Sample Application Programs Guide Book
Agilent 4155C Semiconductor Parameter Analyzer
Agilent 4156C Precision Semiconductor Parameter Analyzer
Agilent Part No. 04156-90070
Printed in Japan January 2001
Edition 1
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2 Agilent 4155C/4156C Sample Application Programs Guide Book, Edition 1
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Printing History
Edition 1: January 2001
Agilent 4155C/4156C Sample Application Programs Guide Book, Edition 1 3
In This Manual
This manual describes some sample application programs and setup files, which will be
helpful for creating your own applications using Agilent 4155C/4156C.
All programs and setup files described in this manual are stored on the Sample Application
Program Disk (DOS formatted, 3.5-inch diskette) that is furnished with your
4155C/4156C. All programs are written in the Instrument BASIC, and ready to run in the
4155C/4156C’s built-in Instrument BASIC environment.
This manual covers the following applications:
• V- RA M P
• J-RAMP
• SWEAT
• GO/NO-GO Test
• HCI Degradation Test
• Charge Pumping
• Flash EEPROM Test
• TDDB
• Electromigration
CAUTION These programs are only examples, so you may need to modify these programs and setup
files for your own application before executing. If these example programs damage your
devices, Agilent Technologies is NOT LIABLE for the damage.
NOTE You should copy all files in the Sample Application Program Disk to a diskette that you
will use as your working diskette, and keep the original diskette as backup.
4 Agilent 4155C/4156C Sample Application Programs Guide Book, Edition 1
Contents
1. V-RAMP
Theory of V-Ramp Test Procedure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-3
V-Ramp Test Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-3
Initial Test . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-4
Post Stress Test . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-4
Ramp Stress Test . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-5
Failure Categorization and Data Recording . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-7
Basic Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-8
Methodology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-8
Required Equipment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-16
Files on the Diskette . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-16
Executing the VRAMP Program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-17
Flowchart of Sample VRAMP Program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-18
Customization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-20
Using an External Computer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-20
Specifying Setup File to Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-21
File for Saving Measurement Results . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-21
Setting up Input Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-22
Searching for 10 ¥ Iexpect . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-23
Measurement Setups . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-24
Setups for Initial and Post Stress Tests . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-24
Setups for Ramped Stress Test . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-24
2. J-RAMP
Theory of J-Ramp Test Procedure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-3
J-Ramp Test Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-3
Initial Test . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-4
J-Ramp Stress Test . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-5
Post Stress Test . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-7
Failure Categorization and Data Recording . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-8
Basic Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-9
Methodology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-9
Required Equipment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-20
Program Files Required . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-20
Executing the JRAMP Program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-20
Flowchart of Sample JRAMP Program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-22
Customization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-24
Using an External Computer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-24
Specifying Setup File to Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-25
Agilent 4155C/4156C Sample Application Programs Guide Book, Edition 1 Contents - 1
Contents
File for Saving Measurement Results . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-25
Setting up Input Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-26
When SMU Lacks Power to Break Oxide . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-27
Measurement Setups . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-28
Setups for Initial and Post Stress Tests . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-28
Setups for Ramped Stress Test . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-28
Proof of Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-36
Step Increase Factor (F). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-36
Step Time (Step_time) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-36
Current Stop Value (Istop) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-36
3. SWEAT
SWEAT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-3
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-3
Input Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-4
Initial Resistance (Rinit) Measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-5
CTTF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-5
Rfail . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-5
Exit Condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-5
Output Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-6
Basic Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-7
Methodology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-7
Required Equipment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-10
Files on the Diskette . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-10
Execution . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-11
Sample SWEAT Program Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-12
Customization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-13
Using External Computer or Built-in Controller . . . . . . . . . . . . . . . . . . . . . . 3-13
Specifying Setup File to Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-13
