Isolation voltage shall be measured using the following method.
(1) Short between anode and cathode on the primary side and between collector and
emitter on the secondary side.
(2) The isolation voltage tester with zero-cross circuit shall be used.
(3) The waveform of applied voltage shall be a sine wave.
*2. For 10 Seconds
°C
°C
Part No. : LTV-817 / 827 / 847 ( M, S, S-TA1 ) Page :
BNS-OD-C131/A4
14
LITE-
ON TECHNOLOGY CORPORATION
Emitter
=0.1mA
A
*1
Emitter
=20mA
=2mA
I
9of
Property of LITE-ON Only
ELECTRICAL - OPTICAL CHARACTERISTICS
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Forward Voltage VF — 1.2 1.4 V IF=20mA
INPUT
OUTPUT
Reverse Current IR ——10
Terminal Capacitance Ct — 30 250 pF V=0, f=1KHz
Collector Dark Current ICEO ——100 nA VCE=20V, IF=0
CollectorBreakdown Voltage
Emitter-Collector
Breakdown Voltage
Collector Current IC 2.5 —30 mA
Current Transfer Ratio ◇ CTR50 —600 %
CollectorSaturation Voltage
BVCEO 35 ——V
BVECO 6 ——V
VCE(sat) — 0.1 0.2 V
µA
( Ta = 25°C )
VR=4V
IC
IF=0
IE=10µ
IF=0
IF=5mA
VCE=5V
IF
IC=1mA
TRANSFER
CHARACTERISTICS
*1
CTR
C
=×
I
F
Isolation Resistance Riso
Floating Capacitance Cf — 0.6 1 pF V=0, f=1MHz
Cut-Off Frequency fc—80 — kHz
Response Time (Rise) tr — 4 18
Response Time (Fall) tf — 3 18
100%
5×10
10
1×10
11
—
DC500V
Ω
40 ~ 60% R.H.
VCE=5V, IC
RL=100Ω, -3dB
µs
VCE=2V, IC=2mA
RL=100Ω
µs
Part No. : LTV-817 / 827 / 847 ( M, S, S-TA1 ) Page :
BNS-OD-C131/A4
14
LITE-
ON TECHNOLOGY CORPORATION
10of
Property of LITE-ON Only
RANK TABLE OF CURRENT TRANSFER RATIO CTR
MODEL NO. RANK MARK CTR ( % )
L 50 ~ 100
A 80 ~ 160
B 130 ~ 260
LTV-817
C 200 ~ 400
D 300 ~ 600
L or A or B or C or D 50 ~ 600
B 130 ~ 260
B or C or BC 130 ~ 400
LTV-827
LTV-847
B、BC、C、CD or No mark
C 200 ~ 400
C or D or CD 200 ~ 600
50 ~ 600
IF = 5 mA
Part No. : LTV-817 / 827 / 847 ( M, S, S-TA1 ) Page :
BNS-OD-C131/A4
CONDITIONS
VCE = 5 V
Ta = 25 °C
14
LITE-
ON TECHNOLOGY CORPORATION
11of
Property of LITE-ON Only
CHARACTERISTICS CURVES
Fig.1 Forword CurrentFig.2 Collector Power Dissiption
vs. Ambient Temperatute
60
50
)
A
m
(
F
40
I
t
n
e
r
r
30
u
c
d
r
a
20
w
r
o
F
10
0
-30
0255075 100 1250-30125255075 100
o
vs. Ambient Temperature
200
)
W
m
(
c
P
150
n
o
i
t
a
p
i
s
s
i
100
d
r
e
w
o
P
r
50
o
t
c
e
l
l
o
C
0
Ambient temperature Ta ( C)Ambient temperature Ta ( C)
o
Fig.3 Collector-emitter Saturation
Voltage vs. Forward Current
6
A
A
A
e
A
g
m
a
t
5
l
.
5
o
0
v
=
n
c
I
o
i
t
4
a
r
u
t
a
s
3
r
e
t
t
i
)
m
2
e
V
(
-
r
)
t
t
o
a
c
s
1
(
e
l
l
E
o
C
V
C
0
0
A
m
m
m
m
1
3
5
7
105
Forward current I (mA)
F
Fig.5 Current Transfer Ratio vs.
