International Rectifier ST1200C20K3L, ST1200C20K3, ST1200C18K1, ST1200C18K0L, ST1200C18K0 Datasheet
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Bulletin I25196/A
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ST1200C..K SERIES
PHASE CONTROL THYRISTORS Hockey Puk V ersion
1650A
Features
Center amplifying gate
Metal case with ceramic insulator
International standard case A-24 (K-PUK)
High profile hockey-puk
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
Major Ratings and Characteristics
Parameters ST1200C..K Units
I
T(AV)
I
T(RMS)
I
TSM
@ T
hs
@ T
hs
@ 50Hz 30500 A
@ 60Hz 32000 A
1650 A
55 °C
3080 A
25 °C
case style A-24 (K-PUK)
I2t@
V
DRM/VRRM
t
q
T
J
50Hz 4651 KA2s
@ 60Hz 4250 KA2s
typical 200 µs
1200 to 2000 V
- 40 to 125 °C
ST1200C..K Series
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ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V
DRM/VRRM
Type number Code peak and off-state voltage repetitive peak voltage @ T
12 1200 1300
14 1400 1500
ST1200C..K 100
16 1600 1700
18 1800 1900
20 2000 2100
On-state Conduction
Parameter ST1200C..K Units Conditions
, max. repetitive V
, maximum non- I
RSM
DRM/IRRM
VVmA
max.
= TJ max
J
I
T(AV)
Max. average on-state current 1650 (700) A 180° conduction, half sine wave
@ Heatsink temperature 55 (85) °C double side (single side) cooled
I
T(RMS)
I
TSM
Max. RMS on-state current 3080 DC @ 25°C heatsink temperature double side cooled
Max. peak, one-cycle 30500 t = 10ms No voltage
non-repetitive surge current 32000 A t = 8.3ms reapplied
25700 t = 10ms 100% V
RRM
26900 t = 8.3ms reapplied Sinusoidal half wave,
2
t Maximum I2t for fusing 4651 t = 10ms No voltage Initial TJ = TJ max.
I
4250 t = 8.3ms reapplied
3300 t = 10ms 100% V
KA2s
RRM
3000 t = 8.3ms reapplied
2
√t Maximum I2√t for fusing 46510 KA2√s t = 0.1 to 10ms, no voltage reapplied
I
V
V
r
t1
r
t2
V
I
H
I
L
Low level value of threshold
T(TO)
1
voltage
High level value of threshold
T(TO)
2
voltage
Low level value of on-state
slope resistance
High level value of on-state
slope resistance
Max. on-state voltage 1.73 V Ipk= 4000A, TJ = TJ max, tp = 10ms sine pulse
TM
0.91 (16.7% x π x I
V
1.01 (I > π x I
T(AV)
0.21 (16.7% x π x I
mΩ
0.19 (I > π x I
T(AV)
< I < π x I
T(AV)
),TJ = TJ max.
< I < π x I
T(AV)
),TJ = TJ max.
T(AV)
T(AV)
Maximum holding current 600
Typical latching current 1000
mA T
= 25°C , anode supply 12V resistive load
J
), TJ = TJ max.
), TJ = TJ max.
Switching
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Parameter ST1200C..K Units Conditions
ST1200C..K Series
di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω, tr ≤ 1µs
of turned-on current T
t
d
t
q
Typical delay time 1.9
Typical turn-off time 200
1000 A/µs
µs
= TJ max, anode voltage ≤ 80% V
J
Gate current 1A, dig/dt = 1A/µs
= 0.67% V
V
d
I
= 550A, TJ = TJ max, di/dt = 40A/µs, VR = 50V
TM
= 20V/µs, Gate 0V 100Ω, tp = 500µs
dv/dt
DRM, TJ
= 25°C
Blocking
Parameter ST1200C..K Units Conditions
dv/dt Maximum critical rate of rise of
RRM
DRM
Max. peak reverse and off-state
leakage current
I
I
500 V/µs TJ = TJ max. linear to 80% rated V
off-state voltage
100 mA TJ = TJ max, rated V
DRM/VRRM
Triggering
Parameter ST1200C..K Units Conditions
P
P
I
+V
-V
I
V
I
V
Maximum peak gate power 16 TJ = TJ max, tp ≤ 5ms
GM
Maximum average gate power 3 TJ = TJ max, f = 50Hz, d% = 50
G(AV)
Max. peak positive gate current 3.0 A TJ = TJ max, tp ≤ 5ms
GM
Maximum peak positive
GM
gate voltage
Maximum peak negative
GM
gate voltage
20
5.0
W
VT
= TJ max, tp ≤ 5ms
J
TYP. MAX.
DC gate current required
GT
to trigger
100 200
50 -
1.4 -
200 -
DC gate voltage required
GT
1.1 3.0
to trigger
0.9 -
DC gate current not to trigger 10 mA
GD
DC gate voltage not to trigger 0.25 V
GD
mA T
VTJ = 25°C
= - 40°C
T
J
= 25°C
J
TJ = 125°C
TJ = - 40°C
= 125°C
T
J
= TJ max
T
J
Max. required gate trigger/ current/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
anode-to-cathode applied
DRM
DRM
DRM
applied
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