LG KS10 User Manual

Date: July, 2007 / Issue 1.0

Service Manual

KS10

Model : KS10

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1. INTRODUCTION.................................. 5

1.1 Purpose ...................................................... 5

1.2 Regulatory Information ............................... 5

2. PERFORMANCE ..................................7

2.1 System Overview.........................................7

2.2 Usable environment.....................................8

2.3 Radio Performance......................................8

2.4 Current Consumption.................................14

2.5 RSSI BAR ..................................................14

2.6 Battery BAR ...............................................15

2.7 Sound Pressure Level ...............................16

2.8 Charging ....................................................16

3. TECHNICAL BRIEF............................17

3.1 General Description ...................................17

3.2 GSM Mode.................................................19

3.3 UMTS Mode...............................................23

3.4 LO Phase-locked Loop ..............................26

3.5 Off-chip RF Components ...........................29

3.6 Digital Baseband

(Stn8810 / MSM6275)................................34

3.7. Hardware Architecture ..............................36

3.8. Subsystem of STn8810 ............................39

3.9. Hardware Peripheral system of

Stn8810 ....................................................42

3.10. Subsystem of MSM6275.........................47

3.11. External memory interface......................50

3.12. Hardware sub system of MSM6275........51

3.13. Audio and sound.....................................61

3.14. Camera interface ....................................67

3.15 Bluetooth..................................................76

3.16 Main Features..........................................77

4. TROUBLE SHOOTING.......................83

4.1 RF Component ..........................................83

4.2 SIGNAL PATH ...........................................85

4.3 Checking VCXO Block...............................87

4.4 Checking Ant. Switch Module Block ..........91

4.5 Checking WCDMA Block ...........................93

4.6 Checking GSM Block...............................103

4.7 Power on trouble......................................111

4.8 USB trouble .............................................114

4.9 SIM detect trouble....................................115

4.10 Key sense trouble ..................................116

4.11 Keypad backlight trouble .......................118

4.12 Folder on/off trouble...............................120

4.13 Micro SD trouble ....................................122

4.14 Charging trouble ....................................124

4.15 Audio trouble..........................................127

4.16 Camera trouble ......................................143

4.17 Main LCD trouble...................................149

4.18 Bluetooth trouble....................................152

5. DOWNLOAD.....................................155

5.1 Composition omposition ..........................155

5.2 LGDP2 Program install LGDP2 Program

install........................................................156

5.3 USB Driver setup USB Driver setup ........159

5.4 KS10 LGDP2 run file & DLL file setup .....162

5.5 Execute LGDP2 program.........................163

6. BLOCK DIAGRAM ...........................178

6.1 GSM & WCDMA RF Block.......................178

6.2 Interface Diagram ....................................180

6.3 KS10 Modem & Baseband

Block Diagram .........................................184

6.4 KS10 Application Processor Block

Diagram ...................................................185

6.5 KS10 Audio & BT Block Diagram ............186

Table Of Contents

LGE Internal Use Only

- 4 -

6.6 KS10 Camera Block Diagram .................187

6.7 KS10 LCD Block Diagram ......................188

6.8 KS10 Power Distribution Diagram ...........189

6.9 KS10 Clock Distribution Diagram ...........190

7. Circuit Diagram................................177

8. PCB LAYOUT ...................................202

9. Usage of Hot-Kimchi .......................209

9.1 Usage of Hot-Kimchi................................195

10. Engineering Mode .........................212

10.1 Version Info............................................213

10.2 Device Test............................................213

10.3 Factory Reset ........................................214

10.4 MTC .......................................................214

10.5 Save Log................................................214

11. EXPLODED VIEW & REPLACEMENT

PART LIST ..................................... 216

10.1 EXPLODED VIEW ................................ 216

10.2 Replacement Parts

<Mechanic component> ....................... 219

<Main component> ............................... 222

10.3 Accessory ............................................. 246

LGE Internal Use Only

Only for training and service purposes

- 5 -

LGE Internal Use Only

1.1 Purpose

This manual provides the information necessary to repair, calibration, description and download the features of this model.

1.2 Regulatory Information

A. Security

Toll fraud, the unauthorized use of telecommunications system by an unauthorized part (for example, persons other than your company’s employees, agents, subcontractors, or person working on your company’s behalf) can result in substantial additional charges for your telecommunications services. System users are responsible for the security of own system. There are may be risks of toll fraud associated with your telecommunications system. System users are responsible for programming and configuring the equipment to prevent unauthorized use. The manufacturer does not warrant that this product is immune from the above case but will prevent unauthorized use of commoncarrier telecommunication service of facilities accessed through or connected to it. The manufacturer will not be responsible for any charges that result from such unauthorized use.

B. Incidence of Harm

If a telephone company determines that the equipment provided to customer is faulty and possibly causing harm or interruption in service to the telephone network, it should disconnect telephone service until repair can be done. A telephone company may temporarily disconnect service as long as repair is not done.

C. Changes in Service

A local telephone company may make changes in its communications facilities or procedure. If these changes could reasonably be expected to affect the use of the phones or compatibility with the net work, the telephone company is required to give advanced written notice to the user, allowing the user to take appropriate steps to maintain telephone service.

D. Maintenance Limitations

Maintenance limitations on the phones must be performed only by the manufacturer or its authorized agent. The user may not make any changes and/or repairs expect as specifically noted in this manual. Therefore, note that unauthorized alternations or repair may affect the regulatory status of the system and may void any remaining warranty.