File for Saving Measurement Results . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-14
Setting up Input Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-15
Setting up Input Parameters Related to CTTF Calculation . . . . . . . . . . . . . . . 3-15
How to Reduce the Settling Time of CTTF . . . . . . . . . . . . . . . . . . . . . . . . . . 3-16
Defining JSTART . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-18
Current Adjustment Routine . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-18
Setup files . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-19
Setup File for Initial Resistance Measurement . . . . . . . . . . . . . . . . . . . . . . . . 3-19
Setup File for Stress/Resistance Measurement . . . . . . . . . . . . . . . . . . . . . . . . 3-19
Contents - 2 Agilent 4155C/4156C Sample Application Programs Guide Book, Edition 1
Contents
4. Go/NO-GO
GONOGO Sample Program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-3
Basic Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-5
Required Equipment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-5
Files on the Diskette . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-5
Sample Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-6
Connection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-6
Execution . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-7
Viewing All Curves while Measurement is in Progress . . . . . . . . . . . . . . . . . 4-10
Viewing Only Results while Measurement is in Progress . . . . . . . . . . . . . . . . 4-11
Viewing a Particular Measurement Curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-12
Changing Limits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-13
Displaying Statistical Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-13
Exporting Data to Spreadsheet . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-14
Customization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-15
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-15
Hints to Use with Handler . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-21
5. HCI Degradation Test
Hot-Carrier-Induced (HCI) Degradation Test . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-3
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-3
Determining Stress Bias Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-4
Selecting Test Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-4
Initial Characterization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-4
Parameter Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-5
Stress Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-6
Interim Characterization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-6
Stress Termination . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-6
Precautions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-6
Technical Requirements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-7
HCI Degradation Test Data Analysis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-8
Basic Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-11
Methodology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-11
Input Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-11
HCI Degradation Test . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-15
HCI Degradation Data Analysis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-16
Required Equipment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-17
Files on the Diskette . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-18
Execution . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-19
Sample HCI Degradation Test Program (DCDAHC) Overview . . . . . . . . . . . 5-27
Agilent 4155C/4156C Sample Application Programs Guide Book, Edition 1 Contents - 3
Contents
Sample HCI Degradation Test Data Analysis Program (ANALYSIS) Overview 5-30
Customization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-32
Using External Computer or Built-in Controller . . . . . . . . . . . . . . . . . . . . . . 5-32
Modifying and Specifying Setup File to Load . . . . . . . . . . . . . . . . . . . . . . . . 5-33
Changing File for Saving Measurement Results . . . . . . . . . . . . . . . . . . . . . . . 5-34
Changing Input Parameters for HCI Degradation Test . . . . . . . . . . . . . . . . . . 5-35
To Change Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-37
To Change Number of Test Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-37
Changing the Cumulative Stress Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-38
Skipping Determination of Gate Stress Bias Condition . . . . . . . . . . . . . . . . . 5-38
Reducing the Interval between Stress and Interim Measurement . . . . . . . . . . 5-39
Selecting Parameter Shift Graphs to Draw . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-39
If You Don't Use Switching Matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-40
Using Another Switching Matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-40
Performing HCI Degradation Test with AC Stress . . . . . . . . . . . . . . . . . . . . . 5-41
Performing Reverse Mode Test . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-42
Changing Input Parameters for Test Data Analysis . . . . . . . . . . . . . . . . . . . . 5-43
Not to Pause Program after each Tdc Extraction . . . . . . . . . . . . . . . . . . . . . . 5-43
Changing File Name to save Calculated Average Tdc . . . . . . . . . . . . . . . . . . 5-43
Setup Files . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-44
Setup File for Id-Vd Measurement to Determine Drain Stress Voltage . . . . . 5-44
Setup File for Ib-Vg Measurement to Determine Gate Stress Voltage . . . . . . 5-46
Setup File for Gate Leakage Current Measurement . . . . . . . . . . . . . . . . . . . . 5-49
Setup File for Initial/Interim Characterization . . . . . . . . . . . . . . . . . . . . . . . . 5-52
Setup File for DC Stress . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-55
Setup File for AC Stress . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-56
6. Charge Pumping
Charge Pumping Methods . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-3
Square Pulse Method . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-3
Triangular Pulse Method . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-3
Trapezoidal Pulse Method . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-3
Equipment Required . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-4
Square Pulse Method . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-5
