International Rrectifier IRS2127 User Manual

Data Sheet No. PD60299

IRS212(7, 71, 8, 81)(S)PbF

CURRENT SENSING SINGLE CHANNEL DRIVER

Features

Product Summary

• Floating channel designed for bootstrap operation

Fully operational to +600 V Tolerant to negative transient voltage dV/dt immune

• Application-specific gate drive range:

Motor Drive: 12 V to 20 V (IRS2127/IRS2128) Automotive: 9 V to 20 V (IRS21271/IRS21281)

• Undervoltage lockout

• 3.3 V, 5 V, and 15 V input logic compatible

IO+/- 200 mA / 420 mA

V

OFFSET

12 V - 20V 9 V - 20 V

OUT

600 V max.

(IRS2127/IR2128) (IRS21271/IR21281)

• FAULT lead indicates shutdown has occured

• Output in phase with input (IRS2127/IRS21271)

V

CSth

250 mV or 1.8 V

• Output out of phase with input (IRS2128/IRS21281)

• RoHS compliant

t

on/off

(typ.) 150 ns & 150 ns

Description

The IRS2127/IRS2128/IRS21271/IRS21281 are high voltage, high speed power MOSFET and IGBT drivers. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL outputs, down to 3.3 V. The protection circuity detects over-current in the driven power transistor and terminates the gate drive voltage. An open drain

FAULT

signal is provided to indicate that an over-current shutdown has occurred. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side or low-side configuration which operates up to 600 V.

Packages

8-Lead PDIP 8-Lead SOIC

Typical Connection

V

CC

IN

FAULT

(Refer to Lead Assignments for correct pin configuration). These diagrams show electrical connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout.

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V

CC

IN FAULT COM

HO

V

B

CS

V

S

IRS2127/IRS21271

FAULT

V

CC

IN

V

CC

IN FAULT COM

HO

V

B

CS

V

S

IRS2128/IRS21281

IRS212(7, 71, 8, 81)(S)PbF

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Symbol Definition Min. Max. Units

V

B

V

S

V

HO

V

CC

V

IN

V

FLT

V

CS

dVs/dt Allowable offset supply voltage transient — 50 V/ns

P

D

Rth

JA

T

J

T

S

T

L

High-side floating supply voltage -0.3 625 High-side floating offset voltage VB - 25 VB + 0.3 High-side floating output voltage VS - 0.3 V

+ 0.3

B

Logic supply voltage -0.3 25 V Logic input voltage -0.3 V

FAULT output voltage -0.3 V

Current sense voltage VS - 0.3 V

Package power dissipation @ TA ≤ +25 °C

Thermal resistance, junction to ambient

8-Lead DIP — 1.0 8-Lead SOIC — 0.625 8-Lead DIP — 125 8-Lead SOIC — 200

CC CC

B

+ 0.3 + 0.3

+ 0.3

W

°C/W

Junction temperature — 150 Storage temperature -55 150

°C

Lead temperature (soldering, 10 seconds) — 300

Recommended Operating Conditions

The input/output logic timing diagram is shown in Fig. 1. For proper operation the device should be used within the recommended conditions. The VS offset rating is tested with all supplies biased at 15 V differential.

Symbol Definition Min. Max. Units

V

B

V

S

V

HO

V

CC

V

IN

V

FLT

V

CS

T

A

High-side floating supply voltage

(IRS21271/IRS21281) VS + 9 VS + 20 High-side floating offset voltage Note 1 600 High-side floating output voltage V Logic supply voltage 10 20 Logic input voltage 0 V

FAULT output voltage 0 V

Current sense signal voltage V Ambient temperature -40 125 °C

Note 1: Logic operational for VS of -5 V to +600 V. Logic state held for VS of -5 V to -VBS. (Please refer to the Design Tip DT97-3 for more details).

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(IRS2127/IRS2128) VS + 12 VS + 20

S

V

B

CC CC

V

+ 5

S

V

IRS212(7, 71, 8, 81)(S)PbF

Dynamic Electrical Characteristics

V

(VCC, VBS) = 15 V, CL = 1000 pF and TA = 25 °C unless otherwise specified. The dynamic electrical characteristics

BIAS

are measured using the test circuit shown in Fig. 3.

Symbol Definition Min. Typ.Max.Units Test Conditions

t

on

t

off

t t

t

bl

t

cs

t

flt

Turn-on propagation delay — 150 200 V Turn-off propagation delay — 150 200 V Turn-on rise time — 80 130

r

Turn-off fall time — 40 65 ns

f

Start-up blanking time 550 750 950 CS shutdown propagation delay — 65 360 CS to FAULT pull-up propagation delay — 270 510

= 0 V

S

= 600 V

S

Static Electrical Characteristics

V

BIAS (VCC

COM. The VO and IO parameters are referenced to VS.

