M87C196KC/M87C196KD
PIN DESCRIPTIONS
Symbol Name and Function
V
CC
Main supply voltage (5V).
V
SS
Digital circuit ground (0V). There are three VSSpins, all of which must be connected.
V
REF
Reference voltage for the A/D converter (5V). V
REF
is also the supply voltage to the analog
portion of the A/D converter and the logic used to read Port 0. Must be connected for A/D
and Port 0 to function.
ANGND Reference ground for the A/D converter. Must be held at nominally the same potential as
V
SS
.
V
PP
Timing pin for the return from powerdown circuit. Connect this pin with a 1 mF capacitor to
V
SS
anda1MXresistor to VCC. If this function is not used VPPmay be tied to VCC. This pin
is the programming voltage on the EPROM device.
XTAL1 Input of the oscillator inverter and of the internal clock generator.
XTAL2 Output of the oscillator inverter.
CLKOUT Output of the internal clock generator. The frequency of CLKOUT is (/2 the oscillator
frequency.
RESET Reset input to the chip.
BUSWIDTH Input for buswidth selection. If CCR bit 1 is a one, this pin selects the bus width for the bus
cycle in progress. If BUSWIDTH is a 1, a 16-bit bus cycle occurs. If BUSWIDTH isa0an
8-bit cycle occurs. If CCR bit 1 is a 0, the bus is always an 8-bit bus.
NMI A positive transition causes a vector through 203EH.
INST Output high during an external memory read indicates the read is an instruction fetch. INST
is valid throughout the bus cycle. INST is activated only during external memory accesses
and output low for a data fetch.
EA Input for memory select (External Access). EA equal to a TTL-high causes memory
accesses to locations 2000H through 5FFFH to be directed to on-chip EPROM. EA equal to
a TTL-low causes accesses to those locations to be directed to off-chip memory.
ALE/ADV Address Latch Enable or Address Valid output, as selected by CCR. Both pin options
provide a signal to demultiplex the address from the address/data bus. When the pin is
ADV
, it goes inactive high at the end of the bus cycle. ALE/ADV is activated only during
external memory accesses.
RD Read signal output to external memory. RD is activated only during external memory reads.
WR/WRL Write and Write Low output to external memory, as selected by the CCR. WR will go low for
every external write, while WRL
will go low only for external writes where an even byte is
being written. WR
/WRL is activated only during external memory writes.
BHE/WRH Bus High Enable or Write High output to external memory, as selected by the CCR. BHE
e
0 selects the bank of memory that is connected to the high byte of the data bus. A0e0
selects the bank of memory that is connected to the low byte of the data bus. Thus
accesses to a 16-bit wide memory can be to the low byte only (A0
e
0, BHEe1), to the
high byte only (A0e1, BHEe0), or both bytes (A0e0, BHEe0). If the WRH function is
selected, the pin will go low if the bus cycle is writing to an odd memory location. BHE
/WRH
is valid only during 16-bit external memory write cycles.
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