To Extract Interface-state Density . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-5
Program Files Required . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-7
Sample Setup File . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-7
To Execute the Sample Program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-10
Square Pulse Method without Program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-13
Requirement . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-13
Contents - 4 Agilent 4155C/4156C Sample Application Programs Guide Book, Edition 1
Contents
Sample Setup File . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-13
To Execute the Measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-16
Triangular Pulse Method . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-17
To Extract Interface-state Density . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-18
To Extract Capture Cross Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-19
Program Files Required . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-20
Sample Setup File . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-20
To Execute the Sample Program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-24
Trapezoidal Pulse Method . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-27
To Extract Interface-state Density . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-28
Program Files Required . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-30
Sample Setup File . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-30
To Execute the Sample Program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-33
Program Modification Examples . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-36
To Change the Initial Value of Input Parameters . . . . . . . . . . . . . . . . . . . . . . . 6-36
To Change the Measurement Unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-42
To Change the Destination of the File Operation . . . . . . . . . . . . . . . . . . . . . . 6-45
7. Flash EEPROM Test
Program Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-3
Device Connection for NOR type flash EEPROM . . . . . . . . . . . . . . . . . . . . . . 7-3
Device Connection for NAND type flash EEPROM . . . . . . . . . . . . . . . . . . . . . 7-4
Main Program. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-5
Stress_loop . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-7
Vth_meas . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-8
Program Customization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-9
Subprogram “Test_setting” . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-9
Measurement setup file for Vth measurement (for NOR type) . . . . . . . . . . . . 7-10
Stress setup file for write pulse of NOR type. . . . . . . . . . . . . . . . . . . . . . . . . . 7-11
Stress setup file for erase pulse of NOR type. . . . . . . . . . . . . . . . . . . . . . . . . . 7-11
Stress setup file for write pulse of NAND type . . . . . . . . . . . . . . . . . . . . . . . . 7-12
Stress setup file for erase pulse of NAND type . . . . . . . . . . . . . . . . . . . . . . . . 7-12
Program Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-13
8. Time Dependent Dielectric Breakdown (TDDB)
Application Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8-3
Customization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8-4
Agilent 4155C/4156C Sample Application Programs Guide Book, Edition 1 Contents - 5
Contents
9. Electromigration
Application Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9-3
Customization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9-4
Contents - 6 Agilent 4155C/4156C Sample Application Programs Guide Book, Edition 1
1V-RAMP
V-RAMP
Voltage-Ramped (V-Ramp) test is one of the Wafer Level Reliability (WLR) tests, which is
used to evaluate device reliability on a wafer. This test can provide quick evaluation data
for estimating the overall reliability of thin oxides, and this data can be used to improve the
thin oxide manufacturing process.
With the thickness of oxide shrinking along with device geometries, creating a reliable thin
oxide has become an important issue. The integrity of the thin oxide in a MOS device is a
dominant factor in determining the overall reliability of a micro-circuit. The V-Ramp test
can promptly give useful feedback to the manufacturing process about oxide reliability.
This operation manual covers a sample V-Ramp program running on Agilent 4155/4156,
and how to use and customize the program. The program is written in the Instrument
BASIC (IBASIC), and is ready to run on the built-in IBASIC controller of the 4155/4156.
“Theory of V-Ramp Test Procedure” describes basic theory, procedure, and terminology of
the V-Ramp test.
“Basic Operation” describes the V-Ramp sample program. Included are V-Ramp
methodology using the 4155/4156, how to execute the sample program, and program
overview.
“Customization” describes how to customize the sample program. This is very helpful
because you probably need to modify the sample program to suit your test device.
“Measurement Setups” shows the 4155/4156 page settings that are stored in the setup files.
1-2 Agilent 4155C/4156C Sample Application Programs Guide Book, Edition 1
V-RAMP
Theory of V-Ramp Test Procedure
Theory of V-Ramp Test Procedure
This section describes the Voltage-Ramped (V-Ramp) Test procedure. Included are basic
theory, procedure, and terminology of V-Ramp test. The V-Ramp test procedure is based on
JEDEC standard No.35.
V-Ramp Test Overview
V-Ramp test measures the breakdown voltage (Vbd) and breakdown charge (Qbd) of thin
oxide capacitors, which you designed as test structures on the wafer. These results are used
to evaluate the oxide integrity. The higher the Vbd and Qbd measured by this test, the better
the integrity of the oxide on wafer.
You extract these two parameters from a large amount of test structures and extracted
parameters are used for standard process control to quickly evaluate oxide integrity.
In the V-Ramp test, an increasing voltage is forced to the oxide capacitor until the oxide
layer is broken. Breakdown voltage (Vbd) is defined as the voltage at which breakdown
occurs. And breakdown charge (Qbd) is the total charge forced through the oxide until the
breakdown occurs.
Figure 1-1 shows a simplified flowchart of V-Ramp test.
Figure 1-1 Simplified Flow Diagram of V-Ramp Test
Agilent 4155C/4156C Sample Application Programs Guide Book, Edition 1 1-3
V-RAMP
Theory of V-Ramp Test Procedure
The V-Ramp test consists of three tests: initial test, ramp stress test, and post stress test.
