LITEON LTV 356T-SMD Datasheet

LITE-ON TECHNOLOGY CORPORATION

Property of LITE-ON Only

FEATURES

* Current transfer ratio

( CTR : MIN. 50% at IF = 5mA, VCE = 5V )

* High input-output isolation voltage

( Viso = 3,750Vrms )

* High collector-emitter voltage

( VCEO = 80V )
* Employs double transfer mold technology
* Subminiature type

( The volume is smaller than that of conventional DIP type by as far as 30% )
* Mini-flat package :

2.0mm profile : LTV-356T
* UL approved ( No. E113898 )
* CUL approved ( No. E113898 , 01SC19287 )
* CSA approved ( No. 1243207 )
* FIMKO approved ( No. FI-16420 )
* NEMKO approved ( No. P01100403 )
* DEMKO approved ( No. 310475-01 )
* SEMKO approved ( No. 0109173 / 01-08 )
* VDE approved ( No. 094722 )
* RoHS compliance

APPLICATIONS

* Hybrid substrates that require high density mounting.
* Programmable controllers

Part No. : LTV-356T Page : 1 of 9

BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION

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OUTLINE DIMENSIONS

LTV-356T :

2.54±0.25

Date Code *1

4.40±0.2

Pin No. and Internal
connection diagram

4 3

Factory Code *2.

2.00±0.20.10±0.1

Rank *3

3.85±0.3

0.40±0.1

1 2

1. Anode

2. Cathode

5.30±0.3

7.00

3. Emitter

4. Collector

+0.2

-0.7

0.2±0.05

*1. 2-digit date code.
*2. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China).
*3. Rank shall be or shall not be marked.

Part No. :

LTV-356T

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BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION

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TAPING DIMENSIONS

Description Symbol Dimensions in mm ( inches )

Tape wide W
Pitch of sprocket holes P0

Distance of compartment
Distance of compartment to compartment P1

F

P2

12 ± 0.3 ( .47 )
4 ± 0.1 ( .15 )

5.5 ± 0.1 ( .217 )
2 ± 0.1 ( .079 )
8 ± 0.1 ( .315 )

Part No. :

LTV-356T

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BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION

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ABSOLUTE MAXIMUM RATING

PARAMETER

Forward Current IF 50 mA

INPUT

OUTPUT

Total Power Dissipation Ptot 170 mW

*1 Isolation Voltage Viso 3,750 Vrms

Operating Temperature Topr -55 ~ +100

Storage Temperature Tstg -55 ~ +150

Reverse Voltage VR 6 V

Power Dissipation P 70 mW

Collector - Emitter Voltage VCEO 80 V

Emitter - Collector Voltage VECO 6 V

Collector Current IC 50 mA

Collector Power Dissipation PC 150 mW

SYMBOL

RATING UNIT

( Ta = 25°C )

°C
°C

*2 Soldering Temperature Tsol 260

*1. AC For 1 Minute, R.H. = 40 ~ 60%

Isolation voltage shall be measured using the following method.
(1) Short between anode and cathode on the primary side and between collector and

emitter on the secondary side.
(2) The isolation voltage tester with zero-cross circuit shall be used.
(3) The waveform of applied voltage shall be a sine wave.

*2. For 10 Seconds

Part No. :

LTV-356T

Page :

°C

9

BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION

Emitter

=0.1mA

A

Emitter

mA

I

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Property of LITE-ON Only

ELECTRICAL - OPTICAL CHARACTERISTICS

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS

Forward Voltage VF — 1.2 1.4 V IF=20mA

INPUT

OUTPUT

Reverse Current IR — — 10

Terminal Capacitance Ct — 30 250 pF V=0, f=1KHz

Collector Dark Current ICEO — — 100 nA VCE=20V, IF=0

Collector­Breakdown Voltage

Emitter-Collector
Breakdown Voltage

Collector Current IC 2.5 — 30 mA

*1

Current Transfer Ratio CTR 50 — 600 %

Collector­Saturation Voltage

BVCEO 80 — — V

BVECO 6 — — V

VCE(sat) — — 0.2 V

µA

( Ta = 25°C )

VR=4V

IC
IF=0

IE=10µ
IF=0

IF=5mA
VCE=5V

IF=20
IC=1mA

TRANSFER

CHARACTERISTICS

*1

CTR

C

= ×

I

F

Isolation Resistance Riso

Floating Capacitance Cf — 0.6 1 pF V=0, f=1MHz

Response Time (Rise) tr — 4 18

Response Time (Fall) tf — 3 18

100%

5×10

10

1×10

11

—

DC500V

Ω

40 ~ 60% R.H.

