INTEGRAL IW4027BN Datasheet

Dual JK Flip-Flop
High-Voltage Silicon-Gate CMOS
The IW4027B is a Dual JK Flip-Flop which is edge-triggered and features independent Set, Reset, and Clock inputs. Data is accepted when the Clock is LOW and transferred to the output on the positive­going edge of the Clock. The active HIGH asynchronous Reset and Set are independent and override the J, K, or Clock inputs. The outputs are buffered for best system performance.
Operating Voltage Range: 3.0 to 18 V
Maximum input current of 1 µA at 18 V over full package-
temperature range; 100 nA at 18 V and 25°C
Noise margin (over full package temperature range):
1.0 V min @ 5.0 V supply
2.0 V min @ 10.0 V supply
2.5 V min @ 15.0 V supply
TECHNICAL DATA
IW4027B
ORDERING INFORMATION
IW4027BN Plastic
IW4027BD SOIC
TA = -55° to 125° C for all packages
LOGIC DIAGRAM
PIN 16 =V
PIN 8 = GND
CC
PIN ASSIGNMENT
FUNCTION TABLE
Inputs Outputs
Set Reset Clock J K Q
LHXXXLH HLXXXHL HHXXXHH L L L L No change LL HLHL LL LHLH L L H H Qn Qn
n+1Qn+1
X = don’t care Qn+1 = State After Clock Positive Transition
19
IW4027B
MAXIMUM RATINGS
*
Symbol Parameter Value Unit
V
CC
V
V
OUT
I
IN
P
P
DC Supply Voltage (Referenced to GND) -0.5 to +20 V DC Input Voltage (Referenced to GND) -0.5 to VCC +0.5 V
IN
DC Output Voltage (Referenced to GND) -0.5 to VCC +0.5 V DC Input Current, per Pin Power Dissipation in Still Air, Plastic DIP+
D
SOIC Package+ Power Dissipation per Output Transistor 100 mW
D
±
10
750 500
Tstg Storage Temperature -65 to +150
T
Lead Temperature, 1 mm from Case for 10 Seconds
L
260
(Plastic DIP or SOIC Package)
*
Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions. +Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C
SOIC Package: : - 7 mW/°C from 65° to 125°C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
VIN, V
T
CC
A
DC Supply Voltage (Referenced to GND) 3.0 18 V DC Input Voltage, Output Voltage (Referenced to GND) 0 V
OUT
Operating Temperature, All Package Types -55 +125
CC
mA
mW
°
C
°
C
V
°
C
This device c ontains p rote ction ci rcuitr y to guard a gainst damage d ue to high st atic voltages or electr ic fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance circuit. For proper operation, V GND≤(V
IN
or V
OUT
)≤VCC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V
and V
IN
should be constrained to the range
OUT
CC
Unused outputs must be left open.
20
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