In the initial test, normal operating voltage is applied to the oxide capacitor, then leakage
current through the capacitor is measured to check for initial failure.
In the ramp stress test, linear ramped voltage is applied to the capacitor, and the current is
measured.
The post stress test is for confirming that failure occurred during the ramp stress test. The
normal operating voltage is applied to the oxide capacitor again, and leakage current is
measured under the same conditions as the initial test.
After the tests, the test results must be analyzed and saved (data recording).
Before performing the V-Ramp test, test conditions must satisfy the following:
• Gate bias polarity is in accumulated direction. That is, negative (minus) voltage is
applied to gate conductor for P-type bulk, and positive (plus) voltage is applied for
N-type bulk.
• Diffusions and wells (if any) must be connected to substrate.
• Temperature is in 25 ± 5 °C range.
Initial Test
Initial test is to confirm that the oxide capacitor is initially good. If leakage current of that
capacitor exceeds 1 mA, it is categorized as initial failure.
For example, when you test a TTL-level oxide capacitor, constant voltage of -5 V is
applied to that capacitor, and leakage current is measured. If the leakage current is more
than 1 mA, that capacitor is an initial failure.
Post Stress Test
The post stress test checks the oxide status after the ramp stress test. If the oxide is broken,
proper ramp stress was applied to the oxide capacitor. If not, maybe the ramp stress was not
applied correctly.
To check the oxide status, the normal operating voltage is applied to the oxide capacitor
(same as initial test), then leakage current is measured. The leakage current (I
indicates the following:
• If I
• If I
> 1 mA:
leak
The oxide was broken by the applied ramped voltage.
< 1 mA:
leak
The oxide was not broken by the applied ramped voltage.
If the applied ramped voltage reached the maximum electric field, the testing was
probably faulty: for example, the ramped voltage was not applied to the oxide due to an
open circuit.
leak
) value
For example, if you test a TTL level oxide capacitor, constant voltage of -5 V is applied to
that capacitor, then leakage current is measured. If the leakage current is more than 1 mA,
the capacitor was properly broken.
1-4 Agilent 4155C/4156C Sample Application Programs Guide Book, Edition 1
V-RAMP
Theory of V-Ramp Test Procedure
Ramp Stress Test
A linear ramped voltage or a linear stepped voltage, which is approximately ramped
voltage, is applied to the oxide capacitor. While the ramped voltage is forced, the current
through the oxide is measured.
The ramped voltage is stopped when one of the following conditions occurs:
• Current through the oxide exceeds ten times the expected current. The expected current
is calculated from the applied voltage and structure of oxide capacitor. For example, the
expected current density J for a 200 angstrom oxide capacitor is calculated from the
equation for Fowler-Nordheim current as follows:
2 B
æö
JAE
Where, A and B are constants in terms of effective mass and barrier height.E is electric
field.
exp×=
---
–
èø
E
• Current through the oxide exceeds the current compliance determined by the current
density compliance limit of 20 A/cm
2
.
• Electric field generated by the applied voltage exceeds 15 MV/cm. This typically
indicates faulty testing.
Figure 1-2 shows the concept of Vbd and Qbd. In the graph, left vertical axis shows current
through the oxide, right vertical axis shows voltage applied to the oxide capacitor, and
horizontal axis shows time.
When the current through the oxide reaches 10 times the expected current, the ramped
voltage is stopped, and the applied voltage at this point is the breakdown voltage (Vbd).
Breakdown charge (Qbd) is calculated by integrating the current through the oxide:
Tbd
=
Qbd Imeas t() td
ò
Tstart
Figure 1-2 Concept of Breakdown Voltage and Charge
Agilent 4155C/4156C Sample Application Programs Guide Book, Edition 1 1-5
V-RAMP
Theory of V-Ramp Test Procedure
Figure 1-3 shows the two ways to apply the voltage: linear ramped voltage or linear
stepped voltage.
Note that the applied ramped voltage must satisfy the following conditions:
• Ramp rate is in range from 0.1 MV/cm×s to 1.0 MV/cm×s.
• Current measurement interval is 0.1 s or less.
• Ramped voltage starts at normal operating voltage or lower.
• Ramped voltage stops if electric field reaches 15 MV/cm.
If you use the linear stepped voltage, the following conditions must be satisfied also:
• Step value of ramped voltage is 0.1 MV/cm or less.