1. INTRODUCTION

- 6 -

LGE Internal Use Only

Only for training and service purposes

E. Notice of Radiated Emissions

This model complies with rules regarding radiation and radio frequency emission as defined by local regulatory agencies. In accordance with these agencies, you may be required to provide information such as the following to the end user.

F. Pictures

The pictures in this manual are for illustrative purposes only; your actual hardware may look slightly different.

G. Interference and Attenuation

A phone may interfere with sensitive laboratory equipment, medical equipment, etc. Interference from unsuppressed engines or electric motors may cause problems.

H. Electrostatic Sensitive Devices

ATTENTION

Boards, which contain Electrostatic Sensitive Device (ESD), are indicated by the sign. Following information is ESD handling:

• Service personnel should ground themselves by using a wrist strap when exchange system boards.

• When repairs are made to a system board, they should spread the floor with anti-static mat which is also grounded.

• Use a suitable, grounded soldering iron.

• Keep sensitive parts in these protective packages until these are used.

• When returning system boards or parts like EEPROM to the factory, use the protective package as described.

1. INTRODUCTION

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LGE Internal Use Only

2. PERFORMANCE

2.1 System Overview

2. PERFORMANCE

Item Specification

Shape GSM900/1800/1900 and WCDMA Slide Handset

Size 104 X 52 X 18.9 mm

Weight 118 g (with 950mAh Battery)

Power 3.7V normal, 950 mAh Li-Polymer

Talk Time Over 150 min (WCDMA, Tx=12 dBm, Voice)

(with 950mAh) Over 175 min (GSM, Tx=Max, Voice)

Standby Time Over 200 Hrs (WCDMA, DRX=1.28)

(with 950mAh) Over 220 Hrs (GSM, Paging period=9)

Antenna Internal type and Antenna

LCD Main 240 X 320 pixel TFT (QVGA LCD Module)

LCD Backlight Blue LED Back Light (main only)

Camera Dual Camera ; 1.3 Mega pixel (CMOS), VGA Camera (CMOS)

Vibrator Yes (Cylinder Type)

LED Indicator No

MIC Yes

Receiver Yes

Earphone Jack Yes

Connectivity Bluetooth, USB

Volume Key Push Type(+, -)

External Memory Micro-SD

I/O Connect 18 Pin

- 8 -

LGE Internal Use Only

Only for training and service purposes

2.2 Usable environment

1) Environment

2) Environment (Accessory)

* CLA : 12 ~ 24 V(DC)

2.3 Radio Performance

1) Transmitter - GSM Mode

* In case of DCS : [A] -> 1710, [B] -> 1785 * In case of PCS : [A] -> 1850, [B] -> 1910

2. PERFORMANCE

Item Specification

Voltage 3.7 V(Typ), [Shut Down : 3.22 V]

Operation Temp -20 ~ +60°C

Storage Temp -20 ~ +70°C

Humidity 85 % (Max)

Reference Spec. Min Typ. Max Unit

TA Power Available power 100 220 240 Vac

No Item GSM DCS & PCS

100k~1GHz -39dBm

9k ~ 1GHz -39dBm

MS allocated 1G~[A]MHz -33dBm

Channel

1G~12.75GHz -33dBm

[A]M~[B]MHz -39dBm

Conducted [B]M~12.75GHz -33dBm

1 Spurious 100k~880MHz -60dBm 100k~880MHz -60dBm

Emission 880M~915MHz -62dBm 880M~915MHz -62dBm

Idle Mode

915M~1GHz -60dBm 915M~1GHz -60dBm

1G~[A]MHz -50dBm 1G~[A]MHz -50dBm

[A]M~[B]MHz -56dBm [A]M~[B]MHz -56dBm

[B]M~12.5GHz -50dBm [B]M~12.5GHz -50dBm

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LGE Internal Use Only

2. PERFORMANCE

* In case of DCS : [A] -> 1710, [B] -> 1785 * In case of PCS : [A] -> 1850, [B] -> 1910

No Item GSM DCS & PCS

30M ~ 1GHz -36dBm

30M~1GHz -36dBm

MS allocated 1G~[A]MHz -30dBm

Channel

1G ~ 4GHz -30dBm

[A]M~[B]MHz -36dBm

Radiated [B]M~4GHz -30dBm

2Spurious 30M ~ 880MHz -57dBm 30M~880MHz -57dBm

Emission 880M ~ 915MHz -59dBm 880M~915MHz -59dBm

Idle Mode

915M~1GHz -57dBm 915M~1GHz -57dBm

1G~[A]MHz -47dBm 1G~[A]MHz -47dBm

[A]M~[B]MHz -53dBm [A]M~[B]MHz -53dBm

[B]M~4GHz -47dBm [B]M~4GHz -47dBm

3 Frequency Error ±0.1ppm ±0.1ppm

4 Phase Error

±5(RMS) ±5(RMS)

±20(PEAK) ±20(PEAK)

