Datasheet IRF730 Datasheet (Philips)

Philips Semiconductors Product specification

PowerMOS transistor IRF730
Avalanche energy rated

FEATURES SYMBOL QUICK REFERENCE DATA

• Repetitive Avalanche Rated

• Fast switching V

d

= 400 V

DSS

• High thermal cycling performance

• Low thermal resistance I

g

s

= 7.2 A

D

R

DS(ON)

≤ 1 Ω

GENERAL DESCRIPTION PINNING SOT78 (TO220AB)

N-channel, enhancement mode PIN DESCRIPTION
field-effect power transistor,
intendedforuse in off-line switched 1 gate
mode power supplies, T.V. and
computer monitor power supplies, 2 drain
d.c.tod.c.converters,motorcontrol
circuits and general purpose 3 source
switching applications.

tab drain
The IRF730 is supplied in the
SOT78 (TO220AB) conventional
leaded package.

tab

123

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DSS

V

DGR

V

GS

I

D

I

DM

P

D

Tj, T

Drain-source voltage Tj = 25 ˚C to 150˚C - 400 V
Drain-gate voltage Tj = 25 ˚C to 150˚C; RGS = 20 kΩ - 400 V
Gate-source voltage - ± 30 V
Continuous drain current Tmb = 25 ˚C; VGS = 10 V - 7.2 A

Tmb = 100 ˚C; VGS = 10 V - 4.6 A
Pulsed drain current Tmb = 25 ˚C - 29 A
Total dissipation Tmb = 25 ˚C - 125 W
Operating junction and - 55 150 ˚C

stg

storage temperature range

AVALANCHE ENERGY LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

E

AS

E

AR

IAS, I

1 pulse width and repetition rate limited by Tj max.

March 1999 1 Rev 1.000

Non-repetitive avalanche Unclamped inductive load, IAS = 4.8 A; - 290 mJ
energy tp = 0.23 ms; Tj prior to avalanche = 25˚C;

VDD ≤ 50 V; RGS = 50 Ω; VGS = 10 V; refer

to fig:17
Repetitive avalanche energy1IAR = 7.2 A; tp = 2.5 µs; Tj prior to - 9.4 mJ

avalanche = 25˚C; RGS = 50 Ω; VGS = 10 V;

refer to fig:18
Repetitive and non-repetitive - 7.2 A

AR

avalanche current

Philips Semiconductors Product specification

PowerMOS transistor IRF730
Avalanche energy rated

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R

th j-mb

R

th j-a

ELECTRICAL CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

∆V

(BR)DSS

∆T

j

R

DS(ON)

V

GS(TO)

g

fs

I

DSS

I

GSS

Q

g(tot)

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

d

L

d

L

s

C

iss

C

oss

C

rss

Thermal resistance junction - - 1 K/W
to mounting base
Thermal resistance junction in free air - 60 - K/W
to ambient

Drain-source breakdown VGS = 0 V; ID = 0.25 mA 400 - - V
voltage

/ Drain-source breakdown VDS = VGS; ID = 0.25 mA - 0.1 - %/K

voltage temperature
coefficient
Drain-source on resistance VGS = 10 V; ID = 3.6 A - 0.7 1 Ω
Gate threshold voltage VDS = VGS; ID = 0.25 mA 2.0 3.0 4.0 V
Forward transconductance VDS = 30 V; ID = 3.6 A 2 4 - S
Drain-source leakage current VDS = 400 V; VGS = 0 V - 1 25 µA

VDS = 320 V; VGS = 0 V; Tj = 125 ˚C - 30 250 µA
Gate-source leakage current VGS = ±30 V; VDS = 0 V - 10 200 nA

Total gate charge ID = 7.2 A; V
Gate-source charge - 3 5 nC

= 320 V; VGS = 10 V - 52 62 nC

DD

Gate-drain (Miller) charge - 26 30 nC
Turn-on delay time VDD = 200 V; RD = 27 Ω; - 12 - ns

Turn-on rise time RG = 12 Ω -33-ns
Turn-off delay time - 93 - ns
Turn-off fall time - 42 - ns