• Current measurement must be performed at least once for every step.
Figure 1-3 Linear Ramped and Linear Stepped Voltage
1-6 Agilent 4155C/4156C Sample Application Programs Guide Book, Edition 1
Failure Categorization and Data Recording
According to the measurement results, the oxide status is categorized as follows and
recorded:
Initial Failure: Failed the initial test. Indicates initially defective oxide
Catastrophic Failure: Failed ramped and post stress tests. Indicates that oxide
Masked Catastrophic Failure: Did not fail ramped stress test, but failed post stress test.
Non-catastrophic Failure: Failed ramped stress test, but not post stress test.
Other Did not fail ramped stress test or post stress test.
The failure category is recorded for each test device. If the catastrophic failure is observed,
breakdown voltage (Vbd) and breakdown charge density (q
recorded.
Table 1-1 shows the oxide failure categories.
Table 1-1 Oxide Failure Categories
V-RAMP
Theory of V-Ramp Test Procedure
capacitor. Other tests should not be performed.
capacitor was properly broken by the ramped stress test.
= Qbd/Area) are also
bd
Failure Category Initial Test
Ramp Stress
Test
Post Stress Test
Initial Fail n.a. n.a.
Catastrophic
a
Pass Fail Fail
Masked Catastrophic Pass Pass Fail
Non-catastrophic Pass Fail Pass
Other Pass Pass Pass
a. Vbd and qbd are also recorded.
Agilent 4155C/4156C Sample Application Programs Guide Book, Edition 1 1-7
V-RAMP
Basic Operation
Basic Operation
This section covers the following for using an 4155/4156 to perform V-Ramp Test:
required equipment, required files, methodology, how to execute the sample program, and
sample program overview.
Methodology
The entire V-Ramp Test procedure can be performed by executing the VRAMP sample
program on the built-in IBASIC controller of the 4155/4156.
As explained in “Theory of V-Ramp Test Procedure”, the V-Ramp test consists of three
measurement parts and an analysis part. Each measurement part executes three steps as
follows:
1. Loads the measurement setup file into the 4155/4156 execution environment.
2. Changes some of the measurement or analysis parameters on the setup pages.
3. Executes the measurement.
The VRAMP program executes the above three steps for each test: initial test, ramp stress
test, and post stress test. Using the measurement setups (step 1 above) loaded from a file
reduces the length and complexity of the program. For details, see Programmer's Guide.
Measurement setups, which are loaded into the 4155/4156 execution environment, were
previously developed and saved to measurement setup files on the diskette. You can easily
modify the measurement setup information in fill-in-the-blank manner in the 4155/4156
execution environment. The VRAMP sample program is also saved to the diskette. You
can easily modify the sample program by using the editor in the built-in IBASIC
environment.
The VRAMP sample program assumes that the built-in IBASIC controller of the
4155/4156 is used, but you can also use another controller, such as HP BASIC running on
an external computer. To do so, you must modify the sample program for your
environment. See “Customization” on how to modify the program to run on an external
controller.
Initial Test
The initial test makes sure the oxide capacitor is initially good by applying the normal
operating voltage (Vuse), then measuring the leakage current (I
I
exceeds 1 mA, the oxide capacitor is categorized as "initial failure".
leak
The sample program assumes that SMU1 and SMU4 are connected to the oxide capacitor
as shown in Figure 1-4.
) through the oxide. If
leak
1-8 Agilent 4155C/4156C Sample Application Programs Guide Book, Edition 1
V-RAMP
Basic Operation
For the initial test, the sample program does as follows:
1. Sets up the 4155/4156 according to the VRSPOT.MES setup file, which the sample
program previously loaded from the diskette into internal memory MEM1.
2. Sets up SMU1 to constant voltage Vuse for PMOS device, or -Vuse for NMOS
device. Vuse value is specified previously in the sample program, and reset on the
MEASURE: SAMPLING SETUP page by OUTPUT statement (line 2550 of the
sample program).
3. Forces voltage from SMU1, then measures current after the HOLD TIME, which was
setup by VRSPOT.MES setup file described next.
4. Checks if current through the oxide Ig exceeds 1 mA. If so, the sample program aborts
further testing.
The following are main points about the setup by the VRSPOT.MES setup file:
• On CHANNELS: CHANNEL DEFINITION page (see Figure 1-13)
• MEASUREMENT MODE is set to SAMPLING.