3dB below reference sensitivity 3dB below reference sensitivity

Frequency Error RA250 : ±200Hz RA250: ±250Hz

5 Under Multipath and HT100 : ±100Hz HT100: ±250Hz

Interference Condition TU50 : ±100Hz TU50: ±150Hz

TU3 : ±150Hz TU1.5: ±200Hz

0 ~ 100kHz +0.5dB 0 ~ 100kHz +0.5dB

200kHz -30dB 200kHz -30dB

250kHz -33dB 250kHz -33dB

Due to 400kHz -60dB 400kHz -60dB

Output RF

modulation 600 ~ 1800kHz -60dB 600 ~ 1800kHz -60dB

6 1800 ~ 3000kHz -63dB 1800 ~ 6000kHz -65dB

Spectrum

3000 ~ 6000kHz -65dB ≥6000kHz -73dB

≥6000kHz -71dB

Due to

400kHz -19dB 400kHz -22dB

Switching

600kHz -21dB 600kHz -24dB

transient

1200kHz -21dB 1200kHz -24dB

1800kHz -24dB 1800kHz -27dB

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LGE Internal Use Only

Only for training and service purposes

2. PERFORMANCE

No Item GSM DCS & PCS

Frequency offset 800kHz

7 Intermodulation attenuation –

Intermodulation product should

be Less than 55dB below the

level of Wanted signal

Power control

Power Tolerance

Power control

Power Tolerance

Level (dBm) (dB) Level (dBm) (dB)

533±3 030±3

631±3 128±3

729±3 226±3

827±3 324±3

925±3 422±3

10 23 ±3 5 20 ±3

8 Transmitter Output Power 11 21 ±3 6 18 ±3

12 19 ±3 7 16 ±3

13 17 ±3 8 14 ±3

14 15 ±3 9 12 ±4

15 13 ±3 10 10 ±4

16 11 ±5 11 8 ±4

17 9 ±5 12 6 ±4

18 7 ±5 13 4 ±4

19 5 ±5 14 2 ±5

15 0 ±5

9 Burst timing Mask IN Mask IN

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LGE Internal Use Only

2. PERFORMANCE

2) Transmitter - WCDMA Mode

No Item Specification

1 Maximum Output Power Class 3 : +24dBm(+1/-3dB)

Class 4 : +21dBm(±2dB)

2 Frequency Error ±0.1ppm

3 Open Loop Power control in uplink ±9dB@normal, ±12dB@extreme

Adjust output(TPC command)

cmd 1dB 2dB 3dB

+1 +0.5/1.5 +1/3 +1.5/4.5

4 Inner Loop Power control in uplink 0 -0.5/+0.5 -0.5/+0.5 -0.5/+0.5

-1 -0.5/-1.5 -1/-3 -1.5/-4.5

Group (10 equel command group)

+1 +8/+12 +16/+24

5 Minimum Output Power -50dBm(3.84MHz)

Qin/Qout : PCCH quality levels

6 Out-of-synchronization handling of output power Toff@DPCCH/Ior : -22 -> -28dB

Ton@DPCCH/Ior : -24 -> -18dB

7 Transmit OFF Power -56dBm(3.84MHz)

8 Transmit ON/OFF Time Mask

±25us

PRACH,CPCH,uplinlk compressed mode

±25us

9 Change of TFC

Power varies according to the data rate

DTX : DPCH off

(minimize interference between UE)

10 Power setting in uplink compressed ±3dB(after 14slots transmission gap)

11 Occupied Bandwidth(OBW) 5MHz(99%)

-35-15*(∆f-2.5)dBc@∆f=2.5~3.5MHz,30k

12 Spectrum emission Mask

-35-1*(∆f-3.5)dBc@∆f=3.5~7.5MHz,1M

-39-10*(∆f-7.5)dBc@∆f=7.5~8.5MHz,1M

-49dBc@∆f=8.5~12.5MHz,1M

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LGE Internal Use Only

Only for training and service purposes

3)Receiver - GSM Mode

2. PERFORMANCE

No Item Specification

13 Adjacent Channel Leakage Ratio(ACLR)

33dB@5MHz, ACP>-50dBm

43dB@10MHz, ACP>-50dBm

-36dBm@f=9~150KHz, 1K BW

-36dBm@f=50KHz~30MHz, 10K BW

-36dBm@f=30MHz~1000MHz, 100K BW

Spurious Emissions -30dBm@f=1~12.5GHz, 1M BW

(*: additional requirement) (*)-41dBm@f=1893.5~1919.6MHz, 300K

(*)-67dBm@f=925~935MHz, 100K BW

(*)-79dBm@f=935~960MHz, 100K BW

(*)-71dBm@f=1805~1880MHz, 100K BW

15 Transmit Intermodulation

-31dBc@5MHz,Interferer -40dBc

-41dBc@10MHz, Interferer -40dBc

16 Error Vector Magnitude (EVM)

17.5%(>-20dBm)

(@12.2K, 1DPDCH+1DPCCH)

17 Transmit OFF Power

-15dB@SF=4.768Kbps, Multi-code

transmission

No Item GSM DCS & PCS

Sensitivity (TCH/FS Class II) -105dBm -105dBm

Co-Channel Rejection

C/Ic=7dB Storage -30 ~ +85

(TCH/FS Class II, RBER, TU high/FH)

3 Adjacent Channel 200kHz C/Ia1=-12dB C/Ia1=-12dB

Rejection 400kHz C/Ia2=-44dB C/Ia2=-44dB

Wanted Signal :-98dBm Wanted Signal :-96dBm

Intermodulation Rejection 1st interferer:-44dBm 1st interferer:-44dBm

2nd interferer:-45dBm 2nd interferer:-44dBm

Blocking Response Wanted Signal :-101dBm Wanted Signal :-101dBm

(TCH/FS Class II, RBER)