Internal drain inductance Measured from tab to centre of die - 3.5 - nH
Internal drain inductance Measured from drain lead to centre of die - 4.5 - nH
Internal source inductance Measured from source lead to source - 7.5 - nH

bond pad
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 620 - pF

Output capacitance - 108 - pF
Feedback capacitance - 63 - pF

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

S

I

SM

V

SD

t

rr

Q

rr

March 1999 2 Rev 1.000

Continuous source current Tmb = 25˚C - - 7.2 A
(body diode)
Pulsed source current (body Tmb = 25˚C - - 29 A
diode)
Diode forward voltage IS = 7.2 A; VGS = 0 V - - 1.2 V

Reverse recovery time IS = 7.2 A; VGS = 0 V; dI/dt = 100 A/µs - 270 - ns
Reverse recovery charge - 3.3 - µC

Philips Semiconductors Product specification

PowerMOS transistor IRF730
Avalanche energy rated

PD%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140

Normalised Power Derating

Tmb / C

Fig.1. Normalised power dissipation.

PD% = 100⋅PD/P

ID%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140

Tmb / C

= f(Tmb)

D 25 ˚C

Normalised Current Derating

Fig.2. Normalised continuous drain current.

ID% = 100⋅ID/I

= f(Tmb); conditions: VGS ≥ 10 V

D 25 ˚C

Zth j-mb, Transient thermal impedance (K/W)

1

D = 0.5

0.2

0.1

0.1

0.05

0.02

0.01
single pulse

0.001
1us

10us 100us

1ms 1s

tp, pulse width (s)

P

D

10ms 100ms

PHP3N60

t

D =

p

T

t

t

p

T

Fig.4. Transient thermal impedance.

Z

= f(t); parameter D = tp/T

th j-mb

ID, Drain current (Amps)

20

Tj = 25 C

15

10

5

0

0 5 10 15 20 25 30

VDS, Drain-Source voltage (Volts)

PHP5N40
10 V

VGS = 4.5 V

Fig.5. Typical output characteristics

ID = f(VDS); parameter V

GS

7 V

6.5 V

6 V

5.5 V
5 V

.

7 V

GS

PHP5N40

10 V

.

ID, Drain current (Amps)

100

10

RDS(ON) = VDS/ID

1

DC

0.1
10 100 1000 10000

VDS, Drain-source voltage (Volts)

tp = 10 us

100 us

1 ms

10 ms

PHP3N50

Fig.3. Safe operating area. Tmb = 25 ˚C

ID & IDM = f(VDS); IDM single pulse; parameter t

RDS(on), Drain-Source on resistance (Ohms)

2.5

4.5 V

2

1.5

1

0.5

0

0 5 10 15 20

5.5 V

5 V

ID, Drain current (Amps)

VGS = 6 V Tj = 25 C

6.5 V

Fig.6. Typical on-state resistance

R

p

= f(ID); parameter V

DS(ON)

March 1999 3 Rev 1.000

Philips Semiconductors Product specification

PowerMOS transistor IRF730
Avalanche energy rated

ID, Drain current (Amps)

20

VDS > ID x RDS(on)max

15

10

5

0

0246810

VGS, Gate-Source voltage (Volts)

Tj = 25 C

PHP5N40

Tj = 150 C

Fig.7. Typical transfer characteristics.

ID = f(VGS); parameter T

gfs, Transconductance (S)

7

VDS > ID x RDS(on)max

6

5

4

3

Tj = 25 C

150 C

j

PHP5N40

VGS(TO) / V

4

3

2

1

0

-60 -40 -20 0 20 40 60 80 100 120 140

max.

typ.

min.

Tj / C

Fig.10. Gate threshold voltage

V

= f(Tj); conditions: ID = 0.25 mA; VDS = V

GS(TO)

1E-01

1E-02

1E-03

1E-04

ID / A

SUB-THRESHOLD CONDUCTION

2 %

typ

.

GS

98 %

2

1

0

0 5 10 15 20

Fig.8. Typical transconductance

a

2

1

0

-60 -40 -20 0 20 40 60 80 100 120 140

ID, Drain current (A)

gfs = f(ID); parameter T

Normalised RDS(ON) = f(Tj)

Tj / C

.

j

Fig.9. Normalised drain-source on-state resistance.

a = R

DS(ON)/RDS(ON)25 ˚C

= f(Tj); ID = 3.6 A; VGS = 10 V

1E-05

1E-06

0 1 2 3 4

VGS / V

Fig.11. Sub-threshold drain current.

