Datasheet IRF1312, IRF1312S, IRF1312L Datasheet (IOR)

查询IRF1312供应商

PD- 94504

IRF1312

IRF1312S

IRF1312L

HEXFET® Power MOSFET

Applications

l High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies

V

DSS

R

DS(on)

max I

80V 10mΩ 95A

Benefits

l Low Gate-to-Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C App. Note AN1001)

l Fully Characterized Avalanche Voltage

to Simplify Design, (See

OSS

TO-220AB

IRF1312

D2Pak

IRF1312S

TO-262

IRF1312L

and Current

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 95 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 67 A I

DM

PD @TA = 25°C Power Dissipation  3.8 W PD @TC = 25°C Power Dissipation 210

V

GS

dv/dt Peak Diode Recovery dv/dt  5.1 V/ns T

J

T

STG

Pulsed Drain Current  380

Linear Derating Factor 1.4 W/°C Gate-to-Source Voltage ± 20 V

Operating Junction and -55 to + 175 Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)

D

°C

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θCS

R

θJA

R

θJA

Notes  through  are on page 11

Junction-to-Case ––– 0.73 Case-to-Sink, Flat, Greased Surface  0.50 ––– °C/W Junction-to-Ambient ––– 62 Junction-to-Ambient (PCB mount) ––– 40

www.irf.com 1

7/01/02

IRF1312/S/L

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

I

DSS

I

GSS

Dynamic @ TJ = 25°C (unless otherwise specified)

g

fs

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

C

oss

C

oss

C

eff. Effective Output Capacitance ––– 620 ––– VGS = 0V, VDS = 0V to 64V 

oss

Drain-to-Source Breakdown Voltage 80 ––– ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient

J

––– 0.078 ––– V/°C Reference to 25°C, ID = 1mA Static Drain-to-Source On-Resistance ––– 6.6 10 mΩ VGS = 10V, ID = 57A  Gate Threshold Voltage 3. 5 ––– 5.5 V VDS = VGS, ID = 250µA

Drain-to-Source Leakage Current

––– ––– 1.0

––– ––– 250 VDS = 64V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100

VDS = 76V, VGS = 0V

µA

nA

V

= -20V

GS

Parameter Min. Typ. Max. Units Conditions Forward Transconductance 92 ––– ––– S VDS = 25V, ID = 57A Total Gate Charge ––– 93 140 ID = 57A Gate-to-Source Charge ––– 36 ––– nC VDS = 40V Gate-to-Drain ("Miller") Charge ––– 34 ––– VGS = 10V,  Turn-On Delay Time ––– 25 ––– VDD = 40V Rise Time ––– 130 ––– ID = 57A Turn-Off Delay Time ––– 47 ––– RG = 4.5Ω

ns

Fall Time ––– 51 ––– VGS = 10V  Input Capacitance ––– 5450 ––– VGS = 0V Output Capacitance ––– 550 ––– VDS = 25V Reverse Transfer Capacitance ––– 340 ––– pF ƒ = 1.0MHz Output Capacitance ––– 1910 –– – VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Output Capacitance ––– 380 ––– VGS = 0V, VDS = 64V, ƒ = 1.0MHz

Avalanche Characteristics

Parameter Typ. Max. Units

E

AS

I

AR

E

AR

Single Pulse Avalanche Energy ––– 250 mJ Avalanche Current ––– 57 A Repetitive Avalanche Energy ––– 21 mJ

Diode Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Continuous Source Current MOSFET symbol (Body Diode) Pulsed Source Current integral reverse (Body Diode) 

––– –––

95

380

showing the

A

p-n junction diode.

G

Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 57A, VGS = 0V  Reverse Recovery Time ––– 64 96 ns TJ = 25°C, IF = 57A Reverse RecoveryCharge ––– 150 230 nC di/dt = 100A/µs



Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

2 www.irf.com

D

S

IRF1312/S/L

1000

)

100

A

(

t

n

e

r

u C

10

e

c

r

u

o

S

-

1

o

t

-

n

i

a

r D

,

0.1

D

I

0.01

0.1 1 10 100

VGS TOP 15V 12V 10V

8.0V

7.0V

6.0V

5.5V B OTT OM 5. 0V

20µs PULSE W IDTH

5.0V

Tj = 25°C

VDS, Drain-to-Source Voltage (V)

1000.00

) A

(

t

n

e

r

u C e

c

r

u

o S

-

o

t

-

n

i

a

r D

,

D

I

100.00

10.00

1.00

0.10

0.01

TJ = 175°C

TJ = 25°C

V

= 25V

DS

20µs PULSE WIDTH

5 6 7 8 9 10

VGS, Gate-to-Source Voltage (V)

