International Rectifier ST730C16L3L, ST730C16L3, ST730C16L2L, ST730C16L1L, ST730C16L1 Datasheet
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D-334
Bulletin I25191/B
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ST730C..L SERIES
PHASE CONTROL THYRISTORS Hockey Puk Version
Features
Center amplifying gate
Metal case with ceramic insulator
International standard case TO-200AC (B-PUK)
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
Major Ratings and Characteristics
Parameters ST730C..L Units
I
T(AV)
@ T
hs
I
T(RMS)
@ T
hs
I
TSM
2
I
t @ 50Hz 1591 KA2s
@ 50Hz 17800 A
@ 60Hz 18700 A
@ 60Hz 1452 KA
990 A
55 °C
2000 A
25 °C
990A
case style TO-200AC (B-PUK)
2
s
V
DRM/VRRM
t
q
T
J
800 to 1800 V
typical 150 µs
- 40 to 125 °C
D-335
ST730C..L Series
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ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V
DRM/VRRM
Type number Code peak and off-state voltage repetitive peak voltage
08 800 900
12 1200 1300
ST730C..L 14 1400 1500 80
16 1600 1700
18 1800 1900
On-state Conduction
Parameter ST730C..L Units Conditions
I
Max. average on-state current 990 (375) A 180° conduction, half sine wave
T(AV)
@ Heatsink temperature 55 (85) °C double side (single side) cooled
I
Max. RMS on-state current 2000 DC @ 25°C heatsink temperature double side cooled
T(RMS)
I
Max. peak, one-cycle 17800 t = 10ms No voltage
TSM
non-repetitive surge current 18700 A t = 8.3ms reapplied
2
I
t Maximum I2t for fusing 1591 t = 10ms No voltage Initial TJ = TJ max.
2
I
√t Maximum I2√t for fusing 15910 KA2√s t = 0.1 to 10ms, no voltage reapplied
V
Low level value of threshold
T(TO)
1
voltage
V
High level value of threshold
T(TO)
2
voltage
r
Low level value of on-state
t1
slope resistance
r
High level value of on-state
t2
slope resistance
V
Max. on-state voltage 1.62 V Ipk= 2000A, TJ = TJ max, tp = 10ms sine pulse
TM
I
Maximum holding current 600
H
I
Typical latching current 1000
L
, max. repetitive V
, maximum non- I
RSM
DRM/IRRM
@ TJ = TJ max
V V mA
15000 t = 10ms 100% V
15700 t = 8.3ms reapplied Sinusoidal half wave,
1452 t = 8.3ms reapplied
1125 t = 10ms 100% V
KA2s
1027 t = 8.3ms reapplied
0.98 (16.7% x π x I
V
1.12 (I > π x I
T(AV)
0.32 (16.7% x π x I
mΩ
0.27 (I > π x I
mA
T(AV)
T
= 25°C, anode supply 12V resistive load
J
RRM
RRM
< I < π x I
T(AV)
),TJ = TJ max.
< I < π x I
T(AV)
),TJ = TJ max.
), TJ = TJ max.
T(AV)
), TJ = TJ max.
T(AV)
2222222222222
max.
12
Switching
di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω, tr ≤ 1µs
t
d
t
q
Parameter ST730C..L Units Conditions
of turned-on current T
1000 A/µs
Typical delay time 1.0
Typical turn-off time 150
= TJ max, anode voltage ≤ 80% V
J
Gate current 1A, dig/dt = 1A/µs
= 0.67% V
V
d
µs
= 750A, TJ = TJ max, di/dt = 60A/µs, VR = 50V
I
TM
= 20V/µs, Gate 0V 100Ω, tp = 500µs
dv/dt
D-336
DRM, TJ
DRM
= 25°C
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