ID = f(V

Junction capacitances (pF)

1000

100

10

1 10 100 1000

Fig.12. Typical capacitances, C

C = f(VDS); conditions: VGS = 0 V; f = 1 MHz

; conditions: Tj = 25 ˚C; VDS = V

GS)

Ciss

Coss

Crss

VDS, Drain-Source voltage (Volts)

, C

iss

PHP5N40

oss

, C

GS

rss

.

March 1999 4 Rev 1.000

Philips Semiconductors Product specification

PowerMOS transistor IRF730
Avalanche energy rated

VGS, Gate-Source voltage (Volts)

15

ID = 7.2 A

Tj = 25 C

10

5

0

0 1020304050607080

Qg, Gate charge (nC)

240 V

80 V

PHP5N40

VDD = 320 V

Fig.13. Typical turn-on gate-charge characteristics.

V

= f(QG); parameter V

GS

Switching times (ns)

1000

VDD = 200 V

VGS = 10 V
RD = 27 Ohms
Tj = 25 C

100

td(off)

tf
tr

td(on)

10

0 102030405060

RG, Gate resistance (Ohms)

Fig.14. Typical switching times; t

d(on)

DS

, tr, t

PHP5N40

, tf = f(RG)

d(off)

IF, Source-Drain diode current (Amps)

20

VGS = 0 V

15

10

150 C

5

0

0 0.2 0.4 0.6 0.8 1 1.2 1.4

VSDS, Source-Drain voltage (Volts)

Tj = 25 C

PHP5N40

Fig.16. Source-Drain diode characteristic.

IF = f(V

Non-repetitive Avalanche current, IAS (A)

10

Tj prior to avalanche = 125 C

1

VDS

tp

ID

0.1
1E-06 1E-05 1E-04 1E-03 1E-02

); parameter T

SDS

Avalanche time, tp (s)

j

25 C

PHP7N40E

Fig.17. Maximum permissible non-repetitive

avalanche current (IAS) versus avalanche time (tp);

unclamped inductive load

Normalised Drain-source breakdown voltage

1.15

V(BR)DSS @ Tj
V(BR)DSS @ 25 C

1.1

1.05

1

0.95

0.9

0.85

-100 -50 0 50 100 150
Tj, Junction temperature (C)

Fig.15. Normalised drain-source breakdown voltage

V

(BR)DSS/V(BR)DSS 25 ˚C

= f(Tj)

;

Maximum Repetitive Avalanche Current, IAR (A)

10

Tj prior to avalanche = 25 C

1

0.1

0.01
1E-06 1E-05 1E-04 1E-03 1E-02

125 C

PHP7N40E

Avalanche time, tp (s)

Fig.18. Maximum permissible repetitive avalanche

current (IAR) versus avalanche time (tp)

March 1999 5 Rev 1.000

Philips Semiconductors Product specification

PowerMOS transistor IRF730
Avalanche energy rated

MECHANICAL DATA

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220 SOT78

AE

P

A

1

D

1

D

(1)

L

2

b

1

L

DIMENSIONS (mm are the original dimensions)

b

A

UNIT

mm

Note

1. Terminals in this zone are not tinned.

OUTLINE

VERSION

SOT78 TO-220

A

1

4.5

1.39

4.1

1.27

b

c

1

0.9

0.7

IEC JEDEC EIAJ

0.7

1.3

0.4

1.0

123

e

e

0 5 10 mm

D

D

1

15.8

6.4

15.2

5.9

REFERENCES

q

L

1

Q

L

2

max.

3.0

(1)

c

P

qQ

3.8

3.0

3.6

2.7

EUROPEAN

PROJECTION

2.6

2.2

ISSUE DATE

97-06-11

b

scale

e

10.3

9.7

E

2.54

15.0

13.5

L

L

1

3.30

2.79

Fig.19. SOT78 (TO220AB); pin 2 connected to mounting base (Net mass:2g)

Notes

1. This product is supplied in anti-static packaging. The gate-source input must be protected against static
discharge during transport or handling.

2. Refer to mounting instructions for SOT78 (TO220AB) package.

3. Epoxy meets UL94 V0 at 1/8".

March 1999 6 Rev 1.000

Philips Semiconductors Product specification

PowerMOS transistor IRF730
Avalanche energy rated

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 1999

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

March 1999 7 Rev 1.000