Datasheet XL0840 Datasheet (ST)

®

XL0840

SENSITIVE GATE 0.8A SCRs

MAIN FEATURES

Symbol Value Unit

I

T(RMS)

V

DRM

I

GT

0.8 A
400 V
200 µA

DESCRIPTION

Thanks to its highly sensitive triggering levels, the
XL0840 device is suitable for all high volumes appli­cations where the available gate current is limited,
such as Christmas lights control.

ABSOLUTE RATINGS (limiting values)

A

G

K

K

G

A

TO-92

Symbol Parameter Value Unit

I

T(RMS)

I

T(AV)

I

TSM

2

tI

I

dI/dt Critical rate of rise of on-state current

I

GM

P

G(AV)

T

stg

T

j

January 2002 - Ed: 1A

RMS on-state current (180° conduction angle) TI = 55°C 0.8 A
Average on-state current (180° conduction angle) TI = 55°C 0.5 A
Non repetitive surge peak on-state

current

2

t Value for fusing tp = 10 ms Tj = 25°C 0.24 A2s

tp = 8.3 ms

Tj = 25°C

tp=10ms 7

8A

F = 60 Hz Tj = 125°C 30 A/µs

=2xIGT,tr≤100ns

I

G

Peak gate current tp = 20µs Tj = 125°C 1 A
Average gate power dissipation Tj = 125°C 0.1 W
Storage junction temperature range

Operating junction temperature range

-40to+150

-40to+125

°C

1/5

XL0840

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)

Symbol Test Conditions XL0840 Unit

I

GT

V

GT

V

GD

V

RG

I

H

I

L

dV/dt V

V

TM

V

TO

VD=12V RL=140Ω MAX. 200 µA

MAX. 0.8 V

VD=V

DRMRL

=3.3kΩ RGK=1kΩ Tj = 125°C MIN. 0.1 V
IRG= 10µA MIN. 8 V
IT= 50mA RGK=1kΩ MAX. 5 mA

IG= 1mA RGK=1kΩ MAX. 6 mA

=67% V

D

DRMRGK

=1kΩ Tj= 125°C MIN. 75 V/µs
ITM= 1.6A tp = 380µs Tj = 25°C MAX. 1.95 V
Threshold voltage Tj = 125°C MAX. 1.0 V

Rd Dynamic resistance Tj = 125°C MAX. 600 mΩ

I

DRM

V

DRMRGK

=1kΩ Tj = 25°C MAX. 1 µA

Tj = 125°C 100

THERMAL RESISTANCES

Symbol Parameter Value Unit

Rth(j-a) Junction to ambient (DC) 150 °C/W

Rth(j-l) Junction to lead (DC) 80 °C/W

PRODUCT SELECTOR

Part Number Voltage Sensitivity Package

XL0840 400V 200 µA TO-92

ORDERING INFORMATION

X L 08 40

SENSITIVE SCR

LIGHT CONTROL

CURRENT:0.8A

OTHER INFORMATION

Part Number Marking Weight Base quantity Packing mode

VOLTAGE:
40: 400V

XL0840 XL0840 0.2 g 2500 Bulk

2/5

XL0840

Fig. 1: Maximum average power dissipation ver-

sus average on-state current.

P(W)

1.0

α=180°

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50

IT(av)(A)

180°

α

α

Fig. 2-2: Average and D.C. on-state current ver­sus ambient temperature (device mounted on FR4
with recommended pad layout).

IT(av)(A)

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0
0 25 50 75 100 125

D.C.

α=180°

Tamb(°C)

Fig. 2-1: Average and D.C. on-state current ver-

sus lead temperature.

IT(av)(A)

0.9

D.C.

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

α=180°

Tlead(°C)

0 25 50 75 100 125

Fig. 3: Relative variation of thermal impedance

junction to ambient versus pulse duration.

K=[Zth(j-a)/Rth(j-a)]

1.E+00

1.E-01

tp(s)

1.E-02

1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

Fig. 4: Relative variation of gate trigger current,

holding current and latching current versus junc­tion temperature (typical values).

IGT,IH,IL[Tj] / IGT, IH, IL [Tj=25°C]

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130

IH & IL

(Rgk=1kW)

IGT

Tj(°C)

Fig. 5:Relativevariationofholding current versus

gate-cathode resistance (typical values).

IH [Rgk] / IH [Rgk=1k ]Ω

11
10

9
8
7
6
5
4
3
2
1
0

0.01 0.10 1.00 10.00

Rgk(k )Ω

Tj=25°C

3/5

XL0840

Fig. 6: Relative variation of dV/dt immunity versus

gate-cathode resistance (typical values).

dV/dt [Rgk] / dV/dt [Rgk=1k ]Ω

5

4

3

2

1

Tj=125°C
VD=270V

Rgk(k )Ω

0

0.10 1.00 10.00

Fig. 8: Surge peak on-statecurrent versus number

of cycles.

ITSM(A)

8

7

Repetitive

Tlead=50°C

Non repetitive
Tj initial=25°C

Number of cycles

6

5

4

3

2

1

0

1 10 100 1000

tp=10ms

Fig. 7: Relative variation of dV/dt immunity versus
gate-cathode capacitance (typical values).

dV/dt [Cgk] / dV/dt [Rgk=1k ]Ω

10

9
8
7
6
5
4
3
2
1
0

1.00 10.00

Cgk(nF)

Tj=125°C
VD=270V
Rgk=1kW

Fig. 9: Non repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and cor­responding value of I

ITSM(A), I t (A s)

100.0

10.0

1.0

0.1

0.01 0.10 1.00 10.00

22

2

t.

ITSM

tp(ms)

Tj initial=25°C

I²t

Fig. 10: On-state characteristics (maximum val­ues).

ITM(A)

10.00

1.00

Tj=125°C

0.10

0.01
0123456

4/5

Tj=25°C

VTM(V)

Tj max.:

Vto = 1.00 V

Rd = 600 mΩ

PACKAGE MECHANICAL DATA

TO-92

XL0840

DIMENSIONS

BAC

REF.

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

a

A 1.35 0.053
B 4.70 0.185
C 2.54 0.100
D 4.40 0.173

F

D

E

E 12.70 0.500

F 3.70 0.146
a 0.50 0.019

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change without notice. This publication supersedes and replaces all information previously supplied.
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