Unwanted : Depend on Frequency Unwanted : Depend on Frequency

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LGE Internal Use Only

2. PERFORMANCE

4) Receiver - WCDMA Mode

No Item Specification

1 Reference Sensitivity Level -106.7 dBm(3.84 MHz)

-25dBm(3.84MHz)

2 Maximum Input Level -44dBm/3.84MHz(DPCH_Ec)

UE@+20dBm output power(Class3)

3 Adjacent Channel Selectivity (ACS)

33dB

UE@+20dBm output power(Class3)

-56dBm/3.84MHz@10MHz

4In-band Blocking UE@+20dBm output power(Class3)

-44dBm/3.84MHz@15MHz

UE@+20dBm output power(Class3)

-44dBm/3.84MHz@f=2050~2095 and

2185~2230MHz

UE@+20dBm output power(Class3)

-30dBm/3.84MHz@f=2025~2050 and

5 Out-band Blocking 2230~2255MHz

UE@+20dBm output power(Class3)

-15dBm/3.84MHz@f=1~2025 and

2255~12500MHz

UE@+20dBm output power(Class3)

6 Spurious Response

-44dBm CW

UE@+20dBm output power(Class3)

-46dBm CW@10MHz

7 Intermodulation Characteristic -46dBm/3.84MHz@20MHz

UE@+20dBm output power(Class3)

-57dBm@f=9KHz~1GHz, 100K BW

8 Spurious Emissions -47dBm@f=1~12.5GHz, 1M BW

-60dBm@f=1920MHz~1980MHz, 3.84M BW

-60dBm@f=2110MHz~2170MHz, 3.84M BW

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LGE Internal Use Only

Only for training and service purposes

2. PERFORMANCE

2.4 Current Consumption

(Stand by Test Condition : Bluetooth off, LCD backlight off) (Call Test Condition : Bluetooth off, LCD backlight dimming mode) (VT Test Condition : Speaker off, LCD backlight On)

2.5 RSSI BAR

Stand by Voice Call VT

WCDMA

Under 4.32 mA Under 335 mA Under 569mA

(DRX=1.28) (Tx=10dBm -Low power) (Tx=10dBm -Low power)

Under 4.32 mA Under 380 mA

GSM

(Paging=5period) (Tx=Max power)

Level Change WCDMA GSM

BAR 7 → 6 -86 ± 2 dBm -82 ± 2dBm

BAR 6 → 5 -90 ± 2 dBm -86 ± 2dBm

BAR 5 → 4 -94 ± 2 dBm -90 ± 2dBm

BAR 4 → 3 -98 ± 2 dBm -94 ± 2dBm

BAR 3 → 2 -102 ± 2 dBm -98 ± 2dBm

BAR 2 → 1 -106 ± 2 dBm -102 ± 2dBm

BAR 1 → 0 -110 ± 2 dBm -106 ± 2dBm

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LGE Internal Use Only

2.6 Battery BAR

2. PERFORMANCE

Indication Standby

Bar 7 3.96 ± 0.05V

Bar 7 → 6 3.95 ± 0.05V

Bar 6 → 5 3.86 ± 0.05V

Bar 5 → 4 3.78 ± 0.05V

Bar 4 → 3 3.74 ± 0.05V

Bar 3 → 2 3.69 ± 0.05V

Bar 2 → 1 3.63 ± 0.05V

Bar 1 → Empty 3.50 ± 0.05V

Low Voltage, 3.63,3.50 ± 0.05V (Stand-by) / 3.63, 3.50 ± 0.05V (Talk)

Warning message + tone Bar 2 → 1 / Bar 1 → Empty

Power Off 3.20 ± 0.05V

- 16 -

LGE Internal Use Only

Only for training and service purposes

2. PERFORMANCE

2.7 Sound Pressure Level

2.8 Charging

- Charging Method : CC & CV (Constant Current & Constant Voltage)

- Maximum Charging Voltage : 4.2V

- Maximum Charging Current : 650mA

- Nominal Battery Capacity : 950 mAh

- Charger Voltage : 4.8V

- Charging time : Max 3 h (Except time trickle charging)

- Full charge indication current (icon stop current) : 60mA

- Low battery POP UP : 3.48V

- Low battery alarm interval : Idle - 3 min, Dedicated - 1min

- Cut-off voltage : 3.22V

No Test Item Specification

1 Sending Loudness Rating (SLR) 8 ±3 dB

2 Receiving Loudness Rating (RLR)

Nor -4 ± 3 dB

Max -15 ± 3 dB 3 Side Tone Masking Rating (STMR) Min 17 dB 4 Echo Loss (EL) Min 40 dB 5 Sending Distortion (SD) Refer to Table 30.3 6 Receiving Distortion (RD) Refer to Table 30.4 7 Idle Noise-Sending (INS) Max -64 dBm0p

8 Idle Noise-Receiving (INR)

Nor Under -47 dBPA

Max Under -36 dBPA 9 Sending Loudness Rating (SLR) 8±3dB

10 Receiving Loudness Rating (RLR)

Nor -1 ±3 dB

Max -12 ±3 dB

11 Side Tone Masking Rating (STMR) Min 25 dB 12 Echo Loss (EL) Min 40 dB 13 Sending Distortion (SD) Refer to Table 30.3 14 Receiving Distortion (RD) Refer to Table 30.4 15 Idle Noise-Sending (INS) Max -55 dBm0p

16 Idle Noise-Receiving (INR)

Nor Under -45 dBPA

Max Under -40 dBPA

TDMA Noise

-. GSM : Power Level : 5

DCS/PCS : Power Level : 0

(Cell Power : -90 ~ -105 dBm)

-. Acoustic (Max Vol.)

