International Rectifier ST780C06L0, ST780C04L3L, ST780C04L3, ST780C04L2L, ST780C04L2 Datasheet
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D-342
DISCRETE POWER DIODES and THYRISTORS
DATA BOOK
1350A
PHASE CONTROL THYRISTORS Hockey Puk Version
ST780C..L SERIES
D-343
Bulletin I25192/B
ST780C..L Series
2222222222222
12
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ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V
DRM/VRRM
, max. repetitive V
RSM
, maximum non- I
DRM/IRRM
max.
Type number Code peak and off-state voltage repetitive peak voltage
@ TJ = TJ max
V V mA
04 400 500
06 600 700
I
T(AV)
Max. average on-state current 1350 (500) A 180° conduction, half sine wave
@ Heatsink temperature 55 (85) °C double side (single side) cooled
I
T(RMS)
Max. RMS on-state current 2700 DC @ 25°C heatsink temperature double side cooled
I
TSM
Max. peak, one-cycle 24400 t = 10ms No voltage
non-repetitive surge current 25600 A t = 8.3ms reapplied
20550 t = 10ms 100% V
RRM
21500 t = 8.3ms reapplied Sinusoidal half wave,
I
2
t Maximum I2t for fusing 2986 t = 10ms No voltage Initial TJ = TJ max.
2726 t = 8.3ms reapplied
2112 t = 10ms 100% V
RRM
1928 t = 8.3ms reapplied
I
2
√t Maximum I2√t for fusing 29860 KA2√s t = 0.1 to 10ms, no voltage reapplied
V
T(TO)
1
Low level value of threshold
voltage
V
T(TO)
2
High level value of threshold
voltage
r
t1
Low level value of on-state
slope resistance
r
t2
High level value of on-state
slope resistance
V
TM
Max. on-state voltage 1.31 V Ipk= 3600A, TJ = TJ max, tp = 10ms sine pulse
I
H
Maximum holding current 600
I
L
Typical latching current 1000
0.80 (16.7% x π x I
T(AV)
< I < π x I
T(AV)
), TJ = TJ max.
0.14 (16.7% x π x I
T(AV)
< I < π x I
T(AV)
), TJ = TJ max.
0.13 (I > π x I
T(AV)
),TJ = TJ max.
Parameter ST780C..L Units Conditions
0.90 (I > π x I
T(AV)
),TJ = TJ max.
On-state Conduction
KA2s
V
mΩ
mA
T
J
= 25°C, anode supply 12V resistive load
di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω, t
r
≤ 1µs
of turned-on current T
J
= TJ max, anode voltage ≤ 80% V
DRM
Gate current 1A, dig/dt = 1A/µs
V
d
= 0.67% V
DRM, TJ
= 25°C
I
TM
= 750A, TJ = TJ max, di/dt = 60A/µs, VR = 50V
dv/dt
= 20V/µs, Gate 0V 100Ω, tp = 500µs
Parameter ST780C..L Units Conditions
Switching
1000 A/µs
t
d
Typical delay time 1.0
t
q
Typical turn-off time 150
µs
ST780C..L 80
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