Tips, Tools and Techniques that
Simplify I-V and C-V Characterization
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TOOLS, TIPS, AND TECHNIQUES THAT SIMPLIF Y I-V AND C-V CHARACTERIZ ATION
Tools, Tips, and Techniques that Simplify I-V and C-V Characterization
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Introduction
Semiconductor characterization presents a wide range of test challenges. This e-Guide offers
an overview of advanced tools, tips, and techniques that you can use to simplify the I-V and C-V
measurements that are essential to characterizing emerging semiconductor materials, devices,
and processes.
Table of Contents
Making Accurate I-V and C-V Measurements ............................................................................................... 3
Ensuring C-V Measurement Integrity ....................................................................................................... 4-5
Preventing C-V Measurement Errors While Reducing Test Times .................................................................. 6
New C-V Measurement Techniques for High Impedance Devices ................................................................. 7
Measuring Sub-Picoamp Currents Accurately .............................................................................................. 8
Combining I-V, C-V, and Pulse I-V Measurements in One System ................................................................. 9
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TOOLS, TIPS, AND TECHNIQUES THAT SIMPLIF Y I-V AND C-V CHARACTERIZ ATION
Making Accurate I-V and C-V Measurements for Semiconductor Research,
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Design, Development, and Test
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I-V Measurements
Making low current measurements presents a variety of measurement challenges. Error sources such
as leakage currents, noise, offset currents, piezoelectric currents, and environmental conditions can
have a serious impact on measurement accuracy. Precision DC I-V measurements are the foundation
of electrical characterization for cutting-edge devices, materials, and semiconductors. With proper
measurement techniques and practices, these critical measurement challenges can be met.
Ultra-Fast Pulsed I-V Measurements
Today, many parametric measurements require a fast, pulsed I-V measurement. Using pulsed I-V
signals to characterize devices rather than DC signals makes it possible to study or reduce the
effects of self-heating (joule heating) or to minimize current drift/degradation in measurements. Many
applications require pulsed I-V along with C-V and DC I-V measurements. Learn how to combine all
three measurement types into one test system while maintaining the measurement performance.
Capacitance-Voltage (C-V) Measurements
Capacitance measurements have been used to determine a variety of semiconductor parameters
on many different devices and structures. Three measurement techniques are used to derive critical
parameters from a wide range of new materials, processes, devices. Multi-frequency capacitance
provides capacitance vs. voltage (C-V), capacitance vs. frequency (C-f), and capacitance vs. time
(C-t) measurements to evaluate at frequencies ranging from 10-MHz down to 1-kHz. Sometimes
even lower frequency capacitance measurements are necessary to evaluate test parameters of thin
film transistors, MEMS structures, and other high impedance devices. Called very low frequency
(VLF) C-V, this newer technique performs C-V measurements in the range of 10-mHz to 10-Hz.
To characterize slow trapping and de-trapping phenomenon in some materials, a capacitance
measurement technique called quasistatic (or almost DC) measurements can be used.
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Testing, Pulsed I-V Testing, and C-V Testing.
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TOOLS, TIPS, AND TECHNIQUES THAT SIMPLIF Y I-V AND C-V CHARACTERIZ ATION
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