Datasheet IRF150 Datasheet (International Rectifier)

PD - 90337G

REPETITIVE A VALANCHE AND dv/dt RA TED IRF150

HEXFETTRANSISTORS
THRU-HOLE (TO-204AA/AE)

[REF:MIL-PRF-19500/543]

100V, N-CHANNEL

JANTX2N6764

JANTXV2N6764

Product Summary

Part Number BVDSS RDS(on) ID

IRF150 100V 0.055Ω 38A

The HEXFETtechnology is the key to International
Rectifier’s adv anced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis­tance combined with high transconductance; superior re­verse energy and diode recovery dv/dt capability .

The HEXFET transistors also feature all of the well estab­lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.

They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.

Features:

n Repetitiv e Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling

TO-3

Absolute Maximum Ratings

Parameter Units

ID @ VGS = 10V, TC = 25°C Continuous Drain Current 38

ID @ VGS = 10V, TC = 100°C Continuous Drain Current 24

I

DM

PD @ TC = 25°C Max. Power Dissipation 150 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt ➂ 5.5

T

J

T

STG

For footnotes refer to the last page

Pulsed Drain Current ➀ 152

Linear Derating Factor 1.2 W/°C
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy ➁ 150 mJ
Avalanche Current ➀ 38 A
Repetitive Av alanche Energy ➀ 15 mJ

Operating Junction -55 to 150
Storage T emperature Range
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
Weight 11.5 (typical) g

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A

V/ns

o

C

08/21/01

IRF150

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter Min Typ Max Units Test Conditions

t

BV
∆BV

R

V
g
I

DSS

I

GSS

I

GSS

Q
Q
Q
t

d(on)

t

r

t

d(off)
f

L

C
C
C

DSS

DSS

DS(on)

GS(th)
fs

g
gs
gd

S + LD

iss
oss
rss

Drain-to-Source Breakdown Voltage 100 — — V VGS = 0V, ID = 1.0mA

/∆TJTemperature Coefficient of Breakdown — 0.13 — V/°C Reference to 25°C, ID = 1.0mA

Voltage
Static Drain-to-Source On-State — — 0.055 VGS = 10V, ID =24A➃
Resistance — — 0.065 VGS =10V, ID =38A ➃
Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID =250µA
Forward Transconductance 9.0 — — S ( ) VDS > 15V, IDS =24A➃
Zero Gate Voltage Drain Current — — 25 VDS=80V, VGS=0V

— — 250 VDS =80V

Gate-to-Source Leakage Forward — — 100 VGS =20V
Gate-to-Source Leakage Reverse — — -100 VGS =-20V
Total Gate Charge 50 — 125 VGS =10V, ID= 38A
Gate-to-Source Charge 8.0 — 22 nC VDS =50V
Gate-to-Drain (‘Miller’) Charge 25 — 65
Turn-On Delay Time — — 35 VDD =50V, ID =38A,
Rise Time — — 1 90 VGS =10V,RG =2.35Ω
Turn-Off Delay Time — — 170
Fall Time — — 130
Total Inductance — 6.1 —

Input Capacitance — 3700 VGS = 0V , VDS =25V
Output Capacitance — 1100 — pF f = 1.0MHz
Reverse Transfer Capacitance — 200 —

Ω

Ω

µA

VGS = 0V, TJ = 125°C

nA

ns

nH

Measured from the center of
drain pad to center of source
pad

Source-Drain Diode Ratings and Characteristics

Parameter Min Typ Max Units Test Conditions

I

Continuous Source Current (Body Diode) — — 38

S

I

Pulse Source Current (Body Diode) ➀ — — 152

SM

V

Diode Forward Voltage — — 1.9 V Tj = 25°C, IS =38A, VGS = 0V ➃

SD

t

Reverse Recovery Time — — 500 nS Tj = 25°C, IF = 38A, di/dt ≤100A/µs

rr

Q

Reverse Recovery Charge — — 2.9 µc VDD ≤ 30V ➃

RR

t

Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L

on

A

S

Thermal Resistance

Parameter Min Typ Max Units Test Conditions

R

thJC

R

thJA

For footnotes refer to the last page

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Junction to Case — — 0.83
Junction to Ambient — — 30 Typical socket mount

°C/W

+ LD.

IRF150

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

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IRF150

13 a& b

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 8. Maximum Safe Operating Area

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Fig 9. Maximum Drain Current Vs.

Case Temperature

IRF150

R

D.U.T.

t

d(off)tf

D

V

DS

V

GS

R

G

V

GS

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

V

DS

90%

10%
V

GS

t

d(on)tr

Fig 10b. Switching Time Waveforms

+

V

DD

-

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRF150

A

15V

DRIVER

+

-

R

V

G

V

20V

GS

DS

L

D.U.T

.

I

AS

0.01

t

p

Ω

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

I

AS

Fig 12b. Unclamped Inductive Waveforms

V

DD

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Current Regulator

Same Type as D.U.T.

50KΩ

Q

G

10 V

Q

GS

V

G

Q

GD

Charge

Fig 13a. Basic Gate Charge Waveform

12V

Fig 13b. Gate Charge Test Circuit

.2µF

V

GS

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

I

+

V

DS

-

D

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Foot Notes:

➂ I

➀ Repetitive Rating; Pulse width limited by

maximum junction temperature.

➁ V

=50V , starting TJ = 25°C,

DD

Peak IL = 38A, V

GS

=10V

≤ 38A, di/dt ≤300A/µs,

SD

VDD≤ 100V , TJ ≤ 150°C
Suggested RG =2.35 Ω

➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

Case Outline and Dimensions —TO-204AE (Modified TO-3)

IRF150

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]

TAC Fax: [phone]

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 08/01

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