MS/Headset SLR : 8 ±3dB

MS/Headset RLR : -15 ± 3dB/-12dB

(SLR/RLR : Mid-value setting)

Headset

MS and

Headset

Max

Under -62 dBm

- 17 -

LGE Internal Use Only

3. TECHNICAL BRIEF

3.1 General Description

The KS10 supports UMTS-2100 DS-WCDMA, EGSM-900, DCS-1800, and PCS-1900. All receivers and the UMTS transmitter use the radio One1Zero-IF architecture to eliminate intermediate frequencies, directly converting signals between RF and baseband. The EGSM, DCS1800 and PCS1900 transmitters use a baseband-to-IF up-conversion followed by an offset phase-locked loop that translates the GMSK-modulated signal to RF.

QUALCOMM’s branded chipset that implements a Zero-IF radio architecture.

3. TECHNICAL BRIEF

KS10 high-level RF functional block diagram

- 18 -

LGE Internal Use Only

Only for training and service purposes

A generic, high-level functional block diagram of KS10 is shown in Figure 1-1. One antenna collects base station forward link signals and radiates handset reverse link signals. The antenna connects with receive and transmit paths through a switch module (plus a duplexer for UMTS-2100 operation).

UMTS band signals at the antenna are switched to the relevant UMTS duplexer. The UMTS receive band signals are amplified by the front-end LNAs of the RFR6250 IC before passing through a bandpass filter and being applied to the mixer inputs of the RFR6250 IC. On-chip circuits down-convert the received signal directly from RF to baseband using radioOne Zero-IF techniques. Generation and distribution of the UMTS LO, for the down-converter, is performed entirely on-chip (except for the loop filter). The RFR6250 IC outputs analog baseband signals for processing by the MSM device. This baseband interface is shared with the RTR6250 GSM receiver outputs, but is separate from the GPS baseband interface.

EGSM, DCS and PCS receive signals from the antenna switch module pass through their band-pass filters, then are applied to the RTR6250 IC. In a similar fashion to the UMTS paths, RTR6250 IC circuits down-convert the received signals directly from RF to baseband. The GSM LO for multiband down conversion is entirely generated within the RTR6250 IC (PLL and distribution functions) with exception of the off-chip loop filter. The RTR analog baseband outputs are routed to the MSM6275 IC for further processing (an interface shared with the RFR UMTS receive paths).

The UMTS transmit path begins with analog baseband signals from the MSM device that drive the RTR6250 IC. Integrated PLL and VCO circuits generate the Tx LO used in the quadrature upconverter that translates baseband signals directly to RF. The RTR6250 output driver stages deliver fairly highlevel signals that are filtered and applied to the power amplifiers (PA). The PA output is routed to the antenna through a duplexer and switch module.

The shared EGSM-900, DCS-1800, and PCS-1900 transmit path begins with the same baseband interface from the MSM6275 IC that is used for the UMTS band. A single EGSM/DCS/PCS quadrature upconverter translates the GMSK-modulated signal to a convenient intermediate frequency (IF) that forms one input to an offset phase-locked loop (OPLL). OPLL functions are split between the RTR6250 IC and off-chip loop filter and dual Tx VCO circuits, and translate the GMSK-modulated signal to the desired EGSM-900, DCS-1800 or PCS-1900 channel frequency. This signal is applied to a dual power amplifier (only one is active at a time). The enabled path continues with the PA, an automated power control (APC) circuit that samples the transmit power and adjusts its level, the switch module (which includes a band-appropriate lowpass filter), and the antenna.

KS10 power supply voltages are managed and regulated by the PM6250 Power Management IC. This versatile device integrates all wireless handset power management, general housekeeping, and user interface support functions into a single mixed signal IC. It monitors and controls the external power source and coordinates battery recharging while maintaining the handset supply voltages using low dropout, programmable regulators.

The device’s general housekeeping functions include an ADC and analog multiplexer circuit for monitoring on-chip voltage sources, charging status, and current flow, as well as userdefined off-chip variables such as temperature, RF output power, and battery ID. Various oscillator, clock, and counter circuits support IC and higher-level handset functions. Key parameters such as under-voltage lockout and crystal oscillator signal presence are monitored to protect against detrimental conditions.

3. TECHNICAL BRIEF

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LGE Internal Use Only

3. TECHNICAL BRIEF

3.2 GSM Mode

3.2.1 GSM Receiver

The Dual-mode KS10’s receiver functions are split between the two RFICs as follows:

• UMTS-2100 operation uses the RFR6250 Receiver ICs to implement the receive signal path, accepting an RF input and delivering analog baseband outputs (I and Q).

• EGSM-900, DCS-1800, and PCS-1900 modes both use the RTR6250 IC only. Each mode has independent front-end circuits and down-converters, but they share common baseband circuits (with only one mode active at a time). All receiver control functions are beginning with SBI2-controlled parameters.

The EGSM, DCS, and PCS receiver inputs of RTR6250 are connected directly to the transceiver frontend circuits(filters and antenna switch module). EGSM, DCS, and PCS receiver inputs are similar to the RFR6250 UMTS Rx input in that they also use differential configurations to improve commonmode rejection and second-order non-linearity performance.

