Lenovo ThinkStation P-Series Memory Configuration [en, ar, bg, cs, da, de, el, es, fi, fr, he, hr, hu, it, ja, ko, nb, nl, pl, pt, pt, ro, ru, sh, sk, sl, sr, sv, th, tr, uk, zc, zh]

ThinkStation P-Series Memory
Version 1 . 1
1. Version History
Version
Date Released
V1.0
V1.1
5/20/2015
2. Introduction
With the launch of the new P-Series line of ThinkStation systems, new memory technology is being introduced with the onset of DDR4. DDR4 memory design differs from its DDR3 predecessor in several ways.
Physical DIMM Differences
DDR4 memory uses a 284-pin DIMM module as compared to a 240-pin DIMM module for DDR3. Physical DIMM size for DDR4 is very close to that of DDR3 due to the decreased pin pitch for the DDR4
modules (allows more pins over the same area).
DDR4 sockets differ from DDR3 sockets and they are not interchangeable.
Operating Voltage
DDR4 operates at a standard voltage of 1.2V compared to the standard voltage of 1.5V for DDR3. This
lowered operating voltage results in lower power consumption.
Frequencies Supported
DDR4 is capable of supporting frequencies ranging from 1600MHz to 3200MHz. Consequently, DDR3
frequencies ranged from 800MHz to 2133MHz.
3. Supported DDR4 Memory Types
The new ThinkStation P500, P700, and P900 platforms will each support three unique types of DDR4 memory at launch. These three DIMM types are UDIMM, RDIMM, and LRDIMM, and are described below:
UDIMM – Unregistered DIMM
Individual DRAMs connect directly to the controller. Low latency, low density. Ideal for single DIMM per
channel applications where low latency is required.
RDIMM – Registered DIMM
Onboard register buffers the address and command signals (but not data). Lower loading allows for higher
density DIMMs and higher overall memory capacity compared to UDIMM.
LRDIMM – Load Reduced DIMM
Data, address, and command signals are all routed through an onboard memory buffer, which results in a
greatly reduced electrical load and maximum memory capacities.
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