LRC MMBV2103LT1, MMBV2105LT1, MMBV2107LT1, MMBV2108LT1, MMBV2109LT1 Datasheet
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LESHAN RADIO COMPANY, LTD.
Silicon Tuning Diode
These devices are designed in the popular PLASTIC PACKAGE for high volumerequirements of FM Radio and TV tuning and AFC, general frequency control andtuning applications.They provide solid–state reliability in replacement of mechanical tuning methods. Also available in Surface Mount Package up to 33pF.
•High Q
•Controlled and Uniform Tuning Ratio
•Standard Capacitance Tolerance —10%
•Complete Typical Design Curves
3 |
1 |
CATHODE |
ANODE |
MMBV2101LT1
MMBV2103LT1
MMBV2105LT1
MMBV2107LT1
MMBV2108LT1
MMBV2109LT1 MV2101 MV2104 MV2106 MV2108 MV2109 MV2111 MV2115
6 . 8 - 100p
30 VOLTS
VOLTAGE VARIABLE
CAPACITANCE DIODES
3
1
2
CASE 318–08, STYLE 8
SOT– 23 (TO–236AB)
MAXIMUM RATINGS(EACH DIODE)
Rating |
|
Symbol |
M V 2 1 X X MMBV21XXLT1 |
Unit |
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Reverse Voltage |
|
V R |
|
30 |
Vdc |
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Forward Current |
|
I F |
|
200 |
mAdc |
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Forward power Dissipation @T A = 25°C |
P D |
280 |
225 |
m W |
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Derate above 25°C |
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2.8 |
1.8 |
mW/°C |
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Junction Temperature |
|
T J |
|
+150 |
°C |
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Storage Temperature Range |
T stg |
–55 to +150 |
°C |
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DEVICE MARKING |
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MMBV2101LT1=M4G |
MMBV2107LT1=4W |
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MMBV2103LT1=4H |
MMBV2108LT1=4X |
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MMBV2105LT1=4U |
MMBV2109LT1=4J |
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ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)
Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
|
Reverse Breakdown Voltage |
V (BR)R |
30 |
— |
— |
Vdc |
|
(IR=1.0 Adc) |
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Reverse Voltage Leakage Current |
I R |
— |
— |
0.1 |
Adc |
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(VR=25Vdc,TA=25°C) |
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Diode Capacitance Temperature Coefficient |
TCC |
— |
280 |
— |
ppm/°C |
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(VR=4.0Vdc,f=1.0MHz) |
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MMBV2101~MMBV2109 –1/3
MV2101~MV2115
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