The balance between the complementary signals is critical and must be maintained from the RF filter outputs all the way into the IC pins Since EGSM, DCS, and PCS signals are time-division duplex (the handset can only receive or transmit at one time), switches are used to separate Rx and Tx signals in place of frequency duplexers - this is accomplished in the switch module.

The EGSM, DCS, and PCS receive signals are routed to the RTR6250 through band selection filters and matching networks that transform single-ended 50-Ω sources to differential impedances optimized for gain and noise figure. Similar to the RFR, the RTR input uses a differential configuration to improve second-order inter-modulation and common mode rejection performance. The RTR6250 input stages include MSM-controlled gain adjustments that maximize receiver dynamic range.

The amplifier outputs drive the RF ports of the quadrature RF-to-baseband downconverters. The downconverted baseband outputs are multiplexed and routed to lowpass filters (one I and one Q) having passband and stopband characteristics suitable for GMSK processing. These filter circuits include DC offset corrections. The filter outputs are buffered and passed on to the MSM6275 IC for further processing (an interface shared with the RFR6250 UMTS receiver outputs).

The RFIC operating modes and circuit parameters are MSM-controlled through the proprietary 3-line Serial Bus Interface (SBI). The Application Programming Interface (API) is used to implement SBI commands. The API is documented in AMSS Software - please see applicable AMSS Software documentation for details.

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LGE Internal Use Only

Only for training and service purposes

3. TECHNICAL BRIEF

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LGE Internal Use Only

3. TECHNICAL BRIEF

3.2.2 GSM Transmitter

The shared GSM Low-band (EGSM900) and High-band (DCS1800, PCS1900) transmit path begins with the baseband inputs from the MSM6275 IC. These differential analog input signals are buffered, lowpass filtered, corrected for DC offsets then applied to the GSM quadrature upconverter. The upconverter LO signals are generated from the transceiver VCO signal by the LO distribution and generation circuits within RTR6250. This upconverter translates the GMSK-modulated signal to a convenient intermediate frequency (IF) that forms one input to a frequency/phase detector circuit. This IF signal is the reference input to an offset phase-locked loop (OPLL) circuit as shown in Figure 1.2.2-1.

The feedback path of this OPLL circuit includes a downconversion from the RF output frequency range to the IF range. The two inputs to this downconversion mixer are formed as follows:

1. The dual Tx VCO output (operating in the desired RF output frequency range) is buffered within the

RTR6250 IC then applied to the mixer RF port.

2. The LO Generation and Distribution circuits that deliver the transmit path.s LO for the baseband-to-IF

upconversion also provides the offset LO signal that is applied to the feedback path.s mixer LO port.

Figure 1.2.2-1 Offset phase-locked loop interfaces

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The mixer IF port output is the offset feedback signal - the variable input to the frequency/phase detector circuit. The detector compares its variable input to its reference input and generates an error signal that is lowpass filtered by the loop filter and applied to the dual Tx VCO tuning port to force the VCO output in the direction that minimizes errors. As mentioned earlier, the VCO output is connected to the feedback path thereby creating a closed-loop control system that will force frequency and phase errors between the variable and reference inputs to zero.

The waveform at the dual Tx VCO output is the GMSK-modulated signal centered at the desired GSM channel frequency. A phase-locked loop circuit is used to translate the GMSKmodulated signal from IF to RF primarily for two reasons:

1. Phase-locked loops provide a lowpass filter function from the reference input to the VCO output. These results in a bandpass function centered at the desired channel frequency that provides steep, well-controlled rejection of the out-of-band spectrum.

2. The resulting output bandpass function is virtually unchanged as the transmitter is tuned over channels spanning the GSM operating band.

The PA is a key component in any transmitter chain and must complement the rest of the transmitter precisely. For GSM band operation, the closed-loop transmit power control functions add even more requirements relative to the UMTS PA. In addition to gain control and switching requirements, the usual RF parameters such as gain, output power level, several output spectrum requirements, and power supply current are critical. The gain must be sufficient and variable to deliver the desired transmitter output power given the VCO output level, the subsequent passive devices’ losses, and the control set point. The maximum and minimum transmitter output power levels depend upon the operating band class and mobile station class per the applicable standard. Transmitter timing requirements and in-band and out-of-band emissions, all dominated by the PA, are also specified by the applicable standard.

The active dual Tx VCO output is applied to the dual power amplifier to continue the transmit path, and feedback to the RTR6250 IC to complete the frequency control loop. The PA operating band (EGSM or DCS/PCS) is selected by the MSM device GPIO control. (GSM_PA_BAND).

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3.3 WCDMA Mode

3.3.1 Receiver

The UMTS duplexer receiver output is routed to LNA circuits within the RFR6250 IC. The LNA gain is dynamically controlled by the MSM6275 IC to cover full receiver dynamic range and to save current consumption. The UMTS LNA output is routed to the down conversion mixer inputs, in the RFR6250 IC, through a band selection filter that transforms a single-ended 50-Ω source to differential 100-Ω load impedance that is matched to the RFR6250 IC. The RFR input uses a differential configuration to improve secondorder inter-modulation and common mode rejection performance. The RFR6250 IC input stages include MSM-controlled gain adjustments that further extend receiver dynamic range.