1000

) A

(

t

n

e

r

100

u C e

c

r

u

o S

-

o

t

-

10

n

i

a

r D

,

D

I

VGS TOP 15V 12V 10V

8.0V

7.0V

6.0V

5.5V B OTT OM 5. 0V

5.0V 20µs PULSE WIDTH

Tj = 25°C

1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.5

e

c

n

a

t

s

i

s

e R n O e

)

c

d

r

e

u

z

i

o

l

S

a

-

m

o

t

r

-

o

n

i

N

(

a

r D

,

)

n

o

( S D

R

ID = 95A V

= 10V

GS

2.0

1.5

1.0

0.5

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (° C)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

www.irf.com 3

IRF1312/S/L

100000

) F

10000

p

( e

c

n

a

t

i

c

a

p

a C

1000

, C

100

1 10 100

V

= 0V, f = 1 MHZ

GS

C

= C

iss

SHORTED C

= C

rss

C

= C

oss

Ciss

Coss Crss

VDS, Drain-to-Source V oltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000.0

) A

(

t

n

e

r

u C n

i

a

r D e

s

r

e

v

e R

,

D S

I

100.0

10.0

TJ = 175°C

1.0

TJ = 25°C

0.1

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VSD, Source-toDrain Voltage (V)

gd

ds

+ Cgd, C

gs

+ C

gd

20

ds

ID= 57A

) V

(

16

e

g

a

t

l

o V

12

e

c

r

u

o S

-

o

8

t

-

e

t

a G

,

S

4

G

V

0

0 40 80 120 160 200

VDS= 64V VDS= 40V

VDS= 16V

Q

Total Gate Charge (nC)

G

F O R TES T CIRCUI T SEE FI GURE 13

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

10000

) A

1000

(

t

n

e

r

u C

100

e

c

r

u

o S

-

10

o

t

-

n

i

a

r D ,

1

D

I

V

= 0V

GS

Tc = 25°C Tj = 175°C Single Puls e

0.1 1 10 100 1000

OPERATION IN THIS AREA LIMITED BY RDS(on)

V

, Drain-toSource Voltage (V)

DS

100µsec

1msec

10msec

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

4 www.irf.com

IRF1312/S/L

+

-

100

LIMITED BY PACKAGE

80

) A

(

t

n

60

e

r

u C n

i

a

40

r D

,

D

I

20

0

25 50 75 100 125 150 175

TC , Case Temper ature (°C)

Fig 9. Maximum Drain Current Vs.

Case Temperature

1

R

V

DS

V

GS

R

G

V

GS

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

D

D.U.T.

Fig 10a. Switching Time Test Circuit

V

DS

90%

10% V

GS

t

d(on)tr

t

d(off)tf

Fig 10b. Switching Time Waveforms

V

DD

D = 0.50

thJC

0.20

0.1

0.10

P

1 2

DM

t

1

t

2

0.05

0.02

Thermal Response (Z )

0.01

0.00001 0.0001 0.001 0.01 0.1

SINGLE PULSE

(THERMAL RESPONSE)

t , Rectangular Pulse Duration (sec)

1

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

J DM thJC C

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRF1312/S/L

A

15V

DRIVER

+

V

DD

-

R

V

20V

V

DS

G

GS

L

D.U.T

I

AS

Ω

0.01

t

p

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

I

AS

Fig 12b. Unclamped Inductive Waveforms

500

TOP

400

300

200

100

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150 175

Starting TJ, Junction Temperature (°C)

BOTTOM

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Current Regulator

Same Type as D.U.T.

I

D

23A 40A 57A

50KΩ

Q

G

V

GS

Q

GS

V

G

Q

GD

Charge

Fig 13a. Basic Gate Charge Waveform

12V

Fig 13b. Gate Charge Test Circuit

.2µF

V

GS

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

I

+

V

-

D

6 www.irf.com

DS

IRF1312/S/L

+

-

Peak Diode Recovery dv/dt Test Circuit

D.U.T*

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

-

+



-



-

+



R

G

V

GS

• dv/dt controlled by R

• I

controlled by Duty Factor "D"

SD

• D.U.T. - Device Under Test

G

V

DD

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.

Period

D =

P.W.

Period

VGS=10V

[ ] ***

D.U.T. ISDWaveform

Reverse Recovery Current

Re-Applied Voltage

D.U.T. VDSWaveform

Inductor Curent

*** V

= 5.0V for Logic Level and 3V Drive Devices

GS

Fig 14. For N-channel HEXFET

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

®

power MOSFETs

V

DD

[ ]

I

[ ]

SD

www.irf.com 7

IRF1312/S/L

E

X

A

M

P

L

E

:

T

H

I

S

I

S

A

N

I

R

F

1

0

1

0

L

O

T

C

O

D

E

1

7

8

9

A

S

E

M

B

L

E

D

O

N

W

1

9

,

1

9

7

I

N

T

H

E

A

S

E

M

B

L

Y

L

I

N

E

"

C

"

