International Rectifier ST083S12PFK2, ST083S12PFK1L, ST083S12PFK1, ST083S12PFK0, ST083S10PFK2L Datasheet

Features

All diffused design
Center amplifying gate
Guaranteed high dv/dt
Guaranteed high di/dt
High surge current capability
Low thermal impedance
High speed performance

Typical Applications

Inverters
Choppers
Induction heating
All types of force-commutated converters

I

T(AV)

85 A

@ T

C

85 °C

I

T(RMS)

135 A

I

TSM

@ 50Hz 2450 A
@ 60Hz 2560 A

I2t@

50Hz 30 KA2s

@ 60Hz 27 KA2s

V

DRM/VRRM

400 to 1200 V

t

q

range (*) 10 to 30 µs

T

J

- 40 to 125 °C

Parameters ST083S Units

Major Ratings and Characteristics

(*) tq = 10 to 20µs for 400 to 800V devices

t

q

= 15 to 30µs for 1000 to 1200V devices

case style

TO-209AC (TO-94)

ST083S SERIES

INVERTER GRADE THYRISTORS

Stud V ersion

85A

Bulletin I25185/B

ST083S Series

Voltage V

DRM/VRRM

, maximum V

RSM

, maximum I

DRM/IRRM

max.

Type number Code repetitive peak voltage non-repetitive peak voltage @ T

J

= TJ max.

VVmA

04 400 500
08 800 900
10 1000 1100
12 1200 1300

ELECTRICAL SPECIFICATIONS

Voltage Ratings

Frequency Units

50Hz 210 120 330 270 2540 1930
400Hz 200 120 350 210 1190 810

1000Hz 150 80 320 190 630 400 A
2500Hz 70 25 220 85 250 100
Recovery voltage Vr 50 50 50 50 50 50

Voltage before turn-on Vd V

DRM

V

DRM

V

DRM

Rise of on-state current di/dt 50 50 - - - - A/µs
Case temperature 60 85 60 85 60 85 °C

Equivalent values for RC circuit 22Ω / 0.15µF 22Ω / 0.15µF 22Ω / 0.15µF

I

TM

180oel

180

o

el

100µs

I

TM

I

TM

Current Carrying Capability

V

I

T(AV)

Max. average on-state current 85 A 180° conduction, half sine wave
@ Case temperature 85 °C

I

T(RMS)

Max. RMS on-state current 135 DC @ 77°C case temperature

I

TSM

Max. peak, one half cycle, 2450 t = 10ms No voltage
non-repetitive surge current 2560 A t = 8.3ms reapplied

2060 t = 10m s 100% V

RRM

2160 t = 8.3ms reapplied Sinusoidal half wave,

I

2

t Maximum I2t for fusing 30 t = 10ms No voltage Initial TJ = TJ max

27 t = 8.3ms reapplied
21 t = 10ms 100% V

RRM

19 t = 8.3ms reapplied

I

2

√t Maximum I2√t for fusing 300 KA2√s t = 0.1 to 10ms, no voltage reapplied

Parameter ST083S Units Conditions

On-state Conduction

KA2s

ST083S 30

ST083S Series

V

TM

Max. peak on-state voltage 2.15 ITM= 300A, TJ = TJ max, tp = 10ms sine wave pulse

V

T(TO)1

Low level value of threshold
voltage

V

T(TO)2

High level value of threshold
voltage

r

t

1

Low level value of forward
slope resistance

r

t

2

High level value of forward
slope resistance

I

H

Maximum holding current 600 TJ = 25°C, IT > 30A

I

L

Typical latching current 1000 TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A

Parameter ST083S Units Conditions

On-state Conduction

1.46 (16.7% x π x I

T(AV)

< I < π x I

T(AV)

), TJ = TJ max.

1.52 (I > π x I

T(AV)

), TJ = TJ max.

V

2.32 (16.7% x π x I

T(AV)

< I < π x I

T(AV)

), TJ = TJ max.

2.34 (I > π x I

T(AV)

), TJ = TJ max.

mΩ

mA

di/dt Max. non-repetitive rate of rise T

J

= TJ max, V

DRM

= rated V

DRM

of turned-on current I

TM

= 2 x di/dt

T

J

= 25°C, V

DM

= rated V

DRM, ITM

= 50A DC, tp= 1µs
Resistive load, Gate pulse: 10V, 5Ω source
T

J

= TJ max, I

TM

= 100A, commutating di/dt = 10A/µs

V

R

= 50V, tp = 200µs, dv/dt: see table in device code

Switching

Parameter ST083S Units Conditions

1000 A/µs

t

d

Typical delay time 0.80

µs

dv/dt Maximum critical rate of rise of T

J

= TJ max., linear to 80% V

DRM

, higher value

off-state voltage available on request

I

RRM

Max. peak reverse and off-state

I

DRM

leakage current

Parameter ST083S Units Conditions

Blocking

500 V/µs

30 mA TJ = TJ max, rated V

DRM/VRRM

applied

P

GM

Maximum peak gate power 40

P

G(AV)

Maximum average gate power 5

I

GM

Max. peak positive gate current 5 A TJ = TJ max, tp ≤ 5ms

+V

GM

Maximum peak positive
gate voltage

-V

GM

Maximum peak negative
gate voltage

I

GT

Max. DC gate current required
to trigger

V

GT

Max. DC gate voltage required
to trigger

I

GD

Max. DC gate current not to trigger 20 mA

V

GD

Max. DC gate voltage not to trigger 0.25 V

Triggering

Parameter ST083S Units Conditions

20

5

VTJ = TJ max, tp ≤ 5ms

200 mA

3V

T

J

= 25°C, VA = 12V, Ra = 6Ω

TJ = TJ max, rated V

DRM

applied

(*) t

q

= 10 to 20µs for 400 to 800V devices; tq = 15 to 30µs for 1000 to 1200V devices.

Min M a x

WT

J

= TJ max, f = 50Hz, d% = 50

t

q

Max. turn-off time (*) 10 3 0