The amplifier output drives the RF port of the quadrature RF-to-baseband down-converter. The downconverted baseband outputs are routed to low-pass filters (one I and one Q) having pass-band and stop-band characteristics suitable for DS-WCDMA processing. The filter outputs are buffered and passed on to the MSM6275 IC for further processing. This baseband interface is shared with the RTR6250 GSM receiver outputs.

The RFR6250 IC includes LO generation and distribution circuitry to reduce off-chip component requirements. The GPS RX LO source is created using the PLL control elements of the RTR6250 PLL2, via a discrete loop filter components, in tandem with the VCO in the RFR6250. Using only this PLL signal, the RFR6250 LO generation and distribution circuits create the necessary LO signals for the UMTS quadrature down-converter. By definition, the ZIF down-converter requires FLOequal to FRF, and the RTR6250/RFR6250 design achieves this without allowing F

VCO

to equal FRF.

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Figure 1.3.1-1 RFR6250 IC functional block diagram

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3.3.2 Transmitter

The UMTS transmit path begins with analog baseband signals from the MSM device that drive the RTR6250 IC. The RTR6250 IC provides all the UMTS transmitter active signalpath circuits except the power amplifiers. Analog (I and Q) differential signals from the MSM device are buffered, filtered, and applied to Baseband-to-RF quadrature upconverters. Gain control is implemented on-chip. The RF outputs include an integrated matching inductor, reducing the off-chip matching network to a single series capacitor.

The RTR6250 UMTS output is routed to its power amplifier through a bandpass filter, and delivers fairly high-level signals that are filtered and applied to the PA. The PA device used in KU950 is “Load Insensitive PA”- no need to use isolator - and routed to the duplexer Tx port directly. Transmit power is delivered from the duplexer to the antenna through the switch module.

The RTR6250 IC integrates LO generation and distribution circuits on-chip, substantially reducing offchip requirements. Various modes and programmable features result in a highly flexible transceiver LO output that supports not only UMTS transmissions, but all EGSM900 and DCS1800/PCS1900 Rx and Tx modes as well.

The UMTS Tx LO (PLL1) is generated almost entirely on-chip, requiring only the loop filter off-chip (two capacitors and two resistors); all UMTS Tx VCO and PLL circuits are on-chip. An internal RTR6250 switch routes the internal VCO signal to the LO generation and distribution circuits to create the necessary UMTS Tx LO signals.

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3.4 LO Phase-locked Loop

Most LO functions are fully integrated on-chip, do not require user adjustment, and need not be considered by handset designers. QUALCOMM has established and implemented frequency plans and LO generation schemes that support the radioOne 6250-IIseries chipset while requiring minimal off-chip design effort. Only one area requires handset designer attention: the loop filters of each phase-locked loop (PLL).

3.4.1 UMTS Rx PLL (PLL2)

UMTS Rx LO functional blocks are distributed between the RFR6250 IC, RTR6250 IC, and external UMTS_RX_CH_VCO and loop filter components (Figure 1.4.1-1). The external UMTS_RX_CH_VCO must be enabled for UMTS Rx operation and disabled otherwise; a dedicated MSM6275 IC signal (UHF_VCO_EN ) enables the VCO.

3. TECHNICAL BRIEF

Figure 1.4.1-1 UMTS Rx PLL functional block diagram

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The RFR6250 IC accommodates single-ended or differential LO inputs; if single-ended, either pin can be active. AC-couple the inactive pin to ground using an appropriately valued capacitor (12 pF is used in KS10). The 27 pF capacitor should be used to AC-couple the active pin to the VCO signal. Using only the selected VCO signal, the RFR6250 IC LO generation and distribution circuits create the necessary LO signals for the active quadrature downconverter.

A sample of the downconverter LO is buffered and routed from RFR6250 IC pin 19 to RTR6250 IC pin 32 (RX_VCO_IN). This signal requires a terminating resistor near the RTR6250 IC input pin and an AC coupling capacitor that assures the internal RTR6250 IC biasing is not disrupted in the example. Good microstrip or stripline controlled-impedance techniques must be used.

Most UMTS Rx PLL circuits are included within the RTR6250 IC: reference divider, phase detector, charge pump, feedback divider, and digital logic that generate LOCK status. The buffered 19.2 MHz TCXO signal provides the synthesizer input (REF), the frequency reference to which the PLL is phase and frequency locked. The reference is divided by the RCounter to create a fixed frequency input to the phase detector, FR. The other phase detector input (FV) varies as the loop acquires lock, and is generated by dividing the RX_VCO_IN frequency using the feedback path.s N-Counter. The closed loop will force FV to equal FR when locked. If the loop is not locked the error between FV and FR will create an error signal at the output of the charge pump. This error signal is filtered by the loop filter and applied to the VCO, tuning the output frequency such that the error is decreased. Ultimately the loop forces the error to approach zero and the PLL is phase and frequency locked.

Many key PLL performance characteristics are largely determined by the loop filter design - stability, transitory response, settling time, and phase noise.

3.4.2 Transceiver PLL (PLL1)

All LO functional blocks for the other handset modes(UMTS Tx, EGSM Tx/Rx, DCS Tx/Rx, PCS Tx/Rx) are integrated into the RTR6250 IC except the loop filter components (Figure 1.4.2-1). On-chip circuits include reference divider, phase detector, charge pump, VCO, feedback divider, and digital logic status. The functional description given in Section 1.4.1 for the UMTS Rx PLL applies to the Transceiver PLL as well.

