Datasheet TLE 4274 Datasheet (lnfineon)

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Voltage Regulator
Features
Output voltage: 3.3 V/2.5 V
Current capability 400 mA
Very low current consumption
Short-circuit proof
Reverse polarity proof
Suitable for use in automotive electronics
Functional Description
The TLE 4274 / 3.3V;2.5V is a voltage regulator available in a SOT223 and TO252 package. The IC regulates an input voltage up to 40 V to maximum output current is 400 mA. The IC is short­circuit proof and has a shutdown circuit protecting it against overtemperature. The TLE 4274 is also available as 5 V, 8.5 V and 10 V version. Please refer to the data sheet TLE 4274.
V
Qrated
± 4%
= 3.3 V/2.5 V. The
TLE 4274 / 3.3V;2.5V
P-SOT223-4
Dimensioning Information on External Components
The input capacitor approx. 1
in series with C
be damped. The output capacitor Stability is guaranteed for capacities
C
is necessary for compensating line influences. Using a resistor of
I
, the oscillating of input inductivity and input capacitance can
I
C
is necessary for the stability of the regulation circuit.
Q
C
10 µF with an ESR of 2.5 within the
Q
operating temperature range.
Type Ordering Code Package
TLE 4274 GSV33 Q67006-A9289 P-SOT223-4-1 TLE 4274 DV33 Q67006-A9348 P-TO252-3-1 TLE 4274 GSV25 Q67006-A9359 P-SOT223-4-1
Data Sheet 1 Rev. 2.1, 2004-01-01
TLE 4274 / 3.3V;2.5V
Circuit Description
The control amplifier compares a reference voltage to a voltage that is proportional to the output voltage and drives the base of the series transistor via a buffer. Saturation control as a function of the load current prevents any oversaturation of the power element. The IC also includes a number of internal circuits for protection against:
•Overload
Overtemperature
Reverse polarity
P-TO252-3-1 (D-PAK)
P-SOT223-4-1
GND
1
Ι
2
GND
Q
4
GND
3
AEP02282
13
Ι Q
AEP02561
Figure 1 Pin Configuration (top view)
Table 1 Pin Definitions and Functions Pin No. Symbol Function
1I Input; block to ground directly at the IC with a ceramic capacitor. 2, 4 GND Ground; P-TO252-3-1: internally connected to heatsink 3Q Output; block to ground with capacitor
C
10 µF, ESR 2.5
Q
Data Sheet 2 Rev. 2.1, 2004-01-01
TLE 4274 / 3.3V;2.5V
Temperature
Sensor
1
Ι
Control
Amplifier
Bandgap
Reference
Buffer
Saturation
Control and
Protection
Circuit
2
GND
AEB02283
3
Q
Figure 2 Block Diagram
Data Sheet 3 Rev. 2.1, 2004-01-01
TLE 4274 / 3.3V;2.5V
Table 2 Absolute Maximum Ratings
T
= -40 to 150 °C
j
Parameter Symbol Limit Values Unit Test Condition
Min. Max.
Input
Voltage Current
V I
I
I
-42 45 V – – Internally limited
Output
Voltage Current
V I
Q
Q
-1.0 40 V – – Internally limited
Ground
Current
I
GND
–100mA
Temperature
Junction temperature Storage temperature
T
j
T
stg
–150°C–
-50 150 °C–
Note: Maximum ratings are absolute ratings; exceeding any one of these values may
cause irreversible damage to the integrated circuit.
Table 3 Operating Range Parameter Symbol Limit Values Unit Remarks
Min. Max.
Input voltage Junction temperature
V T
I
j
4.7 40 V
-40 150 °C–
Thermal Resistance
Junction ambient Junction ambient R Junction case R Junction case
1) Soldered in, 1 cm2 copper area at pin 4, FR4
2) Soldered in, minimal footprint, FR4
Data Sheet 4 Rev. 2.1, 2004-01-01
R
R
thja
thja
thjc
thjc
–100K/WSOT223 –70K/WTO252 –25K/WSOT223 –4K/WTO252
1)
2)
TLE 4274 / 3.3V;2.5V
Table 4 Characteristics
V
= 6 V; -40 °C < Tj < 150 °C (unless otherwise specified)
I
Parameter Symbol Limit Values Unit Measuring Condition
Min. Typ. Max.
Output voltage V33-Version
Output voltage V33-Version
Output voltage V25-Version
Output voltage V25-Version
Output current limitation
1)
Current consumption;
I
= II - I
q
Q
Current consumption;
I
= II - I
q
Q
Current consumption;
I
= II - I
q
Drop voltage
Q
1)
V33-Version Drop voltage
1)
V25-Version
V
V
V
V
I
I
I
I
V
V
Q
Q
Q
Q
Q
q
q
q
dr
dr
3.17 3.3 3.44 V 5 mA < IQ < 400 mA
V
4.7 V <
< 28 V
I
3.17 3.3 3.44 V 5 mA < IQ < 200 mA
V
4.7 V <
< 40 V
I
2.4 2.5 2.6 V 5 mA < IQ < 400 mA
V
4.7 V <
< 28 V
I
2.4 2.5 2.6 V 5 mA < IQ < 200 mA
4.7 V <
V
< 40 V
I
400 600 mA
100 220 µA IQ = 1 mA
–815mAIQ = 250 mA
– 2030mAIQ = 400 mA
–0.71.2V IQ = 300 mA
V
= VI - V
dr
Q
–1.02.0V IQ = 300 mA
V
= VI - V
dr
Q
Load regulation V
Line regulation
Power supply ripple
V
PSRR –60–dBf
rejection Temperature output
V
d
Q
Q
/dT –0.5–mV/K
Q
– 4070mVIQ = 5 mA to 300 mA;
V
= 6 V
I
– 1025mVVl = 12 V to 32 V
I
= 5 mA
Q
= 100 Hz;
r
V
= 0.5 Vpp
r
voltage drift
1) Measured when the output voltage VQ has dropped 100 mV from the nominal value obtained at VI = 6 V.
