN5233DW1T1

5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%

MUN5211dw–3/8