• SMU1 and SMU4 are set to be constant voltage sources.
• Ig is defined as name of current measured by SMU1.
• On MEASURE: SAMPLING SETUP page (see Figure 1-5)
• NO. OF SAMPLES is set to 1 to execute the measurement once.
• HOLD TIME is set to 2.00 s to allow the output voltage to stabilize.
• SMU4 is set to force a constant 0 V.
• STOP CONDITION is enabled, NAME is set to Ig, THRESHOLD is set to 1 mA,
and EVENT is set to Val > Th.
So, the measurement will stop if the current through the oxide (Ig) exceeds 1 mA.
If so, the sample program will abort further testing.
Figure 1-4 Simplified Measurement Circuit and Output Voltage of Initial Test
Agilent 4155C/4156C Sample Application Programs Guide Book, Edition 1 1-9
V-RAMP
Basic Operation
Figure 1-5 MEASURE: SAMPLING SETUP Page for Initial Test
Ramp Stress Test
After the initial test, the sample program executes the ramp stress test. Linear stepped
voltage is applied to the oxide.
The measurement setup for the ramp stress test is stored in the VRSWEP.MES setup file on
the diskette. At the beginning of the sample program, this setup is loaded into internal
memory (MEM2). Then, at the beginning of the ramp stress test, the sample program loads
this setup into the 4155/4156.
To force proper stepped voltage, the sample program and VRSWEP.MES set the following:
• SMU channel definition (see Figure 1-6):
SMU4 is set to force a constant 0 V, and SMU1 is set to voltage sweep mode.
• Constant step interval time (see Figure 1-8):
Step interval time of output sweep voltage must be constant.
• Measurement stop mode:
If the current through the oxide reaches the specified compliance, the voltage sweep
and measurement stops.
• Auto-analysis and user functions:
After the measurement, the 4155/4156 executes analysis automatically to search for
Vbd, and to calculate Qbd.
1-10 Agilent 4155C/4156C Sample Application Programs Guide Book, Edition 1
SMU Channel Definition.
The sample program assumes the connection between the SMUs and the oxide capacitor as
shown in Figure 1-6. SMU4 is set to force a constant 0 V, and SMU1 is set to voltage
sweep mode by the VRSWEP.MES setup as shown in Figure 1-7.
Figure 1-6 Simplified Measurement Circuit of Ramp Stress Test
V-RAMP
Basic Operation
Figure 1-7 CHANNELS: CHANNEL DEFINITION Page for Ramp Stress Test
Agilent 4155C/4156C Sample Application Programs Guide Book, Edition 1 1-11
V-RAMP
Basic Operation
Constant step interval time.
To keep a constant step interval time for the voltage sweep and measurement, triggering
and measurement ranging techniques are used. VRSWEP.MES sets the measurement
ranging mode to FIXED, so the time between measurements does not vary due to range
changing.
VRSWEP.MES enables the TRIG OUT function, and the sample program calculates and
sets values so that the step interval time becomes constant as shown in Figure 1-8. The step
interval time (Step_time) is the delay time (Step_delay_t) plus step delay time
(Step_keep_t). Strictly speaking, the sample program calculates these as follows:
Step_time=Vstep/(Ramp_rate*Tox)-1.2ms+0.1ms
Step_delay_t=Step_time/2
Step_keep_t=Step_time-Step_delay_t
Where,
• 1.2 ms is overhead time associated with the delay time for voltage sweep measurement,
when the WAIT TIME field is set to 0 (zero). So, do not set another value in this field.
• 0.1 ms is overhead time associated with the TRIG OUT function.
• Ramp rate (Ramp_rate), oxide thickness (Tox), and step voltage (Vstep) are
specified in lines 1800 to 1840 of the sample program.
The start voltage (Vstart), stop voltage (Vstop), and step voltage (Vstep) are
specified in sample program in lines 1830 to 1850. For NMOS devices, the ramp stress test
subprogram actually sets the opposite polarity for these values by using the Tp variable.
Measurement stop mode.
NOTE The JEDEC standard says that the ramp stress test should abort when the current through
the oxide reaches 10 times the expected current (Iexpect). But this sample program
aborts when the current reaches current compliance (Igcomp). The Iexpect and
Igcomp values are specified in lines 1860 and 1870 of the sample program, and must
meet the following condition: Igcomp ³ Iexpect ´ 10.
