Datasheet IRF1205 Datasheet (IOR)

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PD - 93803

PROVISIONAL

IRF1205

HEXFET® Power MOSFET

l Advanced Process Technology
l Dynamic dv/dt Rating
l 175 °C Operating Temprature
l Fast Switching
l Fully Avalanche Rated

G

Description

Fifth Generation MOSFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET® power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.

The TO-220 package is universely preferred for all
commercial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its
wide acceptance throughout the industry.

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 41
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 29 A
I

DM

PD @TC = 25°C Power Dissipation 83 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns
T

J

T

STG

Pulsed Drain Current  164

Linear Derating Factor 0.56 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 190 mJ
Avalanche Current 25 A
Repetitive Avalanche Energy 8.3 m J

Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )

Mounting torque, 6-32 or M3 screw

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θCS

R

θJA

Junction-to-Case ––– 1.8
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62

www.irf.com 1

D

R

S

TO-220AB

V

= 55V

DSS

= 0.027Ω

DS(on)

ID = 41A

°C

11/3/99

IRF1205

PROVISIONAL

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.05 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance ––– ––– 0.027 Ω VGS = 10V, ID = 25A 
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 13 ––– ––– S VDS = 25V, ID = 25A

Drain-to-Source Leakage Current

––– ––– 25

––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100

VDS = 55V, VGS = 0V

µA

nA

VGS = -20V
Total Gate Charge ––– ––– 50 ID = 25A
Gate-to-Source Charge ––– ––– 10 nC VDS = 44V
Gate-to-Drain ("Miller") Charge ––– – –– 21 VGS = 10V 
Turn-On Delay Time ––– 9.9 ––– VDD = 28V
Rise Time ––– 44 ––– ID = 25A
Turn-Off Delay Time ––– 34 ––– RG = 9.1Ω

ns

Fall Time ––– 35 ––– RD = 1.1Ω  
Internal Drain Inductance

Internal Source Inductance ––– –––

––– –––

4.5

7.5

Between lead,

6mm (0.25in.)

nH

from package

and center of die contact
Input Capacitance ––– 1200 ––– VGS = 0V
Output Capacitance ––– 390 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 140 ––– ƒ = 1.0MHz 

D

G

S

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode) 

––– –––

––– –––

41

164

showing the

A

p-n junction diode.

G

Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS =25A, VGS = 0V 
Reverse Recovery Time ––– 63 94 ns TJ = 25°C, IF = 25A
Reverse RecoveryCharge 140 210 nC di/dt = 100A/µs



Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

 Pulse width ≤ 300µs; duty cycle ≤ 2%

max. junction temperature.

 V

25V, Starting TJ = 25°C, L = 610µH

DD=

RG = 25Ω, I

 I

≤25A, di/dt ≤ 220A/µs, V

SD

AS

= 25A

DD

≤ V

(BR)DSS

 Calculated continuous current based on maximum allowable junction

temperature: Package limitation current = 20A

,

 Use IRFR/U1205 Data and Test conditons.

TJ ≤ 175°C

2 www.irf.com

D

S

TO-220AB Package Outline

A

Dimensions are shown in millimeters (inches)

PROVISIONAL

IRF1205

10.54 (.415)

2.87 (.113)

2.62 (.103)

15.24 (.600)

14.84 (.584)

14.09 (.555)

13.47 (.530)

1.40 (.055)

3X

1.15 (.045)

2.54 (.100)

NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CO NTRO LLING DIM EN S IO N : IN C H 4 HEATSINK & LEAD M EA SURE ME NTS D O NOT INCLUDE BURRS.

10.29 (.405)

4

1 2 3

2X

3.78 (.149)

3.54 (.139)

- A -

6.47 (.255)

6.10 (.240)

1.15 (.045)
MIN

4.06 (.160)

3.55 (.140)

0.93 (.037)

3X

0.69 (.027)

0.3 6 (.014) M B A M

TO-220AB Part Marking Information

EXAMPLE : THIS IS AN IRF1010
W ITH A SSE MBLY
LOT CODE 9B 1 M

INTERN A TION A L
RE CTIFIER
L OGO

ASSEMBLY
LOT COD E

4.69 (.185)

4.20 (.165)

- B -

1.32 (.052)

1.22 (.048)

2.92 (.115)

2.64 (.104)

I RF1010

9246

9B 1M

LEAD AS SIGNM ENTS
1 - G ATE
2 - D RA IN
3 - S OU RC E
4 - D RA IN

0.55 (.022)

3X

0.46 (.018)

PART NUMB ER

DATE CODE
(YYWW)
YY = YE AR
WW = WEEK

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: [phone]

IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: [phone]

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: [phone]

IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630

IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: [phone]

Data and specifications subject to change without notice. 11/99

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