I

N

T

E

R

N

A

T

I

O

N

A

L

R

E

C

T

I

F

I

E

R

L

O

G

O

A

S

E

M

B

L

Y

L

O

T

C

O

D

E

P

A

R

T

N

U

M

B

E

R

D

A

T

E

C

O

D

E

Y

E

A

R

7

=

1

9

7

W

E

K

1

9

L

I

N

E

C

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

10.54 (.415)

2.87 (.113)

2.62 (.103)

15.24 (.600)

14.84 (.584)

14.09 (.555)

13.47 (.530)

1.40 (.055)

3X

1.15 (.045)

2.54 (.100)

NOTES: 1 DIM ENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTL INE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

2X

10.29 (.405)

4

1 2 3

3X

0.36 (.014) M B A M

6.47 (.255)

6.10 (.240)

1.15 (.045) MIN

4.06 (.160)

3.55 (.140)

0.93 (.037)

0.69 (.027)

3.78 (.149)

3.54 (.139)

- A -

4.69 (.185)

4.20 (.165)

- B -

1.32 (.052)

1.22 (.048)

2.92 (.115)

2.64 (.104)

LEAD AS S IGNM E NT S 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN

0.55 (.022)

3X

0.46 (.018)

TO-220AB Part Marking Information

8 www.irf.com

D2Pak Package Outline

F

5

3

0

S

T

H

I

S

I

S

A

N

I

R

F

5

3

0

S

W

I

T

H

L

O

T

C

O

D

E

8

0

2

4

A

S

E

M

B

L

E

D

O

N

W

0

2

,

2

0

I

N

T

H

E

A

S

E

M

B

L

Y

L

I

N

E

"

L

"

A

S

E

M

B

L

Y

L

O

T

C

O

D

E

I

N

T

E

R

N

A

T

I

O

N

A

L

R

E

C

T

I

F

I

E

R

L

O

G

O

P

A

R

T

N

U

M

B

E

R

D

A

T

E

C

O

D

E

Y

E

A

R

0

=

2

0

W

E

K

0

2

L

I

N

E

L

IRF1312/S/L

D2Pak Part Marking Information

www.irf.com 9

IRF1312/S/L

R

TO-262 Package Outline

IGBT

1- GATE 2- COLLECTOR 3- EMITTER 4- COLLECTOR

TO-262 Part Marking Information

T

H

I

E

A

X

M

10 www.irf.com

S

I

:

S

E

P

L

A

N

C

O

D

T

E

O

L A

S

M

L

B

S

E H

I

N

T

E

A

S

L

3

1

0

3

I

R

L

8

1

7

9

D

O

N

E

S

M

B

E

1

9

,

1

W

L

9

I

N

Y

C

L

E

"

I

N

9

7

T

R

N

I

O

A

R

E

C

A L

L

T

N

A

I

F

I

T

R

E

G

O

L

S

E

S

M

B

Y

L

O

T

C

D

O

E

N

A

U

P

R

B

T

M

E

D

C

D

T

A

O

E

7

9

1

=

7

R

A

Y

E

9

1

E

K

W

E

L

I

N

E

C

D2Pak Tape & Reel Information

TRR

4.10 (.161)

3.90 (.153)

FEED DIRECTION

TRL

FEED DIRECTION

1.85 (.073)

1.65 (.065)

10.90 (.429)

10.70 (.421)

1.60 (.063)

1.50 (.059)

11.60 (.457)

11.40 (.449)

16.10 (.634)

15.90 (.626)

1.60 (.063)

1.50 (.059)

1.75 (.069)

1.25 (.049)

15.42 (.609)

15.22 (.601)

IRF1312/S/L

0.368 (.0145)

0.342 (.0135)

24.30 (.957)

23.90 (.941)

4.72 (.136)

4.52 (.178)

13.5 0 (.532)

12.8 0 (.504)

330.00 (14.173) MAX.

NOTES :

1. COMFORMS TO EIA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HU B.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

27.40 (1.079)

23.90 (.941)

4

26.40 (1.039)

24.40 (.961)

3

60.00 (2.362) MIN.

30. 40 (1.197) MAX.

4

Notes:

 Repetitive rating; pulse width limited by

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

max. junction temperature. ( See fig. 11 )

 C

eff. is a fixed capacitance that gives the same charging time

 Starting T

RG = 25Ω, I

 I

SD

= 25°C, L = 0.15mH

J

= 57A. (See Figure 12)

AS

≤ 57A, di/dt ≤ 410A/µs, V

TJ ≤ 175°C

 This is applied to D

≤ V

DD

2

Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).

(BR)DSS

,

oss

as C

oss

while V

is rising from 0 to 80% V

DS

Calculated continuous current based on maximum allowable

junction temperature. Package limitation current is 75A.

 This is only applied to TO-220AB package

For recommended footprint and soldering techniques refer to application note #AN-994.

TO-220AB package is not recommended for Surface Mount Application

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

DSS

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.7/02

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Datasheet IRF1312, IRF1312S, IRF1312L Datasheet (IOR)

Specifications and Main Features

Frequently Asked Questions

User Manual