VRSWEP.MES file sets the sweep stop condition to SWEEP STOP AT COMPLIANCE as
shown in the Figure 1-10.
Figure 1-8 Output Sweep Voltage for Ramp Stress Test
1-12 Agilent 4155C/4156C Sample Application Programs Guide Book, Edition 1
V-RAMP
Basic Operation
Figure 1-9 MEASURE: MEASURE SETUP and OUTPUT SEQUENCE Pages for Ramp Stress
Test
Figure 1-10 MEASURE: SWEEP SETUP Page for Ramp Stress Test
Agilent 4155C/4156C Sample Application Programs Guide Book, Edition 1 1-13
V-RAMP
Basic Operation
Auto-analysis and user functions.
The sample program does the following:
1. Sets up the maximum and minimum values for graph axes: X, Y1, and Y2. Lines 2940
to 2980.
2. Performs the measurement. Line 3020.
3. Moves marker to maximum Ig, and saves value to Igmax. Lines 3100 to 3170.
4. Moves marker to position where Ig = Iexpect*10. Line 3200.
5. If compliance was reached or if Igmax ³ Iexpect*10, the sample program reads
the value of Vbd and Qbd at present marker position. Lines 3250 to 3320. Where Vdb
and Qbd are specified as described below.
The VRSWEP.MES setup file defines user functions on the CHANNELS: USER
FUNCTION DEFINITION page (see Figure 1-20) as follows:
Table 1-2 User Functions for Ramp Stress Test
Name Units Definition
Time (sec)
@INDEX * 1
a
Vbd (V) @MY2
Qbd (Q) INTEG(Ig,Time)
a. This is a temporary value. Value of Time is redefined by line 2810 of the
sample program.
The above user function calculates Qbd as follows:
Tbd
Qbd Imeas t() td
==
ò
Tstart
N
1
-- - Imeas
å
2
i 2=
Imeas
+()TiT
i
i 1–
–()´
i 1–
Where, N is step number when the breakdown occurs.
1-14 Agilent 4155C/4156C Sample Application Programs Guide Book, Edition 1
Post Stress Test
Post stress test checks the oxide status after the ramp stress test.
The methodology of the post stress test is the same as for initial test. The normal operating
voltage (Vuse) is applied to the oxide, then the leakage current (I
For the measurement circuit, connections, and measurement setups, see “Initial Test”.
Failure Categorization
Table 1-3 shows the oxide failure categories that are determined by the sample program.
The failure category is displayed for each device, and Vbd, Qbd, and qbd are also
displayed.
The measured data and measurement settings are saved in a file.
Table 1-3 Oxide Failure Categories
Basic Operation
) is measured.
leak
V-RAMP
Category Initial Test Ramp Stress Test
Initial I
Catastrophic I
> 1 mA n.a. n.a.
meas
£ 1 mAI
meas
meas
³ I
expect
I compliance reached.
Masked Catastrophic I
£ 1 mAI
meas
meas
< I
expect
I compliance not reached.
Non-catastrophic I
£ 1 mAI
meas
meas
³ I
expect
I compliance reached.
Other I
£ 1 mAI
meas
meas
< I
expect
I compliance not reached.
´ 10, or
´ 10, and
´ 10, or
´ 10, and
Post Stress
Test
I
> 1 mA
meas
I
> 1 mA
meas
I
£ 1 mA
meas
I
£ 1 mA
meas
Agilent 4155C/4156C Sample Application Programs Guide Book, Edition 1 1-15
V-RAMP
Basic Operation
Required Equipment
The following equipment is required to use the V-Ramp sample program:
• Agilent 4155 or Agilent 4156 Semiconductor Parameter Analyzer
• Two triaxial cables
• Probe station
• This operation manual
• Diskette that contains sample program file and two setup files
Files on the Diskette
The following files are stored in the sample diskette:
VRAMP V-Ramp sample program. This is an IBASIC program file saved in
ASCII format.
VRSPOT.MES Measurement setup file for initial and post stress test.
VRSWEP.MES Measurement setup file for ramp stress test.
1-16 Agilent 4155C/4156C Sample Application Programs Guide Book, Edition 1
V-RAMP
V
Basic Operation
Executing the VRAMP Program
Before executing the program, you may need to customize the program to suit your test
device. See “Customization”.