Data Sheet 5 Rev. 2.1, 2004-01-01
TLE 4274 / 3.3V;2.5V
V
Ι
C
Q
µ
100 F
C
Ι
100 nF
Figure 3 Measuring Circuit
Ι
1
TLE 4274 GSV33
2, 4
GND
Q
4
C
Q
µ
10 F
V
Q
R
Load
AES02284
5 - 40 V
Ι
Input
C
Ι
100 nF
Figure 4 Application Circuit
1
TLE 4274 GSV33
2, 4
GND
Q
4
3.3 V
/
2.5 V
Output
C
Q
10 µF
AES02285
Data Sheet 6 Rev. 2.1, 2004-01-01
TLE 4274 / 3.3V;2.5V
4.5 - 40 V
C
Ι
470 nF
1 k
Ι
TLE 4276
GND
Ι
TLE 4274 GSV33
GND
Q
INH
Q
C
22
C
10
Q1
Q2
10 V e.g. to sensor
µ
F
µ
e.g. to C
3.3 V to C
µ
µ
F
AES02579
Figure 5 Application Example
Data Sheet 7 Rev. 2.1, 2004-01-01
Typical Performance Characteristics
V
Output Voltage Junction Temperature
3.5
V
V
Q
3.4
3.3
versus
Q
V
= 6 V
I
T
(V33-Version)
j
AED02288
TLE 4274 / 3.3V;2.5V
V
Output Voltage Junction Temperature
2.7
V
V
Q
2.6
2.5
versus
Q
V
= 6 V
I
T
(V25-Version)
j
AED02806
3.2
3.1
3.0
2.9
-40 04080120 ˚C 160
Input Current Input Voltage
3.5
mA
I
I
3.0
2.5
I
versus
q
V
(V33-Version)
I
T
j
AED01969
2.4
2.3
2.2
2.1
-40 04080120 ˚C 160
Input Current Input Voltage
3.5
mA
I
I
3.0
2.5
I
versus
q
V
(V25-Version)
I
T
j
AED03016
2.0
1.5
1.0
0.5
-2
0
-50
T
= 25 ˚C
j
R
= 3.3 k
I
-25 0 25
V
50
V
I
2.0
1.5
1.0
0.5
-2
0
-50
T
= 25 ˚C
j
R
= 3.3 k
I
-25 0 25
50
V
V
I
Data Sheet 8 Rev. 2.1, 2004-01-01
TLE 4274 / 3.3V;2.5V
Current Consumption Iq versus
I
Output Current
0.6
mA
I
q
0.5
0.4
0.3
0.2
0.1
0
0
10 20 30 40 mA 60
(low load)
Q
= 25 ˚C
T
j
V
= 13.5 V
I
AED02268
Current Consumption Iq versus
I
Output Current
60
mA
I
q
50
40
30
20
10
0
0
100 200 300 400 600
I
Q
(high load)
Q
= 25 ˚C
T
j
V
= 13.5 V
I
AED02267
mA
I
Q
Output Current Input Voltage
800
mA
Ι
Q
600
400
200
0
V
I
versus
Q
I
T
= 25 C
j
V
= 0 V
Q
20010
30
AED02287
40
V
50
V
Ι
Region of Stability
C
Q
ESR
= 10 µF
10
9
8
7
6
5
4
3
2
1
0
0.2
10
0
for
AED03050
12
10
10 mA
I
Q
500
Data Sheet 9 Rev. 2.1, 2004-01-01
Package Outlines
A
6.5 3
±0.2
±0.1
0.1 MAX.
TLE 4274 / 3.3V;2.5V
±0.1
1.6
0.7
±0.1
1 2
4
3
2.3
+0.2
acc. to DIN 6784
±0.3
7
MAX. 15˚
0.5 MIN.
4.6
0.25
M
A
0.25
M
Figure 6 P-SOT223-4-1 (Plastic Small Outline Transistor)
0.28
B
B
±0.2
3.5
±0.04
GPS05560
You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products.
SMD = Surface Mounted Device
Dimensions in mm
Data Sheet 10 Rev. 2.1, 2004-01-01
TLE 4274 / 3.3V;2.5V
+0.15
6.5
±0.1
1
5.4
-0.10
±0.1
A
B
2.3
+0.05
-0.10
0.9
+0.08
-0.04
±0.5
9.9
-0.2
6.22
±0.15
0.8 min0.51
0.15
max
per side
3x
0.75
±0.1
0...0.15
2.28
4.57
M
B
A0.25
0.1
All metal surfaces tin plated, except area of cut.
Figure 7 P-TO252-3-1 (Plastic Transistor Single Outline)
+0.08
0.5
-0.04
±0.1
1
GPT09051
You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products.
SMD = Surface Mounted Device
Dimensions in mm
Data Sheet 11 Rev. 2.1, 2004-01-01
Edition 2004-01-01 Published by Infineon Technologies AG,
St.-Martin-Strasse 53, 81669 München, Germany
© Infineon Technologies AG 2004.
All Rights Reserved.
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