Symbol Definition Min. Typ.Max.Units Test Conditions

V

R

, VBS) = 15 V and TA = 25 °C unless otherwise specified. The VIN, V

V

CSTH+

V

OH

V

OL

I

LK

I

QBS

I

QCC

I

IN+

I

IN-

I

CS+

I

CS-

BSUV+

BSUV-

I

O+

I

O-

on,FLT

Logic “1” input voltage (IRS2127/IRS21271)

IH

Logic “0” input voltage (IRS2128/IRS21281) Logic “0” input voltage (IRS2127/IRS21271)

IL

Logic “1” input voltage (IRS2128/IRS21281) CS input positive (IRS2127/IRS2128) 180 250 320 mV going threshold High level output voltage, V Low level output voltage, V

(IRS21271/IRS21281)

- V

BIAS

O

Offset supply leakage current — — 50 VB = VS = 600 V Quiescent V

supply current — 300 800

BS

Quiescent VCC supply current — 60 120 Logic “1” input bias current — 7.0 15 Logic “0” input bias current — — 5.0 V “High” CS bias current — — 5.0 V “High” CS bias current — — 5.0 V V

supply undervoltage (IRS2127/IRS2128) 8.8 10.3 11.8

BS

positive going threshold (IRS21271/IRS21281) 6.3 7.2 8.2 V

supply undervoltage

BS

negative going

threshold

(IRS2127/IRS2128) (IRS21271/IRS21281) 6.0 6.8 7.7

Output high short circuit pulsed current 200 290 —

Output low short circuit pulsed current 420 600 —

FAULT - low on resistance — 125 — Ω

2.5

1.5 1.8 2.1 — 0.05 0.2 — 0.02 0.1

7.5 9.0 10.6

TH,

—

— — 0.8

and IIN parameters are referenced to

—

V

VCC = 10 V to 20 V

V

IO = 2 mA

VIN = 0 V or 5 V

µA

VIN = 5 V

= 0 V

IN

= 3 V

CS

= 0 V

CS

V

VO = 0 V, V

mA

VO = 15 V, V

IN

PW ≤ 10 µs

IN

PW ≤ 10 µs

= 5 V

= 0 V

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Functional Block Diagram IRS2127/IRS21271

IRS212(7, 71, 8, 81)(S)PbF

V

CC

HV

UP SHIFTERS

LEVEL SHIFT

UV

DETECT

PULSE

FILTER

IN

FAULT

Q R

PULSE

GEN

PULSE

FILTER

DOWN SHIFTER

V

B

S

COM

Functional Block Diagram IRS2128/IRS21281

V

FAULT

COM

CC

5V

UP SHIFTERS

HV LEVEL SHIFT

IN

PULSE

GEN

PULSE

Q

R

FILTER

S

DETECT

PULSE

FILTER

DOWN SHIFTER

UV

V

B

R Q R

S

PULSE

GEN

R Q R

S

PULSE

GEN

Q R

Q

V

B

BUFFER

HO

V

S

DELAY

S

-

+

BUFFER

V

HO

V

CS

B

S

DELAY

R

S

-

CS

+

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Lead Definitions

Symbol Description

V

CC

IN

FAULT

Logic and gate drive supply Logic input for gate driver output (HO), in phase with HO (IRS2127/IRS21271) out of phase with HO (IRS2128/IRS21281)

Indicates over-current shutdown has occurred, negative logic COM Logic ground V HO V CS

High-side floating supply

B

High-side gate drive output

High-side floating supply return

S

Current sense input to current sense comparator

Lead Assignments

IRS212(7, 71, 8, 81)(S)PbF

1

V

CC

2

I N

3

FAULT

4

COM

V

HO

C V

1

8

B

7 6

S

5

S

V

CC

2

I N

3

FAULT

4

COM

HO

V

8

B

7

C

6

S

V

5

S

8 Lead PDIP 8 Lead SOIC

IRS2127/IRS21271 IRS2127S/IRS21271S

1

V

CC

2

I N

3

FAULT

4

COM

V

HO

C V

8

B

7 6

S

5

S

1 2 3 4

8 Lead PDIP 8 Lead SOIC

V

CC

I N FAULT COM

V

HO

C V

8

B

7 6

S

5

S

IRS2128/IRS21281 IRS2128S/IRS21281S

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IRS212(7, 71, 8, 81)(S)PbF

IN (IRS2128/ IRS21281)

IN

(IRS2127/ IRS21271)

CS

FAULT

HO

Figure 1. Input/Output Timing Diagram

IN (IRS2128/ IRS21281)

IN

(IRS2127/ IRS21271)

CS

HO

50%

t

bl

IN

(IRS2128/

50% 50%

IRS21281)

50%

IN

(IRS2127/ IRS21271)

HO

t

r

on

10% 10%

Figure 2. Switching Time Waveform Definition

90%

50%

t

off

90% 90%

t

f

FAULT

Figure 3. Start-Up Blanking Time Waveform

Definitions

V

CSTH

CS

t

cs

HO

90%

Figure 4. CS Shutdown Waveform Definitions

CS

FAULT

Figure 5. CS to

V

CSTH

t

flt

90%

Waveform Definitions

FAULT

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IRS212(7, 71, 8, 81)(S)PbF

Turn-Off Delay Ti me (ns)

T ur n- On D elay T ime ( ns )

Turn-Off Delay Ti me (ns)

Temperature

300 250 200 150 100

50

300 250 200 150 100

Max Typ

0

-50 -25 0 25 50 75 100 125 Temperature (°C)

Figure 6A. Turn-On Delay Time vs.

Max Typ

50

300 250

Max

200

Typ

150 100

50

0

10 12 14 16 18 20

Supply Voltage (V)

Figure 6B. Turn-On Delay Time vs. Voltage

250

Max

200

Typ

150

100

50

0

-50 -25 0 25 50 75 100 125 Temperature (°C)

Figure 7A. Turn-Off Delay Time vs.

0

10 12 14 16 18 20

Supply Voltage (V)

Figure 7B. Turn-Off Delay Time vs. Voltage

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