µs

VCE=2V, IC=2mA
RL=100Ω

µs

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LTV-356T

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LITE-ON TECHNOLOGY CORPORATION

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RANK TABLE OF CURRENT TRANSFER RATIO CTR

MODEL NO. RANK MARK CTR ( % )

A 80 ~ 160
B 130 ~ 260

LTV-356T

C 200 ~ 400
D 300 ~ 600

A or B or C or D or No mark

50 ~ 600

IF = 5 mA

CONDITIONS

VCE = 5 V
Ta = 25 °C

Part No. :

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Page :

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LITE-ON TECHNOLOGY CORPORATION

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CHARACTERISTICS CURVES

Fig.1 Forword Current Fig.2 Collector Power Dissiption

vs. Ambient Temperatute

60

50

)
A

m

(

F

40

I

t

n

e

r

r

30

u

c
d

r

a

20

w

r

o
F

10

0

-55

125 0-55 12525 50 75 100

1007550250

o

vs. Ambient Temperature

200

)
W
m

(
c

P

150

n

o

i

t

a
p

i

s

s

i

100

d
r

e
w

o
P

r

50

o

t

c

e

l

l

o
C

0

Ambient temperature Ta ( C)Ambient temperature Ta ( C)

o

Fig.3 Collector-emitter Saturation

Voltage vs. Forward Current

6

A

A

A

e

A

g

a

t

l

o

v
n

o

i

t

a

r

u

t

a

s
r

e

t

t

i
m

)

e

V

-

(

r

t

)

t

o

a

c

s

e

(

l

l

E

o

C

C

V

m

m

1

5

.

5

0
=

c

I

4

3

2

1

0

0

A

m

m

m

3

7

5

105

Forward current IF(mA)

Fig.5 Current Transfer Ratio vs.

Forward Current

200

VCE=5V

180

)

%

(

160

R

T

140

C
o

i

t

120

a

r
r

100

e

f

s

n

80

a

r

t

t

60

n

e

r

r

40

u
C

20

0

Ta= 25 C

1

o

Ta= 25 C

Fig.4 Forward Current vs. Forward

Voltage

O

15

500
200

)
A

m

100

(

F

I

t

50

n

e

r

r

u

20

c
d

r

10

a
w

r

o

5

F

2
1

0

o

Ta=75 C

o

50 C

1.0

0.5

1.5 2.0 2.5 3.0

Forward voltage VF(V)

25 C

o

0 C

-25 C

o

o

Fig.6 Collector Current vs.

Collector-emitter Voltage

50

IF= 30mA

)

40

A
m

(
c

I

t

30

n

e

r

r

u

c
r

20

o

t

c

e

l

l

o

10

C

0

02 5 10 20 50

1 2 3 4 5 6 7 8 9

Collector-emitter voltage VCE(V)Forward current IF(mA)

25mA

20mA

15mA

10mA

5mA

Ta= 25 C

Pc(MAX.)

o

Part No. :

LTV-356T

Page :

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LITE-ON TECHNOLOGY CORPORATION

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CHARACTERISTICS CURVES

Fig.7 Relative Current Transfer Ratio

vs. Ambient Temperature

150

)
%

(
o

i

t

a

r

r

100

e

f

s

n

a

r

t

t

n

e

r

r

u

50

c
e

v

i

t

a

l

e
R

0

20 40 60 80 100

Ambient temperature Ta ( C) Ambient temperature Ta ( C)

IF= 5mA
VCE=2V

o

Fig.9 Collector Dark Current vs.

Ambient Temperature

10000

)
A

n

(

O

1000

E
C

I

t

n

e

r

r

u

c
k

r

a
d
r

o

t

c

e

l

l

o
C

VCE=20V

100

10

1

Ambient temperature Ta ( C)

o

Fig.8 Collector-emitter Saturation Voltage

vs. Ambient Temperature

0.10

e
g

a

t

l

o

0.08

v
n

o

i

t

a

r

0.06

u

t

a

s
r

e

t

t

0.04

i

)

m

V

e

(

-

r

)

t

o

t

a

0.02

c

s

(

e

l

l

E

o

C

V

C

0

20 40 80 100

60

IF= 20mA
IC= 1mA

o

Fig.10 Response Time vs. Load

Resistance

500

VCE=2V

200

IC= 2mA

o

Ta= 25 C

100

)

s

50

(
e

20

m

i

t

10

e

s

n

5

o
p

s

2

e
R

1

0.5

0.2

0.0520 40 60 80 100 0.1 0.2 0.5 1 2 5 10

Load resistance RL (k )

tr

tf

td

ts

Fig.11 Frequency Response

0

)
B
d

(
v
A
n

i

a

10

g
e

g

a

t

l

o

V

RL= 10kΩ

20

0.5

2 10 100 500

1 5 20 50

Frequency f (kHz)

1kΩ

VCE=2V
IC= 2mA
Ta=25 C

100Ω

o

Test Circuit for Response Time

Input

Vcc

Output

Output

td

tr

Input

RD

RL

Test Circuit for Frequency Response

Vcc

RD

RL

Output

10%
90%

ts

tf

Part No. :

LTV-356T

Page :

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TEMPERATURE PROFILE OF SOLDERING REFLOW

(1) One time soldering reflow is recommended within the condition of temperature and time

profile shown below.

(2) When using another soldering method such as infrated ray lamp, the temperature may rise

partially in the mold of the device.
Keep the temperature on the package of the device within the condition of above (1)

RECOMMENDED FOOT PRINT PATTERNS (MOUNT PAD)

Unit : mm

Part No. :

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LTV-356T

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