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The off-chip loop filter allows optimization of key PLL performance characteristics (stability, transitory response, settling time, and phase noise) for different applications. Guidelines are provided in the next subsection for proper implementation of this critical circuit.

3. TECHNICAL BRIEF

Figure 1.4.2-1 Transceiver PLL functional block diagram

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3.5 Off-chip RF Components

3.5.1 Front End Module(FL500)

Front End module integrates antenna switch module and GSM Rx filter. The antenna switch module allows multiple operating bands and modes to share the same antenna. In the KS10 design, a common antenna connects to one of six paths:

1) UMTS-2100 Rx/Tx, 2) EGSM Rx, 3) DCS-1800 Rx, 4) PCS-1900 Rx, 5)EGSM Tx, and 6) DCS1800, PCS-1900 Tx. UMTS operation requires simultaneous reception and transmission, so the UMTS Rx/Tx connection is routed to a duplexer that separates receive and transmit signals. GSM band of operation is time division duplexed, so only the receiver or transmitter is active at any time and a frequency duplexer is not required. The module includes lowpass filters for the GSM bands transmit paths to reduce out-of-band emissions, PA harmonics in particular.

The GSM mode RF filters are located before their LNAs, so their insertion losses are extremely critical (1.3 dB typical). Other important parameters are:

■ Out-of-band rejection or attenuation levels

❏ Far out-of-band signals - ranging from DC up to the first band of particular concern and from the

last band of particular concern to beyond three times the highest passband frequency.

❏ Frequencies of particular concern . bands known to include other wireless transmitters that may

deliver significant power levels to the receiver input.

❏ GSM band receivers operate while the handset transmitters are off so there are no Txband

leakage attenuation requirements.

■ Phase and amplitude balance - the UMTS discussion presented above applies for GSM bands as

well. See the data sheet for specific values. Of course, passband ripple and return loss are still important in all cases for the same reasons explained in the antenna switch module and duplexer sections.

3.5.2 UMTS duplexer (U506)

A UMTS duplexer splits a single operating band into receive and transmit paths. Important performance requirements include:

- Insertion loss . this component is also in the receive and transmit paths; In the KS10 typical losses:

UMTS Tx = 1.45 dB, UMTS Rx = 1.86 dB.

- Out-of-band rejection or attenuation . the duplexer provides input selectivity for the receiver, output

filtering for the transmitter, and isolation between the two. Rejection levels for both paths are specified over a number of frequency ranges. Two Tx-to-Rx isolation levels are critical to receiver performance:

- Rx-band isolation . the transmitter is specified for out-of-band noise falling into the Rx band. This

noise leaks from the transmit path into the receive path, and must be limited to avoid degrading receiver sensitivity. The required Rx-band isolation depends on the PA out of-band noise levels and Rx-band losses between the PA and LNA. Typical duplexer Rx band isolation value is 51 dB.

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- Tx-band isolation . the transmit channel power also leaks into the receiver. In this case, the leakage is outside the receiver passband but at a relatively high level. It combines with Rx band jammers to create cross-modulation products that fall in-band to desensitize the receiver. The required Tx-band isolation depends on the PA channel power and Tx-band losses between the PA and LNA. Typical duplexer Tx-band isolation value is 57 dB.

- Passband ripple . the loss of this fairly narrowband device is not flat across its passband. Passband ripple increases the receive or transmit insertion loss at specific frequencies, creating performance variations across the bands channels, and should be controlled.

- Return loss . minimize mismatch losses with typical return losses of 10 dB or more (VSWR <2:1).

- Power handling. high power levels in the transmit path must be accommodated without degraded performance. The specified level depends on the operating band class and mobile station class (per the applicable standard), as well as circuit losses and antenna EIRP. Several duplexer characteristics depend upon its source and load impedances. QUALCOMM strongly recommends an isolator be used between the UMTS PA and duplexer to assure proper performance.

3.5.3 UMTS Power Amplifier (U505)

The AWT6277 meets the increasing demands for higher output power in UMTS handsets. The PA module is optimized for VREF = +2.85 V, a requirement for compatibility with the Qualcomm® 6250 chipset. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-ofthe-art reliability, temperature stability, and ruggedness. Selectable bias modes that optimize efficiency for different output power levels, and a shutdown mode with low leakage current, increase handset talk and standby time. The self-contained 4 mm x 4 mm x 1.1 mm surface mount package incorporates matching networks optimized for output power, efficiency, and linearity in a 50 Ω system.

3. TECHNICAL BRIEF

Figure 1.5.3-1 UMTS PA functional block diagram

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3.5.4 Thermistor (R527)

This thermistor senses temperature variations around UMTS PA to adjust PA gain deviation for assure compliance with the applicable transmit power control standards. Negative temperature compensation thermistor is used in the KS10.

3.5.5. UMTS transmit power detector (U504)

This detector couples PA output power level to calibrate the transmitter characteristic over the channel variation and temperature. Its detector coupling range and converted voltage is based on diode sensitivity and transmitter power level. The KS10 uses National Semiconductor ADL5500 power detector IC. In Figure 1.5.5-1, C580 is set to 47ohm&Coupler resulting in an attenuation of 31.4dB. The output voltage is proportional to the logarithm of the input power. Figure1.5.5-2 shows the output voltage versus PA output power of the ADL5500 setup as depicted in Figure1.5.5-1

Figure 1.5.5-1 Block diagram of ADL5500 with resistive tap

Figure 1.5.5-2 Power detector response, Vout vs PA output power

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