Forward Current
200
180
)
%
(
160
R
T
140
C
o
i
t
120
a
r
r
100
e
f
s
n
80
a
r
t
t
60
n
e
r
r
40
u
C
20
0
1
Forward current I (mA)
V =5V
Ta=25 C
F
Ta=25 C
CE
o
Fig.4 Forward Current vs. Forward
Voltage
O
15
500
200
)
A
100
m
(
F
I
t
50
n
e
r
r
u
20
c
d
r
10
a
w
r
o
5
F
2
1
0
o
Ta=75 C
o
50 C
0.5 1.0 1.52.0 2.5 3.0
Forward voltage V (V)
F
25 C
o
0 C
-25 C
o
o
Fig.6 Collector Current vs.
Collector-emitter Voltage
30
I =30mA
F
25
)
A
m
(
c
20
I
t
n
e
r
r
15
u
c
r
o
t
c
10
e
l
l
o
C
5
0
025102050
20mA
1 2 3 4 5 6 7 8 9
Collector-emitter voltage V (V)
10mA
5mA
Ta=25 C
Pc(MAX.)
CE
o
Part No. :
LTV-817 / 827 / 847 ( M, S, S-TA1 )
BNS-OD-C131/A4
Page :
14
LITE-
ON TECHNOLOGY CORPORATION
12of
Property of LITE-ON Only
CHARACTERISTICS CURVES
Fig.7 Relative Current Transfer Ratio
vs. Ambient Temperature
150
)
%
(
o
i
t
a
r
r
100
e
f
s
n
a
r
t
t
n
e
r
r
u
50
c
e
v
i
t
a
l
e
R
0
-30
0255075100
Ambient temperature Ta ( C)
Fig.9 Collector Dark Current vs.
Ambient Temperature
-5
10
V =20V
)
A
(
I
t
n
e
r
r
u
c
k
r
a
d
r
o
t
c
e
l
l
o
C
CE
-6
10
O
E
C
-7
10
-8
10
-9
10
-10
10
-11
10
-25
Ambient temperature Ta ( C)
Fig.8 Collector-emitter Saturation Voltage
vs. Ambient Temperature
0.16
I =5mA
F
V =5V
CE
oo
125125
e
g
a
0.14
t
l
o
v
0.12
n
o
i
t
a
r
0.10
u
t
a
s
0.08
r
e
t
t
i
0.06
)
m
V
e
(
-
r
)
t
0.04
o
t
a
c
s
(
e
l
l
E
0.02
o
C
V
C
0
-25
0255075100
Ambient temperature Ta ( C)
I =20mA
F
Ic=1mA
Fig.10 Response Time vs. Load
Resistance
500
V =2V
CE
Ic=2mA
200
100
)
s
50
(
e
20
m
i
t
10
e
s
n
5
o
p
s
e
2
R
1
0.5
0.2
o
125
0.050255075100
o
Ta=25 C
tr
tf
td
ts
0.10.2 0.5 1 25 10
Load resistance R (k )
L
Fig.11 Frequency Response
0
)
B
d
(
v
A
n
i
a
g
10
e
g
a
t
l
o
V
20
0.5
1520 50
R =10k
L
210100500
Frequency f (kHz)
V =2V
CE
Ic=2mA
Ta=25 C
1k 100
o
Test Circuit for Response Time
Test Circuit for Frequency Response
Part No. : LTV-817 / 827 / 847 ( M, S, S-TA1 ) Page :
BNS-OD-C131/A4
14
LITE-
ON TECHNOLOGY CORPORATION
13of
Property of LITE-ON Only
RECOMMENDED FOOT PRINT PATTERNS (MOUNT PAD)
Unit : mm
4 PIN 8 PIN
16 PIN
Part No. :
BNS-OD-C131/A4
LTV-817 / 827 / 847 ( M, S, S-TA1 )
Page :
14
ON TECHNOLOGY CORPORATION
14of
LITE-
Property of LITE-ON Only
Notes:
- Lite-On is continually improving the quality, reliability, function or design and
Lite-On reserves the right to make changes without further notices.
- The products shown in this publication are designed for the general use in electronic
applications such as office automation equipment, communications devices,
audio/visual equipment, electrical application and instrumentation.
- For equipment/devices where high reliability or safety is required, such as space
applications, nuclear power control equipment, medical equipment, etc, please
contact our sales representatives.
- When requiring a device for any ”specific” application, please contact our sales in
advice.
- If there are any questions about the contents of this publication, please contact us at
your convenience.
- The contents described herein are subject to change without prior notice.
Part No. :
BNS-OD-C131/A4
LTV-817 / 827 / 847 ( M, S, S-TA1 )
Page :
14
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