To execute the sample program, use the following procedure:
1. Connect your 4155/4156 to your test device. See Figure 1-4.
2. Turn on your 4155/4156.
3. Insert the diskette containing the VRAMP program into the built-in 3.5 inch flexible
disk drive.
4. Press
Display key in the IBASIC area of the front panel until All IBASIC screen is
displayed.
5. Load the VRAMP program. Type: GET "VRAMP" and press
6. Press
RUN key in the IBASIC area of the front panel to start the program.
Measurement results similar to Figure 1-11 will be displayed on the GRAPHICS page of
the 4155/4156.
Figure 1-11 An Example of Measurement Results
GRAPH/ LI ST: GRAPHI CS SHORT 9 4OCT 23 1 0: 5 3A M
ol t ag e Ramp Sweep Meas ur emen t
MARKER( 28. 1250 000 sec - 50. 0048mA - 27. 450 V )
( A) Qbd - 13. 059987500mQ ( V)
-1.00 -40. 0
Ig Vg
decade ------
/div /div
Vbd - 27. 4 50000000 V
Enter key.
Vs ub
0. 00 V
100. mA
VSU1
0. 00 V
o
VSU2
0. 00 V
*
- 1. 00p -5. 00
0. 00 Ti me ( sec) 5. 00 / di v 43. *
STATUS:008000(8------- -)
AXI S
Y1
MA R K E R/
CURSOR
L I NE SCAL I NG DI SPL AY
SETUP
SWEEP
SETUP
TI MI NG
SET UP
B
CONST
SETUP
Note that this example is obtained when the maximum electric field is set to 50 MV/cm.
Agilent 4155C/4156C Sample Application Programs Guide Book, Edition 1 1-17
V-RAMP
Basic Operation
Flowchart of Sample VRAMP Program
Figure 1-12 shows flowchart of sample VRAMP program and corresponding subprogram
names.
Figure 1-12 Flowchart of Sample VRAMP Program
1-18 Agilent 4155C/4156C Sample Application Programs Guide Book, Edition 1
V-RAMP
Basic Operation
The following provides a brief description for each subprogram.
Test_setting Specifies and checks the parameter values. These are values that the
program will set directly instead of some of the setup file values.
Get_file Loads measurement setup files from the diskette into internal memory:
spot measurement setup into MEM1, and sweep measurement setup
into MEM2. Having the measurement setups in internal memory
reduces the measurement time.
Init_fin_test Executes the spot measurement for initial test or for post stress test.
First parameter specifies the test: Init is for initial test, and Fin is
for post stress test. The measurement results are returned to the second
parameter.
Judge Categorizes failure according to measurement results of initial, ramped
stress, and post stress tests. If the failure is initial failure, this
subprogram aborts the program.
Sweep_test Executes sweep measurement for ramped stress test, then returns the
result flag, Vbd, and Qbd to the three parameters. The measurement
result data is temporarily stored in internal memory (MEM3).
Save_data Saves measurement result data (that is in MEM3) to a file on the
diskette.
Agilent 4155C/4156C Sample Application Programs Guide Book, Edition 1 1-19
V-RAMP
Customization
Customization
This section describes how to customize the sample program to suit your test device.
Using an External Computer
This sample program (VRAMP) is assumed to run on the Instrument BASIC that is built
into the 4155/4156. The 4155/4156 is used as both the measurement instrument and the
controller running IBASIC, so VRAMP sets device selector 800. On the following three
lines, the 4155/4156 is assigned and interrupt from it is enabled as follows:
1470 ASSIGN @Hp4155 TO 800
:
1540 ON INTR 8 CALL Err_check
1550 ENABLE INTR 8;2
If you use an external controller (that can run HP BASIC environment) to control the
4155/4156, you need to modify a few lines of the sample program. For example, if you use
HP BASIC/WS on an HP 9000 Series 300 computer, you only need to modify lines the
above three lines as follows:
In this case, the 4155/4156 has GPIB address 17 and is not used as the system controller,
and is connected to the built-in GPIB of the HP 9000 series 300 controller with an GPIB
cable. Use the following procedure to set the GPIB address and system mode:
1. Turn on your 4155/4156.
2. Press
3. Select MISCELLANEOUS softkey.
4. Move the field pointer to the "415x is " field, then select the NOT CONTROLLER
5. Move the field pointer to the "415x" field in the GPIB ADDRESS area, then enter: 17.
1-20 Agilent 4155C/4156C Sample Application Programs Guide Book, Edition 1
System key.
softkey.
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