IXYS IXFH16N90, XFX16N90 Service Manual
查询IXFH16N90供应商
HiPerFET
TM
Power MOSFETs
IXFH16N90 V
IXFX16N90 I
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
Preliminary data
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
M
d
T
= 25°C to 150°C 900 V
J
T
= 25°C to 150°C; RGS = 1 MΩ 900 V
J
Continuous ±20 V
Transient ±30 V
T
= 25°C16A
C
T
= 25°C, pulse width limited by T
C
T
= 25°C16A
C
T
= 25°C45mJ
C
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
T
≤ 150°C, RG = 2 Ω
J
T
= 25°C 360 W
C
JM
, 5 V/ns
DSS
64 A
-55 ... +150 °C
150 °C
-55 ... +150 °C
1.6 mm (0.062 in.) from case for 10 s 300 °C
Mounting torque 1.13/10 Nm/lb.in.
Weight 6 g
TO-247 AD
(IXFH)
PLUS 247
(IXFX)
Features
l
International standard packages
l
Low R
l
Rugged polysilicon gate cell structure
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
l
Fast intrinsic Rectifier
DSS
D25
R
DS(on)
£ 200 ns
t
rr
TM
G
D
HDMOSTM process
DS (on)
= 900 V
=16 A
= 0.65 W
(TAB)
C (TAB)
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
© 1998 IXYS All rights reserved
VGS= 0 V, I
= 250µA 900 V
D
VDS= VGS, ID = 5 mA 2.0 4.5 V
V
= ±20 V
GS
VDS= 0.8 V
VGS= 0 V T
DC
DSS
VGS= 10 V, ID = 0.5 I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
J
, V
= 0 ±100 nA
DS
T
=25°C25µA
J
= 125°C 250 µA
J
D25
min. typ. max.
0.65 Ω
Applications
l
DC-DC converters
l
Battery chargers
l
Switched-mode and resonant-mode
power supplies
l
DC choppers
l
AC motor control
l
Temperature and lighting controls
Advantages
l
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole) or
mounting clip or spring (PLUS 247TM)
l
Space savings
l
High power density
97547(2/98)
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
J
min. typ. max.
IXFH 16N90
IXFX 16N90
TO-247 AD (IXFH) Outline
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
VDS= 10 V; ID = 0.5 I
, pulse test 6 10 S
D25
4500 pF
VGS= 0 V, VDS = 25 V, f = 1 MHz 430 pF
150 pF
27 ns
VGS= 10 V, VDS = 0.5 V
R
= 2 Ω (External), 120 n s
G
, ID = 0.5 I
DSS
D25
30 ns
30 ns
220 nC
VGS= 10 V, VDS = 0.5 V
, ID = 0.5 I
DSS
D25
30 nC
85 nC
0.25 K/W
0.35 K/W
Source-Drain Diode Characteristic Values
(T
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
I
SM
V
SD
VGS= 0 V 16 A
Repetitive; 64 A
pulse width limited by T
IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
J
JM
1 2 3
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
2.2 2.54 .087 .102
1
A
2.2 2.6 .059 .098
2
b 1.0 1.4 .040 .055
b
1.65 2.13 .065 .084
1
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
PLUS 247TM Outline
t
rr
Q
RM
I
RM
I
= I
F
S
-di/dt = 100 A/µs,
VR = 100 V
T
=25°C 200 ns
J
T
= 125°C 350 ns
J
T
=25°C1µC
J
T
= 125°C2µC
J
T
=25°C10A
J
T
= 125°C15A
J
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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